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1.
新型热释电材料及其在红外探测器中的应用   总被引:1,自引:0,他引:1  
以(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3{PMNT[(1-x)/x}为代表的大尺寸、高质量弛豫铁电单晶具有非常高的热释电系数、探测优值和较低的热扩散系数,其综合热释电性能远优于传统的热释电材料.概述了PMNT[(1-x)/x]单晶、掺锰PMNT(74/26)单晶和0.42Pb(In1/2Nb1/2)...  相似文献   

2.
新型热释电单晶材料与红外探测器的研究   总被引:1,自引:0,他引:1  
主要阐述了当前热释电红外探测器的发展状况,并重点介绍了我国尤其是我们在新型热释电材料以及红外探测器方面的主要进展和成果。弛豫铁电单晶是一类具有优异压电性能的新型材料,同时我们发现该类晶体还具有优异的热释电性能。我们所生长的PMNT单晶的热释电系数超过15.3×10-4cm-2.K-1,Mn-PMNT的介电损耗降至0.0005,探测优值达到40.2×10-5Pa-1/2,高居里温度点单晶PIMNT的居里温度达到180℃以上。与合作单位一起利用该类晶体研制的红外探测器的性能远优于利用传统热释电材料(如LiTaO3)制作的探测器,其比探测率达到1.07×109 cm·Hz1/2/·W-1,说明利用该新型弛豫铁电单晶制作的红外探测器具有广阔的应用前景。  相似文献   

3.
基于弛豫铁电单晶的红外热释电探测器研究   总被引:2,自引:2,他引:0  
研究了新型热释电材料驰豫铁电单晶(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMNT)的低损伤减薄工艺、电极成型和耦合封装等关键技术,研制了基于PMNT的单元热释电探测器。对减薄后约30μm晶片材料性能的测试分析表明,部分样品的热释电系数约为9.0×10-4 C/m2 K,无明显衰减。采用低噪声电路提取单元探测器的微弱热释电电流,对所研制的单元探测器性能进行了测试分析。  相似文献   

4.
锰离子掺杂铌镁酸铅-钛酸铅(Mn:Pb(Mg1/3Nb2/3)O3-PbTiO3,Mn:PMN-PT)弛豫铁电单晶在近、中红外波段具有较高的光透过率.通过在其表面上沉积具有宽光谱平坦吸收特性的红外吸收层,制备了热释电红外响应元.对该材料吸收红外辐射后产生的温度差以及热释电电流随频率的变化进行了模拟.讨论了电压模式热释电...  相似文献   

5.
新型热释电材料弛豫铁电单晶(PMN-PT),其具有优异的压电效应和热释电效应,对外界的干扰也更加敏感,制成传感器后会产生更多的噪声.针对新型红外传感器读出信号中噪声的产生机理、特点进行了分析与研究,利用计算机仿真出的带有白噪声和1/f噪声,信噪比为0 dB左右的读出信号模型,分别使用自相关算法和小波降噪算法对其进行降噪...  相似文献   

6.
用Sawyer电滞电桥测得了室温下LiTaO_3单晶的电滞回线,由此算得自发极化强度P_s=50±25μC/cm~2,矫顽场强E_o=1.8×10~4 V/cm。测量了用提拉法生长的LiTaO_3单晶的介电常数、介电损耗和热释电系数。测量结果表明,LiTaO_3单晶的介电损耗tanδ可以低达3×10~(-4),适用于制作热释电红外探测器。极化条件对热释电系数的影响很大,极化良好的晶体在室温下的热释电系数为2.2×10~(-8)C/cm~2·K。  相似文献   

7.
用动态法测量了相变热释电材料(Ba0.65Sr0.35)TiO3薄膜的热释电系数,并对相变热释电系数的计算进行了理论分析.先测量了传统热释电材料LiTaO3单晶薄片的热释电系数,温度信号和热释电电压存在90°相位差,热释电系数为2.1×10-8C cm-2K-1,与文献测量值、理论计算一致,说明测试系统真实可靠.用动态法测量了工作在1.5 V偏压下的(Ba0.65Sr0.35)TiO3薄膜,输出电压由DC电压和AC电压构成,前者由(Ba0.65Sr0.35)TiO3薄膜的漏电流引起,后者为热释电响应电压.热释电响应电压与正弦温度信号同相位,其振幅与正弦温度信号的振幅成正比.理论计算表明,动态法测量相变热释电材料时,热释电响应电压与温度信号同相位变化是由相变热释电材料的电容随温度信号的变化引起的.  相似文献   

8.
本文讨论了极化轴平行于衬底的铁电晶体薄片的介电系数和热释电系数,并导出了它们的表达式。计算了LiTaO_3、Pb_5Ge_3O_(11)和Sr_(0.5)Ba_(0.5)Nb_2O_6的部分夹持介电系数和热释电系数。结果表明:这三种材料的热释电探测器,边电极带衬底结构的介电性能和热释电性能优于面电极带衬底结构,前两种材料甚至优于自由悬空型结构的介电性能和热释电性能。  相似文献   

9.
铁电材料红外热释电系数测试研究   总被引:3,自引:0,他引:3       下载免费PDF全文
基于动态变温方法及间接热释电电流法的原理,设计并研制了一套已获专利授权的动态热释电系数测试系统。介绍了该系统的测量原理、设计方法及组成,用已知热释电系数值的锆钛酸铅(PZT)陶瓷及钽酸锂(LT)单晶作为参考样品对系统进行了调试,并对PZT、聚二氟乙烯(PVDF)及钛酸锶钡(BST)等几种常见的铁电薄膜材料的热释电系数进行了测试。结果表明,热释电系数测试值与参考值吻合很好,而且该系统具有控温精度高(±0.002 ℃)、噪声低(≤14 nV)、测试动态范围大(1×10-11~1×10-4 C·cm-2·K-1)等优点,它不仅能满足传统热释电模式工作的PZT系列材料热释电系数的测试需要,还可用于测量热释电-介电模式工作的BST系列材料的热释电系数。文中所开发的动态法热释电系数测试系统完全可满足未来铁电材料在红外探测应用领域的研究要求。  相似文献   

10.
唐华  龙勇  李金  武欢  何晔  李璐 《压电与声光》2021,43(3):406-412
该文总结了铌镁酸铅系弛豫铁电单晶材料的发展历程,铌镁酸铅系单晶材料的压电常数由最初的1540 pC/N提升至4000 pC/N,制备单晶的主要方法为改进的布里奇曼法.根据单晶的组分不同,工艺条件也有差别,在改进其性能的过程中其理论依据逐渐完善,弛豫铁电单晶高压电效应的根源是单畴剪切压电效应,在实际研究中可通过宏观或微观...  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

13.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

14.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

16.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

17.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

18.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.  相似文献   

19.
Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.  相似文献   

20.
An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.  相似文献   

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