高集成小型化中频滤波组件设计与实现

为满足雷达接收机中频滤波器组集成滤波器数量多、集成度高的需求,文中采用三维集成技术,设计了一种小型化LC滤波器电路,并对三维LC滤波器在组件中的应用和集成工艺进行分析和研究.三维LC滤波器采用两个基板,利用三维集成工艺和BGA技术实现两个基板的三维集成组装.将电容元件置于底层基板可实现高密度布局,将电感元件置于顶层基板...     

一种新型的HMSIW宽带带通滤波器

提出一种基于半模基片集成波导和缺陷地结构的新型宽带带通滤波器,将半模基片集成波导的高通特性与改进的哑铃形缺陷地结构的低通特性结合,实现了一种宽带小型化的带通滤波器。仿真与测试结果表明,该滤波器中心频率为5.3 GHz,相对带宽为53%,通带范围内插入损耗小于1.6 dB。该滤波器具有宽带小型化,容易集成等优点。     

宽带基片集成波导滤波器

滤波器是微波毫米波电路与系统中一个重要的部件.提出了一种CMRC加载基片集成波导( substrate integrated waveguide,SIW)滤波器.该滤波器具有体积小、重量轻、容易加工和集成等优点.滤波器的中心频率为5.3 GHz,相对带宽为36%,中心频率处的插入损耗为1.5 dB,仿真与实验结果吻合良好.     

基片集成波导缝隙式滤波器的设计与实现

基于基片集成波导技术和印刷电路板工艺设计、CST软件模拟,实现了一种四缝隙和五缝隙基片集成波导缝隙式滤波器。仿真结果和实验结果吻合良好。滤波器的中心频率分别为15.85GHz和34GHz,相对3dB带宽为11.9%和12.9%,插损分别为1.4dB和2.9dB,且具有良好的选择性。与传统的基片集成波导谐振腔式滤波器相比,这种滤波器可以提供更宽的阻带且便于后期调试。     

基于迭代法的集成模拟滤波器非线性失真分析方法

基于迭代法原理 ,提出一种适用于集成滤波器非线性失真的分析方法 ,得到相当准确的解析表达式 ,可以为集成滤波器设计的改进提供有用的信息。对于一般阶数不高或者以二阶滤波器为单元的电路 ,解析法能够充分发挥其优点。     

宽范围可调MEMS集成滤波器的设计与制作

基于MEMS平面螺旋电感和MEMS可调平行板电容设计并制作了一种宽可调范围的集成可调带通滤波器。理论分析并计算了可调滤波器电感和可调电容的取值范围,利用HFSS设计得到各元件结构参数,并使用AnsoftDesigner分析软件对可调滤波器电路进行了模拟仿真。设计得到的可调滤波器中心频率调节范围为400～700MHz,可调率达75%,实现了宽范围可调,3dB相对带宽范围为5%～10%,插入损耗小于5dB,芯片尺寸为20mm×6mm×0.4mm。给出了一套基于MEMS平面工艺的MEMS集成可调滤波器的制作流程,实现了MEMS集成可调滤波器的工艺制作及测试。测试结果表明,获得的可调滤波器实现了通带频率宽范围可调。     

基片集成波导带通滤波器的设计与实现

基片集成波导技术使得包括平面电路、接头和矩形波导在内的完整电路可以以平面形式集成在印刷电路板上;首先简要介绍基片集成波导这一新技术,然后把矩形波导带通滤波器的设计方法引入基片集成波导中,设计了一个中心频率为35 GHz,相对带宽为2.7%的基片集成波导带通滤波器,CST的数值计算结果显示该途径是成功的。     

基于非谐振节点的基片集成波导滤波器设计

针对微波滤波器小型化和高性能的应用要求,基于非谐振节点技术,提出了一种高选择性的双模基片集成波导带通滤波器。非谐振节点通过带线谐振器实现,可以在源负载之间引入额外的信号传输路径,与传统的双模基片集成波导滤波器相比,该滤波器可以引入额外的传输零点,从而提高滤波器的选择性和带外抑制。此外,带线谐振器嵌入基片集成波导谐振腔的内部,不占据额外的电路面积,使其结构更加紧凑。最后,设计并加工了一款工作频率为28 GHz,相对带宽为1.6%的高选择性带通滤波器。测试结果与仿真结果相一致,表明了所提出设计方法的可行性。     

基片集成波导双频段可调滤波器设计

根据基片集成波导谐振腔微扰原理,设计了一种基片集成波导双频带可调滤波器。通过在基片集成波导谐振腔中插入不同数量的金属铜柱,对电场进行微扰,实现滤波器四个状态可调。滤波器的第一通带由TE101模谐振产生,第二通带由TE_(102)和TE_(201)模谐振产生。为了验证设计的有效性,对可调滤波器进行加工与测试,实测滤波器的中心频率可以在5.25/8.25 GHz、6.40/8.32 GHz、7.90/8.95 GHz、8.20/9.20 GHz变化,插入损耗为-2.1～-3.8 dB,回波损耗小于-10 dB,满足设计要求。该滤波器具有易调谐、与其他平面电路易集成等优势。     

一种槽线扰动的基片集成波导双模滤波器

该文提出一种新型小型化基片集成波导(SIW)双模滤波器。通过使用正交的输入输出馈线,和一段倾斜的槽线来扰动腔体的两个简并模,滤波器能产生两个传输零点(TZ)。采用该方法设计了一个中心频率为15 GHz,带宽为350 MHz的基片集成波导双模滤波器。该滤波器结构简单,成本低廉,易于加工。测试结果和仿真结果吻合,较好地验证了设计的可行性和有效性。     

一种连续通带宽带双工器的研制

设计并制作了工作在2.2～2.8GHz的带状线结构3dB定向耦合器和2只通带分别为2.2～2.5GHz及2.5～2.8GHz的8阶微带发夹线结构带通滤波器,利用该耦合器和带通滤波器设计制作连续通带宽带双工器,并通过ADS进行仿真。由仿真结果可知,在2.2～2.8GHz双工器全频带内输入端口的反射系数S11均优于-17.00dB,通带2.2～2.5GHz带内插损S21最优为-2.09dB,通带2.5～2.8GHz带内插损S31为-2.53dB,其中两通带的交接点2.5GHz处插损约-6.5dB。实测结果与仿真结果基本吻合。     

一种新型基片集成波导腔体滤波器的设计与实现

滤波器是微波毫米波电路与系统中一个重要的部件。利用基片集成波导(substrateintegratedwaveguide——SIW)技术设计并用印制电路板实现了一种应用低阻-高阻短微带线作补偿的基片集成波导滤波器,仿真与实验结果吻合良好,中心频率为5. 8GHz,相对带宽4. 95%,插损小于1. 3dB。该滤波器具有具有体积小、重量轻、容易加工和集成等优点。     

低频窄带陶瓷滤波器

利用低机电耦合系数的压电陶瓷，制作一种低频窄带陶瓷滤波器。这种梯形陶瓷滤波器中心频率为140kHz，具有低插损、高阻带、高选择的特点。为了改进其可靠性，还为这种滤波器设计了一种新颖的组装结构。     

Coplanar waveguide edge-coupled bandpass filters with finite groundplanes

Finite ground plane coplanar waveguide edge-coupled bandpass filters which have no parasitic passband and low insertion loss are demonstrated. Two 5-section filters centred at 10 GHz with a 15% bandwidth with identical design parameters but different ground plane widths; are fabricated on alumina substrate; the measured passband insertion loss is <1.5 dB. The filter with wider ground planes has higher attenuation in its stopbands     

A Hairpin Line Diplexer for Direct Sequence Ultra-Wideband Wireless Communications

A high performance hairpin line diplexer for the direct sequence ultra-wideband communication is designed and implemented. This microstrip diplexer is mainly composed of two hairpin line wideband bandpass filters and a tapped open stub. The design concept is proposed in detail and has been verified by the experimental results of the fabricated diplexer, including the two isolated wideband bandwidths of 3.1-5.0 GHz and 6.02-10 GHz, low insertion loss and high isolation. Experimental results also show a good agreement with the simulated results.     

High-performance microwave coplanar bandpass and bandstop filters on Si substrates

High-performance bandpass and bandstop microwave coplanar filters, which operate from 22 to 91 GHz, have been fabricated on Si substrates. This was achieved using an optimized proton implantation process that converts the standard low-resistivity (/spl sim/10 /spl Omega//spl middot/cm) Si to a semi-insulating state. The bandpass filters consist of coupled lines to form a series resonator, while the bandstop filter was designed in a double-folded short-end stub structure. For the bandpass filters at 40 and 91 GHz, low insertion loss was measured, close to electromagnetic simulation values. We also fabricated excellent bandstop filters with very low transmission loss of /spl sim/1 dB and deep band rejection at both 22 and 50 GHz. The good filter performance was confirmed by the higher substrate impedance to ground, which was extracted from the well-matched S-parameter equivalent-circuit data.     

Post-CMOS Compatible Micromachining Technique for On-Chip Passive RF Filter Circuits

This paper reports on a post-CMOS compatible micromachining technology for passive RF circuit integration. The micromachining technology combines the formation of high-performance microelectromechanical systems solenoid inductors and metal—insulator—metal (MIM) capacitors by using a post-CMOS process on standard CMOS substrate. Utilizing this process, novel on-chip 3-D configured RF filters for 5 GHz band are integrated on-chip. Two types of compact filters are designed and fabricated, with the layout size of the bandpass filter as 0.65 $,times,$0.67 ${rm mm}^{ 2}$ and that of the low-pass filter as 0.77$,{ times },$1.25 ${rm mm}^{ 2}$. From the measurement results, the fifth-order low-pass filter shows less than 1.06 dB insertion loss up to 5 GHz and ${-}{rm 1.5}~{rm dB}$ cutoff frequency at 5.3 GHz. The bandpass filter is a second-order coupled-resonator type, with measured 4.3 dB minimum insertion loss and better than 13 dB return loss in the pass band. Both simulation and shock testing results have shown that the filters are almost free of influence from environmental vibration and shock. From the measured results in various temperatures, the bandpass filters were found to show lower loss under low temperatures, while the passband shift is negligible in the various temperatures. Together with the fabricated filters, the developed micromachining technique has demonstrated the potential of on-chip integration and miniaturization of passive RF circuits.      

Novel half-mode substrate integrated waveguide bandpass filters using semi-hexagonal resonators

In this paper, a novel bandpass filter is presented, designed, and implemented by using a triple mode semi-hexagonal Half-Mode Substrate Integrated Waveguide (HMSIW) cavity, which has the advantages of compact size, low insertion loss, and high selectivity in upper and lower passband. To realize a triple mode filter, the first resonant mode is shifted to near the next two modes using a via hole perturbation. Two microstrip open stubs connected to open edge of HMSIW resonator are introduced to generate two transmission zeros in the lower passband. The position of transmission zeros could be controlled by adjusting the coupling gap between the microstrip open stub resonators. By etching an E-shape slot on the top plate of HMSIW resonator, two other transmission zeros are produced in the upper passband. A wide-band planar six-pole bandpass filter, which has the advantages of wide bandwidth and small size, is also proposed and fabricated by cascading two triple mode resonators. Measured results indicate that 29% and 47% fractional bandwidth, as well as approximately 1 dB and 1.1 dB insertion loss, are achieved for the proposed filters. Measured results of all those filters agree well with the simulated results.     

Bandpass Filters Using Parallel Coupled Stripline Stepped Impedance Resonators

Approximate design formulas for bandpass filters using parallel coupled stripling stepped impedance resonators (SIR) are derived. The formulas take into account the arbitrary coupling length as well as quarter-wavelength coupling. Some advantages of this filter are its abilities to control spurious response and insertion loss by changing the structure of the resonator. Using the design formulas two experimental filters were designed and fabricated and their performances closely matched design data.     

Compact and wideband microstrip bandstop filter

A novel one-section bandstop filter (BSF), which possesses the characteristics of compact size, wide bandwidth, and low insertion loss is proposed and fabricated. This bandstop filter was constructed by using single quarter-wavelength resonator with one section of anti-coupled lines with short circuits at one end. The attenuation-pole characteristics of this type of bandstop filters are investigated through TEM transmission-line model. Design procedures are clearly presented. The 3-dB bandwidth of the first stopband and insertion loss of the first passband of this BSF is from 2.3 GHz to 9.5 GHz and below 0.3 dB, respectively. There is good agreement between the simulated and experimental results.