Elimination of Voids at Interface of <Emphasis Type="Italic">β</Emphasis>-SiC Films and Si Substrate by Laser CVD

Void-free β-SiC films were deposited on Si(001) substrates by laser chemical vapor deposition using hexamethyldisilane (HMDS) as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced (T_in), on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from <001> to random to <111> with increasing T_in. The surface showed a layer-by-layer microstructure with voids above T_in ? 773 K, and then transformed into mosaic structure without voids at T_in= 298 K. The mechanism of the elimination of voids was discussed. At T_in =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.     

Effects of annealing processes on Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> thin films

The Cu _x Si_1-x thin films have been grown by pulsed laser deposition (PLD) with in situ annealing on Si (001) and Si (111), respectively. The transformation of phase was detected by X-ray diffraction (XRD). The results showed that the as-deposited films were composed of Cu on both Si (001) and Si (111). The annealed thin films consisted of Cu + η”-Cu₃Si on Si (001) while Cu + η’-Cu₃Si on Si (111), respectively, at annealed temperature (T _a) = 300-600 °C. With the further increasing of T _a, at T _a= 700 °C, there was only one main phase, η”-Cu₃Si on Si (001) while η’-Cu₃Si on Si (111), respectively. The annealed thin films transformed from continuous dense structure to scattered-grain morphology with increasing T _a detected by field emission scanning electron microscope (FESEM). It was also showed that the grain size would enlarge with increasing annealing time (t _a).     

Effect of oxygen partial pressure on epitaxial growth and properties of laser-ablated AZO thin films

Al-doped ZnO (AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures (P _O2). The effect of PO2 on the crystal structure, preferred orientation as well as the electrical and optical properties of the films was investigated. The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure, showing a significant c-axis orientation. The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P _O2. At the optimum oxygen partial pressures of 10 - 15 Pa, the AZO thin films were epitaxially grown on c-sapphire substrates with the (0001) plane parallel to the substrate surface, i e, the epitaxial relationship was AZO (000 1) // Al₂O₃ (000 1). With increasing P _O2, the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly, which led to an enhancement in electrical conductivity of the AZO thin films. All the films were highly transparent with an optical transmittance higher than 85 %.     

Morphology study of oriented SmBCO film deposited by MOCVD

c-axis-oriented SmBa_2Cu_3O_7(SmBCO) films have been deposited on(100)- LaA1O_3(LAO)substrate by metal organic chemical vapor deposition(MOCVD) technique.The effects of deposition temperature(T_(dep)) and total pressure(P_(tot)) on the orientation and microstructure of SmBCO films were investigated.The orientation of SmBCO films transformed from α-axis to c-axis with increasing of T_(dep) from 900 to 1 100℃.At T_(dep)=1 050℃,SmBCO films had c-axis orientation and tetragon surface.At P_(tot)~(dep)=400-800 Pa and T_(dep)=1 050 ℃,totally c-axis-oriented SmBCO films were obtained.The R_(dep) of SmBCO films increased firstly and then decreased with increasing P_(tot).The surface of SmBCO films exhibited tetragon morphology at 1 050 ℃ and400 Pa.Maximum thickness of SmBCO film deposited was 1.2μm at P_(tot)= 600 Pa,and the corresponding R_(dep)was 7.2 μm·h~(-1).     

Enhanced Ferroelectric Polarization in Laser-ablated Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> Thin Films by Controlling Preferred Orientation

Polycrystalline Bi₄Ti₃O₁₂ thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/SiO₂/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi₄Ti₃O₁₂ thin films. The films with high fractions of a-axis and random orientations, i e, f (a-sxis) = 28.3% and f (random) = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm², respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization (2Pr = 35.5 μC/cm²) was obtained for the Bi₄Ti₃O₁₂ thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi₄Ti₃O₁₂ films.     

Electronic Structure and Optical Properties of LiBiO<Subscript>3</Subscript> Doped with V,Nb, and Ta

The crystal structure, band structure, density of states, Mulliken charge, bond population and optical properties for LiBi_1-xM_xO₃ (M=V, Nb, and Ta) were investigated using hybrid density functional theory. It was found that LiBiO₃ doped with V, Nb, and Ta presented distinctly stronger covalent interactions in M-O (M=V, Nb, and Ta) than Bi-O, thus resulting in mild distortion of the structure and facilitating the separation of photogenerated carriers. Furthermore, the hybridizations of Bi-6s, M-d (M=V, Nb, and Ta) and O-2p widened the valence and conduction bands, which promoted transmission of photogenerated carriers in the band edge and thus caused better photocatalytic performance.     

Synthesis and electrochemical behaviors of <Emphasis Type="Italic">α</Emphasis>-MoO<Subscript>3</Subscript> nanobelts/carbon nanotubes composites for lithium ion batteries

α-MoO₃ nanobelts/carbon nanotubes (CNTs) composites were synthesized by simple hydrothermal method followed by CNTs incorporating, and characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Cyclic voltammogram (CV), electrochemical impedance spectroscopy (EIS), and galvanostatic charge/discharge testing techniques were employed to evaluate the electrochemical behaviors of α-MoO₃ nanobelts /CNTs composites. The results exhibited that compared to bare α-MoO₃ nanobelts, the α-MoO₃ nanobelts/CNTs composites have better electrochemical performances as cathode materials for lithium ion battery, maintaining a reversible specific capacity of 222.2 mAh/g at 0.3 C after 50 cycles, and 74.1% retention of the first reversible capacity. In addition, the Rct value of the α-MoO₃ nanobelts/ CNTs is 13 Ω, much lower than 66 Ω of the bare α-MoO₃ nanobelts. The better electrochemical performances of the α-MoO₃ nanobelts /CNTs composites can be attributed to the effects of the high conductive CNTs network.     

Density function theory study of electronic,optical and thermodynamic properties of CaN<Subscript>2</Subscript>, SrN<Subscript>2</Subscript> and BaN<Subscript>2</Subscript>

We put forward a first-principles density-functional theory about the impact of pressure on the structural and elastic properties of bulk CaN₂, SrN₂ and BaN₂. The ground state properties of three alkaline earth diazenides were obtained, and these were in good agreement with previous experimental and theoretical data. By using the quasi-harmonic Debye model, the thermodynamic properties including the debye temperature Θ _D, thermal expansion coefficient α, and grüneisen parameter γ are successfully obtained in the temperature range from 0 to 100 K and pressure range from 0 to 100 GPa, respectively. The optical properties including dielectric function ε(?), absorption coefficient α(?), reflectivity coefficient R(?), and refractive index n(?) are also calculated and analyzed.     

Effect of Nd<Subscript>2</Subscript>Fe<Subscript>14</Subscript>B/<Emphasis Type="Italic">α</Emphasis>-Fe nanocomposite permanent magnets with a combined Co and Nb additions

Influence of Co+Nb on the Nd₈Fe₈₂Co₃Nb₁B₆ nanocomposite magnets was investigated by adding Co element combined with Nb element. Results show that the high temperature stability of two phases is increased. Adding Co+Nb could improve the glass forming ability of the alloy, reduce the size of grains, increase the exchange coupling ability of two phases, and obviously increase the magnetic properties of the alloy. The optimal magnetic properties are B _r=1.14 T, H _cj=320 kA/m, (BH)max-109.3 kJ/m³.     

Effects of electrode on resistance switching properties of ZnMn<Subscript>2</Subscript>O<Subscript>4</Subscript> films deposited by magnetron sputtering

ZnMn₂O₄ films for resistance random access memory (RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn₂O₄ films were investigated. The ZnMn₂O₄ films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching (BRS) behavior dominated by the space-charge-limited conduction (SCLC) mechanism in the high resistance state (HRS) and the filament conduction mechanism in the low resistance state (LRS), but the ZnMn₂O₄ films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel (P-F) conduction mechanism in both HRS and LRS. Ag/ZnMn₂O₄/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 10⁶ seconds. However, the highest R _HRS/R _LRS ratio of 10⁴ and the lowest V _ON and V _OFF of 3.0 V have been observed in Ag/ZnMn₂O₄/Pt device. Though the Ag/ZnMn₂O₄/n-Si device also possesses the highest R _HRS/R _LRS ratio of 10⁴, but the highest values of V _ON,V _OFF, R _HRS and R _LRS, as well as the poor endurance and retention characteristics.     

Influence of Sodium Carbonate Amount on Crystalline Phase and Structure Stability for Doping Nickel Hydroxide

Alpha nickel hydroxide has better performances than commercial beta nickel hydroxide. However, the main defect is that α-phase is difficult to synthesize and easily transformed to β-phase Ni(OH)_2 upon aging in a strong alkaline solution. In this study, the Al-Co, Al-Yb, Yb-Co and Al-Yb-Co multiple doping was used respectively. By controlling the amount of sodium carbonate, the α-Ni(OH)_2 was prepared by ultrasonic-assisted precipitation. And the influence of sodium carbonate on the crystalline phase and structure stability for alpha nickel hydroxide was studied. The results demonstrate that, with increasing amount, the biphase nickel hydroxide transforms to pure alpha nickel hydroxide gradually, and the structure stability is also improved. When the amount of sodium carbonate is 2 g, the sample still keeps α-Ni(OH)_2 after being aged for 30 days, for Al-Yb-Co-Ni(OH)_2. And when the amount is less than 2 g, the phase transformations exist in the samples with different extents. These results demonstrated that the amount of sodium carbonate is a critical factor to maintain the structural stability of α-Ni(OH)_2.     

A statistical approach to fit Gaussian part of full-energy peaks from Si(PIN) and SDD X-ray spectrometers

A new statistical fitting approach,named Statistical Distribution-Based Analytic(SDA)method,is proposed to fit single Gaussian-shaped Kαand KβX-ray peaks recorded by Si(PIN)and silicon drift detector(SDD).In this method,we use the discrete distribution theory to calculate standard deviation of energy resolutionσ.The calibration ofσand energy(E)for two detectors between the energy ranges of 4.5–26 keV are also completed by measuring characteristic X-ray spectra of nineteen types of pure elements.With the spectrum fraction(SF)parameter proposed in this paper,the SDA method can be used to resolve overlapping peaks.In measured spectra,the Gaussian part of X-ray peaks can be fitted by a Gaussian function with two parameters,σand SF.This new fitting approach is simpler than traditional methods and it achieves relatively good results when fitting the complex X-ray spectra of national standard alloy samples detected by Si(PIN)and SDD detectors.The2r values are obtained for each spectrum to assess fitting results,and the SDA fitting method gives a preferable fit for the SDD detector.     

UV disinfection of Staphylococcus aureus in ballast water: Effect of growth phase on the disinfection kinetics and the mechanization at molecular level

This work aimed to study the inactivate kinetics of Staphylococcus aureus (S. aureus) in artificial seawater by ultraviolet radiation, establish relationships between model parameters and growth phases, and explain the mechanization of UV disinfection by molecular biological detection. Investigations were carried out for the validation of Chick-Watson, Collins-Selleck, Hom and Biphasic models when S. aureus was in stationary phase (t=14 h). The results showed that the Biphasic kinetic model’s R² turned out to be the highest one (R²=0.9892) and RMSE was less than 0.5 (RMSE =0.2699). The Biphasic kinetic model was better fit for ultraviolet disinfection than the other three models under the circumstance of this experiment and chosen to fit the ultraviolet disinfection curves for microorganisms at three growth phases. The sensitivity of microorganisms under ultraviolet radiation was in the following order: in exponential phase > in stationary phase > in lag phase by comparing the indexes of the Biphasic model (k₁ and x). Besides, agarose gel electrophoresis was used in order to directly assess the damage to DNA of microorganisms that were exposed to the different dose of UV irradiation. The results revealed that DNA damage caused by UV radiation was an important reason for the microorganism inactivation and as the UV dose increased, there was greater damage caused in DNA.     

Reaction mechanism and microstructure evolution of reaction sintered <Emphasis Type="Italic">h</Emphasis>-BN

Hexagonal boron nitride ceramic (h-BN) based on the nitridation of B powders was obtained by reaction sintering method. The effects of sintering temperature on the mechanical properties and microstructure of the resultant products were investigated and the reaction mechanism was discussed. Results showed that the reaction between B and N₂ occurred vigorously at temperatures ranging from 1 000 °C to 1 300 °C, which resulted in the generation of t-BN. When the temperature exceeded 1 450 °C, transformation from t-BN to h-BN began to occur. As the sintering temperature increased, the spherical particles of t-BN gradually transformed into fine sheet particles of h-BN. These particles subsequently displayed a compact arrangement to achieve a more uniform microstructure, thereby increasing the strength.     

Formation of Epitaxial Heavy-doped Silicon Films by PECVD Method

Plasma-enhanced CVD(PECVD) epitaxy at 200℃ was used to deposit heavy doped n-type silicon films. Post-annealing by rapid thermal processing was applied to improve the properties of the epitaxial layer. By analyzing the Raman spectra and the imaginary part of the dielectric constant spectra of the samples, it was found that high-quality heavy-doped epitaxial n-type silicon layer can be obtained by optimizing the parameters of the PECVD depositing process. Reducing the electrodes distance of the PECVD had a great effect on the crystallzation of the epitaxialed n-type silicon films. Sillicon films with high-crystallization were obtained with the electrodes distance of 18 mm. Post-annealing process can improve the crystallization and reduce the resistance of the epitaxial films. In our research, it was found that the sheet resistance(R_□) of the post-annealed films with thickness of about 50 nm has a simple relationship with RPH3/SiH_4(ratio of the flow rate of PH_3 and SiH_4) of the PECVD processing: R_□=-184-125 lg(R_(PH3/SiH4)). In the end, high-quality epitaxial n-type silicon film was obtained with R_□ of 15 Ω/□ and thickness of ~50 nm.     

Composition dependence of phase structure and electrical properties of (1−y)Bi1−xNdxFeO3−yBiScO3 ceramics

In this work, we have studied a new lead-free ceramic of(1-y)Bi_(1-x)Nd_xFeO_(3-y)BiScO_3(0.05≤x≤0.15 and 0.05≤y≤0.15) prepared by a conventional solid-state method, and the influences of Nd and Sc content on their phase structure and electrical properties were investigated in detail. The ceramics with 0.05≤x≤0.10 and 0.05≤y≤0.15 belong to an R3 c phase, and the rhombohedral-like and orthorhombic multiphase coexistence is established in the composition range of 0.125≤x≤0.15 and y=0. The electrical properties of the ceramics can be enhanced by modifying x and y values. The highest piezoelectric coefficient(d33~51 p C/N) is obtained in the ceramics with x=0.075 and y=0.125, which is superior to that of a pure BiFeO_3 ceramic. In addition, a lowest dielectric loss(tan δ~0.095%, f=100 k Hz) is shown in the ceramics with x=0.15 and y=0 due to the involvement of low defect concentrations, and the improved thermal stability of piezoelectricity at 20–600oC is possessed in the ceramics. We believe that the ceramics can play a meaningful role in the high-temperature lead-free piezoelectric applications.     

YIG thin film for RF integrated inductor

The yttrium iron garnet(YIG) thin films prepared by the sol-gel method and rapid thermal annealing(RTA) process for integrated inductor are investigated. The X-ray diffraction(XRD) results indicate that the YIG film annealed above 650 ℃ is poly-crystalline with single-phase garnet structure. Moreover, it can be found that the initial permeability μi, saturation magnetization M_S and coercivity H_c of these YIG films increase with increasing RTA temperature. Low temperature annealing after crystallization can further improve the magnetic properties of YIG film. Thereby, a planar integrated inductor in the presence of Si substrate/SiO_2 layer/Y_(2.8)Bi_(0.2)Fe_5O_(12) thin film/Cu spiral coil structure is fabricated successfully by the standard IC processes. Due to the magnetic enhancement originated from YIG film, the inductance L and quality factor Q of the inductor with YIG film are improved in a certain frequency range.     

Probabilistic composition of cone-based cardinal direction relations

Composition tables play a significant role in qualitative spatial reasoning (QSR). At present, a couple of composition tables focusing on various spatial relations have been developed in a qualitative approach. However, the spatial reasoning processes are usually not purely qualitative in everyday life, where probability is one important issue that should be considered. In this paper, the probabilistic compositions of cone-based cardinal direction relations (CDR) are discussed and estimated by making some assumptions. Consequently, the form of composition result turns to be {(R ₁,P ₁), (R ₂,P ₂), ..., (R _n ,P _n )}, where P _i is the probability associated with relation R _i . Employing the area integral method, the probabilities in each composition case can be computed with the assumption that the target object is uniformly distributed in the corresponding cone regions.     

Crystallization behavior of polymer derived silicon carbide sintered through microwave heating technique

A self-crosslinkable liquid highly branched polycarbosilane(LHBPCS) with 5.07% vinyl group and a C/Si ratio of 1.33 was used as the precursor to prepare Si C ceramic material. Microwave heating technique and conventional heating method were applied for the heating treatment process. It was found that, compared with conventional heating method, microwave heating technique could enhance the crystallinity of Si C ceramic material with small grain size at much lower curing temperature and within shorter time. In addition, the SiO_2 additive could lead to less α-Si C and excess carbon, but worsen the crystallinity of β-Si C in the final samples.     

Effect of pH on crystallization of nanocrystalline zirconia in a microwave-hydrothermal process

Nanocrystalline zirconia (ZrO₂) was synthesized using a microwave-hydrothermal process. The effect of pH on the crystallization of the ZrO₂ powders was investigated. The phase and microstructure of ZrO₂ powders were examined using X-ray diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM). Results show that pure m-ZrO₂ can be obtained at low pH (pH<2). Pure t-ZrO₂ is formed at pH = 7 and 14. The size of the ZrO₂ crystals is in the range of 8-26 nm and decreases with increasing pH. The formation of m-ZrO₂ results from the precipitation of ZrO₂ from solution. The t-ZrO₂ is formed through the in-situ structural rearrangement of amorphous Zr(OH) _x O _y . The stabilization of t-ZrO₂ is attributed to the small crystal size and the adsorption of hydroxy ions on the surfaces of the crystals.