High pressure and time resolved luminescence spectra of Gd3Ga5O12:Pr crystal

Luminescence spectra and time resolved luminescence spectra of GGG crystal doped with Pr³⁺ were measured at high hydrostatic pressure from ambient to 220 kbar. Effect of pressure results in the red shift of all luminescence lines related to Pr³⁺ ion emission equals from −0.32 to −1.02 cm⁻¹/kbar and in the diminishing of the luminescence lifetimes. The luminescence decay related to emission from ³P₀ state was single-exponential and diminished with pressure from 23 μs at ambient pressure to 6.5 μs at 165 kbar. Luminescence decay related to transition form ¹D₂ state was two-exponential with longer decay equal to 162 μs at ambient pressure and 120 μs at 165 kbar. We discussed effect of pressure on the ¹D₂ → ³H₄ luminescence and emission from ³P₀ state in the context of non-radiative processes that depopulate the ³P₀ and populate the ¹D₂ state, considering mainly multiphonon relaxation processes and depopulation via the praseodymium trapped exciton state.     

Low temperature luminescence of KMgF3:Eu crystal

Paper presents luminescence spectra and time resolved spectra of KMgF₃:Eu²⁺ system obtained at different temperatures and pressures, under excitation with 325 nm. At temperatures between 200 K and 292 K the spectra consist of sharp line peaked at 27,830 cm⁻¹ related to ⁶P_7/2 → ⁸S_7/2 transition in Eu²⁺ accompanied by the phonon sideband. Under pressure the red spectral shift with the rate equal to −0.6 cm⁻¹/kbar is observed. Luminescence decay is single-exponential with the lifetime equal to 5.2 ms independent of pressure and temperature. The emission spectra obtained at temperatures lower than 125 K consist of 5 sharp lines peaked at 27,590 cm⁻¹, and 27,670 cm⁻¹, 27,722 cm⁻¹, 27,766 cm⁻¹ and 27,809 cm⁻¹, that relative intensity depends on temperature. Pressure shift of these lines was found to be equal to −0.6 cm⁻¹/kbar; the same as ⁶P_7/2 → ⁸S_7/2 transition in Eu²⁺, whereas their lifetime is shorter and is equal to 0.7 ms at 100 K. These new lines disappear at temperature greater than 200 K. We tentatively related them to the luminescence of Eu²⁺-F center (fluorine vacancy with electron) complex.     

Glass formation tendency in the system SeO2-Ag2O-B2O3

The glass formation regions in the system SeO₂-Ag₂O-B₂O₃ have been determined using the melt quenching method of evacuated silica ampoules. The structural units forming the amorphous network have been established by IR spectroscopy. The presence of SeO₃ (ν = 820 cm⁻¹; 760-750 cm⁻¹), BO₃ (ν = 1340, 1270 cm⁻¹) and BO₄ (ν = 1050 cm⁻¹) units has been confirmed. Crystallization of Ag₂SeO₃ only has been observed in a wide concentrate region near the glass formation boundary. A model explaining the unsatisfactory glass formation ability in the system investigated has been developed. It has been suggested that Ag⁺ ions are predominantly located near the selenite units, which stimulates the formation of isolated SeO₃ groups. The transformation of BO₃ into BO₄ units is hindered by the absence of free Ag⁺ ions near the borate units.     

Crystal growth and thermal neutron scintillation response of Ce doped KLiYF5

K⁶Li(Y_1−xCe_x)F₅ (x = 0.003, 0.02) single crystals were grown from the melt using the precise atmosphere control type Micro-Pulling-Down (μ-PD) method to examine their potential as a new thermal neutron scintillators. The grown crystals were single-phase materials as confirmed by XRD. The crystals demonstrated 40-60% transmittance above 320 nm and Ce³⁺ 5d-4f luminescence observed around 340 nm when exited by α-ray. The radio luminescence measurements under thermal neutron excitation (²⁵²Cf) demonstrated the light yield of 890 (Ph/neutron) and the decay time excited by α-ray exhibited 20 and 259 ns.     

Crystal growth and scintillation properties of (NaxCa1−2xLux−yNdy)F2 single crystals

Na_xCa_1−2xLu_x−yNd_yF₂ single crystals were grown from the melt using the precise atmosphere control type Micro-Pulling-Down (μ-PD) method to investigate their potential as a vacuum-ultraviolet (VUV) scintillators. The grown crystals were single-phase materials with fluorite-type structure (Fm-3m, Z = 4) as confirmed by XRD. The crystals demonstrated 80-90% transmittance above 200 nm wavelength and Nd³⁺ 5d-4f luminescence (when exited by X-ray) observed around 185 nm. The radioluminescence measurements under 5.5 MeV α-ray excitation (²⁴¹Am) demonstrated the light yield of 48 [Ph/5.5 MeV-α] and the decay time of 6.4-7.7 ns.     

Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

The energy distribution and density of interface traps (D_it) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10¹² cm⁻² eV⁻¹ to 3.66 × 10¹³ cm⁻² eV⁻¹ due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D_it of the TFT-type cells was similar to those of bulk-type cells.     

Synthesis, calorimetric, structural and conductivity studies in a new thallium selenate tellurate adduct compound

The crystal structure of the thallium selenate tellurate Tl₂SeO₄·Te(OH)₆ (TlSeTe) was determined by X-ray diffraction method. The title compound crystallizes in the monoclinic system with P2₁/c space group. The following parameters are: a = 12.358(3) Å; b = 7.231(1) Å; c = 11.986(2) Å; β = 111.092(2)°; Z = 4.The structure can be regarded as being built of isolated TeO₆ octahedra and SeO₄ tetrahedra. The Tl⁺ cations are intercalated between these kinds of polyhedra. The main feature of this structure is the coexistence of two different and independent anions (SeO₄²⁻ and TeO₆⁶⁻) in the same unit cell. The structure is stable due to OH···O hydrogen bonds which link tetrahedral and octahedral groups.Crystals of Tl₂SeO₄·Te(OH)₆ undergo three endothermal transitions at 373, 395 and 437 K. These transitions are detected by DSC and analyzed by dielectric measurements with impedance spectroscopy. The evolution of conductivity versus temperature showed the presence of a protonic conduction phase transition at 437 K. The phase transition at 373 K can be related to a structural phase transition, whereas the one at 395 K is ascribed as likely due to a ferroelectric-paraelectric phase transition.     

Luminescence quenching processes in Gd2O2S:Pr,Ce scintillating ceramics

Temperature dependent radioluminescence under X-ray excitation (XRL) and luminescence decay time measurements following 430 nm laser excitation have been performed in the 10-775 K range on Gd₂O₂S:Pr³⁺,Ce³⁺ scintillating ceramics. From 200 K to both low and high temperature, XRL light yield decreases by 60%. High temperature luminescence quenching has been revisited. Temperature dependent lifetime measurements imply non-radiative de-excitation mechanism at electronic defects spatially correlated to Pr³⁺ emitting ions. At low temperatures, decreasing XRL light yield with irradiation time is linked to very intense thermoluminescence (TL) peak around 120 K ascribed to sulfur vacancies. These traps cause efficient electron trapping which competes with the prompt recombination mechanism.     

Multi-color long-lasting phosphorescence in Mn-doped ZnO-B2O3-SiO2 glass-ceramics

Multi-color LLP phenomenon was observed in Mn²⁺-doped ZnO-B₂O₃-SiO₂ glass-ceramics after the irradiation of a UV lamp at room temperature. Transparent ZnO-B₂O₃-SiO₂ glass emitted reddish LLP while opaque glass-ceramics prepared by the glass sample after heat treatment emitted yellowish or greenish LLP. The change of the phosphorescence is due to the alteration of co-ordination state of Mn²⁺. The phosphorescence of the samples was seen in the dark with naked eyes even 12 h after the irradiation with a UV lamp (λ_max=254 nm) for 30 min. Based on the approximative t⁻¹ decay law of the phosphorescence, we suggest that the LLP is attributed to the thermally assisted electron-hole recombination.     

Preparation and photoluminescence properties of γ-KCaPO4: Eu phosphors for near UV-based white LEDs

Novel whitish-blue phosphors based on a phosphate host matrix, γ-KCaPO₄: Eu²⁺, were prepared by a conventional solid-state reaction method using slightly phosphorus deficient conditions and their photoluminescence properties were investigated. The concentration quenching process, temperature dependence of the luminescence and decay curve were also investigated. The γ-KCaPO₄: Eu²⁺ phosphor was efficiently excited by UV-Visible light at wavelengths of 200-450 nm and exhibited a bright whitish-blue emission with a maximum peak wavelength of 473 nm. All of these characteristics suggest that the γ-KCaPO₄: Eu²⁺ phosphors combined with red phosphors could be applicable to near UV-based white LEDs, i.e., only two kinds of phosphor powders are needed for the formation of white light.     

Absorption and emission properties of Ho doped lead-zinc-borate glasses

This paper reports on the affect of lead content on the absorption and emission spectra of the Ho³⁺ ion doped lead-zinc-borate glasses in the composition (mol%) of (20 − x)PbO-20ZnO-(59 + x)B₂O₃-1.0Ho₂O₃ where x = 0, 5,10,15 of PbO content with λ_exc = 405 nm. The experimental absorption band energies have satisfactorily been correlated with the theoretical results with an r.m.s deviation of zero with the following correction factors obtained by a least square fit analysis: ΔE¹ = 348.495936 cm^− 1, ΔE² = 1.436043 cm^− 1, ΔE³ =  46.481575 cm^− 1, Δξ_4f = − 28.512979 cm^− 1, Δα = 55.508936 cm^− 1, Δβ = − 1394.339908 cm^− 1 and Δγ = 1208.424336 cm^− 1. By applying the Judd-Ofelt intensity parameter Ω₂ has been found to be linearly decreasing with the PbO content from 5 to 10 mol% and then increasing. And also radiative (A, A_T, β, τ_r) characteristic factors of the luminescent transitions (⁵I₈ ← ⁵F_3,4,5 and ⁵S₂) of the glasses have been evaluated. Stimulated emission cross-sections (σ_p^E) of the measured emission transitions of holmium glasses have also been computed.     

Visible light degradation of Orange II using xCuyOz/TiO2 heterojunctions

Cu₂O/TiO₂, Cu/Cu₂O/TiO₂ and Cu/Cu₂O/CuO/TiO₂ heterojunctions were prepared and studied for their potential application as photocatalysts able to induce high performance under visible light. Orange II was used as a representative dye molecule. The effect of the amount and composition of the photosensitizers toward the activation of TiO₂ was studied. In each case, the global mechanism of Inter Particle Electrons Injection (IPEI) was discussed. The highest photocatalytic activity was observed for the system Cu/Cu₂O/CuO (MB2 catalyst) under visible light (t_1/2 = 24 min, k = 159.7 × 10⁻³ min⁻¹) and for the heterojunction cascade Cu/Cu₂O/CuO/TiO₂ (MB2 (50%)/TiO₂) under UV–vis light (t_1/2 = 4 min, k = 1342 × 10⁻³ min⁻¹). In the last case, the high performance was attributed firstly to the electromotive forces developed under this configuration in which CuO energy bands mediate the electrons transfer from Cu₂O to TiO₂. The formation of monobloc sensitizers also accounts for the decrease of the probability of the charges lost. It was demonstrated that “Cu₂O/CuO” governs the capability of the heterojunction cascade and Cu does not play a significant role regardless of the heterojunction cascade efficiency. The electrical energy consumption per order of magnitude for photocatalytic degradation of Orange II was investigated for some representative catalytic systems. Visible/MB2 and UV/vis MB2 (50%)/TiO₂ exhibited respectively 0.340 and 0.05 kWh m⁻³ demonstrating the high efficiency of the systems.     

Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell

The electrical and photovoltaic properties of the Au/n-GaAs Schottky barrier diode have been investigated. From the current-voltage characteristics, the electrical parameters such as, ideality factor and barrier height of the Au/n-GaAs diode were obtained to be 1.95 and 0.86 eV, respectively. The interface state distribution profile of the diode as a function of the bias voltage was extracted from the capacitance-voltage measurements. The interface state density D_it of the diode was found to vary from 3.0 × 10¹¹ eV⁻¹ cm⁻² at 0 V to 4.26 × 10¹⁰ eV⁻¹cm⁻² at 0.5 V. The diode shows a non-ideal current-voltage behavior with the ideality factor higher than unity due to the interfacial insulator layer and interface states. The diode under light illumination exhibits a good photovoltaic behavior. This behavior was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current density were obtained to be 362 mV and J_sc = 28.3 μA/cm² under AM1, respectively.     

Luminescence of rare earth borosilicates with the stillwellite and related structures

By hydrothermal reactions it was possible to prepare well-crystallized borosilicates of composition La_{1 − x − y}Ln_xLn′_yBSiO₅ with the trigonal stillwellite structure. Ln = Eu³⁺ and Tb³⁺ produce compounds with only weak luminescence. Compounds with Ln = Ce³⁺ are strong UV phosphors with peak intensity at x = 0.08 and abrupt concentration quenching at x = 0.10. Compounds with Ln = Ce³⁺ and Ln′ = Tb³⁺ exhibit effective Ce³⁺ → Tb³⁺ coactivation and strong green luminescence. This family of borosilicates appears to be useful phosphor hosts, aside from the necessity of non-traditional synthesis.     

Silicon oxide synthesized using an atmospheric pressure microplasma jet from a tetraethoxysilane and oxygen mixture

Local deposition of SiO_x was studied using an atmospheric pressure very-high-frequency (VHF) inductive coupling microplasma jet (AP-MPJ) from a tetraethoxysilane ((Si(OC₂H₅)₄), TEOS) and oxygen mixture. The SiO_x obtained showed the dielectric constant of 3.8 with a low leakage current of the order of ∼ 10^− 6 A ·cm^− 2 up to 8 MV ·cm^− 1. Bottom-gated sputtered-ZnO thin-film transistors with a AP-MPJ SiO_x as a gated dielectric layer exhibited a relatively high field-effect mobility of 24 cm² V^− 1 s^− 1, a threshold voltage of 14 V and an on/off current ratio of ∼ 10⁴, a performance comparable to that of thermal silicon dioxide. The TFT performance was also obtained for the top-gated ZnO-TFTs with a field-effect mobility of 1.4 cm² ·V^− 1 s^− 1, a threshold voltage of − 1.9 V, and an on/off current ratio of ∼ 10³.     

Growth, linear and nonlinear optical and, laser damage threshold studies of organometallic crystal of MnHg(SCN)4

Single crystals of bimetallic MnHg(SCN)₄ (abbreviated as MMTC) are grown by slow cooling method and the second and third order optical nonlinearities are investigated by Kurtz and Perry powder SHG test and single beam Z-scan technique respectively. The influences of SCN ligand in modifying the NLO properties are discussed and the results are compared with other organometallic crystals. The nonlinear refractive index, absorption coefficient and third order susceptibility are estimated to be −1.88 × 10⁻¹¹ cm²/W, 8.65 × 10⁻⁶ cm/W and 6.58 × 10⁻⁹ esu, respectively. The optical absorption of MMTC single crystal was recorded and the corresponding direct band gap is found to be 4.2 eV. The phase matching and laser induced damage threshold studies are also carried out. The FT-IR and photoluminescence spectroscopic techniques were employed to identify the composition and luminescence nature of the crystal.     

Thermal properties of TiO2 films grown by atomic layer deposition

We study the thermal properties of amorphous TiO₂ thin films of various thicknesses t, grown by atomic layer deposition. The thermo-optic coefficient dn/dT and the temperature coefficient dρ/dT of film density ρ are determined from ellipsometric data in wavelength range 380 < λ < 1800 nm with the Cauchy model and the Lorentz-Lorenz relation. It is found that dn/dT exhibits negative values for films with t < 150 nm and positive values for thicker films, while no significant changes in the two coefficients take place if t < 200 nm. A qualitative physical explanation based on porosity of the thin films is suggested. Films with t = 60 nm are illustrated in detail at λ = 640 nm: the room-temperature values of the coefficients are found to be dn/dT = − 3.1 × 10^− 5 °C^− 1 and dρ/dT = − 4.8 × 10^− 5g cm^− 3° C^− 1.     

Second Harmonic Generation induced by optical poling in new TeO2-Tl2O-ZnO glasses

New tellurite glasses with a large glass forming domain were elaborated within the TeO₂-Tl₂O-ZnO ternary system. The evolution of the glass transition (T_g) and onset crystallization (T₀) temperatures for such tellurite glasses was studied, in particular, as a function of the Tl₂O addition. A decrease of both T_g and T₀ temperatures was observed; the former being more affected. Structural modifications induced by the addition of the modifiers were studied by Raman spectroscopy. For a fixed ZnO concentration, the increase in the Tl₂O content leads to a destruction of the glass framework, characterized by the transformation of TeO₄ disphenoids into isolated TeO₃²⁻ trigonal pyramid-like ortho-groups. For a fixed Tl₂O concentration, the ZnO addition induces similar effects on the glass structure. The optical transmission of the ((80 − x)TeO₂-xTl₂O-20ZnO) (x = 10, 20 and 30 mol%) glasses was measured in the 300-2000 nm range. Their good transparency was evidenced and a clear reduction of the optical band-gap was noticed with the increase in the Tl₂O content. Finally, Second Harmonic Generation was unambiguously detected for each glass composition. The second order non-linearity amplitude is found to be increasing as a function of the Tl₂O concentration, in the tested range.     

Protonic conduction in Ca-doped La2M2O7 (M = Ce, Zr) with its application to ammonia synthesis electrochemically

Complex oxides La_1.95Ca_0.05M₂O_7−δ (M = Ce, Zr) were prepared by sol-gel method and characterized by thermal analysis (TG-DTA), X-ray diffraction (XRD). On the sintered complex oxides as solid electrolyte, the conductivity was measured in various atmospheres, and ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in the solid states proton conducting cell reactor by electrochemical methods. The rates of ammonia formation were up to 2.0 × 10⁻⁹ mol s⁻¹ cm⁻² for La_1.95Ca_0.05Zr₂O_7−δ and 1.3 × 10⁻⁹ mol s⁻¹ cm⁻² for La_1.95Ca_0.05Ce₂O_7−δ, respectively, at 520 °C.