2.5-10Gb/s光发射机驱动电路HEMT IC中器件模型参数

对高速调制器驱动电路HEMTIC中器件参数进行了研究,着重讨论了HEMT器件直流参数、交流参数对外调制驱动电路特性的影响,给出了满足电路性能要求的器件参数范围;对2.5-10Gb/sPHEMTIC光驱动电路进行了计算机仿真,眼图模拟结果表明满足2.5-10Gb/s高速光纤通信系统需要.     

10Gb/s光收发器驱动电路稳定性设计与实现

介绍了10Gb/s高速光收发器的结构组成,对激光收发器的稳定性进行了分析,设计了一种以激光器驱动器件为核心,基于单片机I2C协议辅助控制的驱动电路。该电路集成了自动功率控制、抗干扰设计、热设计等技术,能够实现LD驱动。驱动电路可提供全温度范围性能控制（-40～＋85℃）,使平均光功率在整个温度范围及工作寿命期间保持恒定。     

10Gb/s×12通道VCSEL驱动器阵列设计

采用0.18μm CMOS工艺设计了12通道并行垂直腔面发射激光器(VCSEL:Vertical CavitvSurface Emitt ing Laser)驱动阵列.仿真结果表明,1.8V电源供电时,该电路单通道输出调制电流可达30mA,工作速率为10Gb/s,最大可达12Gb/s,12路并行通道的总带宽为120Gb/s,该驱动阵列电路可用于高速芯片间光互连.     

10GHz 2分频器芯片设计

目前,10 Gb/s以上的数字光纤通信技术正在逐步得到应用,研究和开发光纤通信用的高速集成电路具有重要的意义。文章介绍了使用0.2μm GaAs HEMT工艺设计的1个10 Gb/s以上的光纤传输用2分频器。该分频器采用双锁存器串联结构,仿真结果和流片测试结果均表明该电路在10Gb/s的速率上可以完成2分频功能。     

Gb/s级光前置放大器的基本电路形式

通过对由InGaAs-PIN或InGaAs-APD与GaAsFET或HEMT配合组成的光前置放大器分类比较,找出了适合Gb/s高速光纤通信前置放大器的电路形式。介绍了几种典型电路,讨论和分析了其设计、制作和测试结果。     

10Gb/s光调制器InGaP/GaAs HBT驱动电路的研制

采用自行研发的4英寸InGaP/GaAs HBT技术,设计和制造了10Gb/s光调制器驱动电路.该驱动电路的输出电压摆幅达到3V_pp,上升时间为34.2ps(20~80%),下降时间为37.8ps(20~80%),输入端的阻抗匹配良好(S11=-12.3dB@10GHz),达到10Gb/s光通信系统(SONET OC-192,SDH STM-64)的要求.整个驱动电路采用-5.2V的单电源供电,总功耗为1.3W,芯片面积为2.01×1.38mm².     

HEMT DCFL倒相器的模拟分析

目前,对HEMT逻辑单元电路的模拟分析基本上是基于SPICE模型,采用曲线拟合及参数提取等方法完成,较难从模拟结果直接获得有关器件物理参数与电路性能指标,给HEMT高速IC逻辑设计带来了困难。本研究进行了HEMT门特性的理论分析,提出了模拟HEMT DCFL倒相器直流传输特性及瞬态特性的新模型,并进行了计算机模拟。 在进行直流传输特性模拟时,讨论了电压传输过程中三个不同的工作区,利用K.Park提出的HEMT I—V特性模型,可得到各区输入与输出电压关系,即可完整地模拟出HEMT DCFL倒相器的直流传输特性,克服了C.H.Hyun模型中仅能模拟过渡区的缺陷。另外,还计算了负载管阈电压和源电阻对传输特性的影响。 Hyun简单地运用了导电机理不同于HEMT的GaAs无栅FET饱和电流表达式计算延迟时间,带来了一定的误差,本研究仍使用K.Park的I—V特性模型计算负载管导通电流,较为正确地计算出延迟时间与驱动管栅宽、负载管阈电压及电源电压的关系。 由于模型将器件的物理参数与电路性能指标有机结合,且较为全面地考虑了影响倒相器特性的诸因素,故较好地指导了HEMT IC的设计。     

用于10Gb/s光接收机的BiCMOS放大电路

设计了一种用于SDH系统STM-64(10Gb/s)速率级光接收机中的BiCMOS放大电路,包括NMOS共栅-共源前置放大器和差分式BiCMOS主放大器;各个放大器中都引入了负反馈;并精选了元器件参数,采取了提速措施,以保证放大电路在低功耗下工作在10Gb/s或更高速率上.实验结果表明,所设计的放大电路在10Gb/s速率上,主放大器输入动态范围为42dB(3.2～500mV),50Ω负载电阻上的输出限幅约为250mV,小信号输入时的最高工作速率达到12Gb/s,放大电路可采用1.8～5.6V电源供电,平均功耗约为230mW,从而满足了光纤通信系统中的高性能要求.     

PIN型2.5 Gb/s光接收组件的研制

本文详细阐述了 2 .5 Gb/ s光接收组件中 PIN- PD与前置放大器的匹配对器件性能的影响 ,并给出了 PSPICE软件仿真和实验测试结果。实测此类光接收组件在 2 .5 Gb/ s码率工作时的接收灵敏度可达到 - 2 5 d Bm (BER=1× 10 - 1 1 )。此产品可用于 SDH STM- 16光传输系统中。     

基于0.25μmCMOS工艺的1.25Gb/s1∶10分接器设计

介绍一种用于千兆以太网的1.25Gb/s分接器电路。该电路实现了1路1.25Gb/s高速差分数据到10路125Mb/s低速并行单端数据的分接功能。电路采用树型分接器结构进行设计,包含一个高速1∶2分接器电路和两个低速1∶5分接器电路。芯片采用台湾TSMC的0.25μm混合信号标准CMOS工艺进行设计,后仿真结果表明,所设计电路完全达到了千兆以太网的系统要求,可以工作在1.25Gb/s的数据速率上。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks