Formation and properties of cadmium sulfide buffer layer for CIGS solar cells grown using hot plate bath deposition

In the present study, cadmium sulfide (CdS) thin films were deposited on different substrates [soda glass, fluoride doped tin oxide, and tin doped indium oxide (ITO) coated glass] by a hot plate method. To control the thickness and the reproducibility of the sample production, the thin films were coated at different temperatures and deposition times. The CdS thin films were heated at 400 °C in air and forming gas (FG) atmosphere to investigate the effect of the annealing temperatures. The thickness of the samples, measured by ellipsometry, could be controlled by the deposition time and temperature of the hot plate. The phase formation and structural properties of CdS thin films were studied by X-ray diffraction and scanning electron microscopy, whereas the optical properties were obtained by UV–vis spectroscopy. A hexagonal crystal structure was observed for CdS thin films and the crystallinity improved upon annealing. The structural and optical properties of CdS thin films were also enhanced by annealing at 400 °C in FG atmosphere (95 % N₂, 5 % H₂). The optical band gap was changed from 2.25 to 2.40 eV at different annealing temperatures and gas atmospheres. A higher electrical conductivity, for the sample annealed at FG, was noticed. The samples deposited on ITO and annealed in FG atmosphere showed the best structural and electrical properties compared to the other samples. CdS thin films can be widely used for application as a buffer layer for copper–indium–gallium–selenide solar cells.     

Chemically deposited CdS films in an ammonia-free cadmium-sodium citrate system

In this work, we report the properties of chemically deposited CdS thin films in a cadmium-sodium citrate system. This chemical bath deposition process does not employ ammonia. We deposited four series of films at different cadmium content in the chemical bath process and determined their properties. The obtained information can be very useful for the optimization of the deposition process in order to reduce the amount of toxic chemical waste, mainly Cd-containing waste. The structural and optical properties of the CdS films were determined from X-ray diffraction, optical transmission and reflection spectroscopy and scanning electron microscopy measurements. We found that the properties of the films are very sensitive to the amount of cadmium in the deposition process. The process allows the deposition of good quality CdS thin films using 1.12, 0.84 and 0.76 mg of cadmium per milliliter of reaction solution.     

Optical and structural properties of chemically deposited CdS thin films on polyethylene naphthalate substrates

CdS thin films were deposited on polyethylene naphthalate substrates by means of the chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. Three sets of CdS films were grown in precursor solutions with different contents of Cd and thiourea maintaining constant the concentration ratios [Cd]/[thiourea] and [Cd]/[sodium citrate] at 0.2 and 0.1 M/M, respectively. The concentrations of cadmium in the reaction solutions were 0.01, 7.5 × 10⁻³ and 6.8 × 10⁻³ M, respectively. The three sets of CdS films were homogeneous, hard, specularly reflecting, yellowish and adhered very well to the plastic substrates, quite similar to those deposited on glass substrates. The structural and optical properties of the CdS films were determined from X-ray diffraction, optical transmission and reflection spectroscopy and atomic force microscopy measurements. We found that the properties of the films depend on both the amount of Cd in the growth solutions and on the deposition time. The increasing of Cd concentration in the reaction solution yield to thicker CdS films with smaller grain size, shorter lattice constant, and higher energy band gap. The energy band gap of the CdS films varied in the range 2.42-2.54 eV depending on the precursor solution. The properties of the films were analyzed in terms of the growth mechanisms during the chemical deposition of CdS layers.     

Structural,optical and magnetic properties of Ba and Ni doped CdS thin films prepared by spray pyrolysis method

Pure, Barium and Nickel doped cadmium sulphide (CdS) thin films have been coated on glass substrates at 400?°C by spray pyrolysis technique. The prepared CdS and doped CdS thin films were analysed by various measurements such as X-ray diffraction (XRD), SEM, optical and Vibrating Sample Magnetometer (VSM). X-ray diffraction measurements show that the coated pure, Ba and Ni-doped CdS thin films belong to the cubic crystal structure with orientation preferentially along (111) direction. The average crystallite size of pure, Ba and Ni doped CdS thin films were determined as 31, 33 and 45 nm, respectively. The average dislocation density (δ) and stacking fault (SF) of pure, Ba and Ni doped CdS thin films were also determined. The surface morphology and elemental analysis of the thin films were determined by scanning electron microscopy and energy dispersive X-ray spectrum (SEM with EDAX). It is observed that the optical energy bandgap has been decreased from 2.43 to 2.1 eV due to the doping Ba. The luminescence spectrum shows a strong emission peak at 517 nm in the case of pure CdS thin film and a meager red shift has been observed due to the doping. VSM studies were employed to study the magnetic behaviour of Ba and Ni doped CdS thin films.     

电子束蒸发制备CdS多晶薄膜及性质研究

采用电子束蒸发工艺在普通玻璃衬底上制备了硫化镉(CdS)多晶薄膜,研究了不同衬底温度对薄膜结构、表面形貌及光透过率的影响.测试结果显示:(1)不同衬底温度下沉积的CdS薄膜均呈现了〈002〉晶向的高度优势生长,属于六方相结构.随着衬底温度的升高,还逐渐出现了〈103〉、〈004〉、〈105〉等六方晶向;(2)CdS多晶薄膜表面连续,致密性好,且晶粒大小随着衬底温度的升高而增大;(3)低温下制备CdS薄膜吸收谱有较宽的吸收边,随着衬底温度的升高,吸收曲线趋于陡直.制备样品在550nm波段后的平均透过率都超过70%,符合作为CdTe太阳电池的窗口层.     

Structural and optical properties of nanocrystalline CdS thin films prepared using microwave-assisted chemical bath deposition

Cadmium sulfide (CdS) nanocrystalline thin films were prepared using the microwave-assisted chemical bath deposition method onto glass substrates at 80 °C. Aqueous solutions of either cadmium chloride or cadmium acetate and thiourea were used as sources of Cd²⁺ and S²⁻ ions, respectively. Two sets of samples with different concentrations were prepared. A microwave oven was used as a heating source to synthesize the nanocrystalline CdS thin films. The prepared thin films had a good adhesion with no pinholes. These films were examined for their structural and surface morphologies by X-ray diffraction (XRD), scanning electron microscopy, and atomic force microscopy. The optical properties were investigated using UV-vis spectrophotometer, photoluminescence, and Raman spectroscopy. Particle size values obtained from XRD were compared with these calculated using effective mass models. The values of optical band gaps according to optical transmission measurements decreased as the ion source molar concentration increased.     

Influence of thermal annealing on microstructural,morphological, optical properties and surface electronic structure of copper oxide thin films

In this study, effect of the post-deposition thermal annealing on copper oxide thin films has been systemically investigated. The copper oxide thin films were chemically deposited on glass substrates by spin-coating. Samples were annealed in air at atmospheric pressure and at different temperatures ranging from 200 to 600°C. The microstructural, morphological, optical properties and surface electronic structure of the thin films have been studied by diagnostic techniques such as X-ray diffraction (XRD), Raman spectroscopy, ultraviolet–visible (UV–VIS) absorption spectroscopy, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of the films was about 520 nm. Crystallinity and grain size was found to improve with annealing temperature. The optical bandgap of the samples was found to be in between 1.93 and 2.08 eV. Cupric oxide (CuO), cuprous oxide (Cu₂O) and copper hydroxide (Cu(OH)₂) phases were observed on the surface of as-deposited and 600 °C annealed thin films and relative concentrations of these three phases were found to depend on annealing temperature. A complete characterization reported herein allowed us to better understand the surface properties of copper oxide thin films which could then be used as active layers in optoelectronic devices such as solar cells and photodetectors.     

Structural and optical properties of CdS thin films prepared by chemical bath deposition at different ammonia concentration and S/Cd molar ratios

CdS thin films were prepared by chemical bath deposition technique using the precursors of SC(NH₂)₂, CdCl₂, NH₄Cl, NH₃·H₂O and deionized water. The obtained thin films were characterized by scanning electron microscopy, X-ray diffraction, energy dispersive spectrometer, UV–VIS specrophotometry and photoluminescence spectroscopy. The morphology, structural and optical properties of CdS thin films were investigated as a function of ammonia concentration and S/Cd molar ratios in precursors. The results reveal that morphology of CdS films change from flake like into spherical particle like, crystal structure from wurtzite structure to zinc blende structure, S/Cd atom ratios in CdS thin films increase and optical band gap E _g decrease with increasing ammonia concentration in precursors. The room temperature photoluminescence spectrum of CdS thin films shows a strong peak at about 500 nm and a weak peak at about 675 nm.     

Deposition of CdS thin films onto Si(111) substrate by PLD with femtosecond pulse

The effect of laser fluence (laser incident energy in the range of 0.5-1.5 mJ/pulse with the same laser spot size of 0.5 mm × 0.7 mm) on the structural quality and optical properties synthesized by femtosecond pulsed-laser deposition has been studied. The structural quality and optical properties of the deposited CdS thin films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence measurement. The studies revealed an improvement in the structural quality and optical properties of the CdS thin films with increasing the laser fluence in some range. However, too high laser fluence could lead to the structural quality and optical properties of the CdS thin films to degrade. We defined the optimum laser incident energy was around 1.2 mJ/pulse. And the kinetic energy of the plasma produced by femtosecond laser strongly affects the structure and properties of the deposited CdS thin films.     

Comparison of cadmium sulfide thin films deposited on glass and polyethylene terephthalate substrates with thermal evaporation for solar cell applications

Cadmium sulfide (CdS) thin films have been deposited onto glass and polyethylene terephthalate (PET) substrates at room temperature with thermal evaporation in a vacuum of about 3 × 10⁻⁵ Torr for use as window materials for solar cells. Effects of substrate types on the structural and optical characteristics of the films were studied. Sets of experiments were conducted to optimize the deposition of CdS films with appropriate deposition parameters. The deposited films were analyzed with atomic force microscopy, energy dispersive X-ray, X-ray diffraction and optical transmittance measurements to determine their structural and optical characteristics. X-ray diffraction patterns confirm the proper phase formation of the CdS. PET substrate exhibited the larger roughness than that for the glass because of large particles adsorbed on the PET substrate. The average transmittance of the films PET is about 71% and increases up to 81% for glass substrate.     

直流磁控溅射技术制备TiNxOy薄膜

利用直流磁控溅射技术在玻璃衬底上制备了TiNxOy薄膜样品。发现薄膜的颜色、晶体结构、光学性质等都强烈依赖于反应气体的流量。利用光电子能谱（XPS）、X射线衍射（XRD）、UV—Vis分光光度计、扫描电子显微镜（SEM）等测试手段对样品进行表征。结果表明：随着O2流量的逐步增加,薄膜逐渐呈现非晶态,晶粒逐渐变小。薄膜结构从TiN到TiNxOy再向TiO2过渡。透射光谱显示从TiN的不透明逐渐增加到透明度为80％,且吸收阈发生蓝移。     

纳米ZnO镶嵌SiO2薄膜的光学特性研究

采用射频反应磁控溅射法在玻璃衬底上成功制备出纳米ZnO镶嵌SiO2非晶薄膜,利用X射线衍射仪、场发射扫描电子显微镜、X射线光电子能谱仪和紫外-可见分光光度计研究了纳米Zn0镶嵌SiO2薄膜相比纯ZnO纳米薄膜结构的变化及镶嵌结构对其光学特性的影响.研究发现与纯ZnO纳米薄膜相比,纳米ZnO镶嵌SiO2薄膜结构样品呈非晶结构,在紫外区光吸收系数以及光学带隙明显增大,光吸收以及光学带隙的变化与样品制备的衬底温度有关.研究结果表明,由于SiO2的特殊结构实现了对纳米ZnO的束缚,减少了ZnO纳米粒子的集聚,使得量子限制效应变得显著,导致复合膜光学带隙的明显增大以及吸收边的蓝移.     

Comparison of CdS thin films prepared by different techniques for applications in solar cells as window materials

CdS thin films as window materials for solar cells have been prepared by three procedures; chemical bath deposition, electrodeposition in an aqueous medium at 80 °C and electrodeposition in a non-aqueous medium at 170 °C. As deposited films along with those obtained after annealing in air at 400 °C for 15 min were studied using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), glow discharge optical emission spectroscopy (GDOES), scanning electron microscopy (SEM), optical absorption spectra and photoelectrochemical spectroscopy (PEC) techniques under identical experimental conditions. X-ray diffraction data indicate the formation of hexagonal CdS as the predominent phase, but the SEM studies show that their textures are widely dependent on the conditions employed. GDOES profiling indicates the incorporation of Na and Si into CdS films prepared by all three techniques. Annealing of chemical bath deposited films causes a red shift of the absorbance edge and also a shift in the maxima of the photocurrent action spectra towards the low energy side. However, this effect was comparatively negligible for the samples prepared by the other two techniques. PEC studies indicate that CdS materials grown by all three techniques are all n-type. All studies indicate that the films grown at 170 °C using non-aqueous solutions are of better crystallinity and of improved electrical properties. © 1998 Kluwer Academic Publishers     

The effect of sulfur concentration on the properties of chemical bath deposited CdS thin films

We study the structural, surface morphology and optical properties of chemical bath deposited (CBD) cadmium sulfide (CdS) thin films under the effect of variation of S/Cd ratio. CdS thin films have been successfully deposited by CBD technique with solutions containing S/Cd ionic concentration ratio of 5.0, 2.5, 1.0, 0.5 and 0.25. Single phase CdS, with a hexagonal structure, is observed for the concentration of S/Cd = 5.0, 2.5, 1.0 and 0.5 films while for the ratio of 0.25, the films exhibited a partially amorphous nature. These have been confirmed by X-ray diffraction (XRD), transmission and scanning electron microscopy (TEM and SEM) analyses. The band gaps of the films obtained by transmission and photoacoustic spectra are found to be in the range of 2.40 to 3.26 eV. The large variation of band gaps of the films with composition is discussed by employing quantum size effect phenomena. The transition levels of CdS are also studied using photoacoustic spectroscopy.     

Control of morphology and optical properties of PbS nanostructured thin films by deposition parameters: study of mechanism

PbS thin films were grown on glass substrates by chemical bath deposition (CBD) using lead nitrate, thiourea and sodium hydroxide in aqueous solutions at three different temperatures (22, 36 and 50?°C). The microstructure and morphology evolution of the films were investigated using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Optical properties were studied using UV–Vis–IR spectroscopy. The results indicate that temperature plays an important role in controlling the morphology and optical properties of nanostructured PbS thin films through changing deposition mechanism. The active deposition mechanism changed from cluster to ion-by-ion mechanism with an increase in deposition temperature from 22 to 50?°C, and consequently, film properties such as morphology, optical absorption and preferred orientation changed completely.     

化学水浴沉积时间对CdS薄膜性质的影响

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜,通过XRD、XRF、SEM和光学透过率谱等测试手段研究了沉积时间对CdS薄膜沉积过程和性质的影响.结果表明,随着沉积时间的增加,薄膜增厚;S/Cd原子比增加,但都为富Cd的CdS薄膜;XRD研究表明,薄膜结构由立方、六方混合相向立方相转变,(111)方向成为择优生长方向;SEM研究表明,随沉积时间增加,薄膜变致密,薄膜表面出现的白色附着颗粒增多,尺寸增大;沉积时间对薄膜的光学性质也有很大的影响,随着沉积时间的增加薄膜透过率减小,而禁带宽度值增大.     

A study of size dependent structure, morphology and luminescence behavior of CdS films on Si substrate

Size tunable cadmium sulfide (CdS) films deposited by a dip coating technique on silicon (100) and indium tin oxide/glass substrates have been characterized using X-ray diffraction, X-ray reflectivity, transmission electron microscopy, atomic force microscopy and photoluminescence spectroscopy. The structural characterization indicated growth of an oriented phase of cadmium sulfide. Transmission electron microscopy used to calculate the particle size indicated narrow size dispersion. The tendency of nanocrystalline CdS films to form ordered clusters of CdS quantum dots on silicon (100) substrate has been revealed by morphological studies using atomic force microscopy. The photoluminescence emission spectroscopy of the cadmium sulfide films has also been investigated. It is shown that the nanocrystalline CdS exhibit intense photoluminescence as compared to the large grained polycrystalline CdS films. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the observed photoluminescence behavior of CdS is substantially enhanced when the nanocrystallites are assembled on silicon (100) substrate.     

Stoichiometric effects on optical properties of cadmium sulphide quantum dots

Size quantised cadmium sulphide (CdS) nanocrystalline thin films with different particle sizes and stoichiometric ratios were successfully grown on indium tin oxide substrates using an aqueous synthetic route. The effect of cadmium (Cd) to sulphur (S) ratio on the optical properties of CdS nanocrystalline films was investigated using EDAX, UV-vis spectroscopy, photoluminescence and Raman spectroscopy. A satisfactory stoichiometric condition was achieved for 0.13 M concentration of thiourea whereas concentrations in the range of 1-1.2% of mercaptoethanol capping agents produced values much smaller than Wannier exciton diameter for CdS grain sizes, leading to quantum confinement. Photoluminescence emission bands and Raman peaks were analysed for the physical understanding of optimum growth of CdS quantum dots.     

Structural,morphological, optical and electrical properties of CdS thin films simultaneously doped with magnesium and chlorine

CdS thin films simultaneously doped with Mg and Cl at different doping concentrations (0, 2, 4, 6 and 8 at%) were prepared on glass substrates by spray pyrolysis technique using perfume atomizer at 400 °C. The effect of Mg and Cl doping concentration on the structural, morphological, optical and electrical properties of the deposited films were investigated using X-ray diffraction (XRD), scanning electron microscopy, UV–Vis spectroscopy and dc electrical measurements, respectively. XRD analysis showed that the undoped and doped CdS films exhibit hexagonal structure with a preferential orientation along the (0 0 2) plane. The 2θ angle position of the (0 0 2) peak of the doped films was shifted towards a higher angle with increasing Mg and Cl concentration. The UV–Vis–NIR absorption spectra of Mg and Cl doped thin films are measured and classical Tauc approach was employed to estimate their band gap energies. The increase in band gap energy from 2.46 to 2.73 eV with the reduction in crystallite size supports quantum size effect. Raman spectra implied that more defects existed in the doped samples. Electrical studies showed that all the films have resistivity in the order of 10¹ Ω-cm and the CdS film with 6 at% Mg and Cl concentration has a minimum resistivity of 1.332 × 10¹ Ω-cm.     

An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV-Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm-19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.