Nd3+A位置换对(Pb0.5Ca0.5)(Fe0.5Nb0.5)O3陶瓷微波介电性能的影响

研究了Nd3+离子A位置换改性(Pb0.5Ca0.5)(Fe0.5Nb0.5)O3陶瓷的微波介电性能.[(Pb0.5Ca0.5)1-xNdx](Fe0.5Nb0.5)O3(PCNFN)陶瓷的微波介电性能得到改善是由于少量过剩的Nd3+与(Pb,Ca)2+的固溶能够消除氧空位.当x=0.02时,能够形成单相的钙钛矿相,随着Nd3+置换量的增加,过剩的Nd3+将导致第二相焦绿石的形成,焦绿石会恶化PCNFN的微波介电性能.PCNFN介电性能随x的增加而下降是由于焦绿石相随x增加的结果.当x=0.02-0.05,PCNFN陶瓷有很好的微波介电性能,介电常数K>100,Qf值为5385-5797GHz,频率温度系数TCF随Nd3+含量的增加从正的变为负的.     

Preparation of Pb(Mg1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3 ceramics by the B-site precursor method and dielectric characteristics

Powders in the Pb(Mg1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3 system, with a high perovskite yield, were prepared by a B-site precursor method. PbO was added to pre-reacted B-site components of Mg1-xZnxNb2O6 solid solution, which was further calcined to form a perovskite structure. Perovskite phase contents and lattice parameters were obtained from X-ray analyses. Weak-field low-frequency dielectric constants and losses of sintered pellets were measured as functions of composition, temperature and frequency. Dielectric relaxation behaviours were investigated in terms of diffuseness coefficients. Microstructures were observed to correlate with other characteristics. © 1998 Chapman & Hall     

Dielectric properties of rutile structure (Zn₁/₃B₂/₃)x(TiySn(1-y))(1-x)O₂ (B=Nb⁵+,Ta⁵+) at microwave frequencies

The microwave dielectric properties of rutile (Zn?/? B?/?)x(TiySn(1-y))(1-x)O? (B=Nb?+,Ta?+, 0.05 ≤ x ≤ 0.35, y = 0.2, 0.8) were investigated with structural characteristics. A single phase with tetragonal rutile (P4?/mnm, no. 136, Z = 2) structure was obtained through the entire range of compositions. With an increase of (Zn?/?B?/?)O? content, the dielectric constant (K) of sintered specimens with (Ti?.?Sn?.?)O? increased, whereas that of the specimens with (Ti?.?Sn?.?)O? decreased. The temperature coefficient of resonant frequency (TCF) of sintered specimens was dependent upon oxygen octahedral distortion and/or cations bond valence of the rutile structure. The quality factor (Qf) was dependent upon (Zn?/?B?/?)O? content, and the specimens with (Ti?.?Sn?.?)O? showed larger Qf values than those with (Ti?.?Sn?.?)O? for the same content of (Zn?/?B?/?)O?.     

Complete set of material properties of [011](c) poled 0.24Pb(In(1/2)Nb(1/2))O(3)-0.46Pb(Mg(1/3)Nb(2/3))O(3)-0.30PbTiO(3) single crystal

A complete set of elastic, piezoelectric, and dielectric constants of [011](c) poled multidomain 0.24Pb(In(1/2)Nb(1/2))O(3)-0.46Pb(Mg(1/3)Nb(2/3))O(3)-0.30PbTiO(3) ternary single crystal has been determined using resonance and ultrasonic methods and the temperature dependence of the dielectric permittivity has been measured at 3 different frequencies. The experimental results revealed that this [011](c) poled ternary single crystal has very large transverse piezoelectric coefficient d(32) = -1693 pC/N, transverse dielectric constant ε(11)/ε(0) ~ 7400 and a high electromechanical coupling factor k(32) ~ 90%. In addition, its coercive field is 2 times of that of the corresponding binary 0.7Pb(Mg(1/3)Nb(2/3))O(3)-0.30PbTiO(3) single system with much better temperature stability. Therefore, the crystal is an excellent candidate for transverse mode electromechanical devices.     

Dielectric Properties of Ba0.6Sr0.4TiO3-La(B0.5Ti0.5)O3 (B=Mg, Zn) Ceramics

Ba_0.6Sr_0.4TiO₃-La(B_0.5Ti_0.5)O₃ (B = Mg, Zn) ceramics were prepared by a solid-state reaction method, and their microwave dielectric characteristics and tunability were investigated. The ferroelectric-dielectric solid solutions with cubic perovskite structures were obtained for compositions of 10 to 60 mol% La(Mg_0.5Ti_0.5)O₃ and 10 to 50 mol% La(Zn_0.5Ti_0.5)O₃. With the increase of linear oxide dielectric content, the dielectric constant and tunability were decreased and Qf was increased. Ba_0.6Sr_0.4TiO₃-La(Mg_0.5Ti_0.5)O₃ has better dielectric properties than Ba_0.6Sr_0.4TiO₃-La(Zn_0.5Ti_0.5)O₃. 0.9Ba_0.6Sr_0.4TiO₃-0.1La(Mg_0.5Ti_0.5)O₃ has a dielectric constant ε = 338.2, Qf = 979 GHz and a tunability of was 3.7% at 100 kHz under 1.67 kV/mm. The Qf value of 0.5Ba_0.6Sr_0.4TiO₃- 0.5La(Mg_0.5Ti_0.5)O₃ reached 9367 GHz, but the tunable properties were lost.     

Effect of Sn4+ B-Site Substitution on the Microstructure and Dielectric Properties of Ba(Mg1/3Ta2/3)O3 Microwave Ceramics

1.IntroductionRecent progress of microwave telecommunication de-mands the development and application of a variety ofmicrowave dielectric materials.The materials with highdielectric constant(ε),high quality factor(Q)and smalltemperature coefficient of resonant frequency(TCF)haveattracted the greatest interest of researchers.The com-pounds Ba(B'1/3B"2/3)O3(B'=Mg,Zn,Ni,etc.B"=Ta,Nb,etc.)with complex perovskite structure exhibit veryhigh Q value at microwave frequencies greaterthan10GHz.…     

Dielectric characterization of BaTiO3-BaM1/3N2/3 O3 systems (with M=Co,Mg and N=Nb or Ta)

The dielectric behaviour of (1–x)BaTiO₃–x BaM_1/3N_2/3O₃ systems, in which M=Co, Mg and N=Nb, Ta is described whenx varies from 0 to 0.1. The evolution of the Curie temperature and of the dielectric constant, either in the ferroelectric state or in the paraelectric state are correlated to the structure and the ceramic microstructure. An observed diffuse phase transition is discussed.     

Electromechanical properties of fine-grain, 0.7 Pb(Mg(1/3)Nb(2/3))O3-0.3PbTiO3 ceramics

A fine grain, relaxor-based piezoelectric ceramic 0.7 Pb(Mg(1/3)Nb(2/3))O3-0.3PbTiO3 (PMN-30% PT) has been investigated, which was fabricated using the columbite precursor method. The complete set of electromechanical properties of the piezoceramic at room temperature is determined using a combination of ultrasonic and resonance techniques. This fine-grain ceramic (grain size < or = 2.5 microm) exhibits ultra-high dielectric permittivity (epsilon33(T)/epsilon0 approximately 7000) and a high coupling coefficient k(33) (= 0.78). Ultrasonic spectroscopy was used to measure the dispersion of the phase velocity and attenuation for the longitudinal wave propagating in the poling direction. Lower attenuation and smaller velocity dispersion were observed compared to modified Pb(Zr(x)Ti(1-x)O3 (PZT-5H) ceramics. The measurement results show that this fine-grain PMN-30% PT ceramic is a very good material for making ultrasonic array transducers.     

Formation and microwave dielectric properties of Sr(Ga0.5Ta0.5)O3-based complex perovskites

The Sr(Ga0.5Ta0.5)O3-based perovskites with O2- and/or Sr2+ vacancies were formed by changing the A-site and/or B-site cation ratios. The Sr-deficient perovskites with a limited composition of Sr0.86(Ga0.36Ta0.64)O3 could be obtained, whereas oxygen vacancies were hardly created. The B′-site Ga3+ cation could be replaced with large Sc3+, In3+, Y3+, Nd3+ and La3+. The crystal symmetry of the complex perovskites changed from cubic (B′=Ga3+, Sc3+, In3+) to tetragonal (B′=La3+) through rhombohedral (B′=Y3+, Nd3+). The dielectric permittivities of these ceramics indicated no distinct dependence on the B′-site cation species. The temperature coefficient of permittivity might be associated with the symmetry change of the perovskite phases. Higher microwave Qf values, >Qf=38 000 GHz, were obtained for our complex perovskite ceramics, except with B′=La3+. This revised version was published online in July 2006 with corrections to the Cover Date.     

Synthesis and characterisation of the double perovskite Ba2(Zn0.5Ti0.5X)O6 (X = Nb, Ta) ceramics

Ba₂(Zn_0.5Ti_0.5X)O₆ compounds from the general ABO₃ perovskite family were synthesized by the classical solid-state route for X = Nb and Ta with various A/B ratios (1.005, 1 and 0.995). After the calcination step at 1100 °C, both compounds (X = Nb and Ta) contain mainly the cubic disordered ‘Ba₂(Zn_0.5Ti_0.5X)O₆’ phase but traces of BaTiO₃ and secondary phases are often detectable. Nevertheless, after the sintering stage at higher temperature (from 1300 to 1500 °C) and for all A/B ratios investigated, Ti enters into the cubic perovskite structure, resulting in the formation of a unique ‘Ba₂(Zn_0.5Ti_0.5X)O₆’ phase. Attractive dielectric properties have been measured on the tantalum-based compound for A/B = 0.995 (Q ∼2000 at 7.4 GHz and ? = 39.6) as well as on the niobium-based phase for A/B = 1.005 (Q ∼2200 at 6.1 GHz and ? = 54.8). All these characteristics were confirmed at 1 MHz and a linear dependence of the permittivity versus temperature from −60 to 180 °C has also been evidenced for both formulations. Sinterability, dielectric properties and microstructure of such compounds are discussed with respect to the stoichiometry.     

Crystallographic and dielectric aspects of Pb[(Mg,Zn)1/3Ta2/3]O3 system with 40 at.% Nb substitution

A total of 40 at.% Nb was substituted for Ta in the Pb[(Mg,Zn)_1/3Ta_2/3]O₃ system in order to enhance perovskite development. System powders were prepared by a B-site precursor method. Perovskite formation yields and lattice parameters of the pyrochlore/perovskite structures were determined from X-ray diffraction results. Weak-field low-frequency dielectric responses of the system ceramics were investigated as functions of temperature, composition, and frequency. Phase transition modes reflected in the dielectric constant spectra were further analyzed in terms of diffuseness parameters.     

氧化铅含量对富铅气氛烧结的Pb(Zn1/3Nb2/3)O3基陶瓷介电性能的影响

从不同含量的ＰｂＯ初始粉体出发并在烧结时维持铅气氛的情况下,用二次合成法制备了０．７５Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－０．１５ＢａＴｉＯ３－０．１０ＰｂＴｉＯ３三元系固溶体陶瓷,研究了初始粉体中不同的氧化铅含量对在铅气氛条件下烧结的该体系陶次的介电性能的影响。实验表明在富铅气氛的作用征,微量氧化铅欠缺的初始粉体所制备出的陶瓷具有较好的介电性能,尤其是当初始粉体中氧化铅欠缺５％时的陶瓷具有最大的峰值介电常数。     

Role of Mn in controlling the dielectric loss and ageing effect in Pb(Zn1/3Nb2/3)O3–Pb(Fe2/3W1/3)O3–Pb(Fe1/2Nb1/2)O3

Compositions in the Pb(Zn1/3Nb2/3)O3–Pb(Fe2/3W1/3)O3–Pb(Fe1/2Nb1/2)O3 (PZN–PFW–PFN) system show a high dielectric constant, insulation resistance and bend strength. In addition they can be sintered at very low temperatures. Hence they find technological applications as multilayer capacitors with low cost Ag-based internal electrodes. The dielectric loss in these ceramics was controlled by doping with Mn in the form of Mn-acetate, MnO2, and Pb(Mn1/3Nb2/3)O3. The subtle differences in the dielectric properties of PZN–PFW–PFN, when Mn is taken in these forms are reported in this paper. A possible way of controlling the ageing effect is highlighted. © 1998 Chapman & Hall     

Low-firing and microwave dielectric properties of Ba[(Ni0.6Zn0.4)0 .33Nb0.67]O3 ceramics doped with Sb2O5 and B2O3

The purpose of this study was to reduce the sintering temperature of Ba[(Ni0.6Zn0.4)0.33Nb0.67]O3 ceramics by doping with Sb2O5 and B2O3. Phase formation and dielectric properties were analyzed using X-ray diffraction and the post resonator method (10 GHz), respectively. It was observed that an addition of 1 mol % Sb2O5 or 1 mol % B2O3 was very effective in reducing the sintering temperature from 1500 to 1300 °C. However, these samples showed a temperature coefficient of resonant frequency far from 0 ppm/°C. The two additions produced a temperature coefficients with opposite signs. The combination of the two dopants produced a temperature coefficient very close to 0 ppm/°C as well as a better quality factor.     

(1-x)(Mg0.7Zn0.3)TiO3-xCa0.61La0.26TiO3系陶瓷的微波介电性能研究（英文）

本实验研究了(1-x)(Mg0.7Zn0.3)TiO3-x(Ca0.61La0.26)TiO3(MZT-CLT)系陶瓷的微观结构和微波介电性能,通过(Ca0.61La0.26)TiO3来协调(Mg0.7Zn0.3)TiO3陶瓷的谐振频率温度系数.MZT-CLT陶瓷的主晶相为(Mg0.7Zn0.3)TiO3,第二相为Ca0.61La0.26TiO3和(Mg0.7Zn0.3)Ti2O5.烧结温度和陶瓷组成对微波介电性能影响显著,当烧结温度为1275℃时,可以获得良好的致密度,当烧结温度超过1300℃时,Zn的蒸发导致陶瓷致密度和介电性能下降.随着(Ca0.61La0.26)TiO3含量的增大,材料的介电常数增大,品质因数减小.当x=0.13,烧结温度为1275℃保温4h,(MZT-CLT)陶瓷具有优良微波介电性能,εr=26,Q.f=86000 GHz,τf=-6×10-6/℃.     

Ti4+取代Zn2+、Nb5+对Bi2O3-ZnO-Nb2O5系介质材料结构和性能的影响

研究了Ti4 取代Zn2 ,Nb5 对Bi2O3-ZnO-Nb2O5系介质材料结构和性能的影响，研究表明，少量替代对于材料的结构和性能没有太大的影响；随着替代量的增加，相结构中出现正交Bi4Ti3O12相；微观形貌中出现棒晶，介电常数逐渐增大，温度系数逐渐向负温度系数方向移动，适量Ti4 替代可以获得性能很好的NP0介质材料。     

Effect of B2O3 additive on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 ceramics

Journal of Materials Science: Materials in Electronics - This paper reported a research of the sinterability, microstructures, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) ceramics...     

Effect of V(2)O(5) on the sintering behavior, microstructure, and electrical properties of (Na(0.5)K(0.5))NbO(3) ceramics

Well-sintered (Na(0.5)K(0.5))NbO(3)-x mol% V(2)O(5) ceramics (abbreviated as NKN-V) with fine electrical properties were successfully prepared by conventional solid-state reaction through the careful control of processing conditions. The sintering behavior, phase structure, and electrical properties of the V(2)O(5)-doped NKN ceramics were investigated. Results show that when the V(2)O(5) content is 0.6 mol%, the NKN ceramics attained the maximum density of 4.46 g/cm(3) (about 98.9% of the theoretical density) at 1060 degrees C, and therefore possessed enhanced electrical properties. But when the V(2)O(5) content continued increasing, the density decreased. The secondary phase (Na(2)V (6)O(16)) could be detected by XRD analysis in all samples except x = 0 mol%. The Curie temperature of the NKN-based materials was found to decrease with the increase of V(2)O(5). The dielectric properties of NKN ceramics doped with 0.6 and 0.9 mol% V(2)O(5) were better than that of pure NKN ceramics. In addition, annealing treatment was proved to be an effective technique for improving dielectric properties and reducing the leakage current density.     

锶镁共掺对Na0.5Bi0.5TiO3氧离子导体电学性能的影响分析

通过固相反应法制备单一结构的锶镁共掺的Na0.5Bi0.48Sr0.02Ti0.98Mg0.02O2.97氧离子导体,利用交流阻抗谱和内耗温度谱分别研究锶镁共掺对Na0.5Bi0.5TiO3材料晶粒电导率及氧离子扩散的影响。在593K时,Na0.5Bi0.48Sr0.02Ti0.98Mg0.02O2.97材料的晶粒电导率可以达到5.31×10^-4S/cm,比母体Na0.5Bi0.5TiO3材料在同温度下的晶粒电导率高一个数量级,甚至超过了Na0.5Bi0.5Ti0.98Mg0.02O2.98样品在673K温度下的晶粒电导率。在锶镁共掺的Na0.5Bi0.48Sr0.02Ti0.98Mg0.02O2.97材料中观察到一个氧弛豫内耗峰,其弛豫参数为:E=0.85eV,τ0=7.4×10^-14s。结合弛豫参数和结构分析,Sr^2+的掺杂在一定程度上可以增大氧离子扩散的自由体积,较大的自由体积、较高的可动氧空位浓度和较好的氧空位可动性是NBT-SrMg2样品晶粒电导率相较于NBT-Mg2样品大幅提高的主要原因。     

(1-x)(Mg0.9Zn0.1)TiO3-x(Ca0.61La0.26)TiO3系微波介质陶瓷的改性研究

实验研究了(1-x)(Mg0.9 Zn0.1)TiO3-x(Ca0.61La0.26)TiO3(MZCLT)系陶瓷的微观结构和微波介电性能.目的是通过(Ca0.61 La0.26)TiO3协调(Mg0.9Zn0.1)TiO3陶瓷的谐振频率温度系数.MZCLT陶瓷的主晶相为(Mg0.9Zn0.1)TiO3和Ca0.61L...