A high-order corrected description of ultra-short and tightly focused laser pulses, and their electron acceleration in vacuum

Field expressions are derived for ultra-short, tightly focused laser pulses up to the second-order temporal correction and seventh-order spatial correction. To evaluate the importance of these corrections, we simulate these fields and investigate the final energy of the accelerated electrons. We vary the order of the corrected expressions, the pulse duration, and the beam waist. We find that electron capture is still an important and generic phenomenon in ultra-short, tightly focused laser pulses. While small differences in the electron acceleration are obtained for various orders of the corrected field equations relative to the paraxial field equations, there is no qualitative difference in the behavior of the electron. Furthermore, the temporal and spatial corrections are found to be correlated.     

Self-referenced spectral interferometry cross-checked with SPIDER on sub-15 fs pulses

We characterized 11.7 fs nearly perfect Fourier Transform pulses with self-referenced spectral interferometry (SRSI), a new recently demonstrated technique. These pulses were first precisely optimized with three feedback loops between the SRSI setup and an AOPDF. An inherent control criterion to confirm that the measurement quality is theoretically derived and experimentally demonstrated. Each experimental result was cross-checked with SPIDER.     

Generation of fast protons by interaction of modest laser intensities with H2O “snow” nano-wire targets

We report on the generation of protons with energies of 5.5 MeV when irradiating an H₂O nano-wire layer grown on a sapphire plate with an intensity of 5×10¹⁷ W/cm². A theoretical model is suggested in which plasma near the tip of the wire is subject to enhanced electrical fields and protons are accelerated to several MeVs.     

Experiments of high energy gain laser wakefield acceleration

The wakefield acceleration of electrons has a great potential for the future accelerator because of its high accelerating field gradient. We have obtained over 100 MeV acceleration gain by the wakefield generated by a 2 TW Ti: sapphire laser system. In the acceleration experiment, the 17 MeV electrons from a linac were used for the injection beam. The synchronization between the RF signal and the laser pulse was achieved within the time jitter of 3.7 ps. Due to the self-focusing and ionization, a long propagation length and high field gradient were realized. The self-focusing effect of the laser was confirmed by the laser spotsize measurement along the beam axis. The plasma density oscillation was measured by using the frequency domain interferometry. The acceleration gain expected from the plasma density measurement was consistent with the result of the acceleration experiments.     

Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(0 0 1)

ZnO thin films were prepared on Si(0 0 1) substrates using a pulsed laser deposition (PLD) technique and then their growth and properties were investigated particularly as a function of ambient O₂ pressure during film growth. It was found that the microstructure, crystallinity, orientation and optical properties of the films grown are strongly dependent on the O₂ pressures used. Completely c-axis oriented ZnO films are grown in a low O₂ pressure regime (5×10⁻⁴-5×10⁻² Torr), whereas a randomly oriented film with a much lower crystallinity and a rougher grained-surface is grown at an O₂ pressure of 5×10⁻¹ Torr. This deterioration in film quality may be associated with the kinetics of atomic arrangements during deposition. Our results suggest that ambient O₂ pressure is an important processing parameter and should be optimized in a narrow regime in order to grow a ZnO film of good properties in PLD process.     

Nonlinear optical response of silica doped with copper nanoclusters under 1064 nm laser excitation

Metal nanocluster composite glass was formed by Cu ion implantation into silica using metal vapor vacuum arc (MEVVA) ion source. The microstructural properties of the nanoclusters were analyzed by optical absorption spectra and transmission electron microscopy (TEM). Third-order nonlinear optical properties of the nanoclusters were measured at 1064 nm excitations using Z-scan technique. The nonlinear refraction index, nonlinear absorption coefficient, and the real and imaginary parts of the third-order nonlinear susceptibility were deduced. The mechanisms responsible for the nonlinear response were discussed. Third-order nonlinear susceptibility χ⁽³⁾ of this kind of sample was determined to be (4.2 ± 1.0) × 10⁻⁸ esu.     

Large area Ba1 − xSrxTiO3 thin films for microwave applications deposited by pulsed laser ablation

Large area Ba_1 − xSr_xTiO₃ (BST) thin films with x = 0.4 or x = 0.5 were deposited on 75 mm diameter Si wafers in a pulsed laser deposition (PLD) chamber enabling full-wafer device fabrication using standard lithography. The deposition conditions were re-optimized for large PLD chambers to obtain uniform film thickness, grain size, crystal structure, orientation, and dielectric properties of BST films. X-ray diffraction and microstructural analyses on the BST films grown on Pt/Au/Ti electrodes deposited on SiO₂/Si wafers revealed films with (110) preferred orientation with a grain size < 100 nm. An area map of the thickness and crystal orientation of a BST film deposited on SiO₂/Si wafer also showed (110) preferred orientation with a film thickness variation < 6%. Large area BST films were found to have a high dielectric tunability of 76% at an electric field of 400 kV/cm and dielectric loss tangent below 0.03 at microwave frequencies up to 20 GHz and a commutation quality factor of ~ 4200.     

Microstructure tuning of epitaxial BaTiO3 − x thin films grown using laser molecular-beam epitaxy by varying the oxygen pressure

Microstructural properties are found to be variant in the BaTiO_3 − x films grown on SrTiO₃(001) substrate under various oxygen pressures from 2 × 10^− 2 Pa to 2 × 10^− 5 Pa by laser molecular-beam epitaxy. Transmission electron microscopic studies reveal that the predominant defects in the films change from threading dislocations into (111) planar defects (i.e. stacking faults and nanotwins) by lowering the oxygen pressure. High density of these defects was observed in the BaTiO_3 − x film prepared at the oxygen pressure of 2 × 10^− 5 Pa, which shows metallic behavior. The relationships between oxygen pressure, microstructure, and electrical properties are established on the basis of oxygen deficiency. The formation of nanotwins in highly oxygen-deficient BaTiO_3 − x epitaxial thin films results from accommodating excess oxygen vacancies induced by lowering oxygen pressure.     

Wear behaviors of an (TiB + TiC)/Ti composite coating fabricated on Ti6Al4V by laser cladding

A titanium-based composite coating reinforced by in situ synthesized TiB whiskers and TiC particles was successfully fabricated on Ti6Al4V by laser cladding. The coating is mainly composed of α-Ti cellular dendrites and a eutectic in which a large number of needle-shaped TiB whiskers and a few equiaxial TiC particles are uniformly embedded. The wear resistance of the coating is significantly superior to that of Ti6Al4V under the dry sliding wear condition at room temperature.     

Electrical and optical investigations on Pb1 − 3x/2LaxZr0.2Ti0.8O3 thin films obtained by radiofrequency assisted pulsed laser deposition

Thin films of ferroelectric relaxor Pb_1 − 3x/2La_xZr_0.2Ti_0.8O₃, x = 0.22 have been integrated in an oxidic heterostructure for electro-optical investigations. The quadratic electro-optic behavior and optical properties have been studied by means of variable angle spectroscopic ellipsometry method in reflection mode. Birefringence values up to δΔ = 0.17° have been obtained for quadratic compositions at λ = 540 nm and 65° angle of incidence. Structural, chemical and morphologic properties of Pb_1-3x/2La_xZr_0.2Ti_0.8O₃ (x = 0.22) thin films have been investigated by x-ray diffraction and atomic force microscopy techniques. The dielectric and ferroelectric behavior has been investigated using dielectric spectroscopy and a ferroelectric test system.     

Towards the sub-50 nm magnetic device definition: Ion beam etching (IBE) vs plasma-based etching

Conventionally, the tunneling magneto resistive (TMR) devices for both hard drive and magnetic random access memory (MRAM) are defined via photolithography and subsequent ion mill processes. Due to non-volatility of ion milling byproducts, re-deposition of device materials across the tunneling barrier will increase the critical dimension (CD) and reduce the pattern transfer fidelity; moreover, it causes electrical shunting and TMR ratio drop. Therefore, either relatively large angle primary or two-step mill with a subsequent large angle side mill is required to clean-up such re-deposition across the barrier. Such primary milling angle and side milling time at a fixed primary mill angle have been determined experimentally to be ∼20-30° and above 30 s, respectively, in this study. However, it was found that extended side milling can cause substantial damage for sub-∼30 nm. We also investigated the plasma-based etching of such TMR devices using various chemistries and presented optical emission spectrum of such chemistries. The plasma etched TMR device profile and the possible interaction between the chemistry with the MgO barrier was also discussed.     

Relationship between microstructure,hardness and corrosion resistance in 20 wt.%Cr, 27 wt.%Cr and 36 wt.%Cr high chromium cast irons

The microstructures, hardness and corrosion behavior of high chromium cast irons with 20, 27 and 36 wt.%Cr have been compared. The matrix in as-cast 20 wt.%Cr, 27 wt.%Cr and 36 wt.%Cr high chromium cast irons is pearlite, austenite and ferrite, respectively. The eutectic carbide in all cases is M₇C₃ with stoichiometry as (Cr_3.37, Fe_3.63)C₃, (Cr_4.75, Fe_2.25)C₃ and (Cr_5.55, Fe_1.45)C₃, respectively. After destabilization at 1000 °C for 4 h followed by forced air cooling, the microstructure of heat-treatable 20 wt.%Cr and 27 wt.%Cr high chromium cast irons consisted of precipitated secondary carbides within a martensite matrix, with the eutectic carbides remaining unchanged. The type of the secondary carbide is M₇C₃ in 20 wt.%Cr iron, whereas both M₂₃C₆ and M₇C₃ secondary carbides are present in the 27 wt.%Cr high chromium cast iron. The size and volume fraction of the secondary carbides in 20 wt.%Cr high chromium cast iron were higher than for 27 wt.%Cr high chromium cast iron. The hardness of heat-treated 20 wt.%Cr high chromium cast iron was higher than that of heat-treated 27 wt.%Cr high chromium cast iron. Anodic polarisation tests showed that a passive film can form faster in the 27 wt.%Cr high chromium cast iron than in the 20 wt.%Cr high chromium cast iron, and the ferritic matrix in 36 wt.%Cr high chromium cast iron was the most corrosion resistant in that it exhibited a wider passive range and lower current density than the pearlitic or austenitic/martensitic matrices in 20 wt.%Cr and 27 wt.%Cr high chromium cast irons. For both the 20 wt.%Cr and the 27 wt.%Cr high chromium cast irons, destabilization heat treatment gave a slight improvement in corrosion resistance.     

Reaction processes in a ZnO + 1%Gd2O3 powder mixture during mechanical and laser processing

X-ray diffraction, electron paramagnetic resonance, Fourier transform infrared spectroscopy and scanning electron microscopy were used to study the defect formation and reaction processes in a ZnO + 1%Gd₂O₃ powder mixture during its mechanical and laser processing. Mechanical treatment of the ZnO + 1%Gd₂O₃ powder mixture leads to a grinding of initial ZnO particles and formation of three types of superficial paramagnetic donor defect centers. The rise of the sample temperature with increasing processing time promotes a successive annealing of ZnO defects with small activation energies and of superficial defects in Gd₂O₃. The formation of a ZnO:Gd³⁺ solid solution in the used mechanical processing regimes has not been observed. Laser surface melting of the ZnO + 1%Gd₂O₃ pellets provokes formation of a surface layer exhibiting a texture. The crystallization directions in the superficial layers of different specimens have a random character. In the superficial layers and deep sub-surface layers, processes of solid-state interactions (formation of an inhomogeneous ZnO:Gd³⁺ solid solution) take place. The surplus charges of the Gd³⁺ ions are compensated by the formation of Zn vacancies or interstitial oxygen ions which in the laser-surface-melted layers are located closer to the Gd³⁺ ions than in the case of single-crystalline samples.     

Cathodic arc plasma deposited TiAlSiN thin films using an Al-15 at.% Si cathode

Thin films of TiAlSiN were deposited on SKD 11 tool steel substrates using two cathodes, of Ti and Al-15 at.% Si, in a cathodic arc plasma deposition system. The influence of AlSi cathode arc current and substrate bias voltage on the mechanical and structural properties of the films was investigated. The TiAlSiN films had a multilayered structure in which nanocrystalline cubic TiN layers alternated with nanocrystalline hexagonal AlSiN layers. The hardness of the films decreased with the increase of the AlSi cathode arc current. The hardness of the films also decreased as the bias voltage was raised from − 50 V to − 200 V. The maximum hardness of 43 GPa was observed at the films deposited at the pressure 0.4 Pa, Ti cathode arc current 55 A, Al cathode arc current 35 A, temperature 250 °C and bias voltage of − 50 V.     

Measurement of the neutron fields produced by a 62 MeV proton beam on a PMMA phantom using extended range Bonner sphere spectrometers

The experimental characterization of the neutron fields produced as parasitic effect in medical accelerators is assuming an increased importance for either the patient protection or the facility design aspects. Medical accelerators are diverse in terms of particle type (electrons or hadrons) and energy, but the radiation fields around them have in common (provided that a given threshold energy is reached) the presence of neutrons with energy span over several orders of magnitude. Due to the large variability of neutron energy, field or dosimetry measurements in these workplaces are very complex, and in general, cannot be performed with ready-to-use commercial instruments.In spite of its poor energy resolution, the Bonner Sphere Spectrometer (BSS) is the only instrument able to simultaneously determine all spectral components in such workplaces. The energy range of this instrument is limited to E<20 MeV if only polyethylene spheres are used, but can be extended to hundreds of MeV by including metal-loaded spheres (extended range BSS, indicated with ERBSS).With the aim of providing useful data to the scientific community involved in neutron measurements at hadron therapy facilities, an ERBSS experiment was carried out at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) of INFN—LNS (Laboratori Nazionali del Sud), where a proton beam routinely used for ophthalmic cancer treatments is available. The 62 MeV beam was directed towards a PMMA phantom, simulating the patient, and two neutron measurement points were established at 0° and 90° with respect to the beam-line. Here the ERBSS of UAB (Universidad Autónoma de Barcelona—Grup de Física de les Radiacions) and INFN (Istituto Nazionale di Fisica Nucleare—Laboratori Nazionali di Frascati) were exposed to characterize the “forward” and “sideward” proton-induced neutron fields. The use of two ERBSS characterized by different set of spheres, central detectors, and independently established and calibrated, is important for guaranteeing the robustness of the measured spectra and estimating their overall uncertainties.     

Synthesis of spherical nanostructured LiMxMn2−xO4 (M = Ni, Co, and Ti; 0 ≤ x ≤ 0.2) via a single-step ultrasonic spray pyrolysis method and their high rate charge-discharge performances

LiM_xMn_2−xO₄ (M = Ni²⁺, Co³⁺, and Ti⁴⁺; 0 ≤ x ≤ 0.2) spinels were prepared via a single-step ultrasonic spray pyrolysis method. Comparative studies on powder properties and high rate charge-discharge electrochemical performances (from 1 to 15 C) were performed. XRD identified that pure spinel phase was obtained and M was successfully substituted for Mn in spinel lattice. SEM and TEM studies confirmed that powders had a feature of ‘spherical nanostructural’, that is, powders consisted of spherical secondary particles with the size of about 1 μm, which were developed from close-packed primary particles with several tens of nanometers. Substitutions enhanced density of second particles to different extents, depending on M and its content. Charge-discharge tests showed that as-prepared LiMn₂O₄ could deliver excellent rate performance (around 100 mAh/g at 10 C). Ni substitution contributed to improving electrochemical performances. In the voltage range of 4.95-3.5 V, the materials showed much better electrochemical performances than LiMn₂O₄ in terms of capacity, cycleability and rate capability.     

Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications

Laser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material surrounding the ablated area by means of Infrared-Visible Fourier transform spectrometry is proposed. Besides, in order to evaluate the material microstructure, Raman spectroscopy is employed as a complimentary technique. It was seen that the refractive index variation decreased as the distance from the center of the ablated groove was increased. Likewise, a clear transition from highly crystalline to amorphous material could be also observed as a function of the distance from the groove.     

Electronic structure of CaX (X = O, S, Se) compounds using Compton spectroscopy

The electronic structure of CaO, CaS and CaSe through Compton spectroscopy is reported in this work. Both directional as well as spherically averaged Compton profiles are calculated for all the three compounds employing the CRYSTAL code within the framework of density functional theory (DFT). The anisotropy [1 0 0]-[1 1 0] for CaO is in agreement with the earlier values. The spherically averaged theoretical values are compared with the first ever measurement made on polycrystalline samples using 59.54 keV gamma-rays from Am²⁴¹ source. The calculations are in good agreement with measurements in all cases. Charge transfer in the three compounds has also been estimated following the ionic model. The present study suggests charge transfer from Ca to X (O, S, Se) atom. On the basis of equal-valence-electron-density (EVED) profiles, it is found that CaO is more ionic compared to CaS and CaSe. From the DFT based calculations, we have also determined the cohesive energies, which are compared with other investigations.