3mm波雪崩管集成振荡器设计

描述了一种3mm雪崩管集成振荡器。该振荡器由雪崩二极管,微带谐振装置,鳍线过渡段组成。通过对雪崩管振荡器的理论分析,利用电路设计软件ADS与三维仿真软件HFSS仿真优化,设计出了频率为95GHz的雪崩管集成振荡器。     

砷化镓雪崩振荡器偏置振荡和稳定分析

一引言 1958年里德提出了雪崩二极管振荡器的理论,到1965年Johnston、Brand和Lowe分别在硅、砷化镓和锗的二极管中实现了微波振荡,至今这十多年来,从理论到器件的制造都发展到了相当完善的程度。目前雪崩二极管振荡器已成为很重要的微波功率源。从C波段一直到毫米波段都已经有产品,有些产品输出功率达到几瓦,实验室的水平就更高一些,比如砷化镓雪崩管在8千兆赫下输出大于8瓦,效率高达35％。在研制大功率、高效率砷化镓雪崩管振荡器中,人们发现了砷化镓雪崩二极管的偏     

应用介质谐振器构成微带集成耿氏振荡器的实验研究

——本文描述了介质谐振器的设计方法,着重阐述了应用介质谐振器构成微带集成耿氏振荡器的结构、基本理论和设计问题.在X波段,通过实验初步得到了9.56～10.70千兆赫频率范围内输出功率大于30毫瓦的介质集成振荡器.     

S波段电调谐TRAPATT振荡器

——本文讨论了TRAPATT振荡器电调谐的条件,提出了微带——波导耦合形式的TRAPATT电路,用插入波导中的变容二极管,使第三次谐波独立调谐以实现TRAPATT振荡器的电调谐.工作于S波段的电调TRAPATT振荡器,电调谐范围大于30MHz,而输出功率变化小于0.2分贝.     

3mm肖特基势垒二极管雪崩噪声源

介绍了3mm波段肖特基势垒二极管雪崩噪声源,其宽带超噪声比为10.5dB,它与反向电流呈线性关系。     

简讯

据报道,美国HP公司研制出一种环状双漂移区结构的雪崩二极管。这种器件可作为振荡器和放大器,其特点是工作效率高、噪声低,在X波段输出的脉冲功率为12瓦(连续功率为3瓦),效率为11％,占空比为25％。管壳电     

50千兆赫硅双漂移雪崩二极管

由离子注入精密制管技术制作的p~+pnn~+硅双漂移雪崩二极管,在毫米波波段可以获得良好的振荡性能,因而作为在此波段上有效的振荡器,广泛地进行了研究。我们对单漂移区硅雪崩二极管已经进行了研究,而且在30千兆赫和50千兆赫波段上,已经获得了较好的结果,二极管制造工艺几乎已能确定。因此,接着进行离子注入p~+pnn~(1+)结构的双漂移雪崩二极管的研究,得到了53千兆赫下,最大输出860毫瓦,最大效率12.6％的良好结果。下面详细地予以叙述。在二极管制造过程中,首先将里德模型的小信号理论推广到双漂移结构中,并把小信号电导和振荡效率近似地联系起来,进行了最佳设计。如果按照该最佳设计,则P层     

大功率同轴雪崩二极管振荡器

美帝雪尔凡尼亚公司制造的SYA—3206系列的可调x波段同轴雪崩二极管振荡器的最小连续输出功率为500毫瓦,功率变化小于1分贝,工作温度为-30℃到+71℃。要求70～100伏左右的单个直流电源,用单螺旋校整即可进行调谐。此振荡器是为雷达和通讯系统中发射机     

半导体微波能源

所谓微波能源,是指将直流功率变换为微波功率的装置.到目前为止,实际可用的、能够产生微波功率的半导体器件有五种,它们是晶体管振荡器和放大器,变抗二极管(包括变容二极管和阶跃恢复二极管)倍频器,隧道二极管振荡器,Gunn效应器件,雪崩渡越时间二极管(或称Read二极管).本文介绍这些半导体器件作为微波源的工作原理和发展状况.其中,隧道     

一种微波集成宽带变容管调谐体效应振荡器的设计

本文利用电抗补偿的概念对集成串联体效应振荡器进行电抗补偿,使调谐带宽增加。在C波段,相对调谐带宽达10％以上;输出功率大于30毫瓦;起伏小于3dB。给出了调谐带宽的解析表达式和振荡器电路的设计。 这种宽带集成体效应振荡器采用微带和同轴相结合的结构。变并联谐振为串联谐振,频率调整比较方便,在雷达和通信上得到了广泛的应用。     

A 40-GHz Digital Distribution Radio with a Single Oscillator

New 40-GHs band digital radio equipment is described. In the equipment we adopted a new circuit configuration consisting of a single IMPATT diode oscillator which functions as both transmitter frequency converter and receiver load oscillator simultaneously. The principal system design factors, a unique IMPATT diode oscillator mount configuration and test results are described. The compact radio equipment is designed so that it ensures excellent cost performance for communication systems in local trunk service, even in short hop applications resulting from rainfall attenuation to the new band.     

3mm稳频脉冲雪崩管振荡器设计

介绍一种3mm波脉冲雪崩管振荡器,采用顶部斜率可调的脉冲电流给雪崩管(IMPATT Diode)供电,应用高Q腔谐振稳频,具有振荡频率高,输出功率大,频率稳定性好等优点.     

八毫米脉冲IMPATT振荡器

本文简述了脉冲IMPATT器件的设计考虑和制造工艺以及振荡器的微波电路结构和脉冲调制器的原理。对脉冲偏置期间产生的频啁效应作了原理性说明,并提出了减小频啁带宽的方法。目前所研制的八毫米IMPATT振荡器最大的脉冲输出功率在34.2GHz下为15.7W。     

双漂移(P+PNN+)雪崩二极管的计算机辅助分析

本文报道了8mm硅双漂移雪崩二极管的计算机计算结果,并把双漂移器件与单漂移(P⁺NN⁺型)器件进行了比较,从而证实双漂移器件在输出功率和效率等方面都具有优越性,同时还研究了掺杂分布、温度、直流偏置和高频调制电压对器件特性的影响。本文为设计毫米波段双漂移雪崩二极管振荡器和放大器提供了理论数据。     

Computer-aided analysis of double drift region impatt diode

The results calculated by computer for the double drift region IMPATT diode oscillator on the 8 mm waveband are reported in this paper. A comparison between single and double drift devices concerning the power output and efficiency is given. The effect of doping profile, current density and RF voltage on the performances of these devices have also been investigated. The theoretical data of these double drift IMPATT oscillator and amplifier are provided.     

一种基于HP EESOF软件的IMPATT二极管非线性电路模型参数的提取方法

通过对雪崩二极管非线性电路模型参数数学表达式的分析，利用HPEESOF软件进行电路模型的计算机模拟，计算出雪崩管在非线性状态下的器件阻抗，从而为雪崩管振荡器的设计提供了重要的理论依据。     

High frequency noise properties of a double avalanche region (DAR) IMPATT diode

The high frequency noise properties of a double avalanche region (DAR) IMPATT diode consisting of two avalanche layers interspaced by a drift layer have been studied. In view of the fact that SDR IMPATT diode shows a high value of noise figure, one may think that the presence of two avalanche layers in DAR IMPATT diode may lead to a noise figure of the order of 2 or 3 times larger than that of the SDR (or SAR) IMPATT. However, from the study, it has been observed that the DAR IMPATT has the same order of noise as that of SDR IMPATT under operating condition. Since the DAR IMPATT diode with unequal avalanche layer width can be used as microwave oscillator with minimum coupling between the harmonically related frequencies [1], the device may be very useful in the microwave frequency range.     

Noise effect in oscillators using multiple active devices connected in series or in parallel

The effect of noise in an IMPATT or Gunn diode oscillator on a phase or frequency fluctuation can be reduced when the oscillator is constructed of multiple diodes connected in series, compared with the oscillator using a single diode.     

Nonlinear Behavior and Bias Modulation of an IMPATT Diode Oscillator

Experimental results of the nonlinear behavior of an IMPATT diode oscillator under free-running and bias-modulated conditions are presented and correlated with theoretical results. Amplitude and frequency behavior of a free-running IMPATT diode oscillator such as: 1) power-frequency characteristic, 2) jump and hysteresis, 3) temperature dependence, 4) harmonic content, and 5) electronic tuning characteristics are discussed. The bias-modulation properties and their relation to the free-running behavior are described. The effects of the operating point, external Q, and injection locking on the modulation properties are presented.