三苯基硅基在有机合成领域的应用研究进展

三苯基硅基是一种应用活跃的有机合成单元模块，在医药、化工、食品等领域有着十分重要的应用意义。综述了近五年三苯基硅基在有机合成领域的研究进展。先后介绍了三苯基硅基在药物不对称合成、治疗癌症候选物、药物缓释微球等医药工业的应用研究；三苯基硅基在有机电致发光材料、催化剂、手性中间体、路易斯酸、电活性材料、有机配体、超分子化学等化工领域的应用研究。对三苯基硅基在有机合成领域的发展进行了展望。     

六甲基二硅脲的合成与应用

介绍了以三甲基氯硅烷、氨及尿素为原料合成六甲基二硅脲的方法,以及六甲基二硅脲在药物合成中的应用。     

介孔硅纳米材料的制备及其在药物缓控释中的应用进展

介孔硅纳米材料具有比表面积大、介孔结构高度有序、表面易修饰及对药物缓控释等特点,被广泛用作诊断、治疗药物递送的载体材料。综述了介孔硅纳米材料的基本特性、制备方法、在药物缓控释系统中的应用及影响因素。介孔硅纳米材料的孔径、表面性质、孔隙结构等因素是影响其缓控释性能的主要因素,可以通过改变制备工艺参数得到不同结构的介孔硅纳米材料,进而调控其载药释药性能。因此,设计、制备具有特定结构和药物缓控释性能的介孔硅纳米材料是目前药剂学领域的研究热点之一。     

二氟硅烯研究进展

综述了二氟硅烯的研究进展,对二氟硅烯的制备、检测、理论研究及应用进行了总结,简要阐述了二氟硅烯的制备及在等离子体领域的应用;重点阐述了二氟硅烯的红外光谱检测技术、二氟硅烯理论计算取得的研究进展、二氟硅烯在无机/有机化学中的应用。并提出了二氟硅烯在制备中存在的问题以及未来的研究方向。     

介孔硅提高依非韦伦溶解性的研究

研究介孔硅作为难溶性药物依非韦伦的载体材料在提高其溶解性方面的应用。称取依非韦伦400 mg,溶解于1 mL甲醇,向溶液中加入400 mg介孔硅,采用溶液吸附法制备依非韦伦介孔硅载药物。对比依非韦伦原料药,依非韦伦/介孔硅物理混合物及依非韦伦介孔硅载药物在2%十二烷基硫酸钠水溶液中60min内的溶出曲线;采用扫描电镜表征依非韦伦介孔硅载药物的表面形貌;利用N2吸附对比介孔硅材料载药前后的比表面积和孔容积;通过X-射线衍射、差示扫描量热表征载药物的性质。溶液吸附法制备的依非韦伦介孔硅载药物中依非韦伦含量为29.6%,药物全部以无定型态装载于介孔硅孔道中。与原料药和物理混合物比较,依非韦伦介孔硅载药物的溶出速度明显提高,溶出度与原料药和依非韦伦/介孔硅物理混合物相比提高2.5倍。介孔硅作为载体材料能显著提高依非韦伦的溶解度,为增加难溶性药物溶解度提供新思路。     

化妆品中用硅粉、硅悬浮液的最新技术(日)

硅是化妆品生产不可缺少的原料之一。介绍了硅粉、硅悬浮液用于化妆品生产的最新技术, 特别是毛发调理产品中的应用。硅粉作为固体原料有望成为化妆品中新产品的生产原料。     

化妆品用硅粉,硅悬浮液的最新技术（日）

硅是化妆品生产不可缺少的原料之一。介绍了硅粉、硅悬浮液用于化妆品生产的最新技术，特别是毛发调理产品中的应用。硅粉作为固体原料有望成为化妆品扣新产品的生产原料。     

介孔硅纳米材料作为药物运输载体应用的研究进展

介孔硅纳米材料作为药物运输载体主要是将药物载入介孔中,用不同的"纳米阀门"阻塞孔道,使药物到达靶部位前零释放,然后通过不同的内部刺激(p H、温度、酶等)或外部刺激(光、磁场、超声等),"纳米阀门"移除、断裂或分解,控制药物释放,达到控释和缓释的作用。该文主要从介孔硅纳米材料的生物安全性、介孔硅的不同类型智能响应系统的研究进展,介孔硅纳米材料作为药用载体的不足及应用前景等方面进行综述。     

硅粉的活性及参考标准

简述了硅粉在甲基氯硅烷合成中的应用,提出了测定硅粉反应活性的参考标准。     

特种表面活性剂和功能性表面活性剂(ⅩⅦ)——氟硅表面活性剂的合成及应用

综述了氟硅表面活性剂的主要合成方法,如硅氢加成法、自由基聚合法及缩聚法;介绍了氟硅表面活性剂在橡胶、涂料、润滑剂及其他精细化学品等方面的应用及性能,最后对氟硅表面活性剂的发展进行了展望.     

Volatility Diagrams for Silica, Silicon Nitride, and Silicon Carbide and Their Application to High-Temperature Decomposition and Oxidation

Volatility diagrams—isothermal plots showing the partial pressures of two gaseous species in equilibrium with the several condensed phases possible in a system—are discussed for the Si-O and Si-N systems, and extended to the Si-N-O and Si-C-O systems, in which the important ceramic constituents SiO₂, Si₃N₄, Si₂N₂O, and SiC appear as stable phases. Their use in understanding the passiveactive oxidation transitions for Si, Si₃N₄, and SiC are demonstrated.     

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K

The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO₂ film apparently was the rate-controlling process.     

Cathodoluminescence from Implanted and Anodized Polycrystalline Silicon Films

Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue emission is enhanced by implantation and by slight anodization treatments. Our investigations are consistent with previous PL results and indicate that the origin of blue emission is related to quantum confinement effects. On the other hand, the effect of annealing in these samples is a reduction of the CL signal that could be related to the increase of the nanocrystals size.     

Nitridation behavior of silicon powder compacts of various thicknesses with Y2O3 and MgO as sintering additives

The effects of the nitriding temperature (1300 and 1350°C), holding time (0‐4 hours), and thickness of Si powder compacts on the nitridation behavior of silicon were investigated by examining the nitridation rates, analyzing phase compositions, and observing the microstructures of nitrided compacts. Si powder compacts doped with Y₂O₃ and MgO as sintering additives were prepared with thicknesses of 3, 6, and 9 mm. The phases of nitrided compacts were transformed from Si to α‐Si₃N₄ and β‐Si₃N₄ with an increase in the nitriding temperature and holding time. The degree of nitridation increased with the nitriding temperature and holding time. The β/(α+β) ratio increased with the nitriding temperature and holding time, and with a decrease in the thickness of the Si powder compacts. However, all compacts exhibited the same tendency for a higher β/(α+β) ratio at the compact surface than in the bulk of the compact. The variation in the β/(α+β) ratio for each compact decreased with an increase in the nitriding temperature and holding time.     

Si3N4及其复合材料强韧化研究进展

简述了氮化硅陶瓷的结构、性能和制备工艺，并分别通过自增韧补强、纤维／晶须强韧化、层状结构强韧化、相变强韧化以及颗粒弥散强韧化等方法对氮化硅陶瓷的强韧化研究进行了分类叙述。     

六甲基二硅胺的研究进展

六甲基二硅胺是重要的有机硅试剂之一,可由三甲基氯硅烷和氨气反应制备,在有机合成反应中用于基团的保护、改性剂和催化剂等,在有机材料方面可用于表面改性、神经组织扫描和等离子体聚合等。综述了六甲基二硅胺在有机合成以及在材料方面的研究进展。     

Combustion of silicon powders containing organic additives in nitrogen gas under pressure: 2. Composition of combustion products

Combustion of silicon powders containing organic dopants in nitrogen gas under pressure was found to yield a mixture of α-Si₃N₄, β-Si₃N₄, SiC, and Si₂N₂O. Relative amount of these compounds in combustion product was found to depend on the pressure of nitrogen gas, type and concentration of dopants, combustion geometry, and cooling rate. The formation of α-Si₃N₄ was found to occur in the presence of oxygen-containing dopants. The type of dopant was also found to affect the morphology of product particles.