带数字驱动的高集成2～18GHz时延放大多功能MMIC

基于E/D15PHEMT工艺研制了一款2~18GHz用于相控阵雷达的时延放大多功能MMIC芯片。本芯片是一款集成了放大器、单刀双置开关、六位大波长时延器、数字驱动器等功能的多功能芯片,芯片尺寸为5mm×5mm。测试结果表明:发射接收增益皆大于-2dB,P-1在整个频带内达到12dBm。时延最小步进为10ps,最大时延量630ps,时延精度在发射和接收模式下为标称值的±4%,寄生调幅小于2dB。该芯片能够抗基于HBM的250V静电电压。     

基于SP4T开关的4位MEMS开关线式移相器设计

设计了一款4位MEMS开关线式移相器,由SP4TMEMS开关和微带传输线构成,工作于X波段。单刀四掷(single pole 4throw,SP4T)开关用于切换两条不同电长度的信号通道,即参考相位通道和延迟相位通道。每个SP4T开关包含4个悬臂梁接触式RF MEMS串联开关。介绍了4位MEMS开关线式移相器的总体设计,并给出了其关键部件SP4T开关和相位延迟线的设计细节。采用ADS软件仿真分析了器件的电气性能。仿真分析得到:SP4T开关在中心频率10GHz处的回波损耗为-36dB,插入损耗约为0.18dB;移相器各相位的回波损耗均低于-15dB,插入损耗为-0.8～-0.4dB。这种射频MEMS移相器具有小型化、低功耗和高隔离度的优点。     

一种晶圆级封装的MEMS数控衰减器

设计实现了一种晶圆级封装的三位MEMS数控衰减器，工作频段DC～15 GHz，衰减范围0～35 dB，步进5 dB。衰减器采用MEMS工艺实现，信号传输采用共面波导（CPW）结构，6个直接接触式悬臂梁MEMS开关对称放置实现不同衰减量的切换，每个开关带有三个触点，电阻网络采用T型结构，整个衰减器实现晶圆级封装。测试结果显示，DC～15 GHz频段内实现了8个衰减态，衰减器插入损耗小于1.7 dB，回波损耗小于-15 dB，衰减平坦度小于±5%，功耗几乎为零。芯片尺寸为2.7 mm×2.7 mm×0.8 mm。     

超宽带四通道开关滤波器的设计

基于砷化镓(GaAs)工艺,利用ADS软件仿真设计了一款超宽带四通道开关滤波器芯片,频率覆盖了6GHz～20GHz,尺寸为仅3.2mm×2.4mm×0.1mm.该开关滤波器芯片由两个单刀四掷开关和四个带通滤波器电路组合而成.实物测试结果显示,在通带内插入损耗≤10dB,端口回波损耗≥15 dB,带外抑制达到了40dB....     

一种双波段MEMS低噪声放大器设计

本文利用一种MEMS电容式开关并联实现双波段2．1GHz／4．6GHz微机械低噪声放大器。根据MEMS电容开关的电容特性,实现LNA电路匹配阻抗的变化、在不同的波段实现谐振匹配,从而实现双波段分别放大的功能。首先提出一种电容式开关的设计,理论、仿真分析了开关的特性,开关在2．21GHz和4．8GHz具有良好的插入损耗和隔离度、插损为2．2dB左右,隔离度达到30dB以上。其次将开关引入于基于Casoode放大管的LNA电路中、和CMOS电路具有很好的兼容性,设计了LNA的电路模型和仿真分析、分析结果表明,在频率为2．21GHz时、增益达到11．4dB,4．8GHz时、增益达12．5dB,二波段隔离度在30dB以上、噪声在4．1dB左右,该研究方法和设计克服了普通双波段LNA需要两路单独电路的缺点,该器件可应用在Wimax,WiFi等3．5G、4G无移动通信网络中。     

接触式悬臂梁RF-MEMS开关的研制与数值模拟分析

研究了一种直接接触悬臂梁式RF-MEMS开关,悬臂梁采用Al金属材料.开关通过静电控制,且与信号通道分离.为了优化材料结构和获得好的性能,进行了有限元ANSYS模拟.采用表面微加工工艺来制作开关,获得满意结果.器件的驱动电压为12V,与ANSYS模拟结果11V基本相符;器件的隔离度,在0.05～10GHz的范围内,实验测试与HFSS模拟的结果基本一致,都优于-20dB;器件的插入损耗,HFSS模拟小于-0.2dB,而实验测试小于-0.9dB,偏高是由于悬臂梁表面不平,导致接触电阻增大,在测试中引入接触阻抗所致.     

91～98GHz集成单刀单掷开关设计

为解决W波段接收机保护开关和发射机调制开关芯片问题,本文基于0.1mm厚50.8mm(2英寸)熔制石英薄膜电路工艺,研制出了W波段PIN二极管SPST开关准单片。为了考察开关性能的一致性,随机抽取了5个SPST开关作了测试,在91~98GHz频率范围内,开关插损典型值1.0dB,不一致性小于0.45dB;91~98GHz测得开关隔离典型值25dB,不一致性小于5dB,92.5~94.5GHz隔离典型值32dB;开关响应时间、导通时间、关断时间、恢复时间分别小于18、20、10和18ns;开关尺寸2.8mm×2.6mm。其作为接收保护开关和发射调制开关可集成应用于W波段收发组件中。     

隔离度大于95dB的Ku波段微带型开关

研究了具备高隔离度性能的Ku波段基于PIN二极管的微带型开关电路,通过采用含有多个子单元电路的拓扑结构以及合理优化子单元电路参数,解决了微带型开关在微波频段难以实现高隔离度的难题.所研制的开关电路在15.75～16.25GHz频段范围内.隔离度大于95dB,插入损耗小于4dB,输入端S11均小于-12dB,输出端S22均小于-20dB,电路体积仪为34mmX 11mm×5mm.     

DC-20GHz射频MEMS开关

描述了DC-20GHz射频MEMS开关的设计和制造工艺.开关为一薄金属膜桥组成的桥式结构,形成一个单刀单掷(SPST)并联设置的金属-绝缘体-金属接触.开关通过上下电极之间的静电力进行控制,其插入损耗及隔离性能取决于开态和关态的电容.测试结果如下:射频MEMS开关驱动电压约为20V,在"开”态下DC-20GHz带宽的插入损耗小于0.69dB;在"关”态下在14-18GHz时隔离大于13dB,在18-20GHz时隔离大于16dB.本器件为国内首只研制成功的宽带射频MEMS开关.     

Ka波段4位大波长数控时延器

基于0.15μm E/D PHEMT工艺研制了一款28~32GHz用于相控阵雷达的时延器芯片,该芯片是由4位大波长数控时延器及数字驱动器电路组成。为了增强芯片在组件中使用的灵活性,计划分成两块芯片来实现。芯片尺寸分别为1.9mm×2.2mm和2.9mm×2.2mm。实测结果:芯片总插入损耗小于24dB,在28~32GHz带宽内时延步进为33.3ps,最大时延量为500ps,时延精度小于标称值的±3%,寄生调幅小于±0.4dB。该芯片能够抗基于HBM的250V静电电压。     

A 2-bit miniature X-band MEMS phase shifter

The design and performance of a compact low-loss X-band true-time-delay (TTD) MEMS phase shifter fabricated on 8-mil GaAs substrate is described. A semi-lumped approach using microstrip transmission lines and metal-insulator-metal (MIM) capacitors is employed for the delay lines in order to both reduce circuit size as well as avoid the high insertion loss found in typical miniaturized designs. The 2-bit phase shifter achieved an average insertion loss of -0.70 dB at 9.45 GHz, and an associated phase accuracy of /spl plusmn/1.3/spl deg/. It occupies an area of only 5 mm/sup 2/, which is 44% the area of the smallest known X-band MEMS phase shifter . The phase shifter operates over 6-14 GHz with a return loss of better than -14 dB.     

A hybrid phase shifter circuit based on TlCaBaCuO superconductingthin films

A superconductor-semiconductor hybrid reflection-type phase shifter circuit has been designed, fabricated, and characterized for 180° phase bit with center frequency of 4 GHz and bandwidth of 0.5 GHz for operation at 77 K. All of the passive components of the phase shifter circuit such as input/output feed lines, 3 dB Lange coupler, impedance matching networks, and transmission lines consisted of thallium based superconducting TlCaBaCuO thin films of 4000 Å thickness on lanthanum aluminate substrate. Metal-Schottky field-effect-transistors (MESFET's) on GaAs semiconductor were used as active devices for switching action (on-state and off-state) in the phase shifter circuit. The phase shift and insertion losses were investigated as a function of frequency from 3.6 to 4.6 GHz at 77 K. The circuit exhibited a fairly flat response of 180° phase shift with a maximum deviation of less than 2° and a maximum insertion loss of 2 dB for on-state and 2.2 dB for off-state conditions over 0.5 GHz bandwidth at 4 GHz. The insertion losses were also fairly flat within the bandwidth. The insertion losses were constant between 50 and 80 K, giving the circuit a large range of operation at or below 77 K. The performance of this circuit as compared to a gold microstrip-semiconductor circuit designed identically was superior by a factor of 1.5, and may be due to lower conductor losses and lower surface resistance in the superconducting microstrips     

A Ku‐Band 5‐Bit Phase Shifter Using Compensation Resistors for Reducing the Insertion Loss Variation

This paper describes the performance of a Ku‐band 5‐bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5‐bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than 7.5° root‐mean‐square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5‐bit phase shifter, the insertion losses were 8.2 ± 1.4 dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5‐bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm × 1.65 mm. The packaged phase shifter demonstrated a phase error of less than 11.3° RMS, measured insertion losses of 12.2 ± 2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm × 6.20 mm.     

适于毫米波应用的新型MEMS实时延时线(英文)

介绍了两种适于毫米波应用的RF MEMS实时延时线的设计。首先,在设计中采用了一种新颖的RF MEMS拓宽调节范围的变容器结构,得到了最大变容比为5.39的在片测试结果。其工艺设计基于表面微机械工艺,采用了由5个掩模版组成的工艺流程。然后,在RF MEMS变容器设计的基础上,完成了用于原理论证的Ka波段RF MEMS实时延时线的仿真设计、工艺流片和在片测试。Ka波段RF MEMS实时延时线的在片测试结果显示,在28GHz时处于下降状态的插入损耗为-2.36dB;两端口在28GHz时的回波损耗都小于-15dB,而在5～40GHz的整个测试频率范围内的回波损耗都小于-10dB。在Ka波段RF MEMS实时延时线设计基础上,60GHz RF MEMS实时延时线的仿真设计已经完成并准备投片。     

Millimetre-wave wideband reflection-type CPW MMIC phase shifter

A reflection-type coplanar waveguide (CPW) phase shifter fabricated using a standard monolithic microwave integrated circuit (MMIC) process is presented. Air-gap overlay CPW couplers were employed for wideband 3 dB coupling and low loss at millimetre wave. The two-stage cascaded analogue phase shifter showed insertion losses of 6.9 ± 1.6 dB, return losses > 10 dB, and maximum rms phase error of +5.5° for the relative phase shift from -20° to 135°, over a wideband 27 to 47 GHz     

毫米波数控移相器的设计与制作

移相器是毫米波相控阵雷达收发系统重要电路,基于安捷伦IC-CAP软件及砷化镓原片工艺线,研究了砷化镓毫米波开关器件测试、建模技术及其应用。采用0.15μm GaAs PHEMT工艺成功制作了一款Ka波段5位数控移相器MMIC,对毫米波数控移相器MMIC集成电路的设计、制作过程进行了阐述,并给出了测试结果。电路设计采用了开关滤波拓扑结构,运用微波探针在片测试系统对芯片进行了实测,在34~36 GHz范围内获得了优异的电性能。给出了移相器的测试曲线,32态均方根移相误差(RMS)5°,插入损耗典型值8 dB,输入/输出电压驻波比系数典型值2,芯片尺寸为2.5 mm×1.5 mm×0.1 mm。     

一种6~18 GHz宽带高精度有源移相器

设计了一种6 bit 6~18 GHz工作频段的宽带高精度有源移相器。片上集成了输入无源巴伦、逻辑编码器、RC多相滤波器、矢量合成单元、数控单元等。该移相器的设计采用55 nm CMOS工艺实现,芯片尺寸为1.29 mm×0.9 mm,移相器核心尺寸为1.02 mm×0.58 mm。后仿结果表明,在6~18 GHz频率范围内,增益误差RMS值小于1 dB,相位误差RMS值小于0.75°,输入回波损耗、输出回波损耗分别小于-8.5 dB、-8.9 dB,芯片总功耗为20.7 mW。该6 bit移相器的相对带宽为100%,覆盖C、X和Ku波段,适用于雷达探测等领域。     

A Novel Miniature 1–22 GHz 90° MMIC Phase Shifter with Microstrip Radial Stubs

A novel miniature ultra wide bandwidth 90 monolithic microwave integrated circuit phase shifter with microstrip radial stubs operated from 1 to 22 GHz is presented. The phase shifter exhibits a high performance. Within the whole bandwidth from 1 to 22 GHz, the phase error of the phase shifter is less than 3deg, the return losses of the different phase shift states are more than 14 dB, the insertion loss of all phase shift states are within 3.3plusmn0.5 dB. The chip size of this phase shifter is 1.4 mm times 1.8 mm times 0.1 mm. The proposed phase shifter can be compatible with different polarity control signals without the need of drivers and can also be compatible with either analogue or digital control signals.     

11.25°毫米波数字移相器的设计

设计了一种Ka波段11.25°数字移相器。采用一前一后加载支线的方式,在Ka波段内研制出11.25°数字移相器。该移相器在30～31GHz工作频带内,驻波比小于1.65,插入损耗小于3dB,固定相移11.25°,相位精度达到±3°。     

A DC to 10-GHz 6-b RF MEMS time delay circuit

A 6-b radio frequency (RF) microelectromechanical system (MEMS) time-delay circuit operating from dc to 10 GHz with 393.75-ps total time delay is presented. The circuit is fabricated on 250-/spl mu/m-thick alumina and uses metal contacting RF MEMS switches to realize series-shunt SP4T switching networks. The circuit demonstrates 1.8+/-0.6 dB of loss at 10 GHz and has linear phase response across the entire band with accuracy of better than a least significant bit for most states.