2.5GHz低相位噪声CMOS LC VCO的设计

用0.35μm、一层多晶、四层金属、3.3V的标准全数字CMOS工艺设计了一个全集成的2.5GHz LC VCO,电路采用全差分互补负跨导结构以降低电路功耗和减少器件1/f噪声的影响.为了减少高频噪声的影响,采用了在片LC滤波技术.可变电容采用增强型MOS可变电容,取得了23%的频率调节范围.采用单个16边形的对称片上螺旋电感,并在电感下加接地屏蔽层,从而减少芯片面积,优化Q值.取得了在离中心频率1MHz处-118dBc/Hz的相位噪声性能.电源电压为3.3V时的功耗为4mA.     

1V 2.5GHz压控振荡器设计

设计了 1V ,2 .5 GHz的全集成压控振荡器 .通过优化集成电感的设计 ,同时采用 NMOS管和开关电容阵列作为可变电容 ,使该设计具有较低的相位噪声和较宽的调谐范围 .采用 0 .18μm CMOS工艺进行仿真 ,结果显示 ,在1V电源电压下 ,在偏离中心频率 6 0 0 k Hz处的相位噪声为 - 119d Bc/ Hz,调谐范围为 2 8% ,功耗为 3.6 m W.     

基于CMOS工艺宽带LC压控振荡器研究

设计了一种应用于无线通信系统的宽带电感电容(LC)压控振荡器(VCO),电路采用开关电容阵列获得了宽频率覆盖范围;利用开关可变电容阵列减小了调谐增益变化;并通过采用高品质因数的差分电感和噪声滤波技术获得了低相位噪声.电路设计采用SMIC 0.18 μm CMOS工艺.仿真结果表明:在工作电压为1.8 V时,直流功耗为9 mW,压控振荡器的频率范围870～1500 MHz(53%),调谐增益在67 MHz/V至72 MHz/V之间.相位噪声优于-100 dBc/Hz@100 kHz.     

1V 2.5GHz压控振荡器设计

设计了1V,2.5GHz的全集成压控振荡器.通过优化集成电感的设计,同时采用NMOS管和开关电容阵列作为可变电容,使该设计具有较低的相位噪声和较宽的调谐范围.采用0.18μm CMOS工艺进行仿真,结果显示,在1V电源电压下,在偏离中心频率600kHz处的相位噪声为-119dBc/Hz,调谐范围为28%,功耗为3.6mW.     

一种低调谐增益变化的宽带电感电容压控振荡器

设计了一个应用于数字电视调谐器的宽带电感电容压控振荡器.该振荡器包含了一个开关可变电容阵列,用以抑制调谐增益的变化.整个电路采用0.18μm CMOS工艺实现.测试结果表明:压控振荡器的频率范围从1.17GHz至2.03GHz(53.8%);调谐增益从69MHz/V变化至93MHz/V,其变化幅度与最大值相比为25.8%;最差相位噪声为-126dBc/Hz@1MHz;在1.5V电源电压下,压控振荡器的功耗约为9mW.     

一种低调谐增益变化的宽带电感电容压控振荡器

设计了一个应用于数字电视调谐器的宽带电感电容压控振荡器.该振荡器包含了一个开关可变电容阵列,用以抑制调谐增益的变化.整个电路采用0.18μm CMOS工艺实现.测试结果表明:压控振荡器的频率范围从1.17GHz至2.03GHz(53.8%);调谐增益从69MHz/V变化至93MHz/V,其变化幅度与最大值相比为25.8%;最差相位噪声为-126dBc/Hz@1MHz;在1.5V电源电压下,压控振荡器的功耗约为9mW.     

超宽带无线收发机中的正交LC VCO设计

基于SMIC 0.18 μm CMOS工艺设计了一种可应用于MB-OFDM UWB无线收发机的宽带正交压控振荡器(QV-CO,Quadrature VCO).在研究VCO的相位噪声理论的基础上,采用了优化噪声的电路结构.此外,鉴于片上螺旋电感在VCO设计中的重要性,采用了一种快速选取工艺库螺旋电感的方法.仿真结果显示,QVCO的频率调谐范围为3.4～4.5 GHz,在1 MHz频率偏移处,相位噪声小于-119.6 dBc/Hz.在1.8 V电源电压下,电路总功耗为27 mw.     

1.2GHz 0.9mw单片低功耗压控振荡器

文章设计了一种1.2GHz的单片集成压控振荡器,使用键合线(bond wire)电感,通过对相噪声的分析和优化,最大限度地降低了电路功耗.采用TSMC 0.18μm工艺和NEC封装,在1.8V电源电压下,功耗为0.9mW,中心频率1.2GHz,相噪声为-115dBc/Hz@100kHz.     

一种用于Bluetooth发接器的倍频式VCO

介绍了一种适用于 Bluetooth发接器的 ,可以单片集成的倍频式压控振荡器 ( VCO)。这种 VCO由两部分组成 ,主 VCO的振荡频率是所需本振频率的一半 ,然后采用“注入锁频”原理对主 VCO的振荡频率进行倍频以产生本振信号。主 VCO和倍频电路都使用了片上集成螺旋电感 ,调谐用的变容元件使用 PMOS晶体管实现。经过版图设计和后仿真 ,在 TSMC0 .35 μm数字 COMS工艺 ,3.3V电源电压下 ,该 VCO在 2 .4GHz中心频率附近可以达到的相位噪声指标为 -1 2 5 d Bc/Hz( 60 0 k Hz) ,在输出摆幅为 60 0 m Vp- p时 ,功耗为 2 2 m W。     

一种适用于2 4GHz ISM射频波段的全集成CMOS压控振荡器

提出了一种频率可调范围约 2 30MHz的全集成LC压控振荡器 (VCO) .该压控振荡器是用 6层金属、0 18μm的标准CMOS工艺制造完成 .采用MOS晶体管和电容组合来实现等效变容管 ,为降低芯片面积仅使用一个片上螺旋电感 ,并实施了低电压、低功耗的措施 .测试结果表明 ,该压控振荡器在电源电压为 1 8V的情况下功耗约为10mW ,在振荡器中心频率为 2 46GHz时的单边带相位噪声为 - 10 5 89dBc/Hz @6 0 0kHz .该压控振荡器可以应用于锁相环电路或频率综合器中.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.