新产品与新技术（5）

采用LCP的多层电路板技术实用化瑞士的挠性印制板制造企业Diconecs公司成功使用液晶聚合物(LCP)材料制作多层印制板,并达到实用化。LCP作为印制板基材,适应电子信号高频高速传     

新产品与新技术（40）

确保高温安装时稳定的印制板基材 日本利昌公司开发了一种新CCL基材“CS．3666X”,特点是印制板在高温安装时不会出现弯曲变形,在250℃高温下维持19GPa弹性率,对于高温的尺寸稳定性好,热膨胀系数（CTE）X／Y／Z方向为10／11／27（10—6／℃）,同时铜箔结合力也可靠。目前许多基材为确保高弹性率和低热膨胀系数,会在基材中添加二氧化硅无机材料,这会影响印制板制造中钻孔等加工性。     

铁基芯印制板国外发展综述

八十年代以来,电子设备朝着小型化、轻量化、多功能、高可靠性方向发展,大规模集成电路,超大规模集成电路高密度地安装在印制板上,散热便成为一大难题。而常用的印制板是采用增强的环氧或酚醛树脂绝缘的基材与铜箔一起压制的覆铜箔板,人们不得不寻求新的基材来制作印制板。近年来由于金属基芯印制板具有好的散热性、尺寸稳定性、耐热性和耐燃性、良好的磁屏蔽性和电磁特性(铁芯印制板),以及可以制成挠性金属基芯     

微波材料选用及微波印制电路制造技术

2．微波印制板材料介绍 2．1概述 众所周知，印制板的基本性能、加工特性及其使用可靠性，在很大程度上依赖于基材或覆铜箔板材料。对于高频微波印制板来说，所选用的覆铜箔板基材，与常规所采用的FR-4覆铜箔板材料，是完全不同的。     

电路板用低介电纤维布

文章介绍了电路板用的低介电纤维及其制作纤维布和电路板基材的实验。通过将环烯烃共聚物（COC）纤维与玻璃纤维结合在独特的混合布中制成低介电（εr3．08,Dk0．013）电路板基材;将混合布中环烯烃共聚物纤维熔化构成树脂的一种成分,制成εr3．25,Dk0．0013电路板基材;将含环烯烃共聚物纤维混织布涂上独特的低介电树脂制成εr2．8,Dk0．0009电路板基材的试验,表明环烯烃共聚物纤维布是一种新型的性能优异的电路板增强材料。     

挠性印制板基材的技术要求

介绍挠性印制板基材的技术要求.     

低介电常数和低介质损耗覆铜板材料的介绍

随着先进通讯设备和技术的发展,广泛应用于通讯领域的各种高频电子设备的需求也在飞速增长.为满足高频信号的传输,高传输速度和高频低损耗的需求,各种低介电常数(Dk)和低介质损耗(Df)的覆铜板基材也在不断的发展中.目前低介电常数和低介质损耗的板材通常使用氰酸脂、苯乙烯马来酸酐、PP0/APPE、PTFE、PI或他们的混合物来制造,还可以结合使用低介电常数、低介质损耗的玻璃纤维布来生产.文章主要针对高频电路的特点、板材实现低Dk/Df的方法及相应的一些表征方式与计算方法做了一些介绍.     

印制电路板用低介电纤维布

玻璃纤维由于它的介电常数高和损耗大，通常只作为普通印制电路基板的增强材料。本文介绍了可用于微波电路基板的低介性能（εr2．35，Dk0．00007）的新型增强纤维-环烯烃共聚物纤维及其应用。通过将环烯烃共聚物纤维与玻璃纤维结合在独特的混合布中制成εr3．08，Dk0．013印制电路板基板；将混合布中环烯烃共聚物纤维熔化构成树脂的一种成分，制成εr3．25，Dk0．0013印制电路板基材；通过将含环烯烃共聚物纤维的混织布涂上独特的低介电树脂制成εr2．8，Dk0．0009印制电路板基材的试验，表明环烯烃共聚物纤维是适应当今电子技术发展要求，制作优异介电性能印制电路基板的新型增强材料，用环烯烃共聚物纤维可制出比目前最好的低介电基材质量更轻、介电性能、机械性能更有竞争力的基材。     

印制电路词汇（21）

1186 rigid single-sided printed board:刚性单面印制板 仅使用刚性基材的单面印制电路板或单面印制线路板。1187 rigid-flux double-sided printed board:刚挠双面印制板 既有刚性基材又有挠性基材组合的双面印制电路板或双面印制线路板。     

新产品与新技术(59)

涂覆金刚石涂层的钻头与铣刀由于要适应印制板无铅装配和高稳定性等要求,会在基材中添加氧化硅等无机填料在变化,这使基材硬度增加而影响到PCB机械加工的硬质合金刀具的性能和寿命。为提高刀具寿命和加工效率,德国GCT公司采取硬质合金刀具表面涂膜技术,应用化学真空沉积(CVD)工艺在     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.