Deformation behavior and the Portevin-Le Chatelier effect in a modified 18Cr-8Ni stainless steel

Mechanical behavior and microstructural evolution of a 2.5%W + 0.4%Nb + 0.3%V + 0.17%N modified 18Cr-8Ni austenitic steel was studied in the temperature interval 410-740 °C at initial strain rates ranging from 6.7 × 10⁻⁶ to 1.3 × 10⁻² s⁻¹. The Portevin-Le Chatelier (PLC) effect attributed to dynamic strain aging (DSA) was found to occur in the temperature range 530-680 °C. The PLC effect is manifested in the form of serrated (jerky) flow and planar slip. DSA increases yield strength, σ_0.2, and ultimate tensile strength, σ_UTS, in comparison with conventional SUS304 steel due to the additional alloying that provides the formations of the clouds of solutes around the dislocations that exert the solute drag force.     

Synthesis and Li ion conductivity of Li2O-Nb2O5-P2O5 glasses and glass-ceramics

Glasses with the compositions of xLi₂O-(70 − x)Nb₂O₅-30P₂O₅, x = 30-60, and their glass-ceramics are synthesized using a conventional melt-quenching method and heat treatments in an electric furnace, and Li⁺ ion conductivities of glasses and glass-ceramics are examined to clarify whether the glasses and glass-ceramics prepared have a potential as Li⁺ conductive electrolytes or not. The electrical conductivity (σ) of the glasses increases monotonously with increasing Li₂O content, and the glass of 60Li₂O-10Nb₂O₅-30P₂O₅ shows the value of σ = 2.35 × 10⁻⁶ S/cm at room temperature and the activation energy (E_a) of 0.48 eV for Li⁺ ion mobility in the temperature range of 25-200 °C. It is found that two kinds of the crystalline phases of Li₃PO₄ and NbPO₅ are formed in the crystallization of the glasses and the crystallization results in the decrease in Li⁺ ion conductivity in all samples, indicating that any high Li⁺ ion conducting crystalline phases have not been formed in the present glasses. 60Li₂O-10Nb₂O₅-30P₂O₅ glass shows a bulk nanocrystallization (Li₃PO₄ nanocrystals with a diameter of ∼70 nm) and the glass-ceramic obtained by a heat treatment at 544 °C for 3 h in air exhibits the values of σ = 1.23 × 10⁻⁷ S/cm at room temperature and E_a = 0.49 eV.     

Impurity induced band-gap narrowing in p-type CuIn1 − xGax(S,Se)2

Green's functions modelling of the impurity induced effects in p-type CuIn_1 − xGa_xS₂ and CuIn_1 − xGa_xSe₂ (x = 0.0, 0.5, and 1.0) reveals that: (i) the critical active acceptor concentration for the metal non-metal transition occurs at N_c ≈ 10¹⁷-10¹⁸ cm^− 3 for impurities with ionization energy of E_A ≈ 30-60 meV. (ii) For acceptor concentrations N_A > N_c, the hole gas of the metallic phase affects the band-edge energies and narrows the energy gap E_g = E_g⁰ − ΔE_g. The energy shift of the valence-band maximum ΔE_v1 is roughly twice as large as the shift of the conduction-band minimum ΔE_c1. (iii) ΔE_v1 depends strongly on the non-parabolicity of the valence bands. (iv) Sulfur based compounds and Ga-rich alloys have the largest shifts of their band edges. (v) A high active acceptor concentrations of N_A = 10²⁰ cm^− 3 implies a band-gap narrowing in the order of ΔE_g ≈ 0.2 eV, thus E_g = E_g⁰ − 0.2 eV, and an optical band gap of E_g^opt ≈ E_g⁰ − 0.1 eV.     

Optical and electrical properties of vapour phase grown Zn1 − xCrxTe crystals

The optical and electrical properties of vapour phase grown crystals of diluted magnetic semiconductor Zn_1 − xCr_xTe were investigated for 0 ≤ x ≤ 0.005. The diffuse reflectance spectra exhibited an increase in the fundamental absorption edge (E₀) with composition x and were also dominated by a broad absorption band around 5200 cm^− 1 arising from ⁵T₂ → ⁵E transition. The ⁵T₂ and ⁵E levels originate from the crystal field splitting of the ⁵D free ion in the ground state. The electrical resistivity measurements revealed semiconducting behaviour of the samples with p-type conductivity in the temperature range of 200-450 K.     

Absorption and emission properties of Ho doped lead-zinc-borate glasses

This paper reports on the affect of lead content on the absorption and emission spectra of the Ho³⁺ ion doped lead-zinc-borate glasses in the composition (mol%) of (20 − x)PbO-20ZnO-(59 + x)B₂O₃-1.0Ho₂O₃ where x = 0, 5,10,15 of PbO content with λ_exc = 405 nm. The experimental absorption band energies have satisfactorily been correlated with the theoretical results with an r.m.s deviation of zero with the following correction factors obtained by a least square fit analysis: ΔE¹ = 348.495936 cm^− 1, ΔE² = 1.436043 cm^− 1, ΔE³ =  46.481575 cm^− 1, Δξ_4f = − 28.512979 cm^− 1, Δα = 55.508936 cm^− 1, Δβ = − 1394.339908 cm^− 1 and Δγ = 1208.424336 cm^− 1. By applying the Judd-Ofelt intensity parameter Ω₂ has been found to be linearly decreasing with the PbO content from 5 to 10 mol% and then increasing. And also radiative (A, A_T, β, τ_r) characteristic factors of the luminescent transitions (⁵I₈ ← ⁵F_3,4,5 and ⁵S₂) of the glasses have been evaluated. Stimulated emission cross-sections (σ_p^E) of the measured emission transitions of holmium glasses have also been computed.     

Fabrication of (K, Na)NbO3 glass-ceramics and crystal line patterning on glass surface

Crystallization behavior of (30−x)K₂O-xNa₂O-25Nb₂O₅-45SiO₂ (KNNS; x = 0, 5, 10, 20 and 30) (mol%) glasses was clarified and perovskite-type nonlinear optical (K, Na)NbO₃ (KNN) crystals were synthesized by using a conventional glass-ceramics method. It was found that Na₂O amounts over around x = 10 mol% were necessary to form perovskite-type KNN crystals showing second-harmonic generations. The substitution of K⁺ and Na⁺ ions was confirmed from X-ray diffraction (XRD) analysis. A continues-wave of Yb:YVO₄ fiber laser (wavelength: 1080 nm) was irradiated onto CuO doped KNNS; x = 10 (Cu-KNNS) surface. The absorption coefficient of this Cu-KNNS glass was determined to be α = 5.0 cm⁻¹. Perovskite-type KNN crystals were patterned in the condition of the laser power of >1.20 W and the laser scanning speed of S = 7 μm/s, and their structure was determined by Raman scattering spectra and XRD analysis.     

Study of flash evaporated CuIn1 − xGaxTe2 (x = 0, 0.5 and 1) thin films

CuIn_1 − xGa_xTe₂ thin films with x = 0, 0.5 and 1, have been prepared by flash evaporation technique. These semiconducting layers present a chalcopyrite structure. The optical measurements have been carried out in the wavelength range 200-3000 nm. The linear dependence of the lattice parameters as a function of Ga content obeying Vegard's law was observed. The films have high absorption coefficients (4 · 10⁴ cm^− 1) and optical band gaps ranging from 1.06 eV for CuInTe₂ to 1.21 eV for CuGaTe₂. The fundamental transition energies of the CuIn_1 − xGa_xTe₂ thin films can be fitted by a parabolic equation namely E_g1(x) = 1.06 + 0.237x − 0.082x². The second transition energies of the CuInTe₂ and CuGaTe₂ films were estimated to be: E_g2 = 1.21 eV and E_g2 = 1.39 eV respectively. This variation of the energy gap with x has allowed the achievement of absorber layers with large gaps.     

Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn2S4-CoIn2Se4

The system CoIn₂S_4xSe_4(1−x) has been investigated by X-ray powder methods on samples quenched at 700 °C. The spinel type phase has a phase width of 1≥x>0.9. A new layered compound is formed for 0.9>x>0.45 which crystallizes with the α-FeGa₂S₄-type with a=392.6 pm and c=1270.3 pm (x=0.5) for the hexagonal cell. Platelike crystals of the layered phase are obtained by transport reactions with iodine in a temperature gradient 750→700 °C. The band gaps of these crystals measured by optical absorption vary from 1.2 to 1.4 eV. The electrical conductivities of the crystals are found in the order of 10⁻⁵ Ω⁻¹ cm⁻¹.     

Preparation and mobile ion transport studies of Ta and Nb doped Li6Zr2O7 Li-fast ion conductors

Pure and doped Li_6−x(Zr_2−xM_x)O₇, M = Nb and Ta; x = 0, 0.15 compounds have been prepared by the urea combustion method followed by annealing at 950 °C for 8 h. The samples are characterized by X-ray diffraction and impedance spectroscopy. Ionic conductivities, σ_ionic, were determined in the temperature range of 60-360 °C by impedance spectroscopy. We observe that the Ta doped Li₆Zr₂O₇ has a measurable σ_ionic at ∼160 °C, and at 300 °C exhibits a conductivity value of 1 × 10⁻³ S/cm. The temperature dependence of the conductivity in the range 100-360 °C obeys an Arrhenius relation, yielding an activation energy of E_a = 0.95 eV (for M = Ta and x = 0.15).The bond valence approach has been used to visualise Li⁺ ion migration pathways and the conductivity mechanism in these compounds. The lowest energy pathway is found to extend along the [0 1 2] direction. The Bond valence analysis also indicates a significantly anisotropic Li-ion conductivity in compounds with Li₆Zr₂O₇ type structure, predicting activation energies of 1.1 and 0.9 eV for the low energy pathway in undoped and doped Li₆Zr₂O₇.     

Effect of the Mn ion on electrical and magnetic properties of orthorhombic perovskite-type Ca(Mn1−xTix)O3−δ

Orthorhombic perovskite-type Ca(Mn_1−xTi_x)O_3−δ (0 ≤ x ≤ 0.7) was synthesized at 1173 K for 12 h in a flow of oxygen from a precursor gel prepared using citric acid and ethylene glycol. The Mn³⁺ ion was generated by substituting a Ti⁴⁺ ion in CaMnO₃. The average particle size was 100-300 nm and did not depend on x. The lattice constants and the (Mn, Ti)-O distance increased linearly with increasing x. The variation in global instability index (GII) indicated that the instability of the structure increases monotonically with increasing x. Ca(Mn_1−xTi_x)O_3−δ was an n-type semiconductor that had its minimum values of electrical resistivity (ρ) and activation energy (E_a) at x = 0.1. Ca(Mn_1−xTi_x)O_3−δ (x = 0 and 0.1) exhibited a weak ferromagnetic behavior. The variation in μ_eff indicated that the spin state of the Mn³⁺ ion changes from low to high at x = 0.1, then reverts to low in the range of 0.2 ≤ x ≤ 0.7. The variations in ρ and E_a are explained by the number of electrons according to the change in the spin state of the Mn³⁺ ion.     

Thermal stability and transport studies of (100 − 2x)TeO2-xAg2O-xWO3 (7.5 ≤ x ≤ 30) glass system

Differential scanning calorimetry (DSC), infrared (IR) and direct current (DC) conductivity studies have been carried out on (100 − 2x)TeO₂-xAg₂O-xWO₃ (7.5 ≤ x ≤ 30) glass system. The IR studies show that the structure of glass network consists of [TeO₄], [TeO₃]/[TeO₃₊₁], [WO₄] units. Thermal properties such as the glass transition (T_g), onset crystallization (T_o), thermal stability (ΔT), glass transition width (ΔT_g), heat capacities in the glassy and liquid state (C_pg and C_pl), heat capacity change (ΔC_p) and ratios C_pl/C_pg of the glass systems were calculated. The highest thermal stability (237 °C) obtained in 55TeO₂-22.5Ag₂O-22.5WO₃ glass suggests that this new glass may be a potentially useful candidate material host for rare earth doped optical fibers. The DC conductivity of glasses was measured in temperature region 27-260 °C, the activation energy (E_act) values varied from 1.393 to 0.272 eV and for the temperature interval 170-260 °C, the values of conductivity (σ) of glasses varied from 8.79 × 10⁻⁹ to 1.47 × 10⁻⁶ S cm⁻¹.     

Influence of mixed alkalis on spectroscopic parameters of Sm, Dy doped chloroborate glasses

This article reports the effect of mixed alkalis on the optical absorption and emission spectra of Sm³⁺ and Dy³⁺ doped chloroborate glass matrices of the compositions 69.5B₂O₃xLiCl(30 − x)NaCl0.5R₂O₃ and 69.5B₂O₃xLiCl(30 − x)KCl0.5R₂O₃ (where R = Sm and Dy and x = 5, 10, 15, 20 and 25). Using Judd-Ofelt theory, the spectral intensities and Judd-Ofelt intensity parameters (Ω_2,Ω₄ and Ω₆) were obtained from the measured absorption bands of the spectra. Using these intensity parameters, total radiative transition probabilities (A_T), radiative lifetimes (τ_R), branching ratios (β) and peak emission cross-sections (σ_P) were obtained for the two rare earth ions in these two glass matrices. Variation of these parameters with x in the glass matrix has been discussed. It is found that for Sm³⁺ ion, the transition, ⁴G_5/2 → ⁶H_9/2 shows highest emission cross-section and is maximum at x = 10 mol% in lithium-sodium and at x = 20 mol% in lithium-potassium glass matrices. For Dy³⁺ ion, the transition, ⁴F_9/2 → ⁶H_13/2 shows highest emission cross-section and is maximum at x = 20 mol% in lithium-sodium and at x = 10 mol% in lithium-potassium glass matrix.     

Structure and electrical transport properties of pure and Li2O-doped CuO/MgO solid solution

The different electrical properties, σ, ?′, tan δ and E_σ of pure and Li₂O-doped CuO/MgO solid solution were investigated. The mole fraction of CuO (MF) was varied between 0.048 and 0.2. Pure and doped samples were subjected to heat treatments at 673 and 1073 K. The results revealed that the amount of CuO dissolved in MgO lattice increases progressively by increasing the MF as evidenced from the progressive decrease in the intensity of all diffraction lines of undissolved CuO phase. The dissolution process of copper ions in MgO lattice was accompanied by progressive increase in its lattice parameter. This process being conducted at 1073 K was accompanied by a significant progressive increase in the values of σ, ?′ and tan δ with subsequent decrease in the value of E_σ. The increase in the MF value of CuO from 0.048 to 0.2 led to a significant increase in the value of σ_DC, measured at room temperature, from 6.33 × 10⁻¹² to 9.9 × 10⁻¹⁰ Ω⁻¹ cm⁻¹ and E_σ decreases from 0.76 to 0.58 eV.Li₂O doping of the investigated system followed by calcination at 1073 K resulted in a measurable increase in values of σ, ?′ and tan δ with subsequent decrease in E_σ. These results were discussed in the light of the possible effective increase in the charge carriers concentration (Cu²⁺ions dissolved in MgO lattice) and also to an effective increase in mobility of these charge carriers by Li₂O doping.     

Influence of Se on the electron mobility in thermal evaporated Bi2(Te1−xSex)3 thin films

Thermoelectric solid solutions of Bi₂ (Te_1−xSe_x)₃ with x = 0, 0.2, 0.4, 0.6, 0.8 and 1 were grown using the Bridgman technique. Thin films of these materials of different compositions were prepared by conventional thermal evaporation of the prepared bulk materials. The temperature dependence of the electrical conductivity σ, free carriers concentration n, mobility μ_H, and seebeck coefficient S, of the as-deposited and films annealed at different temperatures, have been studied at temperature ranging from 300 to 500 K. The temperature dependence of σ revealed an intrinsic conduction mechanism above 400 K, while for temperatures less than 400 K an extrinsic conduction is dominant.The activation energy, ΔE, and the energy gap, E_g, were found to increase with increasing Se content. The variation of S with temperature revealed that the samples with different compositions x are degenerate semiconductors with n-type conduction. Both, the annealing and composition effects on Hall constant, R_H, density of electron carriers, n, Hall mobility, μ_H, and the effective mass, m^∗/m₀ are studied in the above temperature range.     

Forbidden energy band gap in diluted a-Ge1 − xSix:N films

By means of electron gun evaporation Ge_1 − xSi_x:N thin films, in the entire range 0 ≤ x ≤ 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 × 10^− 4 Pa, then a pressure of 2.7 × 10^− 2 Pa of high purity N₂ was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge_1 − xSi_x:N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E_g) was calculated. The Raman spectra only reveal the presence of SiSi, GeGe, and SiGe bonds. Nevertheless, infrared spectra demonstrate the existence of SiN and GeN bonds. The forbidden energy band gap (E_g) as a function of x in the entire range 0 ≤ x ≤ 1 shows two well defined regions: 0 ≤ x ≤ 0.67 and 0.67 ≤ x ≤ 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E_g(x). In this case E_g(x) versus x is different to the variation of E_g in a-Ge_1 − xSi_x and a-Ge_1 − xSi_x:H. This fact can be related to the formation of Ge₃N₄ and GeSi₂N₄ when x ≤ 0.67, and to the formation of Si₃N₄ and GeSi₂N₄ for 0.67 ≤ x.     

Elastic properties and Vickers hardness of optically transparent glass-ceramics with fresnoite Ba2TiSi2O8 nanocrystals

Optically transparent glass-ceramics (40BaO-20TiO₂-40SiO₂ (mol%)) consisting of nonlinear optical fresnoite Ba₂TiSi₂O₈ (BTS) nanocrystals (diameter: 100-200 nm) are fabricated, and their elastic properties and deformation behavior are examined as a function of the volume fraction (f) of BTS nanocrystals using cube resonance and Vickers indentation techniques. The elastic properties such as Young's modulus (E) increases linearly with increasing the volume fraction of nanocrystals, e.g., E = 84 GPa for f = 0% (glass) to E = 107 GPa for f = 54.5%. The Vickers hardness (H_v) and indentation fracture toughness (K_c) increase from 5.0 to 6.0 GPa for H_v and 0.48 to 1.05 MPa m^−1/2 for K_c with increasing the volume fraction (from f = 0% to f = 54.5%), but they do not change linearly against the volume fraction of nanocrystals. It is suggested that BTS nanocrystals themselves induce a high resistance against deformation during Vickers indenter loadings.     

Lithium conducting glass ceramic with Nasicon structure

Lithium ion conducting glass and glass ceramic of the composition Li_1.4[Al_0.4Ge_1.6(PO₄)₃], have been synthesized. The monolithic glass pieces on thermal treatment resulted in single-phase glass ceramic with the Nasicon structure. Experiments with different electrodes proved that the lithium electrodes provide accurate values for the ionic conductivity using impedance spectroscopy. σ_ionic of the glass ceramic was found to be 3.8×10⁻⁵ S cm⁻¹ at 40°C with an activation energy (E_a) of 0.52 eV. The corresponding values for the glass are 2.7×10⁻⁹ S cm⁻¹ and 0.95 eV, respectively. The Arrhenius dependence of σ_ionic with temperature in glass and glass ceramic is interpreted with a hopping mechanism from which the microscopic characteristics of the lithium cation motion are deduced.     

Crystal growth and thermal neutron scintillation response of Ce doped KLiYF5

K⁶Li(Y_1−xCe_x)F₅ (x = 0.003, 0.02) single crystals were grown from the melt using the precise atmosphere control type Micro-Pulling-Down (μ-PD) method to examine their potential as a new thermal neutron scintillators. The grown crystals were single-phase materials as confirmed by XRD. The crystals demonstrated 40-60% transmittance above 320 nm and Ce³⁺ 5d-4f luminescence observed around 340 nm when exited by α-ray. The radio luminescence measurements under thermal neutron excitation (²⁵²Cf) demonstrated the light yield of 890 (Ph/neutron) and the decay time excited by α-ray exhibited 20 and 259 ns.     

Young's modulus of Fe-, Co-, Pd- and Pt-based amorphous wires produced by the in-rotating-water spinning method

This paper presents the Young's modulus of Fe_100?x?y Si _x B _y , Fe_100?x?y P _x C _y , Co_100?x?y Si _x B _y , Pd_77.5Cu₆Si_16.5, Pd₄₈Ni₃₂P₂₀ and Pt₆₀Ni₁₅P₂₅ amorphous wires determined from the Young's modulus sound velocity measurement. With increasing metalloid content, the Young's modulus increases from 1.58×10¹¹ to 1.87×10¹¹ N m^?2 for Fe-Si-B, from 1.40×10¹¹ to 1.52×10¹¹ N m^?2 for Fe-P-C and from 1.73×10¹¹ to 1.75×10¹¹ N m^?2 for Co-Si-B systems. The increase in Young's modulus with the amount of metalloid elements is the largest for B, followed by Si, C and then P. The Young's modulus of Fe- and Co-Si-B amorphous wires increases significantly with the replacement of iron or cobalt by IV–VII group transition metals. It was recognized that there existed a strong correlation between Young's modulus (E) and tensile fracture strength (σ _f); the ratio of σ _f to E is approximated to be 0.02 for all the amorphous wires investigated. These results imply that the Young's modulus is dominated mainly by the structural and compositional short-range orderings due to the strong interaction between metal and metalloid atoms which hinders the internal displacements. The existence of a constant ratio for σ _f/E was interpreted to originate from a common mechanism for plastic flow of the amorphous wires. Further, it was noted that the Young's modulus of the Fe- and Co-based amorphous wires with diameters of ? 100 to 120 Μm was slightly lower than that of the amorphous ribbons with thicknesses of ? 20 to 25 Μm. This difference was attributed to the difference in structural ordering due to the differences in the solidification processes.     

Structural aspects of adamantine like multinary chalcogenides

The present state of knowledge of structure, phase relations and metal ordering in 2(ZnX)_x(CuBX₂)_1 − x (B = Ga, In and X = S, Se, Te) and Cu₂Zn_xFe_1 − xSnS₄ multinary compounds is discussed. The chemical disorder process in 2(ZnX)_x(CuBX₂)_1 − x alloys leads to a phase separation, i.e. in a certain composition range (2-phase field) two phases, tetragonal domains and a cubic matrix, coexist. Its width depends on the three-valent cation only and is independent from the size of anion. In the subsolidus region of the 2(ZnX)_x(CuBX₂)_1 − x system the stability range of tetragonal mixed crystals as well as the miscibility gap is decreasing, the stability range of cubic mixed crystals is increasing. The process of structural disorder in 2(ZnX)_x(CuBX₂)_1 − x as well as Cu₂Fe_1 − xZn_xSnS₄ alloys is connected to the cation substructure. In tetragonal 2(ZnX)_x(CuInX₂)_1 − x alloys a non-random Zn distribution on the both cation positions of the chalcopyrite-type structure was revealed, whereas a random distribution of Zn and Cu on two different sites of the kesterite type structure was obtained in Cu₂ZnSnS₄ in contradiction to literature. The crossover from stannite (x = 0) to kesterite (x = 1) in Cu₂Fe_1 − xZn_xSnS₄ is considered as a three-stage process of cation restructure involving Cu⁺, Zn²⁺ and Fe²⁺, whereas Sn⁴⁺ does not take part in this process. In tetragonal 2(ZnX)_x(CuInX₂)_1 − x alloys the anion displacement is decreasing with increasing ZnX content in CuInX₂ indicating a decreasing tetragonal distortion. Here the disorder process in the cation substructure and the displacement process in the anion substructure are coupled.