Hg1—xCdxTe液相外延薄膜的光致发光

用红外光荧光测量分析了Ｈｇ１－ｘＣｄｘＴｅ液相外延薄膜的发光特性，观察到局域激子及束缚激子发光，当外延层减薄至２μｍ后，ＰＬ信号的峰位将向高能方向移动，这是由于外延薄膜纵向组份不均匀引起的。     

热壁外延CdTe/(111)CdTe薄膜的光致发光光谱

研究了热壁外延CdTe/(111)CdTe薄膜77～200K的光致发光光谱。在77K首次观察到了CdTe的自由激子第一激发态的发光峰1.588eV。热壁外延CdTe薄膜具有很强的自由激子发光峰和微弱的缺陷发光,以及很好的横向均匀性,边缘发光峰的半宽度8.3meV是迄今报道中最窄的。光致发光光谱研究表明,热壁外延CdTe/(111)CdTe薄膜明显优于CdTe体材料。     

MgxZn1-xO单晶薄膜和MgZnO/ZnO异质结构的光学性质

报道了利用等离子辅助分子束外延技术,在蓝宝石c平面上外延生长的MgxZn1-xO单晶薄膜以及MgZnO/ZnO异质结构的光学性质.室温下随着Mg浓度增加,合金薄膜样品的发光峰与吸收边均向高能侧移动.研究了样品紫外发光的起因,将MgxZn1-xO合金薄膜的发光归结为束缚激子的复合.在Mg0.08Zn0.92O/ZnO样品中,观察到了分别来自于ZnO层和MgZnO盖层的发光和吸收,并将其归因于来自ZnO层的自由激子和MgZnO盖层的束缚激子发射.     

Mg_xZn_(1-x)O单晶薄膜和MgZnO/ZnO异质结构的光学性质

报道了利用等离子辅助分子束外延技术,在蓝宝石c平面上外延生长的Mgx Zn1 - x O单晶薄膜以及Mg Zn O/Zn O异质结构的光学性质.室温下随着Mg浓度增加,合金薄膜样品的发光峰与吸收边均向高能侧移动.研究了样品紫外发光的起因,将Mgx Zn1 - x O合金薄膜的发光归结为束缚激子的复合.在Mg0 .0 8Zn0 .92 O/ Zn O样品中,观察到了分别来自于Zn O层和Mg Zn O盖层的发光和吸收,并将其归因于来自Zn O层的自由激子和Mg Zn O盖层的束缚激子发射     

ZnO材料的生长及表征

氧化锌材料是新一代宽禁带光电子半导体材料和场致发射材料，通过等离子体分子束外延设备，在a-plane的蓝宝石衬底上生长了高质量的氧化锌外延材料。在生长过程中用反射高能电子束衍射仪(RHEED)，研究了生长时材料薄膜的表面形貌。为了使材料更好地应用于器件，研究了材料的掺杂性质。研究了给体束缚激子(Donor bound exeiton (DX))、自由激子(Free exciton(EX))和受体束缚激子(Aeeeptor bound exciton (AX))随温度变化的发光过程。用紫外-可见透射光谱研究了ZnO薄膜材料的透射光谱性质。结果表明，用分子束外延生长设备成功地生长了高质量的氧化锌薄膜材料。     

ZnSe薄膜的激子光谱

采用分子束外延 (MBE)技术 ,在 Ga As(1 0 0 )衬底上生长了厚度从 0 .0 4 5到 1 .4μm的 Zn Se薄膜 .X射线衍射谱证实 ,随着薄膜厚度的增加 ,应变逐步弛豫 .测量了低温下样品的反射谱和光致发光谱 ,观察到轻重空穴的能级在不同应变下的分裂、移动和反转 ,以及激子极化激元 (Po-lariton)对反射谱的影响 .也观察到束缚激子发光随着薄膜厚度的变化规律 :束缚在中性受主杂质上的束缚激子发光 (I1峰 )随着薄膜厚度的增加逐渐变弱直至消失 ,而束缚在中性施主杂质上的束缚激子发光 (I2 峰 )则随着厚度增加逐渐增强 .     

ZnSe薄膜的激子光谱

采用分子束外延(MBE)技术,在GaAs(100)衬底上生长了厚度从O.045到1.4μm的ZnSe薄膜.X射线衍射谱证实,随着薄膜厚度的增加,应变逐步弛豫.测量了低温下样品的反射谱和光致发光谱,观察到轻重空穴的能级在不同应变下的分裂、移动和反转,以及激子极化激元(Polariton)对反射谱的影响.也观察到束缚激子发光随着薄膜厚度的变化规律:束缚在中性受主杂质上的束缚激子发光(I1峰)随着薄膜厚度的增加逐渐变弱直至消失,而束缚在中性施主杂质上的束缚激子发光(I2峰)则随着厚度增加逐渐增强.     

电化学方法生长有序纳米柱阵列的发光性质

采用电化学方法在磁控溅射方法生长的ZnO薄膜上生长垂直于衬底排列的ZnO纳米柱.ZnO薄膜的作用主要是为ZnO纳米柱的生长提供同质外延层.电化学生长的ZnO纳米柱具有良好的晶体质量和发光性能.通过研究其变温发光光谱可以确定其紫外发光峰来自于带边激子的辐射复合.此种方法生长的ZnO纳米柱在场发射显示、蓝紫色和白光发光二极管方面有潜在的应用前景.     

SiGe／Si量子阱结构材料的激子发光谱

在用分子束外延生长的ＳｉＧｅ／Ｓｉ多量子阱结构中，观察到激子发光光谱，从无声子参与的或ＴＯ－声子参与的激子发光峰位能量，计算了量子阱中合金的组份，并与通过Ｘ－射线衍射谱得到的结果作了比较，发现在Ｇｅ的组份比较小时，利用激子发光峰位能量确定合金组份比利用Ｘ－射线衍射谱更为方便和精确．     

900℃空气退火对L-MBE生长的ZnO薄膜发光特性的影响

采用激光分子束外延法在蓝宝石衬底(0001)上生长了高度c轴择优取向的高质量ZnO薄膜,在空气中对生长的薄膜进行900℃退火处理,并对退火前后样品的结晶质量、发光特性采用X射线衍射(XRD)、变温光致发光(PL)研究.退火处理后的ZnO薄膜(0002)面XRDθ-2θ扫描曲线强度明显增强.在光致发光实验中,观测到薄膜分别在3.352,3.309和3.237eV附近有3个明显的近紫外发光峰,分别对应自由激子发射、中性施主或受主束缚激子I9及其声子伴线1Lo.随着温度升高,峰位逐渐向长波方向移动(即所谓"红移"),半高宽(FWHM)逐渐展宽;在发光谱中,来自于晶体缺陷的深能级(DL)区发光强度极小.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first