压电薄膜压力分布计算机测试系统研究

提出了一种新型的压电薄膜（PVDF）压力分布计算机测试系统,它包括多点压电薄膜传感器、多点电荷放大装置、计算机采集处理系统;该系统可以实现全场、实时测量,其动态范围可达0.1～500 Hz;采用微机输出具有独特的图象动画显示,使测量结果更为直观;文中叙述了系统的工作原理以及实验测试,测试结果证实了系统的动态压力分布测量能力;本系统的研制为动态接触问题的研究及振动测试开发了新的研究工具.     

Ti 和 TiN 薄膜的制备以及残余应力的测试方法研究

基底曲率半径法是一种测量薄膜残余应力的常用方法,其中的光杠杆法应用最为广泛.文章在SUS304基底上使用电弧离子镀法制备了不同厚度的钛(Ti)和氮化钛(TiN)薄膜,研究了薄膜的形貌、密度以及物相,基于光杠杆原理分别从正面(正测法)和反面(背测法)对两种薄膜样品镀膜前后基底的曲率半径进行了测量,采用Stoney公式计算薄膜残余应力.通过对比正测法和反测法的测试结果,结合薄膜形貌、密度以及晶体结构表征分析,对背测法的测试误差和适用范围进行了分析.研究结果表明,背测法测得的应力值低于正测法的测量结果,薄膜残余应力水平越高,背测法的测量结果与正测法越接近:当薄膜残余应力水平较高(>1 GPa)时,背测法结果可以如实反映薄膜的应力水平;但当薄膜应力水平较低(<1 GPa)时,背测法结果存在较大误差.     

氧化钽感湿薄膜的研究

在Ar-O_2混合气氛中采用直流磁控反应溅射沉积制得了氧化钽薄膜.文章介绍了沉积薄膜的实验装置与工艺,叙述了反应溅射的过程与机理.用AES、XPS和X射线衍射研究了薄膜的成分与结晶结构,用Ta_2O_5薄膜研制成Si-MOS薄膜湿敏器件.测试结果表明:这种新的湿敏器件具有高的灵敏度和非常快的响应速度.     

导电聚合物薄膜声表面波传感器敏感特性研究

利用旋涂方法在声表面波(SAW)器件的延迟通道上制备了酞菁铜(CuPC)掺杂的聚乙烯吡咯烷酮(PVP)敏感薄膜,并对制备的薄膜用四探针法和扫描电子显微镜(SEM)进行了测试和表征。结果表明:薄膜中的CuPC颗粒均匀分散在聚合物薄膜中,其粒径尺寸约为20 nm,薄膜的电导率在10-6Ω-1.cm-1量级。根据提出的理论模型,计算出由于敏感膜的质量变化与电导率的变化导致了中心频率的漂移,该漂移值的理论计算结果与实验验证结果相符。     

新型体声波传感器读出电路的实验验证

为了实验验证此前通过仿真验证的基于六端口反射计的新型BAW传感器读出电路的方案的可行性,本文制作了新型BAW传感器读出电路并对其进行了测试.以串联谐振频率约为1.5 GHz的薄膜体声波谐振器(FBAR)为待测器件(DUT),设计、制作了一种能够满足该FBAR谐振频率测量带宽(1.3 GHz~1.7 GHz)要求的PCB上微带六端口网络和检波器,配合射频信号发生器和示波器,获得了模拟DUT(50ΩSMA匹配负载)的反射系数-频率(Γ-f)曲线测量结果.与矢量网络分析仪(VNA)的测量结果进行了对比,两者吻合较好,实验验证了"基于六端口反射计的BAW传感器读出电路"可用于FBAR谐振频率的测量.本文工作对实用化BAW传感器的研制和片上矢量网络分析仪(VNA-on-Chip)的设计都有借鉴意义.     

一种磁性薄膜/石英音叉复合磁传感器研究

针对磁电层复合式磁传感器Q值低的问题,提出一种磁性薄膜与石英音叉复合的磁传感器结构,通过测量音叉谐振频率变化量或Q值变化量达到检测静磁场的目的。采用有限元方法对磁性薄膜的位置进行了分析,发现薄膜复合于音叉侧臂顶部有最灵敏的磁场探测能力,并进行了实验验证。实验结果表明:测量Q值变化量比测量谐振频率变化量更优,最大灵敏度为119.471/mT,测量Q值分辨率为1,石英音叉Q值稳定度为20×10-6时,该磁传感器结构对磁场的分辨率为10-6T,敏感结构在零偏置磁场时Q值达2000左右。     

滤棒压降的快速检测分选系统设计

为缩短滤棒压降检测分选时间,降低实验人员劳动强度,设计了一种自动化程度高的滤棒压降快速测量分选方法及实验装置.装置采用满足烟草行业新标准技术要求的双通道测量头实现并行检测,流程操控以可编程逻辑控制器(PLC)技术集中控制气路替代复杂的电控部件.集成嵌入式单片机(MCU)芯片和高速ADS8341数据采集芯片实现精密压降传感器信号采集,并计算分析滤棒压降值的分选属性.以双路分选臂实现双通道测量结果的快速分选.实验选用不同标称值的标准滤棒测试装置的精度与重复性,以不同阻值的滤棒进行实验测试,结果表明:装置测量速度超过了600支/h,较单测量头的速度提升了1倍,且不需人工参与.标准棒降压测试精度达到了10 Pa,不同滤棒分选的准确率达到了100%,满足实验检测要求.     

薄膜微结构换能元温度测量技术研究

为了适应火工品微型化、集成化和智能化等发展趋势,薄膜微结构换能元的引发温度测试已成为一项亟需解决的关键问题。采用MEMS技术将薄膜铂电阻和薄膜微结构换能元集成在氮化硅基底上,利用原子力显微镜等设备对薄膜铂电阻的几何尺寸进行了表征,通过实验测量了薄膜微结构换能元在不同直流激励下铂电阻的阻值变化,从而得到了薄膜微结构换能元的温度响应曲线。此外,测得斯蒂芬酸铅的点火温度平均为318℃,与理论值330～350℃接近,验证了将薄膜铂电阻与薄膜微结构换能元集成于一体测量微小尺寸条件下发火温度的可行性与有效性。     

氧化担感湿薄膜的研究

在Ar-O2混合气氛中采用直流磁拉反应溅针沉积制得了氧化担薄膜。文章介绍了沉积薄膜的实验装置与工艺, 叙述了反应溅舫的过程与机理。用AES，XPS和X射线衍射研究了薄膜的成分与结晶结构, 用Ta2O5 薄膜研制成Si-MOS薄膜湿敏器件。测试结果表明, 这种新的湿敏器件具有高的灵敏度和非常快的响应速度。     

一种微型平面薄膜型酒敏器件的研制

粉末溅射有制靶简单、掺杂容易的特点,并有掺杂稳定的优点.利用反溅,发展了粉末溅射,制备了酒敏微型平面薄膜.对薄膜的相关特性进行了研究,给出了薄膜最佳掺杂范围、最佳灵敏度的膜厚以及响应时间与恢复时间随膜厚变化的规律,总结了最优参数.又测试了器件性能,通过实验对影响灵敏度测试的条件如测试电压和湿度影响灵敏度的规律进行了分析和讨论.结论认为,所研制的粉末溅射微型薄膜酒敏器件性能可靠、灵敏度高、稳定性好.     

A MEMS-Based Evaluation of the Mechanical Properties of Metallic Thin Films

Characterizing the mechanical properties of metal thin films is critical for the design and fabrication of metal microelectromechanical systems and integrated circuit devices. This paper focuses on wafer-level determination of the mechanical behavior of sputtered aluminum and nickel thin films, using a variety of measurement techniques. Elastic moduli have been determined in devices fabricated with standard micromachining techniques using bulge testing of square diaphragms and lateral resonator structures. We find a Young's modulus of ~70 GPa for Al and ~200 GPa for Ni, in agreement with data for the bulk metals. Using pressurize/depressurize cycles, the load-deflection curves of the membranes have also been determined, and in conjunction with finite element simulations, were used to determine the yield strength and fracture strength of these films. Residual stresses in the films have also been investigated using wafer curvature, bulge testing, and X-ray diffraction. The merits of each measurement technique are discussed.     

Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures

T-shape, LPCVD silicon nitride cantilevers are fabricated to determine Young's modulus and fracture strength of silicon nitride thin films at room and cryogenic temperatures. A helium-cooled measurement setup is developed and installed inside a focused-ion-beam (FIB) system. A lead-zirconate-titanate (PZT) translator powered by a function generator and a dc voltage is utilized as an actuator, and a silicon diode is used as a temperature sensor in this setup. Resonant frequencies of identical cantilevers with different "milling masses" are measured to obtain thickness and Young's modulus of the silicon nitride thin films, while a bending test is performed to obtain fracture strength. From the experiment, the average Young's modulus of low-pressure chemical-vapor deposition (LPCVD) silicon nitride thin films varies from 260.5 GPa at room temperature (298 K) to 266.6 GPa at 30 K, and the average fracture strength ranges from 6.9 GPa at room temperature to 7.9 GPa at 30 K. The measurement setup and technique presented here can be used to characterize the mechanical properties of different MEMS materials at cryogenic temperatures.     

A new technique for measuring the mechanical properties of thinfilms

Accurate measurement of mechanical properties is very difficult for films that are only a few microns thick. Previously, these properties have been determined by indirect methods such as cantilever beam and diaphragm bulge tests. This paper presents a new technique to measure the Young's modulus of thin films in a direct manner consistent with its definition. Strain is measured by a laser-based technique that enables direct and accurate recording of strain on a thin-film specimen. Load is recorded with a 1-lb load cell, and an air bearing is used to eliminate friction in the loading system. The specimen is phosphorus-doped polysilicon that has a gage cross section of 3.5 μm thick by 600 μm wide. All 29 uniaxial tensile tests show brittle behavior, and the average values of Young's modulus and fracture strength are measured to be 170±6.7 GPa and 1.21±0.16 GPa, respectively. One fatigue test is also reported in this paper     

基于虚拟仪器的热电偶温度测试与分析系统

介绍了应用于导热系数测试实验台的热电偶温度测试系统，利用串行接口对温度巡检仪进行数据读取和参数设置。为提高采样和数据处理效率，开发了IabVIEW环境下的虚拟仪器。该系统可将热电偶温度数据读人计算机并进行相应的分析计算，实现信号的实时采集，简化了操作步骤，提高了测量精度。该系统的设计对数据采集、显示、串行通信等在生产和实验中的应用具有一定的借鉴和推广作用。     

Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films

In this paper, the Poisson's ratio of low-temperature plasma-enhanced chemical vapor deposited silicon nitride thin films has been determined by a modified double-membrane bulge test. This test method utilizes a square membrane and a large-aspect-ratio rectangular membrane that is fabricated alongside from the same thin film. The Poisson's ratio is determined from the ratio of the bulge deflections of the two membranes under an applied pressure. The method is suitable for determining of either stress-free thin films or those containing low tensile residual stresses. Poisson's ratio values of 0.23 0.02 and 0.25 0.01 were measured for films that were deposited at 125 and 205 , respectively.     

一种MEMS薄膜材料的力学性能测试方法

介绍了一种用于MEMS薄膜材料力学特性测试的单轴拉伸试验方法。其特点是微小试件两端固定,且与加载机构集成在基片上,从而可减少操作工作量,提高对准精度。整个机构以微细加工方法制成,硅类试件以干法蚀刻成型,金属类试件以电镀方法成型,其余加载机构以湿法刻蚀制成。试验表明:使用此机构可以简单且高精度地对薄膜试件进行拉伸试验,获得多项力学性能参数,从而为MEMS器件设计和分析提供可靠的理论基础。     

xperimental investigation on cumulative propagation of thin film buckling under cyclic load

As instrument technology is needed for rapid determination of the smaller,thinner and lighter specimens,more stringent demands are related to thin films such as micro-electro-mechanical systems(MEMS),dielectric coatings and electronic packaging.Therefore,the requirement for testing platforms for rapidly determine the mechanical properties of thin films is increasing.Buckling of a film/substrate system could offer a variety of applications,ranging from stretchable electronics to micro-nanoscale metrology.In ...     

Magnetron sputtering of piezoelectric AlN and AlScN thin films and their use in energy harvesting applications

This paper reports on the deposition of AlN and Al_XSc_1?XN films by pulse magnetron sputtering. The first part will focus on the Al_XSc_1?XN deposition process in comparison to the already established AlN process. The effect of doping AlN with Sc regarding piezoelectric and mechanical properties is presented. The films show the expected increase of piezoelectric properties as well as the softening of the material with higher Sc concentrations. Above a threshold concentration of around 40 % Sc in the Al_XSc_1?XN films, there exists a separation into two phases, an Al-rich and a Sc-rich wurtzite phase, which is shown by XRD. At Sc concentrations higher than 50 %, the films are not piezoelectric, as the films are composed primarily of the cubic ScN phase. The second main part of this paper evaluates the films for application in energy harvesting. Especially the Sc doping allows a significant increase in the energy generated in our test setup. Directly measuring the AC voltage at resonance depending on load resistance with base excitation of ±2.5 µm, 350 µW power have been generated under optimum conditions compared to 70 µW for pure AlN. For a more application oriented measuring setup, a standard and a SSHI-based (“Synchronised Switch Harvesting on Inductor”) AC/DC converter circuit have been tested. The SSHI interface showed a significant improvement to 180 % compared to the standard interface.     

Fabrication of TiN-based three-terminal nano mechanical relays using nanoimprint technology

This paper reports the fabrication of nanoscale mechanical relays using a nanoimprint technology, called contact-transfer and mask-embedded lithography. This cost effective method facilitates the fabrication of nanoscale metallic source electrodes in one easy step. For the design and simulation of relays, we developed a purpose-built system to measure the resonant frequency of TiN nano-structures to determine the mechanical properties of nanoscale thin films. The results presented a Young’s modulus of approximately 600 GPa and residual stress low enough to be disregarded in the proposed process. Finally, we succeeded in fabricating three-terminal nano-relays of various lengths, the operation of which was demonstrated by measuring the I–V curve of each device. Measured pull-in voltages were compared with those of the simulation results.     

Wafer-level mechanical characterization of silicon nitride MEMS

The mechanical and physical properties of silicon nitride thin films have been characterized, particularly for their application in load-bearing MEMS applications. Both stoichiometric (high-stress) and silicon-rich (low-stress) films deposited by LPCVD have been studied. Young's modulus, E, has been determined using conventional lateral resonators and by bulge testing of membranes, and tensile strength has been determined using a specially designed microtensile specimen. All microdevices have been fabricated using standard micromachining. We have also measured the thermal expansion coefficient of stoichiometric silicon nitride. Our best estimate of E is 325/spl plusmn/30 GPa for stoichiometric and 295/spl plusmn/30 GPa for silicon-rich silicon nitride. The average tensile strength for the stoichiometric material is 6.4/spl plusmn/0.6 GPa, while that for the silicon-rich material is 5.5/spl plusmn/0.8 GPa; the burst strength of membranes of the stoichiometric material is 7.1/spl plusmn/0.2 GPa.