La~(3+)掺杂对焦绿石型Bi_2O_3—ZnO-Nb_2O_5陶瓷结构和介电性能的影响

采用固相反应法制备(Bi1.5LaxZn0.5—x)(Zn0.5+xNb1.5—x)O7(BZNL,x=0.01~0.07mol)焦绿石型陶瓷。利用X射线衍射仪和高阻抗分析仪(LCR)对样品结构、结晶化学特性与介电性能进行表征。结果表明:所有陶瓷样品均保持单一的立方焦绿石相;随La3+替代量的增加,陶瓷样品中A位阳离子与8b位O′的平均键长r(O′—A)从0.228 36nm增加到0.228 46nm;键价和AV(O′)[Bi3La]、AV(O′)[Bi2ZnLa]、AV(O′)[Bi2La2]、AV(O′)[BiZn2La]随之减小;48f位氧的坐标ζ从0.028 27nm增加到0.029 03nm;样品的介电弛豫峰值温度Tm向低温方向移动,峰值介电常数εm依次减小,当替代量x=0.07mol时,介电弛豫峰值温度Tm降低到最低温度(—107.4℃),峰值介电常数εm为136.35。样品介电弥散性的增强与八面体结构的转变有关。     

低温烧结CuO-V_2O_5-Bi_2O_3掺杂Zn_3Nb_2O_8陶瓷的微波介电性能

研究了CuO–V2O5–Bi2O3作为烧结助剂对Zn3Nb2O8陶瓷的烧结特性、微观结构、相结构及微波介电性能的影响。CuO–V2O5–Bi2O3复合掺杂可以将Zn3Nb2O8陶瓷的烧结温度从1150℃降到900℃。在900℃烧结4h的Zn3Nb2O8–0.25%(质量分数,下同)CuO–1.5%V2O5–1.5%Bi2O3陶瓷的密度达到了理论密度的98.1%,相对介电常数为18.8,品质因数与谐振频率之积为39442GHz。该体系的介电性能和陶瓷的致密度与烧结助剂的含量及烧结温度密切相关,陶瓷的致密度和相对介电常数随CuO–V2O5–Bi2O3烧结助剂含量的增加而增加,同样陶瓷的致密度和相对介电常数也随烧结温度的升高而提高。     

Sm2O3掺杂的Bi2O3-ZnO-Nb2O5基陶瓷的烧结特性与介电性能

用传统的固相法合成了Sm2O3掺杂的Bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5-xSmxZn0.5)(Zn0.5Nb1.5)O7(0≤x≤0.6,BSZN),通过XRD、AV2782阻抗分析仪等测试手段对其烧结行为、相结构及介电性能进行了系统研究.结果表明纯BZN陶瓷的结构为立方焦绿石单相;当Sm2O3掺杂量较少(0＜x≤0.5)时,样品的相结构仍然保持立方焦绿石单相;随着Sm2O3掺杂量的进一步增加(x≥0.6),样品出现其它相.同时,试样的介电性能随结构的变化而呈现有规律的变化.     

溶胶–凝胶法制备(Na0.50+xK0.50-2xLix)Nb0.9Ta0.1O3无铅压电陶瓷及其性能

采用溶胶–凝胶法制备Li+取代(K0.5Na0.5)+及Ta5+取代Nb5+的(K0.5Na0.5)NbO3陶瓷粉体,采用无压烧结工艺制备(Na0.50+xK0.50–2xLix)Nb0.9Ta0.1O3(x=0,0.02,0.04)陶瓷样品。研究了前驱体煅烧温度对陶瓷粉体物相组成的影响。分析了不同Li+掺杂量对样品物相组成、微观结构、体积密度及电学性能的影响。结果表明:前驱体的最佳煅烧温度为600℃,通过透射电子显微镜分析陶瓷粉体的粒径为49 nm;不同Li+掺杂量制备的(Na0.50+xK0.50–2xLix)Nb0.9Ta0.1O3陶瓷样品均为正交相钙钛矿结构;随着Li+掺杂量的增加,(Na0.50+xK0.50–2xLix)Nb0.9Ta0.1O3陶瓷的体积密度先增大后减小,介电常数逐渐升高,压电常数先降低再升高,剩余极化强度逐渐升高。Li+掺杂量x为0.04时样品的压电常数(d33=94 pC/N)、相对介电常数(εr=684.33)及剩余极化强度(Pr=98.27μC/cm2)较好。     

添加ZrO_2对Ta_2O_5陶瓷结构与性能的影响

以ZrO2和Ta2O5粉体为原料,采用固相反应法制备了ZrO2掺杂Ta2O5陶瓷。研究了ZrO2掺杂对Ta2O5陶瓷的相组成、微观结构、抗弯强度、热膨胀系数和抗热震性能的影响。结果表明:ZrO2掺杂可在烧成过程中抑制β-Ta2O5相向α-Ta2O5相的转变,5%(质量分数,下同)ZrO2掺杂Ta2O5陶瓷为β-Ta2O5单相固溶体。3%ZrO2掺杂,显著抑制了Ta2O5陶瓷高温烧结过程中的晶粒长大,避免了晶界开裂;掺杂量达到5%以上时,可显著促进Ta2O5陶瓷的烧结致密化。5%ZrO2掺杂的Ta2O5陶瓷表现出较高的抗弯强度(74.5MPa),低的热膨胀系数(1.96×10-6/℃)和良好的抗热震性能。     

Bi_2O_3掺杂对PBSZT压电-铁电陶瓷结构和特性的影响

采用扎膜工艺和固相反应法制备了Bi2O3掺杂的(Pb0.70Ba0.26Sr0.04)(Zr0.52Ti0.48)O3–xBi2O3(Bi–PBSZT,x=0,0.1%(质量分数,下同),0.3%,0.5%,0.8%,1.0%)压电–铁电陶瓷。通过扫描电镜和X射线衍射表征Bi–PBSZT陶瓷的结构和物相组成,并对其弯曲强度(σb)、相对介电常数(εr)和横向压电应变常数(d31)进行了检测和分析。结果表明:适量Bi2O3(x=0～0.3%)掺杂可使Bi–PBSZT陶瓷晶粒细化,致密度提高,σb增大;陶瓷的εr和d31下降。当Bi2O3掺杂量为0.3%时,Bi–PBSZT陶瓷的性能得到优化,σb为175.21MPa,εr为5520,d31为518×10–12m/V。     

Preparation and Properties of （Na0.50＋xK0.50-2xLix）Nb0.9Ta0.1O3 Lead-Free Piezoelectric Ceramics by Sol-Gel Method

采用溶胶–凝胶法制备Li＋取代（K0.5Na0.5）＋及Ta5＋取代Nb5＋的（K0.5Na0.5）NbO3陶瓷粉体,采用无压烧结工艺制备（Na0.50＋xK0.50–2xLix）Nb0.9Ta0.1O3（x=0,0.02,0.04）陶瓷样品。研究了前驱体煅烧温度对陶瓷粉体物相组成的影响。分析了不同Li＋掺杂量对样品物相组成、微观结构、体积密度及电学性能的影响。结果表明：前驱体的最佳煅烧温度为600℃,通过透射电子显微镜分析陶瓷粉体的粒径为49nm;不同Li＋掺杂量制备的（Na0.50＋xK0.50–2xLix）Nb0.9Ta0.1O3陶瓷样品均为正交相钙钛矿结构;随着Li＋掺杂量的增加,（Na0.50＋xK0.50–2xLix）Nb0.9Ta0.1O3陶瓷的体积密度先增大后减小,介电常数逐渐升高,压电常数先降低再升高,剩余极化强度逐渐升高。Li＋掺杂量x为0.04时样品的压电常数（d33=94pC/N）、相对介电常数（εr=684.33）及剩余极化强度（Pr=98.27μC/cm2）较好。     

Er^(3+)掺杂对立方焦绿石陶瓷结构与介电性能的影响EI北大核心CSCD

采用固相反应法制备(Bi1.5–x Erx Zn0.5)(Zn0.5Nb1.5)O7(BEZN,x=0、0.05、0.10、0.15、0.20、0.25、0.30)陶瓷,研究了Er3+替代Bi3+对(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(BZN)陶瓷结构与介电性能的影响。结果表明:当Er3+掺杂量x<0.15 mol时,样品为单一α-BZN相;当x≥0.15 mol时,出现第二相。用分子动力学计算Er3+分别进入A、B位的溶解能结果可知,此时Er3+可能已进入B位。随Er3+掺杂量增加,Er3+进入晶格,BEZN陶瓷密度从6.999 g/cm3减小到6.680 g/cm3,有明显细化晶粒作用。一定频率(1 MHz)条件下,峰值介电常数随Er3+掺杂量增加而减小,弛豫峰温度范围介电常数变化量Δε逐渐减小,即弛豫峰逐渐宽化和平坦。     

稀土掺杂Al_2TiO_5–TiO_2–SiO_2多相泡沫陶瓷的制备与性能

用有机先驱体浸渍法制备了CeO2和Er2O3等稀土掺杂的Al2TiO5–TiO2–SiO2多相泡沫陶瓷。研究了CeO2和Er2O3等稀土掺杂对Al2TiO5–TiO2–SiO2多相泡沫陶瓷力学性能的影响。结果表明:CeO2和Er2O3掺杂可以显著增强Al2TiO5–TiO2–SiO2多相泡沫陶瓷的抗弯强度,在1250℃,以质量分数为0.5?O2 0.5%Er2O3掺杂,陶瓷样品的抗弯强度最佳,达到177.4MPa;在50～1000℃,热膨胀系数为5.2×10–6/℃,显气孔率超过76%。     

添加Ta_2O_5对锂铌钛系微波介质陶瓷性能的影响

添加Ta2O5对LiNb0.6-zTazTi0.5O3陶瓷进行改性研究,文中探讨了Ta2O5对LiNb0.6-zTazTi0.5O3陶瓷烧结性能,显微结构和微波介电性能的影响。结果表明:添加Ta2O5样品的εr略微降低、Q.f值提高、τf略微增大,LiNb0.4Ta0.2Ti0.5O3配方在1160℃保温2h制得样品的微波介电性能非常良好,εr=63.5、τf=+25 ppm/℃、Q.f=7490GHz。     

CuO和V2O5掺杂对ZnNb2O6陶瓷介电性能的影响

采用传统的固相反应法制备了CuO和V2O5掺杂的ZnNb2O6介质陶瓷.通过X射线衍射,扫描电镜以及电感-电容-电阻测试仪等测试手段对其烧结特性,晶体结构,微观形貌和介电性能进行研究.结果表明:CuO和V2O5掺杂能降低ZnNb2O6陶瓷的烧结温度,影响相结构,改变微观形貌并优化介电性能.掺杂质量分数为0.25%CuO和0.25%V2O5的ZnNb2O6陶瓷样品在1 025℃烧结后,在100 MHz下具有较好的综合介电性能:介电常数εr=35,介电损耗tanδ=0.000 21,频率温度系数τf=-44.41×10-6/℃.     

掺杂V2O5对MgNb2O6介电陶瓷工艺和性能的影响

本文采用固相反应法常压烧结制备MgNb2O6粉末,研究了添加不同质量分数的V2O5对MgNb2O6微波介电陶瓷的烧结工艺和介电性能的影响。并运用XRD、SEM和LCR对试样显微组织和性能进行了分析。结果表明:添加一定量的V2O5能够有效地降低MgNb2O6介电陶瓷的烧结温度,提高试样的致密度、频率温度系数及介电常数。当V2O5添加量为1.0wt%,且在1175℃烧结条件下获得的MgNb2O6陶瓷性能最佳,其性能参数分别为:εr=28,tanδ=0.00361,τf=54.64ppm·℃-1。     

Co-effects of Nb2O5 and stoichiometric deviations on the microwave dielectric properties of Y3Al5O12

Four control experiments (S1: Y₃Al₅O₁₂, S2: Y₃Al₅O₁₂+1 wt%Nb₂O₅, S3: Y₃Al_4.955Nb_0.045O₁₂, S4: Y_2.955Al₅Nb_0.045O₁₂) were designed to investigate the co-effects of Nb₂O₅ and non-stoichiometry on the microwave dielectric properties of Y₃Al₅O₁₂. The beneficial results of Nb₂O₅ doping are demonstrated based on X-ray patterns, electron diffraction information, Rietveld refinement, and micromorphological characterization. Differences in dielectric properties were explored using lattice defects, ion polarizability, bond valence, and Raman spectroscopy. In contrast, the Y-deficient sample (S4) possesses the best dielectric properties (ε_r ～ 10.37, Q × f ～ 161,724 GHz and τ_f ～ -33.8 ppm/°C).     

BaCu（B2O5）助烧剂对CaO-Li2O-Sm2O3-TiO2微波介质陶瓷介电性能的影响

16CaO-9Li2O-12Sm2O3-63TiO2(CLST)陶瓷的烧结温度接近1 300℃,添加BaCu(B2O5)(BCB)陶瓷粉体使CLST陶瓷的烧结温度降至1050℃.随着烧结温度的升高,样品的体积密度先升高而后趋于稳定,添加质量分数为4?B的CLST陶瓷在1 050℃烧结后得到96%的相对密度.相对介电常数(εr)随着BCB添加量的增大先增大后略有减小.由于液相的存在,介电损耗(tanoδ随着BCB添加量的增大而增大.谐振频率温度系数(tf)与纯CLST陶瓷相比更加近零.添加质量分数为4?B的CLST陶瓷在1 050℃烧结2h后得到良好的介电性能:εr=81,tanδ=0.021,tf=0.5×10-6/℃(1MHz).     

Synthesis of a low-firing BaSi2O5 microwave dielectric ceramics with low dielectric constant

In this study, BaSi₂O₅ ceramics with an orthorhombic structure were synthesized by using a traditional solid-state method at a low temperature by doping with Li₂O–B₂O₃–CaO–CuO (LBCC) glass. The phase composition, mechanism of low-temperature sintering, microwave dielectric properties, and changes in the mesophase during the heating of low-temperature sintered BaSi₂O₅ ceramics were examined by performing an X-ray diffraction analysis. A compact matrix of BaSi₂O₅ can be wetted by the liquid phase of the formed LBCC glass. Therefore, LBCC glass with different doping percentages can effectively reduce the sintering temperature of BaSi₂O₅. The microwave dielectric properties of BaSi₂O₅ ceramics sintered at 900 °C at 4 wt% of LBCC glass were determined: ε_r = 7.32, Q × f = 19,002 GHz, and τ_f = ?35.8 ppm/°C. The chemical compatibility of the samples with Ag was studied at 4 wt% doping with LBCC glass, and the samples were fired for 4 h at 900 °C.     

Zn含量高的Nb2O5-ZnO-Bi2O3系高频介质陶瓷

研究Ｚｎ含量高的Ｎｂ２Ｏ５－ＺｎＯ－Ｂｉ２Ｏ３系高频介质陶瓷,实验结果表明,组成的特征为混合多相结构,除了主晶相为立方焦绿石相之外,随组成变化,尚能生成ＺｎＯ,ＺｎＮｂ２Ｏ６,Ｚｎ３Ｎｂ２Ｏ８,ＢｉＮｂＯ４等相,立方焦绿石相具有高的εＺｒＯ相约出现降低ε及增大ｔａｎδ而ＺｎＮｂ２６,ＢｉＮｂＯ４等相的出现使ε,ｔａｎδ同时降低,并改善电容温度系数。     

Preparation and characterizations of tantalum pentoxide (Ta2O5) nanoparticles and UV‐curable Ta2O5‐acrylic nanocomposites

Tantalum pentoxide (Ta₂O₅) nanoparticles with the sizes in the range of 20–50 nm were prepared via a chemical route in which the oleic acid (OLEA) was adopted as the surfactant for the synthesis process. X‐ray diffraction (XRD) revealed the as‐synthesized Ta₂O₅ transforms from amorphous to hexagonal and orthorhombic structures at the temperatures of 700°C and 750°C, respectively, illustrating the suppression of recrystallization temperature of Ta₂O₅ due to the particle size reduction. UV‐curable nanocomposites containing the Ta₂O₅ nanoparticles and acrylic matrix were also prepared. Thermogravimetry analysis (TGA) found an about 10–20°C improvement on the 5% weight‐loss thermal decomposition temperatures (T_ds). Dielectric measurement showed that the dielectric constant of nanocomposite increases with the increase in the filler loading without severe deterioration of dielectric loss. The increment of dielectric constants was ascribed to the addition of high‐dielectric inorganic fillers as well as the presence of interfacial polarization at the organic/inorganic interfaces. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010     

Synthesis and microwave dielectric properties of BaO-Sm2O3-5TiO2 ceramics with NdAlO3 additions

BaO-Sm₂O₃-5TiO₂ (BST5) ceramics with NdAlO₃ additions of up to 15 wt% were produced with a solid state reaction method, and their structural and microwave dielectric properties were determined. Experimental results showed that NdAlO₃ neither merged nor altered the orthorhombic tungsten bronze structure of the main phase of the produced ceramics (except for a shrinkage in the crystal lattice), but it was segregated in distinct grains in the microstructure of the produced ceramics. However, the amount of NdAlO₃ strongly influenced the densification and the microstructure (i.e. grain shape and size) of the produced ceramics. Analysis of the experimental results suggests that the microstructural features can be correlated to the dielectric properties of these ceramics. Accordingly, the dielectric constant (ε_r) and the temperature coefficient of resonant frequency (τ_f) of the produced BLT5 ceramics can be tuned with the amount of NdAlO₃ additions and the sintering process parameters. The best dielectric properties were achieved for BaO-Sm₂O₃-5TiO₂ ceramics with 7.5% NdAlO₃ (ε_r=73.22, Q×f =10,300 GHz, and τ_f=−1.05 ppm/°C).