Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application

The model explaining an enhanced collected charge in detectors irradiated to 10¹⁵-10¹⁶ n_eq/cm² is developed. This effect was first revealed in heavily irradiated n-on-p detectors operated at high bias voltage ranging from 900 to 1700 V. The model is based on the fundamental effect of carrier avalanche multiplication in the space charge region and in our case is extended with a consideration of p-n junctions with a high concentration of the deep levels. It is shown that the efficient trapping of free carriers from the bulk generation current to the deep levels of radiation induced defects leads to the stabilization of the irradiated detector operation in avalanche multiplication mode due to the reduction of the electric field at the junction. The charge collection efficiency and the detector reverse current dependences on the applied bias have been numerically simulated in this study and they well correlate to the recent experimental results of CERN RD50 collaboration. The developed model of enhanced collected charge predicts a controllable operation of heavily irradiated detectors that is promising for the detector application in the upcoming experiments in a high luminosity collider.     

Comparative measurements of highly irradiated n-in-p and p-in-n 3D silicon strip detectors

Silicon detectors in 3D technology are a candidate for applications in environments requiring an extreme radiation hardness, as in the innermost layers of the detectors at the proposed High-Luminosity LHC. In 3D detectors, the electrodes are made of columns etched into the silicon perpendicular to the surface. This leads to higher electric fields, a smaller depletion voltage and a reduced trapping probability of the charge carriers compared to standard planar detectors. In this article, the signal and the noise of irradiated n-in-p and p-in-n 3D silicon strip detectors are compared. The devices under test have been irradiated up to a fluence of 2×10¹⁶ 1 MeV neutron equivalent particles per square centimetre (n_eq/cm²), which corresponds to the fluence expected for the inner pixel detector layers at the High-Luminosity LHC. A relative charge collection efficiency of approximately 70% was obtained even after the highest irradiation fluence with both detector types. The influence of different temperatures on the signal and the noise is investigated and results of annealing measurements are reported.     

Simulation studies of the nn Si sensors having p-spray/p-stop implant for the SiD experiment

Silicon Detector (SiD) is one of the proposed detectors for the future International Linear Collider (ILC). In the innermost vertex of the ILC, Si micro-strip sensors will be exposed to the neutron background of around 1-1.6×10¹⁰ 1 MeV equivalent neutrons cm⁻² year⁻¹. The p⁺n⁻n⁺ double-sided Si strip sensors are supposed to be used as position sensitive sensors for SiD. The shortening due to electron accumulation on the n⁺n⁻ side of these sensors leads to uniform spreading of signal over all the n⁺ strips and thus ensuring good isolation between the n⁺ strips becomes one of the major issues in these sensors. One of the possible solutions is the use of floating p-type implants introduced between the n⁺ strips (p-stops) and another alternative is the use of uniform layer of p-type implant on the entire n-side (p-spray). However, pre-breakdown micro-discharge is reported because of the high electric field at the edge of the p-stop/p-spray. An optimization of the implant dose profile of the p-stop and p-spray is required to achieve good electrical isolation while ensuring satisfactory breakdown performance of the Si sensors. Preliminary results of the simulation study performed on the n⁺n⁻ Si sensors having p-stop and p-spray using device simulation program, ATLAS, are presented.     

Characterization of electron irradiated GaN n-p diode

Electron-beam irradiated GaN n⁺-p diodes were characterized by deep level transient spectroscopy (DLTS) and optical responsivity measurements. The GaN n⁺-p diode structures were grown by metal organic chemical vapor deposition technique, and the electron irradiation was done by the energies of 1 MeV and 2 MeV with dose of 1 × 10¹⁶ cm^− 2. In DLTS measurement, the defect states of E_c − 0.36 eV and E_c − 0.44 eV in the electron irradiated diodes appeared newly. The optical responsivity of GaN n⁺-p diode was characterized in ultra-violet region, and then the maximum optical responsivity at 350 nm was decreased after electron-beam irradiation.     

100 keV nitrogen ion beam implanted polycarbonate: A possibility for UV blocking devices

Polycarbonate samples were implanted with 100 keV N⁺ ions at fluences 10¹⁵, 10¹⁶ and 5 × 10¹⁶ ions cm⁻². Drastic alterations in UV-Visible transmittance spectra were observed which are interrelated with change in surface color and optical absorption of the implanted samples. UV-Visible transmission studies show that at ion fluence of 10¹⁶ ions cm⁻², transmission approaches to zero at about λ = 427 nm and below up to 200 nm. Optical band gap (E_OPT) reduces with increase in fluence and at maximum ion fluence of 5 × 10¹⁶ N⁺ cm⁻², E_OPT was determined to be 1.56 eV whereas for pristine its value was 3.00 eV. Raman analysis indicates the formation of amorphous carbon on the surface of polycarbonate at an ion fluence of 10¹⁶ N⁺ cm⁻². Rise in fluence to 5 × 10¹⁶ N⁺ cm⁻² results in enhancement in disorder on the surface of the host polymer. Modifications in the structural arrangements were found to be in strong association with changes in optical properties with increase in ion fluence and the same is discussed.     

Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors

We established fabrication methods for high-quality Ge n⁺/p and p⁺/n junctions using thermal diffusion of P and implantation of B, respectively. The carrier concentrations in n⁺ and p⁺ layers were as high as 4 × 10¹⁹ and 2 × 10¹⁹ cm^− 3, respectively. It was found that a peripheral surface-state current dominates the reverse leakage current in an n⁺/p junction diode. The protection of junction surfaces from plasma damage during the SiO₂ deposition was essential to achieve high-quality source/drain junctions. The surface passivation with a GeO₂ interlayer was harmful to an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) because of an increase in a surface leakage current due to inversion carriers. For a p-channel MOSFET, on the other hand, the GeO₂ interlayer plays a role in decreasing the surface leakage current.     

Beryllium neutron activation detector for pulsed DD fusion sources

A compact fast neutron detector based on beryllium activation has been developed to perform accurate neutron fluence measurements on pulsed DD fusion sources. It is especially well suited to moderate repetition-rate (<0.2 Hz) devices, such as the plasma focus or Z-pinch. The detector comprises a beryllium metal sheet sandwiched between two large-area xenon-filled proportional counters. A methodology for calculating the absolute response function of the detector using a “first principles” approach is described. This calibration methodology is based on the ⁹Be(n,α)⁶He cross-section, energy calibration of the proportional counters, and numerical simulations of neutron interactions and beta-particle paths using MCNP5. The response function R(E_n) is determined over the neutron energy range 2-4 MeV. The count rate capability of the detector has been studied and the corrections required for high neutron fluence measurements are discussed. For pulsed DD neutron fluencies >3×10⁴ cm⁻², the statistical uncertainty in the fluence measurement is better than 1%. A small plasma focus device has been employed as a pulsed neutron source to test two of these new detectors, and their responses are found to be practically identical. Also the level of interfering activation is found to be sufficiently low as to be negligible.     

Photoconductive properties of organic-inorganic hybrid perovskite (C6H13NH3)2(CH3NH3)m − 1PbmI3m + 1:TiO2 nanocomposites device structure

Photoconductive devices, with remarkable photoconductive performance, of fluorine doped tin oxide/TiO₂/(C₆H₁₃NH₃)₂(CH₃NH₃)_m − 1Pb_mI_3m + 1 (m = 1, 2):TiO₂/Pt were fabricated. An electron injection mechanism from the (C₆H₁₃NH₃)₂(CH₃NH₃)_m − 1Pb_mI_3m + 1 (m = 1, 2) to TiO₂ was proposed for the photoconductive effects, where organic-inorganic hybrid perovskite (C₆H₁₃NH₃)₂(CH₃NH₃)_m − 1Pb_mI_3m + 1 (m = 1, 2), self-organized into mesoscopic TiO₂ films from solution directly, served as the electron donor. The photoconductive performance of the devices can be adjusted by the inorganic sheet thickness (tuned by m) of the hybrid perovskite. The photocurrent value increased as m value increased at the same illumination. Further, when bias voltage was 1.0 V, the ratio of photocurrent and dark current for (C₆H₁₃NH₃)₂(CH₃NH₃)_2⁻ Pb₂I₇:TiO₂ reached as high as 7.05 × 10³. The devices could be potentially used as light detectors and light-controlled switch.     

Influence of electron irradiation on characteristics of Si1−xGex p-n-structures

Electrically active defects induced by irradiation with 4 MeV electrons and their influence on dynamic and static parameters of p-n-structures with bases on boron doped Si_1−xGe_x alloys (0<x?0.06) have been investigated. It has been found that after irradiation with the electron fluence Φ=2×10¹⁴ cm⁻² lifetime of minority charge carriers decreases more than 12 times and forward voltage increases twice. Deep level transient spectroscopy (DLTS) studies have shown that interstitial carbon atoms are dominant electrically active defects induced by the irradiation. These defects are transformed into the complexes “interstitial carbon—interstitial oxygen” upon annealing of irradiated samples in the temperature range 50-100 °C.     

p-type doping of ZnO by means of high-density inductively coupled plasmas

A custom-designed inductively coupled plasma assisted radio-frequency magnetron sputtering deposition system has been used to fabricate N-doped p-type ZnO (ZnO:N) thin films on glass substrates from a sintered ZnO target in a reactive Ar + N₂ gas mixture. X-ray diffraction and scanning electron microscopy analyses show that the ZnO:N films feature a hexagonal crystal structure with a preferential (002) crystallographic orientation and grow as vertical columnar structures. Hall effect and X-ray photoelectron spectroscopy analyses show that N-doped ZnO thin films are p-type with a hole concentration of 3.32 × 10¹⁸ cm^− 3 and mobility of 1.31 cm² V^− 1 s^− 1. The current-voltage measurement of the two-layer structured ZnO p-n homojunction clearly reveals the rectifying ability of the p-n junction. The achievement of p-type ZnO:N thin films is attributed to the high dissociation ability of the high-density inductively coupled plasma source and effective plasma-surface interactions during the growth process.     

KxNa1 − xNbO3 powder synthesized by molten-salt process

K_xNa_1 − xNbO₃ ceramic powders have been successfully synthesized in different salts (NaCl, KCl, NaCl-KCl). Our results reveal that K_xNa_1 − xNbO₃ powders with single-phase perovskite structure can be formed at a low temperature such as 750 °C. The type of salts has significant effects on the morphology and chemical composition of the powders. As Na⁺ has a higher diffusing rate and occupies the A-site in the perovskite structure more easily as compared to K⁺, the powder contains only a small amount of K⁺ (x ∼ 0.10) when it is synthesized according to formula K_0.5Na_0.5NbO₃ and in a flux containing the same molar content of Na⁺ and K⁺. By using a NaCl or KCl salt, the K⁺ concentration x can be adjusted to almost 0 and 0.77, respectively.     

Study of SHI induced recrystallization effects in SOI structures synthesized by nitrogen and oxygen ion implantation in silicon

Silicon oxynitride (Si_xO_yN_z) buried insulating layers were synthesized by implantation of nitrogen (¹⁴N⁺) and oxygen (¹⁶O⁺) ions sequentially in the ratio 1:1 at 150 keV to ion-fluences ranging from 1 × 10¹⁷ to 5 × 10¹⁷ cm⁻² to prepare silicon on insulator (SOI) structures. The as implanted samples were held at 270 °C and irradiated to total fluence of 1 × 10¹⁴ cm⁻² by 60 MeV Ni⁺⁵ to study the structural changes/recrystallization of SOI structures induced by swift heavy ion (SHI) irradiation. Fourier transform infrared (FTIR) measurements on the as implanted samples (≤1 × 10¹⁸ cm⁻²) show a single absorption band in the wavenumber range 1300-750 cm⁻¹ attributed to the formation of silicon oxynitride (Si-O-N) bonds in the implanted silicon. It is observed that a nitrogen rich silicon oxynitride structure is formed after SHI irradiation. The study of X-ray rocking curves on the samples show the formation of small silicon crystallites due to swift heavy ion irradiation.     

Ohmic contacts and n-type doping on TixCr2 − xO3 films and the temperature dependence of their transport properties

A procedure to dope n-type Cr_2 − xTi_xO₃ thin films is proposed. Besides doping the material, at the same time the method forms ohmic contacts on Ti_xCr_2 − xO₃ films. It consists on the deposition of 10 nm Ti and 50 nm Au, followed by thermal annealing at 1000 °C for 20 min in N₂ atmosphere. Ohmic contacts were formed on three samples with different composition: x = 0.17, 0.41 and 1.07 in a van der Pauw geometry for Hall effect measurements. These measurements are done between 35 K and 373 K. All samples showed n-type nature, with a charge carrier density (n) on the order of 10²⁰ cm^− 3, decreasing as x increased. As a function of temperature, n shows a minimum around 150 K, while the mobilities have an almost constant value of 11, 28 and 7 cm²V^− 1 s^− 1 for x = 0.17, 0.41 and 1.07, respectively.     

Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC

Wide band gap InGaZn₆O₉ films of thickness ~ 350 nm were deposited on sapphire (0001) at room temperature by using the pulsed laser deposition technique. The transparent films showed the optical transmission of > 80% with the room temperature Hall mobility of ~ 10 cm²/V s and conductivity of 4 × 10² S/cm at a carrier density > 10²⁰ cm^− 3. The electrical properties as a function of deposition temperatures revealed that the conductivity and mobility almost retained up to the deposition temperature of 200 °C. The films annealed in different atmospheres suggested oxygen vacancy plays an important role in determining the electrical conductivity of the compound. Room temperature grown heterostructure of n-InGaZn₆O₉/p-SiC showed a good rectifying behavior with a leakage current density of less than 10^− 9 A/cm², current rectifying ratio of 10⁵ with a forward turn on voltage ~ 3 V, and a breakdown voltage greater than 32 V.     

Nanocluster evolution in Ge ion implanted Ta2O5 layers

Ion implantation-induced nanoclusters were synthesized in reactive sputtered Ta₂O₅ films by Ge⁺ implantation and subsequent annealing. The effects of ion fluence and post-implantation thermal treatment on the kinetics of the nanoclustering were investigated. Ge⁺ ions with energy of 40 keV and fluences of 5 × 10¹⁵, 1 × 10¹⁶ and 5 × 10¹⁶ cm^− 2 were implanted in the Ta₂O₅ layers at room temperature. The samples were thermally treated by rapid thermal annealing in vacuum at 700 °C and 1000 °C for 30, 60 and 180 s. Structural studies of all samples were done by Cross-sectional Transmission Electron Microscopy in diffraction and phase contrast mode. Under optimized conditions (high implantation fluence, subsequent annealing) nanoclusters are formed around the projected ion range of the implanted Ge⁺ ions. The structure of the implanted Ta₂O₅ matrix changes from amorphous to orthorhombic when the annealing was performed at 1000 °C. Although the Ta₂O₅ matrix crystallizes, no evidence is obtained for crystallization of the embedded nanoclusters even after annealing at 1000 °C.     

A PEG assisted sol-gel synthesis of LiFePO4 as cathodic material for lithium ion cells

In order to obtain fine-particle LiFePO₄ with excellent electrochemical performance, LiFePO₄/C powders were synthesized by a poly(ethylene glycol) (PEG) assisted sol-gel method. All samples were characterized by X-ray powder diffraction and scanning electron microscopy, and their electrochemical properties were investigated by cycle voltammograms and charge-discharge tests. The sample, synthesized with the n_PEG/n_LFP = 1:1 under sintering temperature of 600 °C, possesses the global morphology and particle size of about 100 nm. This sample delivers the first discharge capacity of 162 mAh g⁻¹, i.e. 95.3% of the theoretical capacity, at the 15 mA g⁻¹ discharge current between 2.5 and 4.0 V (versus Li/Li⁺). The sample also displays a robust rate capability and stable cycle-life. The improved electrochemical performance originates mainly from the fine particle of nanometric dimension, regular global morphology and uniform dispersing in the product as well as the increased electronic conductivity by carbon coating.     

Synthesis and electrochemical properties of Ti doped Li3 − xFe2 − xTix(PO4)3/C cathode materials

Li_3 − xFe_2 − xTi_x(PO₄)₃/C (x = 0-0.4) cathodes designed with Fe doped by Ti was studied. Both Li₃Fe₂(PO₄)₃/C (x = 0) and Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C (x = 0.2) possess two plateau potentials of Fe³⁺/Fe²⁺ couple (around 2.8 V and 2.7 V vs. Li⁺/Li) upon discharge observed from galvanostatic charge/discharge and cyclic voltammetry. Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C has higher reversibility and better capacity retention than that of the undoped Li₃Fe₂(PO₄)₃/C. A much higher specific capacity of 122.3 mAh/g was obtained at C/20 in the first cycle, approaching the theoretical capacity of 128 mAh/g, and a capacity of 100.1 mAh/g was held at C/2 after the 20th cycle.     

Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

We have successfully grown 360-nm-thick undoped n-BaSi₂ epitaxial layers on the n⁺-BaSi₂/p⁺-Si(111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500 nm under a reverse bias voltage of 4 V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi₂ epitaxial layers on a p-Si(111) substrate.     

Synthesis and characterization of Ni1−xZnxFe2O4 spinel ferrites from tailored layered double hydroxide precursors

In this paper, a series of pure Ni_1 − xZn_xFe₂O₄ (0 ≤ x ≤ 1) spinel ferrites have been synthesized successfully using a novel route through calcination of tailored hydrotalcite-like layered double hydroxide molecular precursors of the type [(Ni + Zn)_{1 − x − y}Fe_y²⁺Fe_x³⁺(OH)₂]^x+(SO₄²⁻)_x/2·mH₂O at 900 °C for 2 h, in which the molar ratio of (Ni²⁺ + Zn²⁺)/(Fe²⁺ + Fe³⁺) was adjusted to the same value as that in single spinel ferrite itself. The physico-chemical characteristics of the LDHs and their resulting calcined products were investigated by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Mössbauer spectroscopy. The results indicate that calcination of the as-synthesized LDH precursor affords a pure single Ni_1 − xZn_xFe₂O₄ (0 ≤ x ≤ 1) spinel ferrite phase. Moreover, formation of pure ferrites starting from LDHs precursors requires a much lower temperature and shorter time, leading to a lower chance of side-reactions occurring, because all metal cations on the brucite-like layers of LDHs can be uniformly distributed at an atomic level.     

Magnetocaloric properties in Ln0.67Ba0.33Mn1 − xFexO3 (Ln = La or Pr) manganites

We have investigated the magnetocaloric properties of Ln_0.67Ba_0.33Mn_1 − xFe_xO₃ (Ln = La or Pr) manganites with x = 0 and 0.05. All compounds present a maximum and large magnetocaloric effect near the Curie temperature (T_C). The associated maximum value of the magnetic entropy change, at 5 T applied change in the magnetic field, is 4.37 J.kg^− 1.K^− 1 for Pr_0.67Ba_0.33MnO₃ manganite with a T_C value of 205 K. The corresponding relative cooling power (RCP) reaches 230 J.kg^− 1. All the samples present similar RCP values that are relatively high and are promising materials to be used in ecologically friendly magnetic refrigeration technology. Iron doping reduces both T_C and ΔS_M^max and spreads the temperature working range with an almost constant RCP and can then be used to tune the working conditions of a refrigerator device.