二氧化钒薄膜的制备及性能表征

通过激光脉冲沉积法,分别在Csapphire和R—sapphire衬底上制备了单相二氧化钒（VO2）薄膜。用x射线衍射法表征了不同实验条件下制备的二氧化钒薄膜的结构性质,分析表明在600℃,10^-2torr的氧气分压下,生长15min可得到单相的二氧化钒（VO2）薄膜;重点研究了激光能量对薄膜电学性质的影响,实验结果表明激光能量在500-600MJ对制备的二氧化钒薄膜具有最好的电学性质。     

光学薄膜,光电子薄膜及光学有机薄膜

本文评介了新技术，新材料和新工艺在薄膜技术的应用及其最新发展。     

纳米VO2多晶材料的低温相变和随机阻抗网络模型

制备了纳米VO2多晶薄膜材料,其相变温度为35℃,实验测量了它的电阻-温度(R-T)曲线和热滞回线,并用随机阻抗网络模型进行了R-T曲线和热滞回线模拟,两者显示出结果一致,表明在低温相变温度35℃下,随机阻抗网络模型适用于纳米VO2多晶薄膜R-T曲线和热滞回线.此外,给出了VO2多晶材料在半导体区和金属区的简化随机阻抗网络模型的电阻公式.     

光记录酞菁薄膜

本文研究了酞菁薄膜在红外区域的吸收光谱，报导了该酞菁薄膜的光记录特性．     

Micromachined Uncooled IR Bolometer Linear Array Using VO2 Thin Films

Mixed vanadium oxide thin films, as VO₂ for the main composition are materials for uncooled microbolometer due to their high temperature coefficient of resistance (TCR) at room temperature. This paper describes the design and fabrication of 8-element linear array IR uncooled microbolometers using the films and micromachining technology. The characteristics of the array is investigated in the spectral region of 8–12 μm. The fabricated detectors exhibit responsivity of up to 10 KV/W, typical detectivity of 1.89×10⁸ cmHz^1/2/W, and thermal time constant of 11 ms, at 296 K and at a frequency of 30 Hz. Furthermore, The uncorrected response uniformity of the linear array bolometers is less than 20%.     

光学薄膜及其应用

本文介绍了光学薄膜和光电子器件用薄膜的技术和应用，以及真空镀膜及其应用结果。     

微显示技术与光学薄膜

讨论了光学薄膜在LCD、LCoS及DLP三种微显示光引擎中的应用。同时也简述了相应的光学薄膜技术的进展。     

基于全光谱拟合法的VO2薄膜光学常数计算

为实现对VO2薄膜光学常数的测量,本文在全光谱拟合法的基础上,首先利用导纳矩阵法推导出透射率T与薄膜厚度d、折射率n以及消光系数k的函数关系,然后利用单纯形法得到其优化函数.最后采用Matlab编程方法对低温态、高温态VO2薄膜的红外透射率进行了全光谱拟合,得到折射率和消光系数等VO2薄膜光学常数的拟合曲线.结果表明:拟合曲线与已有研究结果及实测曲线基本吻合.采用全光谱拟合方法得到的光学常数能较准确的对VO2薄膜进行描述,为最佳膜厚设计提供了依据.此外,为更简便地描述VO2薄膜的光学常数,本文还引入了Cauchy色散模型方程,对全光谱拟合方法得到的中远红外波段(2.5~15μm)的光学常数结果进行了拟合.     

DDI法测薄膜光学常数

双光束双波长激光干涉（ＤＤＩ）法采用自行设计的可调双波长氦氖激光器作光源，可在同一光路中通过两次测量获得薄膜样品两个波长（０．６３３μｍ，３．３９μｍ）下的光学常数，即折射率、消光系数和厚度。论述了测量原理、测量装置和测量结果。     

二极管泵浦固体激光器使用的光学薄膜

二极管泵浦固体激光器结合了激光二极管和固体激光器的诸多优点,研究了人员对之兴趣不断增长,相应地向薄膜领域提出了挑战,文中分析了如何通过对称膜系的等效折射率概念消除干涉截止滤光片的通带波纹。利用截止滤光片倾斜使用时的偏振效应,制造了单块式准平面环形激光器的输出镜。制作的膜片用于激光器,取得了较好的结果。     

Optical and Electrical Properties of Polyimide Thin Films Doped-Cu-phthalocyanine Polymerized by Vapor Phase Deposition

Using Cu-phthalocyanine(CuPc),4,4’-diaminodiphenyl ether and pyromellitic dianhydride as monomer materials, polyimide(PI) thin films doped-CuPc have been prepared onto glass substrate by vapor phase co-deposition polymerization under a vacuum of 2×10~(-3)Pa and thermal curing of polyamic acid film in at temperature of 150-200℃ for 60min. In this process, the polymerization can be carried out through controlling the stoichiometric ratio, heating time and deposition rates of the three monomers. IR spectrum identifies the designed chemical structure of the polymer. The absorption of polyimide doped-CuPc is very intense in vis-range and near-infrared by UV-Vis spectrum. And, the PI films doped-CuPc polymerized by vapor phase deposition have uniformity, fine thermal stability and good nonlinear optical properties, and the third-order optical nonlinear susceptibility χ~((3)) with degenerate four-wave mixing can be 1.984×10~(-9)ESU.     

磁控溅射结合快速热处理制备相变氧化钒薄膜

采用直流对靶磁控溅射结合快速热处理工艺制备了具有金属-半导体相变特性的氧化钒(VOx)薄膜。利用XRD,XPS和SEM对薄膜结晶结构、薄膜中V的价态与组分及表面微观形貌进行分析,利用四探针测试法及太赫兹时域频谱系统对薄膜的电学和光学特性进行测量。结果表明:新制备VOx薄膜以非晶态V2O5为主;350℃,30 s快速热处理后,薄膜中V的整体价态降低,表面颗粒分布更加致密;500℃,30 s快速热处理后,薄膜中VO2(002)向单斜结构的VO2(011)转变,VO2(011)占主要成分,薄膜显示出明显的金属-半导体相变特性,方块电阻下降达到3个数量级,太赫兹透过率下降接近70%,热致相变性能良好。     

氧化钒薄膜的制备及其光电特性研究

采用一种新工艺在Si和Si3 N4衬底上制备了性能优良的氧化钒薄膜 ,并对其微观结构和光电特性进行了研究。测试结果表明采用新工艺所制备的氧化钒薄膜在相变前后电阻率变化达到 3个数量级 ,红外透过率在相变前后改变达到 6 0 %。     

光波导用TiO2/SiO2复合薄膜的制备及其性能研究

用离子自组装成膜技术制备了用作光波导器件的TiO2／SiO2复合薄膜，介绍了薄膜光学常数的测定方法，并研究了光波导的波导特性．结果表明随着TiO2含量的增大，光波导的折射率增加；但同时光波导损耗也将发生变化，一般TiO2占10％时，薄膜的波导损耗较低．在更高的含量范围内，必须使TiO2分散．     

Effect of the Structure and Valence State on the Properties of VO2 Thin Films

VO2 thin films with good switching properties were prepared by controlling the annealing time and the annealing temperature in a vacuum system.The structural,optical and electrical properties of the samples were cahracterized by using XRD,XPS,UV-VIS and electrical measurements.The witching parameters of VO2 thin film were investigated too.The results indicate that before and after phase transition the resistance of VO2 thin films changes aobut three orders of magnitude,the variation of film transmittance of 40% has been carried out with the absorptivity switching velocity of about 0.2607/min at 900 nm.The structural property of samples has been improved but the phase-transition properties have been decreased by increasing the annealing time and annealing temperature.The valence of V ions and the structure of samples have great effect on phase transition properties of VO2 thin films.Discussion on the effecs of annealing time and annealing temperature on the phase-transition temperature and hysteresis width shows that the best reasonable annealing tiem and annealing temperatre can be achieved.     

照明光学薄膜的开发和应用

照明用光学薄膜有许多种类，近来得到迅速的开发。本文介绍照明光学薄膜的制造技术和对它们的开发及应用。     

平面反射镜光学薄膜的制备

以薄膜原理为基础,通过Essential Macleod软件进行膜系设计.采用电子束加热蒸发的镀膜方式,利用设计工装制备了介质ZrO2-SiO2高反射膜层和金属铝反射膜层.介质高反膜层在1.064μm波长处的反射率达到95%,金属铝反射膜层的在3μm～5μm波段内的平均反射率超过95%.膜层的技术指标和环境适应性能具有优质的质量.     

Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control

Nanoscale morphology of vanadium dioxide (VO₂) films can be controlled to realize smooth ultrathin (<10 nm) crystalline films or nanoparticles with atomic layer deposition, opening doors to practical VO₂ metal‐insulator transition (MIT) nanoelectronics. The precursor combination, the valence of V, and the density for as‐deposited VO₂ films, as well as the postdeposition crystallization annealing conditions determine whether a continuous thin film or nanoparticle morphology is obtained. It is demonstrated that the films and particles possess both a structural and an electronic transition. The resistivity of ultrathin films changes by more than two orders of magnitude across the MIT, demonstrating their high quality.