Performance improvement of dual processed perovskite solar cell—acid‐modified ZnO nanorods with Cl‐doped light harvesting layer

Effect of ZnO nanorod surface on fabricating the perovskite solar cell and its performance were studied. Varied thickness of ZnO nanorod arrays with rough surface condition were achieved through the control of hydrothermal growth time and acid treatment. Samples based on modified ZnO nanorod arrays exhibit an impressive increase on the open‐circuit voltage (V_oc) and fill factor (FF) compared with the untreated ones. Further research onto the surface topography and electrochemical impedance spectroscopy test indicates that the improvement should be attributed to the suppression of the charge recombination rate at the ZnO nanorod/CH₃NH₃PbI₃ interface. In order to enhance the short‐circuit current density (J_sc) performance one step further, Cl‐doped perovskite crystal was introduced into the cell. Because of its longer electron diffusion length, an impressive J_sc is received. The final combination of the two methods with the optimized thickness of the ZnO nanorod brought a total power conversion efficiency of 13.3% together with V_oc~0.92 V, J_sc~23.1 mA/cm², and FF~63%. This work highlights the importance of the surface morphology of the electron transport layer and its interface contact with the light absorbing layer in a solar cell structure. Copyright © 2017 John Wiley & Sons, Ltd.     

Enhancement in the performance of dye-sensitized solar cells containing ZnO-covered TiO2 electrodes prepared by thermal chemical vapor deposition

A ZnO-covered TiO₂ (denoted as ZnO/TiO₂) film was prepared by incorporating a small quantity of particulate ZnO in a TiO₂ matrix by thermal chemical vapor deposition. When used in a dye-sensitized solar cell, an enhancement was observed in both short-circuit photocurrent (J_sc) and open-circuit voltage (V_oc) by 12% and 17%, respectively, relative to those of a cell containing a bare TiO₂ film. The observed J_sc enhancement is attributed to the increase in the surface area of the ZnO/TiO₂ film, and the V_oc enhancement to the formation of a potential barrier by ZnO at TiO₂/electrolyte interface. The films were characterized by FE-SEM, EDX, and XRD.     

Improved Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer

A comparative study of the cell performance of CIGS thin-film solar cells fabricated using ZnO:Al and ZnO:B window layers has been carried out. ZnO:B films were deposited by RF magnetron sputtering using an undoped ZnO target in a B₂H₆–Ar gas mixture. The short-circuit current (J_sc) was found to improve upon the replacement of the ZnO:Al layer with ZnO:B layers. This improvement in J_sc is attributed to an increase in quantum efficiency due to the higher optical transmission of the ZnO:B layer in the near-infrared region. The best cell fabricated with a MgF₂/ZnO:B/i-ZnO/CdS/CIGS/Mo structure yielded an active area efficiency of 18.0% with V_oc=0.645 V, J_sc=36.8 mA/cm², FF=0.76, and an active area of 0.2 cm² under AM 1.5 illumination.     

Effect of a redox electrolyte in mixed solvents on the photovoltaic performance of a dye-sensitized solar cell

The effect of the iodide/triiodide redox electrolyte in various organic solvents on the photoelectrochemical properties of bis(tetrabutylammonium) cis-bis(thiocyanato)bis(4-carboxy-2,2′-bipyridine-4′-carboxylato)ruthenium(II)-sensitized nanocrystalline TiO₂ solar cells was studied. Solvents with large donor numbers dramatically enhanced the open-circuit voltage (V_oc), but usually reduced the short-circuit photocurrent density (J_sc). For a mixed solvent of tetrahydrofuran (THF) and acetonitrile, V_oc increased and the fill factor decreased with increasing THF concentration, but J_sc remained relatively constant. As the partial charge of the N or O atom of the solvent molecule increased, V_oc increased, but J_sc was unchanged up to a certain value of the partial charge (for THF, −0.46). For cells using 0.3 M 4-tert-butylpyridine and 20 vol% THF in the electrolyte, a short-circuit photocurrent density of 18.23 mA cm⁻², an open-circuit voltage of 0.73 V, a fill factor of 0.73, and an overall conversion efficiency of 9.74% were obtained.     

Electrical and photovoltaic response of bulk hetero-junction device made from poly (3-phenyl azo methine thiophene) (PPAT) and 1, 1′-diallyl substituted 4, 4′-dipyridine (DADP)

Electrical and photovoltaic properties of donor–acceptor composite system comprised of poly (3-phenyl azo methine thiophene) (PPAT) and 1, 1′–diallyl substituted 4, 4′-dipyridine (DADP) were investigated. A significant enhancement of photocurrent was observed when PPAT was blended with DADP. The increase in photocurrent has been explained in terms of efficient charge separation that resulted from the transfer of photo-excited electrons from PPAT to DADP. The strong quenching of fluorescence of PPAT was caused by the presence of DADP that indicates the photo-induced charge transfer from PPAT to DADP. The open circuit voltage (V_oc) generated in the device is independent of the variation of work function of negative metal electrode that has been explained in terms of Fermi level pinning between DADP and metal via surface charges. The electrical characteristics of ITO/PPAT: DADP/Al photovoltaic device were determined by analyzing the dependence of short circuit photocurrent density (J_sc) and V_oc under illumination at different temperatures. The V_oc decreases almost linearly with increasing temperature, while short-circuit photocurrent increases logarithmically with temperature and saturates at higher temperature above 330 K. This dependence of J_sc and V_oc on temperature has been discussed in terms of possible mechanism that involves the photovoltage generation and charge carrier transport in the device under thermally activated state. The photovoltaic device made from PPAT: DADP blend has shown three times higher photosensitivity than that of made from pure PPAT.     

A comparison of fluorine tin oxide and indium tin oxide as the transparent electrode for P3OT/TiO2 solar cells

Open circuit voltage (V_oc) and other photovoltaic parameters from fluorine tin oxide (FTO) P3OT/TiO₂ composite solar cells have been investigated in comparison with those from the indium tin oxide (ITO) devices with the same device structure and fabrication process. From the experimental results, the performance of FTO-based devices is better than that of ITO devices in terms of V_oc, short circuit current density (J_sc), and power conversion efficiency. The origin of V_oc and the higher V_oc of FTO can be explained and estimated by metal–insulator–metal model with a non-ohmic cathode contact.     

A suitable deposition method of CdS for high performance CdS-sensitized ZnO electrodes: Sequential chemical bath deposition

A suitable deposition method of CdS is necessary for the high performance CdS-sensitized ZnO electrodes. In this paper, chemical bath deposition (CBD) and sequential chemical bath deposition (S-CBD) methods were used to deposit CdS on ZnO mesoporous films for ZnO/CdS electrodes. The analysis results of XRD patterns and UV-vis spectroscopy indicated that CBD deposition method leaded to the dissolving of ZnO mesoporous films in deposition solution and thickness reduction of ZnO/CdS electrodes. Absorption in visible region by the ZnO/CdS electrodes with CdS deposition by S-CBD was enhanced as deposition cycles increased due to the stability of ZnO mesoporous films in the S-CBD deposition solutions. The results of photocurrent-voltage (I-V) measurement showed that the performance of ZnO/CdS electrodes with CdS deposition by CBD first increased and then decreased as deposition time increased, and the greatest short-circuit current (J_sc) was obtained at the deposition time of 4 min. The performance of ZnO/CdS electrodes with CdS deposition by S-CBD increased as deposition cycles increased, and both open-circuit voltage (V_oc) and J_sc were greater than those electrodes with CdS deposition by CBD when the deposition cycles of S-CBD were 10 or greater. These results indicated that S-CBD is a more suitable method for high performance ZnO/CdS electrodes.     

Influence of aminothiazole additives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized nanocrystalline TiO2 solar cell performance

The influence of aminothiazole additives in acetonitrile solution of an I⁻/I₃⁻ redox electrolyte on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′- bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics were investigated under AM 1.5 (100 mW/cm²) for nine different aminothiazole compounds. The aminothiazole additives tested had varying influences on the solar cell performance. Most of the additives enhanced the open-circuit photovoltage (V_oc), but reduced the short circuit photocurrent density (J_sc) of the solar cell. Both the physical and chemical properties of the aminothiazoles were computationally calculated in order to determine the reasons that the additive influenced solar cell performance. The larger the calculated partial charge of the nitrogen atom in the thiazole, the higher the V_oc value. The V_oc value increased as the dipole moment of aminothiazoles in acetonitrile increased. Moreover, the V_oc of the solar cell also increased as the size of the aminothiazole molecules decreased. These results suggest that the electron donicity of the aminothiazole additives influenced the interaction with the TiO₂ photoelectrode, which altered the dye-sensitized solar cell performance.     

Anchorage of N3 dye-linked polyacrylic acid to TiO2/electrolyte interface for improvement in the performance of a dye-sensitized solar cell

A synthetic route was developed to link N3 dye to polyacrylic acid (PAA) using ethylenediamine (en) as the linker. The resulting complex, PAA–en–N3, was then coated onto a TiO₂ film. The modified TiO₂ film electrode (hereafter PAA–en–N3/TiO₂), when used as the photoanode in a dye-sensitized solar cell (DSSC), exhibited enhanced solar energy conversion efficiency compared with that of the usual DSSC with the N3/TiO₂ film electrode. The increase in efficiency was attributed to the increased open-circuit voltage (V_oc) and short-circuit photocurrent (J_sc). The increase in V_oc was attributed to the formation of a hydrophobic PAA–en–N3 layer on the TiO₂/electrolyte interface, while the increase in J_sc was attributed to the additional dye acquired by the TiO₂ film from the PAA–en–N3 complex.     

Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

GaSb quantum dot (QD) solar cell structures were grown by molecular beam epitaxy on GaAs substrates. We investigate the reduction in open-circuit voltage and study the influence of the location of QD layers and their delta doping within the solar cell. Devices with 5 layers of delta-doped QDs placed in the intrinsic, n- and p-regions of a GaAs solar cell are experimentally investigated, and the deduced values of J_sc, V_oc, fill factor, efficiency (η) are compared. A trade-off is needed to minimize the V_oc degradation while maximizing the short circuit current density (J_sc) enhancement due to sub-bandgap absorption. The voltage recovery is attributed to the removal of the QDs from the high-field region which reduces SRH recombination. The devices with p- or n-doped QDs placed in the flat band potential (p- or n-region) show a recovery in J_sc and V_oc compared to devices with delta-doped QDs placed in the depletion region. However, there is less photocurrent arising from the absorption of sub-band gap photons. Furthermore, the long wavelength photoresponse of the n-doped QDs placed in the n-region shows a slight improvement compared to the control cell. The approach of placing QDs in the n-region of the solar cell instead of the depletion region is a possible route towards increasing the conversion efficiency of QD solar cells.     

Hybrid solar cells based on MEH-PPV and thin film semiconductor oxides (TiO2, Nb2O5, ZnO, CeO2 and CeO2–TiO2): Performance improvement during long-time irradiation

Performance improvement of hybrid solar cells (HSC) applying five different thin film semiconductor oxides has been observed during long-time irradiation in ambient atmosphere. This behavior shows a direct relation between HSC and oxygen content from the environment. Photovoltaic devices were prepared as bi-layers of thin film semiconducting oxides (TiO₂, Nb₂O₅, ZnO, CeO₂–TiO₂ and CeO₂) and the polymer MEH-PPV, with a final device configuration of ITO/Oxide_{thin film}/MEH-PPV/Ag. The oxides were prepared as thin transparent films from sol–gel solutions. The photovoltaic cells were studied in ambient atmosphere by recording the initial values of open circuit voltage (V_oc) and current density (I_sc). Solar decay curves presented as the measurement of the short circuit current as a function of time, IV curves and photophysical analyses were also carried out for each type of device. Solar cells with TiO₂ thin films showed the best performance with maximum V_oc as high as −0.74 V and I_sc of 0.4 mA/cm². Solar decay analyses showed that the devices require a stabilization period of several hours in order to reach maximum performance. In the case of TiO₂, Nb₂O₅ and CeO₂–TiO₂, the maximum current density was observed after 15 h; for CeO₂, the maximum performance was observed after 30 h. The only exception was observed with devices applying ZnO in which the current density decreased drastically and degraded the polymer in just a couple of hours.     

Influence of pyrazole derivatives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized TiO2 solar cell performance

The influence of pyrazole additives in an I⁻/I₃⁻ redox electrolyte solution on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics of the cell were measured using 18 different pyrazole derivatives. All of the pyrazole additives enhanced the open-circuit photovoltage (V_oc) and the solar energy conversion efficiency (η), but reduced the short-circuit photocurrent density (J_sc). Most of the pyrazoles improved fill factor (ff). The physical and chemical properties of the pyrazoles were computationally calculated in order to elucidate the reasons for the additive effects on cell performance. The greater the partial charge of the nitrogen atom at position 2 in the pyrazole group, the larger the V_oc, but the smaller the J_sc values. As the dipole moment of the pyrazole derivatives increased, the V_oc value increased, but the J_sc value decreased. The V_oc of the cell also increased as the ionization energy of the pyrazoles decreased. These results suggest that the electron donicity of the pyrazole additives affected the interaction with the nanocrystalline TiO₂ photoelectrode, the I⁻/I₃⁻ electrolyte, and the acetonitrile solvent, which changed the Ru(II)-dye-sensitized solar cell performance.     

Influence of alkylaminopyridine additives in electrolytes on dye-sensitized solar cell performance

The influence of alkylaminopyridine additives on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell with an I⁻/I₃⁻ redox electrolyte in acetonitrile was studied. The current–voltage characteristics were measured for more than 20 different alkylaminopyridines under AM 1.5 (100 mW/cm²). The alkylaminopyridine additives tested had varying effects on the performance of the cell. All the additives decreased the short circuit photocurrent density (J_sc), but increased the open-circuit photovoltage (V_oc) of the solar cell. Molecular orbital calculations imply that the dipole moment of the alkylaminopyridine molecules influences the J_sc of the cell and that the size, solvent accessible surface area, and ionization energy all affect the V_oc of the cell. The highest V_oc of 0.88 V was observed in an electrolyte containing 4-pyrrolidinopyridine, which is comparable to the maximum V_oc of 0.9 V for a cell consisting of TiO₂ electrode and I⁻/I₃⁻ redox system.     

An explicit J-V model of a solar cell for simple fill factor calculation

The J-V equation of a solar cell is implicit and requires iterative calculation to determine the fill factor and the maximum power point. Here an explicit model for J-V characteristic is proposed which is applicable to a large variety of solar cell. This model allows an easy estimation of fill factor from four simple measurements of the bias points corresponding to V_oc, J_sc, and any two voltage values lying between 0 and V_oc, where V_oc is the open circuit voltage and J_sc is the short circuit current density.     

Influence of alkyl dihalide gelators on solidification of dye-sensitized solar cells

Quasi-dye-sensitized solar cells were prepared by using ionic liquid-type electrolytes and gelators consisting of polyvinylpyridine and alkyl dihalides. Gelation occurred by the reaction of polyvinylpyridine and alkyl dihalides. When the chain length of the dihalides was varied, the short-circuit current (J_sc) increased with an increase in the chain length. However, the open-circuit voltage (V_oc) and fill factor (ff) slightly decreased. The increase in J_sc was brought about by the decrease in the interfacial resistances between the gel electrolyte and the counter electrode. In addition, the increase in the J_sc was explained by increases in the apparent diffusion coefficient of I⁻/I₃⁻ when the chain length increased. Decreases in V_oc and ff were explained by back-electron transfers from TiO₂ to iodine in the electrolytes. V_oc of the cells solidified by alkyldiiodide was lower than that solidified by alkyldichloride or alkyldibromide. It was explained by negatively shifted redox potential of I⁻/I₃⁻, compared with those for Cl⁻/Cl₂ or Br⁻/Br₂.     

Influence of electrolytes on the photovoltaic performance of organic dye-sensitized nanocrystalline TiO2 solar cells

We have studied the influence of electrolytes on the photovoltaic performance of mercurochrome-sensitized nanocrystalline TiO₂ solar cells using LiI, LiBr, and tetraalkylammonium iodides as the electrolyte. Short-circuit photocurrent density (J_sc) and open-circuit photovoltage (V_oc) depended strongly on the electrolyte. J_sc of 3.42 mA cm⁻² and V_oc of 0.52 V were obtained for the LiI electrolyte and J_sc of 2.10 mA cm⁻² and V_oc of 0.86 V were obtained for the Pr₄NI electrolyte. This difference in photovoltaic performance was due to the change in the conduction band level of the TiO₂ electrode. Large V_oc of 0.99 V was obtained for the LiBr electrolyte due to the large energy gap between the conduction band level of TiO₂ and the Br/Br₂ redox potential. Solar cell performance also depended strongly on organic solvent, suggesting that the physical properties of solvents such as Li ion conductivity and donor number affect photovoltaic performance.     

p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

We report on boron-doped μc-Si:H films prepared by hot-wire chemical vapor deposition (HWCVD) using silane as a source gas and trimethylboron (TMB) as a dopant gas and their incorporation into all-HW amorphous silicon solar cells. The dark conductivity of these films was in the range of 1–10 (Ω cm)⁻¹. The open circuit voltage V_oc of the solar cells was found to decrease from 840 mV at low hydrogen dilution H-dil=91% to 770 mV at high H-dil =97% during p-layer deposition which can be attributed to the increased crystallinity at higher H-dil and to subsequent band edge discontinuity between μc-Si:H p- and amorphous i-layer. The short circuit current density J_sc and the fill factor FF show an optimum at an intermediate H-dil and decrease for the highest H-dil. To improve the conversion efficiency and the reproducibility of the solar cells, an amorphous-like seed layer was incorporated between TCO and the bulk p-layer. The results obtained until now for amorphous solar cells with and without the seed layer are presented. The I–V parameters for the best p–i–n solar cell obtained so far are J_sc=13.95 mA/cm², V_oc=834 mV, FF=65% and η=7.6%, where the p-layers were prepared with 2% TMB. High open circuit voltages up to 847 mV could be achieved at higher TMB concentrations.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.     

Novel zinc porphyrin with phenylenevinylene meso-substituents: Synthesis and application in dye-sensitized solar cells

A novel zinc porphyrin, P, with phenylenevinylene segments at two opposite meso-positions and carboxyphenyl at the other two meso-positions of the porphyrin ring, was synthesized and characterized. The phenylenevinylene substituents were terminated with electron-accepting 4-nitro-α-cyanostilbene units. Elongation of the π-conjugation enhanced the solubility of P as well as broadened and strengthened the absorption spectrum. We have investigated the application of P in quasi solid state dye-sensitized solar cells (DSSCs). Under illumination intensity of 100 mW cm⁻², a power conversion efficiency of 2.90% was obtained for the DSSC based on P as sensitizer, which was significantly improved to 4.22% upon addition of deoxycholic acid (DCA) into the P solution for TiO₂ sensitization. Coadsorption of DCA decreased the dye adsorption, but significantly improved both short circuit current (J_sc) and open circuit voltage (V_oc). The breakup of π stacked aggregates might improve the electron injection yield and thus J_sc. The electrochemical impedance data indicate that the electron lifetime was improved by the coadsorption of DCA, which was attributed to the improvement in both V_oc and J_sc. The increase in J_sc has also been attributed to the reduction of the back reaction i.e., the recombination of electrons with tri-iodide ions.     

Diagnostics of thin-film silicon solar cells and solar panels/modules with variable intensity measurements (VIM)

A simple and low-cost method for analyzing amorphous silicon solar cells and modules, which have low values of the fill factor (FF), is proposed. Low fill factors can occur mainly because of 3 reasons: (a) excessive recombination due to “bad” intrinsic layers; (b) shunts and (c) very high series resistance. The method described here allows one to discriminate between (a), (b) and (c). It consists of measuring the J-V curves at different light intensities, varying typically from 0.05 to 1 sun. It has been called the “variable intensity method (VIM)”. Here, one plots R_sc=∂V/∂J (at V=0) and R_oc=∂V/∂J (at J=0) as a function of J_sc. From the slope of the R_sc-J_sc curve, one derives the “collection voltage V_coll”; from the asymptotic value of R_sc for low values of J_sc (<0.1 mA/cm²) one obtains the “true” shunt resistance R_shunt; from the asymptotic value of R_oc for high values of J_sc (around 10 mA/cm²) one obtains the “true” series resistance R_series. This paper shows quantitatively how too low values of V_coll and of R_shunt as well as how too high a value of R_series lead to a low value of FF for both cells and panels/modules.