一种单端10-bit SAR ADC IP核的设计

本设计通过采用分割电容阵列对DAC进行优化,在减小了D/A转换开关消耗的能量、提高速度的基础上,实现了一款采样速度为1 MS/s的10-bit单端逐次逼近型模数转换器。使用cadence spectre工具进行仿真,仿真结果表明,设计的D/A转换器和比较器等电路满足10-bit A/D转换的要求,逐次逼近A/D转换器可以正常工作。     

99.83% Switching energy reduction over conventional scheme for SAR ADC without reset energy

A high-efficient switching method for successive approximation register (SAR) analogue-to-digital converter (ADC) is proposed. With the proposed variable resolution SAR ADC architecture, the average switching energy and area can be reduced by 99.60 and 73.54% respectively compared to the conventional scheme. Combined with C–2C capacitor array and unilateral monotonic scheme, the proposed two-step architecture achieves 99.83% less average switching energy and 76.37% less area reduction over the conventional approach. Furthermore, these two methods have no rest energy consumption.     

一种新型的SAR ADC电容阵列混合转换方案

针对逐次逼近寄存器型模数转换器(SAR ADC),提出了一种高能效的新型混合转换方案,将单调转换方式、拆分电容转换技术与一种新型电容转换方式相融合。在前三次比较周期内,新型混合转换方案SAR ADC的电容阵列不需要电源补充能量;在剩余的比较周期内使用单调转换方式,使转换能耗进一步降低。同时,新型混合转换方案在采用更少电容的情况下,获得与传统结构相同的转换精度。模型仿真结果表明,采用新型混合转换方案后,SAR ADC电容阵列的转换能耗较传统结构减少了99%。     

Parametric fault detection of analog circuits based on Bhattacharyya measure

A high energy and area efficiency switching scheme for successive approximation register (SAR) analog-to-digital converter (ADC) is presented. The proposed procedure achieved 99.8% saving in switching energy and 97.4% reduction in total capacitance when applied to a 10-bit SAR ADC, compared to the conventional switching scheme. The switching energy has been calculated by taking into account both the power consumed in the switching processes and the reset energy.     

A 12-bit 10-MS/s SAR ADC with a weighted sampling time technique applied to C-DAC

This paper presents a low power 12-bit 10-MS/s successive approximation register (SAR) analog-to-digital convert (ADC) for bio-signal signal processing in wearable sensor systems. A weighted sampling time technique applied to a capacitor digital to analog converter (C-DAC) is employed to reduce the power consumption of the conventional SAR ADC with minimum performance sacrifice. The proposed technique helped reduce its energy consumed by MSB, MSB-1, MSB-6, and MSB-7 capacitors by more than 40% compared with that of the conventional C-DAC. Another technique, a voltage scaling method is also employed to lower the power supply voltage from 1.2 to 0.6 V for all the digital logics except the output registers, such that it results in a power reduction of 70%. The proposed ADC is implemented with the standard CMOS 65 nm 1-poly 6-metal n-well process. The ADC achieves DNL/INL of?±?1.2LSB/?±?1.5LSB, ENOB of 10.3-b, power consumption of 31.2 μW, and Walden FoM of 2.7fJ/step.

     

Switching scheme with 98.4% switching energy reduction and high accuracy for SAR ADCs

An energy-efficient digital-to-analogue converter (DAC) switching scheme with high-accuracy is proposed for successive approximation register (SAR) analogue-to-digital converters (ADCs). By utilizing a complementary switching method, the proposed switching scheme achieves a 98.4% switching energy reduction and a 75% area reduction compared to the conventional SAR ADC. Moreover, the accuracy of the SAR ADC is independent on the accuracy of the third reference voltage (V_cm) except the least significant bit, and the common-mode voltage of the DAC outputs keeps approximately unchanged during a conversion cycle, making the design of the SAR ADC more relaxed.     

An efficient threshold voltage generation for SAR ADCs

In this paper, a new architecture for successive-approximation register (SAR) analog-to-digital converters (ADCs) is presented. In the proposed scheme, the threshold voltage for each comparison is divided into two parts. This results in appreciably less switching energy and less total capacitance without a substantial increase in digital complexity compared to the conventional SAR ADC. Analytical calculations and circuit level simulation results in the context of a 10-bit 100 kS/s ADC are provided to verify the usefulness of the proposed SAR ADC scheme revealing 87 % less switching power and 40 % less total capacitance in comparison with the conventional SAR ADC.     

A 1.33 μW 10-bit 200KS/s SAR ADC with a tri-level based capacitor switching procedure

A 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) using an energy-efficient tri-level based capacitor switching procedure is presented. The proposed switching procedure achieves 97.66% less switching energy when compared to the conventional method. The number of unit capacitors is reduced by a factor of 4 over that of conventional architecture as well. To make the power consumption of the comparator scale down with respect to the comparison rate, the fully dynamic comparator is used. Moreover, the dynamic logic circuit is implemented to further reduce the power of digital circuits. The ADC is implemented in a 0.18 μm 1P6M CMOS technology. At 1.0-V power supply and 200KS/s, the ADC achieves an SNDR of 60.54 dB and consumes 1.33 μW, resulting in a figure-of-merit (FOM) of 7.7 fJ/conversion-step. The ADC core occupies an active area of only 230×400 µm².     

High-linear,energy-efficient and area-efficient switching algorithm for high-speed SAR ADCs

Decreasing the size of DAC capacitors is a solution to achieve high-speed and low-power successive-approximation register analog-to-digital converters (SAR ADCs). But decreasing the size of capacitors directly effects the linearity performance of converter. In this paper, the effect of capacitor mismatch on linearity performance of charge redistribution SAR ADCs is studied. According to the achieved results from this investigation, a new tri-level switching algorithm is proposed to reduce the matching requirement for capacitors in SAR ADCs. The integral non-linearity (INL) and the differential non-linearity (DNL) of the proposed scheme are reduced by factor of two over the conventional SAR ADC which is the lowest compared to the previous schemes. In addition, the switching energy of the proposed scheme is reduced by 98.02% as compared with the conventional architecture which is the most energy-efficient algorithms in comparison with the previous algorithms, too. To evaluate the proposed method an 8-bit 50 MS/s SAR ADC is designed in 0.18 um CMOS process technology. According to the obtained simulation results, the designed ADC digitizes a 25-MHz input with 48.16 dB SNDR while consuming about 589 μW from a 1.2-V supply.     

基于分段电容阵列的改进型逐次逼近型ADC

为缩短高速模数转换器(ADC)中高位(MSB)电容建立时间以及减小功耗,提出了一种基于分段式电容阵列的改进型逐次逼近型(SAR)ADC结构,通过翻转小电容阵列代替翻转大电容阵列以产生高位数字码,并利用180 nm CMOS工艺实现和验证了此ADC结构。该结构一方面可以缩短产生高位数码字过程中的转换时间,提高量化速度;另一方面其可以延长大电容的稳定时间,减小参考电压的负载。通过缩小比较器输入对管的面积以减小寄生电容带来的误差,提升高位数字码的准确度。同时,利用一次性校准技术减小比较器的失配电压。最终,采用180 nm CMOS工艺实现该10 bit SAR ADC,以验证该改进型结构。结果表明,在1.8 V电源电压、780μW功耗、有电路噪声和电容失配情况下,该改进型SAR ADC得到了58.0 dB的信噪失真比(SNDR)。     

基于16位SAR模数转换器的误差校准方法

为了实现较高精度(16位及更高)的逐次逼近(SAR)ADC,提出了一种误差自动校准技术。考虑到芯片面积、功耗和精度的折中,采用了电荷再分配分段电容DAC结构,并采用准差分输入方式提高ADC的信噪比。为了消除电容失配引入的误差,提出了一种误差自动校准算法,利用误差校准DAC阵列对电容失配误差进行量化并存储在RAM中,在AD转换过程中实现误差消除。     

An MCT-Based Bit-Weight Extraction Technique for Embedded SAR ADC Testing and Calibration

This paper presents a self-testing and calibration technique for the embedded successive approximation register (SAR) analog-to-digital converter (ADC) in system-on-chip (SoC) designs. We first proposed a low cost design-for-test (DfT) technique that estimates the SAR ADC performance before and after calibration by characterizing its digital-to-analog converter (DAC) capacitor weights (bit weights). Utilizing major carrier transition (MCT) testing, the required analog measurement range is only about 1 LSB; this significantly reduces test circuitry complexity. Then, we develop a fully-digital calibration technique that utilizes the extracted bit weights to correct the non-ideal I/O behavior induced by capacitor mismatch. Simulation results show that (1) the proposed testing technique achieves very high test accuracy even in the presence of large noise, and (2) the proposed calibration technique effectively improves both static and dynamic performances of the SAR ADC.     

一种基于VCM开关切换的12位20 MS/s SAR ADC

设计了一种12位、采样率为20 MS/s的逐次逼近型模数转换器(SAR ADC)。整体电路为全差分结构,采用了一种基于VCM开关切换的分段式电容阵列。同时,比较器结合了前置运放和动态锁存器,与异步时序相配合,实现了SAR ADC高速工作。此外,采样电路采用栅压自举技术,提高采样的线性度。芯片基于TSMC 180 nm 1P5M CMOS工艺设计。仿真结果表明,当采样率为20 MS/s时,SAR ADC有效位数为11.94 bit,无杂散动态范围为86.53 dBc,信噪比为73.66 dB。     

Energy-efficient switching scheme for SAR ADC with only two reference voltages

An energy-efficient switching method for successive approximation register analog to digital converter is presented in this letter.The proposed two-step switching scheme using the goblet architecture achieves 99.52% less switching energy and 21.09% area reduction over the conventional switching scheme. Moreover, owing to the application of the goblet architecture, the proposed scheme employs only two reference voltages without any requirements for stability or accuracy of the third voltage level.     

一种用于暗光环境下的CMOS图像传感器的非线性模数转换器

从优化算法、硬件结构和模拟结果入手,通过对CMOS图像传感器暗光环境下模数转换电路的优化设计,提出了一种暗光环境下性能提升的大动态范围非线性模数转换器的设计.在模拟电路模块完成了暗光优化图像处理算法,使暗光环境下光电转换数字码密度增大,在不增加额外芯片面积和功耗的同时,提高了CMOS图像传感器的暗光图像性能.     

一种10bit双通道流水线SAR ADC设计

为了提高模数转换器的采样频率并降低其功耗,提出一种10 bit双通道流水线逐次逼近型（SAR）模数转换器（ADC）。提出的ADC包括两个高速通道,每个通道都采用流水线SAR结构以便低功率和减小面积。考虑到芯片面积、运行速度以及电路复杂性,提出的处于第二阶段的SAR ADC由1 bit FLASH ADC和6 bit SAR ADC组成。提出的ADC由45 nm CMOS工艺制作而成,面积为0.16 mm2。ADC的微分非线性和积分非线性分别小于0.36 最低有效位（LSB）和0.67 LSB。当电源为1.1 V时,ADC的最大运行频率为260 MS/s。运行频率为230 MS/s和260 MS/s的ADC的功率消耗分别为13.9 mW和17.8 mW。     

An 8-bit, 10 kHz, 5.1 μW, 0.18 μm CMOS SAR ADC for RFID applications with sensing capabilities

An 5.1 μW, 1.8 V, 8-bit, successive approximation (SAR) analog-to-digital converter (ADC) using 10 kHz clock was designed and fabricated in a 0.18 μm CMOS technology for passive UHF radio frequency identification (RFID) applications. The ADC utilises a resistive digital to analog converter (DAC). The ADC can operate with low power consumption. The proposed comparator with cascode active load can offer large gain and can operate at a low supply voltage. The measured total power consumption is 5.1 μW at a 10 kHz input clock with a 1.8 V single supply, and 0.5 μW with 970 mV supply.     

A 10-bit 50-MS/s redundant SAR ADC with split capacitive-array DAC

A new architecture for successive-approximation register analog-to-digital converters (SAR ADC) using generalized non-binary search algorithm is proposed to reduce the complexity and power consumption of the digital circuitry. The proposed architecture is based on the split capacitive-array DAC with a simple switching logic as compared to the conventional non-binary SAR ADC architecture. A 10-bit 50-MS/s SAR ADC is designed based on the proposed architecture in a 0.18 μm CMOS technology. Simulation results show that at a supply voltage of 1.2 V, the SAR ADC achieves a peak signal-to-noise-and-distortion ratio of 59.5 dB, and a power consumption of 1.3 mW, resulting in a figure of merit of 33 fJ/conversion-step.     

A 13-bit noise shaping SAR–ADC with dual-polarity digital calibration

We present a new noise shaping method and a dual-polarity calibration technique suited for successive approximation register type analog to digital converters (SAR–ADC). Noise is pushed to higher frequencies with the noise shaping by adding a switched capacitor. The SAR capacitor array mismatch has been compensated by the dual-polarity digital calibration with minimum circuit overhead. A proof-of-concept prototype SAR–ADC using the proposed techniques has been fabricated in a 0.5-μm standard CMOS technology. It achieves 67.7 dB SNDR at 62.5 kHz sampling frequency, while consuming 38.3 μW power with 1.8 V supply.     

A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS

This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-V_t MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process.