共查询到19条相似文献,搜索用时 140 毫秒
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采用射频感应耦合离子源(ICP)在硅基底上沉积了DLC薄膜,并利用离子束溅射固体单晶石墨的方法掺入Si元素。通过原子力显微镜(AFM)和拉曼光谱对DLC薄膜的表面形貌及结构进行了分析表征。并用UTM-2摩擦磨损试验仪对薄膜进行了刻划测试,通过临界载荷的对比,分析了掺硅和纯DLC薄膜与基底的结合能力。结果表明,掺硅DLC薄膜具有良好的膜-基结合能力。 相似文献
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利用甲烷/氢微波等离子体CVD工艺在纯钛基底上沉积纳米金刚石薄膜 总被引:1,自引:0,他引:1
与微米金刚石薄膜不同,纳米金刚石薄膜表面平滑。因此,在摩擦学应用领域中,纳米金刚石薄膜是最理想的。表研究利用CH4/H2微波等离子体CVD工艺在纯钛上沉积出纳米金刚石薄膜和微米金刚石薄膜。采用的沉积条件为:沉积温度约为1173K;沉积压力为8.0kPa;CH4浓度在0.5mol%和5mol%之间变化;沉积时间则从4h到12h不等。金刚石薄膜表面用扫描电镜(SEM)观察。在激光拉曼光谱中,微米金刚石薄膜在1332cm^-1处有sp^3键碳的锐峰。1140cm^-1附近的光谱带与纳米金刚石薄膜的特征有关。并用X射线衍射对金刚石薄膜进行了分析。X射线衍射花样证实,纳米金刚石薄膜存在(111)面和(220)面。金刚石薄膜的表面粗糙度随着CH4浓度的增加而减小。但是,甲烷浓度在2mol%与5mol%之间变化时,金刚石薄膜的表面粗糙度接近50nm。据证实,CH4浓度在2mol%和5mol%之间,利用CH4/H2微波等离子体CVD工艺可以沉积出纳米金刚石薄膜。 相似文献
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Gil Cabral Jan Gbler Jrn Lindner Jos Grcio Riccardo Polini 《Diamond and Related Materials》2008,17(6):1008-1014
Thin silicon carbide (SiC) films were deposited from tetramethylsilane/hydrogen gas mixture on Co-cemented tungsten carbide (WC–Co) inserts by using Hot-Filament Chemical Vapour Deposition (HFCVD) technique. Grazing incidence X-Ray Diffraction (XRD) confirmed that the films were composed of cubic silicon carbide (β-SiC) and that small amounts of dicobalt silicide (Co2Si) were formed. These films were used as interlayers for subsequent CVD of diamond films. XRD and combined Scanning and Transmission Electron Microscopies showed that the binder phase reacted during CVD to form cobalt silicides. However, these intermetallic compounds did not have bad effects on diamond adhesion. Dry turning of graphite was chosen to check the multilayer (SiC + diamond) film performance. For the sake of comparison, machining tests were also carried out under identical conditions using commercial sintered diamond (PCD) inserts and WC–Co diamond coated inserts with no interlayer. The wear mechanism of the tools has been identified and correlated with the criterion used to evaluate the tool life. The results showed that multilayer (SiC + diamond) coatings exhibited the longest tool lives. Therefore, thin SiC interlayers proved to be a new viable alternative and a suitable option for adherent diamond coatings on cemented carbide components and cutting tools. 相似文献
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《Ceramics International》2022,48(4):5066-5074
We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ~60 nA and the lowest current in SiC at ~30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures. 相似文献
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A. Bogus I.C. Gebeshuber A. Pauschitz Manish Roy R. Haubner 《Diamond and Related Materials》2008,17(12):1998-2004
The morphologies of chemical vapour deposited (CVD) diamond films can be changed over a wide range by controlling the process parameters of the deposition. The surface morphologies of the film in turn, govern the micro- and nanomechanical properties of the film. In view of these, diamond films having three different types of morphologies namely coarse ballas, fine ballas and faceted, have been deposited using microwave chemical vapour deposition (MWCVD) technique. The morphology, and nature of bonds of these films are characterised with the help of scanning electron microscopy (SEM) and Raman spectroscopy. Hardness of the films is evaluated using nanoindenter. Force spectroscopy, topographies and lateral force values of these films are estimated by means of atomic force microscopy (AFM). Results indicate that films having fine ballas morphology exhibit the minimum roughness whereas film with faceted morphology has highest relative hardness. The friction force was found to be minimum with the film having fine ballas morphology and the friction force was maximum with film having coarse ballas morphology. 相似文献
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以CH4和H2为气源,用微波辅助等离子体装置,在10.0 mm×7.0 mm的砷化镓基底上沉积了CVD金刚石薄膜,用扫描电子显微镜观察沉积效果,拉曼光谱表征沉积质量,分析薄膜附着力与砷化镓材料性能的关系。结果表明,当基体温度为600℃,气压为5 kPa,甲烷浓度为2.0%时,在砷化镓片表面上沉积出了CVD金刚石薄膜,晶粒尺寸均匀,晶形完整、规则,晶界非常清晰。 相似文献
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《Diamond and Related Materials》2007,16(8):1455-1458
Polycrystalline diamond films, deposited by microwave plasma chemical vapor deposition (MPCVD), were planarized in hydrogen plasma under the graphitization of iron film obtained by reduction of iron chloride under hydrogen plasma ambient. For this process, the free-standing diamond films were dipped in a saturated iron chloride solution and dried horizontally in atmospheric ambient. Then the diamond samples were heated by hydrogen plasma in the same MPCVD reactor. Under the effect of hydrogen reduction, iron thin film was formed on the surface of diamond films. Under ca. 800 °C, the carbon diffusion process was carried out under the graphitization effect of iron thin film. Since the iron film used in this process is very thin, the diffused carbon will diffuse from the diamond side to the hydrogen plasma side and then etched away by the plasma. Therefore, the etching rate of diamond film can be kept consistent. After etching the growth surface of a free-standing diamond film, we investigated the surface morphologies and the carbon phases on the etched surfaces of diamond films. Finally, compared with the result of mechanical lapping experiments, we suggest that the hydrogen plasma etching enhanced carbon diffusion process can serve as a new planarization method for rough diamond film surface. A mechanism for this enhanced etching effect is also presented and discussed. 相似文献
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《Diamond and Related Materials》2006,15(9):1284-1291
Different Cr- and Ti-base films were deposited using PVD-arc deposition onto WC-Co substrates, and multilayered coatings were obtained from the superimposition of diamond coatings, deposited on the PVD interlayer using hot filament chemical vapour deposition (HFCVD). The behaviour of PVD-arc deposited CrN and CrC interlayers between diamond and WC-Co substrates was studied and compared to TiN, TiC, and Ti(C,N) interlayers. Tribological tests with alternative sliding motion were carried out to check the multilayer (PVD + diamond) film adhesion on WC-Co substrate. Multilayer films obtained using PVD arc, characterised by large surface droplets, demonstrated good wear resistance, while diamond deposited on smooth PVD TiN films was not adherent. Multilayered Ti(C,N) + diamond film samples generally showed poor wear resistance.Diamond adhesion on Cr-based PVD coatings deposited on WC-Co substrate was good. In particular, CrN interlayers improved diamond film properties and 6 μm-thick diamond films deposited on CrN showed excellent wear behaviour characterised by the absence of measurable wear volume after sling tests. Good diamond adhesion on Cr-based PVD films has been attributed to chromium carbide formation on PVD film surfaces during the CVD process. 相似文献
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Boron and silicon doped diamond films are deposited on the cobalt cemented tungsten carbide (WC-Co) substrate by using a bias-enhanced hot filament chemical vapor deposition (HFCVD) apparatus. Acetone, hydrogen gas, trimethyl borate (C3H9BO3) and tetraethoxysilane (C8H20O4Si) are used as source materials. The tribological properties of boron-doped (B-doped), silicon-doped (Si-doped) diamond films are examined by using a ball-on-plate type rotating tribometer with silicon nitride ceramic as the counterpart in ambient air. To evaluate the cutting performance, comparative cutting tests are conducted using as-received WC-Co, undoped and doped diamond coated inserts, with high silicon aluminum alloy materials as the workpiece. Friction tests suggest that the Si-doped diamond films present the lowest friction coefficient and wear rate among all tested diamond films because of its diamond grain refinement effect. The B-doped diamond films exhibit a larger grain size and a rougher surface but a lower friction coefficient than that of undoped ones. The average friction coefficient of Si-doped, B-doped and undoped diamond films in stable regime is 0.143, 0.193 and 0.233, respectively. The cutting results demonstrate that boron doping can improve the wear resistance of diamond films and the adhesive strength of diamond films to the substrates. Si-doped diamond coated inserts show relatively poor cutting performance than undoped ones due to its thinner film thickness. B-doped and Si-doped diamond films may have tremendous potential for mechanical application. 相似文献
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《Journal of Adhesion Science and Technology》2013,27(12):1339-1365
We have investigated the adhesion properties of microcrystalline diamond thin films on Ti-Al-V alloy, Co-Cr-Mo alloy and steel. Microcrystalline diamond possesses high hardness, a low coefficient of friction, extreme chemical inertness and biocompatibility; these properties can enhance the performance of metal alloys used in medical implants and in machine tools. We have adopted three methods for improving the adhesion of microcrystalline diamond to commonly used metal alloys: (1) by alloying the substrate surface to minimize graphitization; (2) by employing appropriate buffer layers between the diamond film and the substrate; and (3) by creating functionally gradient diamond-(titanium carbide, tungsten carbide, titanium nitride and aluminum nitride) composites. We have demonstrated that functionally gradient discontinuous buffer layers of titanium carbide, titanium nitride, aluminum nitride and tungsten carbide are able to control stress and graphitization in microcrystalline diamond thin films. This work on buffer layers and functionally gradient coatings should allow the development of more adherent crystalline diamond films for medical and tribological applications. 相似文献