Effect of electron transport layer engineering based on blue phosphorescent organic light-emitting diodes

A main requirement for achieving high efficiency in organic light-emitting diodes (OLEDs) is that all charges and electrically generated excitons should be employed for emission. We fabricated blue phosphorescent OLEDs with four types electron transporting layers, which were doped with lithium quinolate (Liq) from 0% to 10%. A series of blue devices consisted of indium tin oxide (ITO, 180 nm)/4,4-bis[N-(naphthyl)-N-phenyl-amino]biphenyl (NPB, 50 nm)/N,N′-dicarbazolyl-3,5-benzene (mCP, 10 nm)/iridium(III)bis[(4,6-di-fluoropheny)-pyridinato-N,C²] picolinate (FIrpic) doped in mCP (8%, 30 nm)/1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi, 20 nm)/TPBi mixed with Liq (20 nm)/Liq (2 nm)/aluminum (Al, 100 nm). The blue OLED doped with 5% Liq, which demonstrated a maximum luminous efficiency and external quantum efficiency of 17.64 cd/A and 8.78%, respectively, were found to be superior to the other blue devices.     

High performance red and green phosphorescent emitters suitable for the BT.2020 color gamut

In this work, we investigated the potential for phosphorescent emitters to achieve the BT.2020 color standard in displays, where the CIE coordinates for red and green are (0.709, 0.292) and (0.170, 0.797), respectively. Optical simulations were performed for both green and red top emission organic light emitting devices (OLEDs). For the green emitter, it is possible to reach (0.170, 0.785) using a spectrum with a peak wavelength (λ_max) at 526 nm and a full width at half maximum (FWHM) less than 30 nm. For the red emitter, in order to achieve (0.708, 0.292) while maintaining a high current efficiency (CE), it is important to decrease the FWHM instead of red-shifting the spectrum. Following the guidance of these simulation results, we designed and synthesized novel deep green (DGD) and deep red phosphorescent (DRD-II) emitters. The photoluminescent (PL) spectrum of DGD shows an FWHM of 30 nm and a λ_max of 523 nm. A top-emission green OLED built using DGD reached a CE of 171 cd/A at an operating voltage of 3.3 V and a lifetime of 95% of initial brightness (LT₉₅) > 1300 h at 10 mA/cm² with a CIE (x, y) = (0.170, 0.777). This is, to our knowledge, the best device performance ever reported for a green phosphorescent OLED at this CIE y. The PL spectrum of DRD-II has a λ_max of 630 nm with an FWHM of 30 nm. A top-emission red OLED built with DRD-II achieved a CE of 59 cd/A, an operating voltage of 3.2 V and an LT₉₅ over 20,000 h at a drive current of 10 mA/cm² with a CIE (x, y) = (0.708, 0.292). We also studied the angular dependence of the above devices and found they were comparable to devices with commercial emitters for the Digital Cinema Initiative P3 (DCI-P3) standard that had a wider FWHM. Combining these green and red emitters with a commercial blue OLED at (0.131, 0.046), we are able to cover 97% of the BT.2020 color gamut. The results using DGD and DRD-II suggest that they have great potential to satisfy BT.2020 in an organic phosphorescent system.     

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

The structural, optical, and electrical properties of Si‐doped SnO₂ (STO) films were investigated in terms of their potential applications for flexible electronic devices. All STO films were amorphous with an optical transmittance of ~90%. The optical band gap was widened as the Si content increased. The Hall mobility and carrier density were improved in the SnO₂ with 1 wt% Si film, which was attributed to the formation of donor states. Si (1 wt%) doped SnO₂ thin‐film transistor exhibited a good device performance and good stability with a saturation mobility of 6.38 cm²/Vs, a large I_on/I_off of 1.44 × 10⁷, and a SS value of 0.77 V/decade. The device mobility of a‐STO TFTs at different bending radius maintained still at a high level. These results suggest that a‐STO thin films are promising for fabricating flexible TFTs.     

Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer

Effects of doping molybdenum oxide (MoO₃) in copper phthalocyanine (CuPc) as hole injection layer in OLEDs are studied. A green OLED with structure of ITO/MoO₃-doped CuPc/NPB/10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H, 11H-(1)-benzopyropyrano(6,7,8-i,j) quinolizin-11-one (C545T): tris(8-hydroxyquinoline) aluminum (Alq₃)/Alq₃/LiF/Al shows the driving voltage of 4.4 V, and power efficiency of 4.3 lm/W at luminance of 100 cd/m². The charge transfer complex between CuPc and MoO₃ plays a decisive role in improving the performance of OLEDs. The AFM characterization shows that the doped film owns a better smooth surface, which is also in good agreement with the electrical performance of OLEDs.     

Influence of Cs doping in spray deposited SnO2 thin films for LPG sensors

Detection of low concentrations of petroleum gas was achieved using transparent conducting SnO₂ thin films doped with 0–4 wt.% caesium (Cs), deposited by spray pyrolysis technique. The electrical resistance change of the films was evaluated in the presence of LPG upon doping with different concentrations of Cs at different working temperatures in the range 250–400 °C. The investigations showed that the tin oxide thin film doped with 2% Cs with a mean grain size of 18 nm at a deposition temperature of 325 °C showed the maximum sensor response (93.4%). At a deposition temperature of 285 °C, the film doped with 3% Cs with a mean grain size of 20 nm showed a high response of 90.0% consistently. The structural properties of Cs-doped SnO₂ were studied by means of X-ray diffraction (XRD); the preferential orientation of the thin films was found to be along the (3 0 1) directions. The crystallite sizes of the films determined from XRD are found to vary between 15 and 60 nm. The electrical investigations revealed that Cs-doped SnO₂ thin film conductivity in a petroleum gas ambience and subsequently the sensor response depended on the dopant concentration and the deposition temperature of the film. The sensors showed a rapid response at an operating temperature of 345 °C. The long-term stability of the sensors is also reported.     

High‐efficiency p‐i‐n organic light‐emitting diodes with long lifetime

Abstract— High‐performance organic light‐emitting diodes (OLEDs) are promoting future applications of solid‐state lighting and flat‐panel displays. We demonstrate here that the performance demands for OLEDs are met by the PIN (p‐doped hole‐transport layer/intrinsically conductive emission layer/n‐doped electron‐transport layer) approach. This approach enables high current efficiency, low driving voltage, as well as long OLED lifetimes. Data on very‐high‐efficiency diodes (power efficiencies exceeding 70 lm/W) incorporating a double‐emission layer, comprised of two bipolar layers doped with tris(phenylpyridine)iridium [Ir(ppy)₃], into the PIN architecture are shown. Lifetimes of more than 220,000 hours at a brightness of 150 cd/m² are reported for a red PIN diode. The PIN approach further allows the integration of highly efficient top‐emitting diodes on a wide range of substrates. This is an important factor, especially for display applications where the compatibility of PIN OLEDs with various kinds of substrates is a key advantage. The PIN concept is very compatible with different backplanes, including passive‐matrix substrates as well as active‐matrix substrates on low‐temperature polysilicon (LTPS) or, in particular, amorphous silicon (a‐Si).     

Characterization of a SAG‐InGaN/AlGaN LED by mixed‐source HVPE with a multi‐sliding boat system

Abstract— The selective area growth (SAG) of a InGaN/AlGaN light‐emitting diode (LED) is performed by using mixed‐source hydride vapor‐phase epitaxy (HVPE) with a multi‐sliding boat system. The SAG‐InGaN/AlGaN LED consists of a Si‐doped AlGaN cladding layer, an InGaN active layer, a Mg‐doped AlGaN cladding layer, and a Mg‐doped GaN capping layer. The carrier concentration of the n‐type Al_xGa_1?xN (x ～ 16%) cladding layer depends on the amount of poly‐Si placed in the Al‐Ga source. The carrier concentration is varied from 2.0 × 10¹⁶ to 1.1 × 10¹⁷ cm^?3. Electroluminescence (EL) characteristics show an emission peak wavelength at 426 nm with a full width at half‐maximum (FWHM) of approximately 0.47 eV at 20 mA. It was found that the mixed‐source HVPE method with a multi‐sliding boat system is a candidate growth method for III‐nitride LEDs.     

High‐efficiency luminescent sources fabricated in mesoporous anodic alumina by sol‐gel synthesis

Abstract— This paper summarizes our recent results on the synthesis and investigation of photoluminescence (PL) from lanthanide‐doped microporous xerogel solids mesoscopically confined in porous anodic alumina (PAA). It was demonstrated, for Tb‐doped samples, that the PL intensity is strongly enhanced in comparison to thin xerogel films processed onto flat surfaces and increased with the thickness of the PAA layer. It was revealed for both Tb‐ and Eu‐doped PAA‐based structures that maximum emission is achieved at a excitation wavelength near 285 nm for the employed TiO₂ and Al2O₃ xerogels. Strong Eu‐ and Tb‐related PL visible to the naked eye was demonstrated, and a method for the fabrication of luminescent images based on anodizing, photolithography, and sol‐gel processes is proposed.     

Luminous‐efficiency improvement of solar‐cell‐integrated high‐contrast organic light‐emitting diode by applying distributed Bragg reflector

Abstract— Solar‐cell‐integrated organic light‐emitting diodes (OLEDs) were fabricated with both high contrast ratio and energy‐recycling ability. However, the luminous efficiency of the integrated devices is reduced to 50% of that of conventional top‐emitting OLEDs. A novel structure to recover the luminous efficiency from 50% to near 85% by applying a distributed Bragg reflector (DBR) made of 20 layers of GaN/AlN was demonstrated. It saves about 40% of the electric power than that of a device without a DBR. The contrast ratio remains high compared to that of conventional OLEDs. In this paper, simulations were conducted first to prove our models and assumptions. Then, two types of thin‐film solar cells — CdTe and CIGS solar cells — were used. They had different contrast ratios as well as viewing‐angle properties. Finally, the emission spectrum was calculated to be 11 nm FWHM, which is narrower than that for the emission spectrum of a typical microcavity OLED and has the advantage of having saturated colors.     

Improved performance of organic light‐emitting devices with ultra‐thin hole‐blocking layers

Abstract— Tris‐(8‐hydroxyqunoline) aluminum (Alq₃)‐based organic light‐emitting devices (OLEDs) using different thickness of 2,9‐Dimethyl‐4,7‐diphenyl‐1,110‐phenanthorline (BCP) as a hole‐blocking layer inserted both in the electron‐ and hole‐transport layers have been fabricated. The devices have a configuration of indium tin oxide (ITO)/m‐MTDATA (80 nm)/BCP (X nm)/NPB (20 nm)/Alq₃ (40 nm)/BCP (X nm)/Alq₃ (60 nm)/Mg: Ag (200 nm), where m‐MTDATA is 4, 4′, 4″‐Tris(N‐3‐methylphenyl‐N‐phenyl‐amino) triphenylamine, which is used to improve hole injection and NPB is N,N′‐Di(naphth‐2‐yl)‐N,N′‐diphenyl‐benzidine. X varies between 0 and 2 nm. For a device with an optimal thickness of 1‐nm BCP, the current and power efficiencies were significantly improved by 47% and 43%, respectively, compared to that of a standard device without a BCP layer. The improved efficiencies are due to a good balance between the electron and hole injection, exciton formation, and confinement within the luminescent region. Based on the optimal device mentioned above, the NPB layer thickness influences the properties of the OLEDs.     

Temperature sensor based on the Er green upconverted emission in a fluorotellurite glass

The temperature dependence of the green upconverted emission from the two thermally coupled ²H_11/2 and ⁴S_3/2 levels of the Er³⁺ ion in a fluorotellurite glass has been analyzed as a function of the optically active ion concentration in order to check its availability as a temperature sensor. The infrared-to-green upconverted emission have been observed by the naked eyes after a cw laser diode excitation at 800 nm. The fluorescence intensity ratio between the thermally coupled emitting levels as well as the temperature sensitivity has been experimentally obtained up to 540 K. A better behaviour as a temperature sensor has been obtained for the less Er³⁺ concentrated glass with a maximum sensitivity of 54 × 10⁻⁴ K⁻¹ at 540 K, one of the highest found in rare-earth doped transparent materials.     

In2O3 + xBaO (x = 0.5-5 at.%) - A novel material for trace level detection of NOx in the ambient

Indium oxide (In₂O₃) doped with 0.5-5 at.% of Ba was examined for their response towards trace levels of NO_x in the ambient. Crystallographic phase studies, electrical conductivity and sensor studies for NO_x with cross interference for hydrogen, petroleum gas (PG) and ammonia were carried out. Bulk compositions with x ≤ 1 at.% of Ba exhibited high response towards NO_x with extremely low cross interference for hydrogen, PG and ammonia, offering high selectivity. Thin films of 0.5 at.% Ba doped In₂O₃ were deposited using pulsed laser deposition technique using an excimer laser (KrF) operating at a wavelength of (λ) 248 nm with a fluence of ∼3 J/cm² and pulsed at 10 Hz. Thin film sensors exhibited better response towards 3 ppm NO_x quite reliably and reproducibly and offer the potential to develop NO_x sensors (Threshold limit value of NO₂ and NO is 3 and 25 ppm, respectively).     

Composite silver electrode for double‐sided‐emitting stacked organic light‐emitting diode

Abstract— A reflective composite silver electrode is proposed and characterized as the middle electrode of a stacked organic light‐emitting diode (OLED) with double‐sided light emission. The proposed electrode is composed of a thermally evaporated stack of LiF (1 nm)/Al (3 nm)/Ag (70 nm) layers. The LiF/Al and the plasma‐treated Ag of the electrode function well as the respective cathode and anode of the bottom‐ and top‐emitting stacked OLEDs, with both being of the non‐inverted type. Power efficiencies of 10.3 and 12.1 lm/W at 100 cd/m² have been measured for bottom‐ and top‐emitting OLEDs, respectively, using dye doping. The stacked OLED having this bipolar middle electrode can be constructed as a two‐terminal‐only device, allowing for simpler driving schemes in double‐side‐emitting passive‐/active‐matrix OLED displays.     

Fluorescence detection of nitrogen dioxide with perylene/PMMA thin films

Thin films of polymethylmethacrylate (PMMA) doped with perylene provide selective, robust and easily prepared optical sensor films for NO₂ gas with suitable response times for materials aging applications. The materials are readily formed as 200 nm thin spin cast films on glass from chlorobenzene solution. The fluorescence emission of the films (λ_max=442 nm) is quenched upon exposure to NO₂ gas through an irreversible reaction forming non-fluorescent nitroperylene. Infrared, UV–VIS and fluorescence spectroscopies confirmed the presence of the nitro adduct in the films. In other atmospheres examined, such as air and 1000 ppm concentrations of SO₂, CO, Cl₂ and NH₃, the films exhibited no loss of fluorescence intensity over a period of days to weeks. Response curves were obtained for 1000, 100 and 10 ppm NO₂ at room temperature with equilibration times varying from hours to weeks. The response curves were fit using a numerical solution to the coupled diffusion and a nonlinear chemical reaction problem assuming that the situation is reaction limiting. The forward reaction constant fitted to experimental data was k_f∼0.06 (ppm min)⁻¹.     

Tetrahedrally bonded amorphous carbon for field‐emission displays

Abstract— Field emission from a series of tetrahedrally bonded amorphous‐carbon (ta‐C) films, deposited in a filtered cathodic vacuum arc, has been measured. The threshold field for emission and current densities achievable have been investigated as a function of sp³/sp² bonding ratio and nitrogen content. Typical as‐grown undoped ta‐C films have threshold fields of the order 10–15 V/μm and optimally nitrogen doped films exhibit fields as low as 5 V/μm. In order to gain further understanding of the mechanism of field emission, the films were also subjected to H₂, Ar, and O₂ plasma treatments and were also deposited onto substrates of different work function. The threshold field, emission current, and emission site densities were all significantly improved by the plasma treatment, but little dependence of these properties on work function of the substrate was observed. This suggests that the main barrier to emission in these films is at the front surface.     

Solution‐processable double‐layered ionic p‐i‐n organic light‐emitting diodes

Abstract— Solution‐processed double‐layered ionic p‐i‐n organic light‐emitting diodes (OLEDs), comprised of an emitting material layer doped with an organometallic green phosphor and a photo‐cross‐linked hole‐transporting layer doped with photo‐initiator is reported. The fabricated OLEDs were annealed using simultaneous thermal and electrical treatments to form a double‐layered ionic p‐i‐n structure. As a result, an annealed double‐layered OLED with a peak brightness over 20,000 cd/m² (20 V, 390 mA/cm²) and a peak efficiency of 15 cd/A (6 V, 210 cd/m²) was achieved.     

Effect of PEDOT:PSS vs. MoO3 as the hole injection layer on performance of C545T-based green electroluminescent light-emitting diodes

In order to understand the effect of hole injection on the performance of organic light-emitting diodes (OLEDs) with electron- and hole-type hosts used in the emissive layer, we fabricated OLEDs based on a green fluorescent 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)benzopyropyrano(6,7-8-I,j)quinolizin-11-one (C545T) with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and MoO₃ as the hole injection layer, respectively. Here, N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB) and tris-(8-hydroxyquinoline) aluminum (Alq3) are, respectively, used as the host in the emissive layer for comparison. It is clearly found that different hole injection layers play different roles in the adjustment of the electron/hole injection and the transport balance, thus the different hosts are needed in the emissive layer for high electroluminescence efficiency OLEDs. This means that the selection of appropriate hole injection layers for OLEDs according to the different hosts in the emissive layer is especially important in the fabrication of high efficiency single emissive layer OLEDs.     

Turn-on voltage reduction of organic light-emitting diode using a nickel-doped indium tin oxide anode prepared by single target sputtering

Organic light-emitting diodes (OLEDs) with a nickel (Ni)-doped indium tin oxide (ITO) anode were fabricated. The Ni-doped ITO anode was prepared using sputter deposition of Ni–ITO single targets consisting of 1, 3 and 5 wt% of nickel. Turn-on voltage of OLED devices with the Ni-doped ITO anode was reduced by 2.5, 4 and 3.8 V for 1, 3 and 5 wt% targets, respectively. Half-luminance lifetime was improved by 2.5 times with a Ni(3 wt%)-ITO single target. The successful development in preparing Ni-doped ITO films by Ni–ITO single target sputtering allows this approach to be adopted for OLED manufacturing.     

Sun-stimulated chlorophyll fluorescence 2: Impact of atmospheric properties

Abstract

The Sun-stimulated chlorophyll fluorescence is a small but significant property of phytoplankton which can be detected using remote-sensing techniques. Besides the influence of oceanic properties, chlorophyll fluorescence is masked by atmospheric extinction. While an increase in chlorophyll concentration of 1 mg/m³ causes an increase in the upwelling radiances of about 0·03Wm^?2sr^?1 μm^?1 just above the water surface and due to the chlorophyll fluorescence, the upward radiances measured at λ_F = 685nm and at the top of the atmosphere ranges from 8 to 20Wm^?2sr^?1 μm^?1 for realistic atmospheric turbidity variations and a solar zenith distance of Θ_s = 50·7°. Additionally, the fluorescence, peaking at λ_F = 685nm with a half-width of about 10 nm, is reduced by the absorption of O₂ and H₂O. However, the fluorescence signal is nearly unaffected, when wavelengths λ≥686nm are exluded and a spectral interval of Δλ_F = 5nm is used for the radiance measurements.     

Bright red-to-yellow organic light-emitting devices based on polarization-induced spectral shifts and broadening

We demonstrated red and yellow organic light-emitting devices (OLEDs) with the structure of ITO/NPB/AlQ:DCJTB/AlQ/LiF/Al, where the NPB, AlQ and DCJTB are 4, 4′-bis[N-(1-naphthyl)-N-henylamino] biphenyl, tris(8-quinolinolato)aluminum and 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran, respectively. Electroluminescent (EL) behaviors of these devices have been examined with different concentrations of DCJTB doped into AlQ matrix. The emission color of the devices depends on the doping concentrations of DCJTB. For red and yellow OLEDs, a maximum luminescence of 2750 cd/m² and 21,700 cd/m² was obtained, respectively. The peak emission wavelength shift of DCJTB was found to be due to the polarization effects. It is of particular interest that the EL spectrum of DCJTB got broadening with the doping concentrations and current densities of the devices in our experiments.