前驱气体CH4,N2的流量比对CHx,膜Raman谱的影响

沉积在Ｓｉ（１００）基片上的ＣＮｘ膜是用微波等离子体化学气相沉积法（ＭＷＰＣＶＤ）制备的，本文着重探讨了ＣＨ４，Ｎ２的流量比对ＣＮｘ膜的Ｒａｍａｎ谱的影响，并采用Ｘ－射线光电子能谱（ＸＰＳ）方法分析了ＣＮｘ膜的化学状态。     

Si对TiSiN膜组成结构的影响

报告了等离子化学气相沉积（ＰＣＶＤ）硬膜ＴｉＳｉＮ中Ｓｉ对膜的影响。沉积膜经过电子探针（ＥＭＰＡ）、扫描电镜（ＳＥＭ）、Ｘ射线（ＸＲＤ）和Ｘ光电子谱（ＸＰＳ）分析。实验表明,在ＴｉＮ的气相沉积中加入少量Ｓｉ可以明显改善膜的结构和组成。     

rf-dc PECVD制备的a-C∶H(N)薄膜的结构分析

采用射频－直流等离子增强化学气相沉积技术用Ｃ２Ｈ２和Ｎ２气的混合气体制备出ａ－Ｃ∶Ｈ（Ｎ）薄膜,用ＴＥＭ、红外谱、ＸＰＳ等多种分析测试手段研究了薄膜的结构。结果表明ａ－Ｃ∶Ｈ（Ｎ）薄膜中Ｎ与Ｃ原子可形成ＮＣ、ＣＮ和ＮＣ键,而碳氢原子主要以ＣＨ２基的形式存在。且薄膜中存在具有理想化学配比的Ｃ３Ｎ４相,薄膜的结构是由Ｃ３Ｎ４相镶嵌在非晶态ＣＮｘ基体中组成     

低掺铝TiN薄膜的XPS,XRD分析研究

本文用多弧离子镀方法制备了Ｔｉ１－ｘＡｌｘＮ（ｘ＜０．３）薄膜，并且运用俄歇电子能谱（ＡＥＳ），Ｘ射线光电子能谱（ＸＰＳ），Ｘ射线衍射（ＸＲＤ）和扫描电子显微镜（ＳＥＭ）等技术对Ｔｉ１－ｘＡｌｘＮ进行测试和分析。结果表明：膜层中除含Ａｌ、Ｔｉ、Ｎ元素外，还出现了一定量的氧；薄膜呈现了（１１１）、（２２２）等晶面的择优取向；薄膜与基底间的附着力较好。     

高氢稀释硅烷加乙烯法制备纳米硅碳薄膜

在等离子体化学气相沉积系统（ＰＥＣＶＤ）中，使用高氢稀释硅烷（ＳｉＨ４）加乙烯（Ｃ２Ｈ４）为反应气氛制备了纳米硅碳（ｎｃ－ＳｉＣｘ＾２Ｈ）薄膜，随着（Ｃ２Ｈ４＋ＳｉＨ４）／Ｈ２（Ｘｇ）从５％时，由于Ｈ蚀刻效应的减弱，薄膜的晶态率从４８％下降到８％，平均晶粒尺寸在３．５－１０ｎｍ。当Ｘｇ≥６％时，生成薄膜为非晶硅碳（ａ－ＳｉＣｘ＾２Ｈ）薄膜。ｎｃ－ＳｉＣｘ＾２Ｈ薄膜的电学性质具有与薄膜的晶态率紧密相     

rf—dc PECVD制备的a—C：H（N）薄膜的结构分析

采用射频－直流等离子增强化学气相沉积技术用Ｃ２Ｈ２和Ｎ２气的混合气体制备出ａ－Ｃ：Ｈ（Ｎ）薄膜,用ＴＥＭ、红外谱、ＸＰＳ等多种分析测试手段研究了薄膜的结构。结果表明ａ－Ｃ：Ｈ（Ｎ）薄膜中Ｎ与Ｃ原子可形成Ｎ－Ｃ、Ｃ＝Ｎ和Ｎ≡Ｃ键,而碳氢原子主要以ＣＨ２基的形式存在。且薄膜中存在具有理想化学配比的Ｃ３Ｎ４相,薄膜的结构是由Ｃ３Ｎ４相镶嵌在非晶态ＣＮｘ基体中组成。     

艺参数对 a-CNx膜沉积的影响

研究了基本工艺参数对磁控溅射制备无定形氮化碳（ａ－ＣＮｘ）薄膜沉积的影响．实验结果表明：Ｎ２流量的增加提高了膜的沉积速率,同时提高了膜中氮含量．溅射功率的提高增加了沉积速率．偏压对硬质膜的制备是一关键的工艺参数,它不仅使薄膜致密、表面光滑,而且还可以提高膜中的Ｎ含量．     

聚乙烯醇缩甲醛（PVF）有机膜上沉积金属膜的XPS研究

介绍了在聚乙烯醇缩甲醛（ＰＶＦ或Ｆｏｒｍｖａｒ）膜上蒸镀Ａｕ，Ｐｄ和Ａｇ金属膜，用ＸＰＳ研究其表面与界面的化学组分与价态。实验发现，在ＰＶＦ膜上蒸膜上Ａｕ，Ｐｄ和Ａｇ后，三咱不同价态的ＣＩＳ相对含量均发生变化。表明金属原子在ＰＶＦ膜上沉积上是化学吸附。 ＰＳ     

ZSM—5沸石膜的合成与表征

叙述了沸石膜的发展与应用,综述了 Ｚ Ｓ Ｍ － ５ 沸石膜的合成、修饰与表征方法．制备膜最常用的方法为水热法在载体上直接就地合成．气相化学沉积法（ Ｃ Ｖ Ｄ） 、溶胶－ 凝胶法（ｓｏｌ － ｇｅｌ） 以及合成后积炭等方法被用来对膜的缺陷进行修饰．膜的表征手段为 Ｘ Ｒ Ｄ、 Ｓ Ｅ Ｍ、气体渗透等     

反应溅射Si-C-N薄膜的结构分析

本文用射频反应磁控溅射制备了ＳｉＣＮ薄膜,对薄膜的化学成分、结构进行了研究。结果表明,反应气体Ｎ２、Ｓｉ、Ｃ三者之间形成了Ｓｉ－Ｃ,Ｓｉ－Ｎ和Ｃ－Ｎ键,构成了复杂的网络结构。成分分析表明薄膜的化学计量式近似为ＳｉＣＮ。对比分析了反应应溅射制备ＳｉＣＮ、ＣＮｘ、ＳｉＮｙ、ＳｉＣｘ薄膜的ＦＴＩＲ谱。     

真空磁过滤弧沉积碳氮薄膜的研究

本文采用真空磁过滤弧沉积技术，在Ｓｉ，石英及Ｔｉ／Ｃ衬底上制备得到非晶碳氮薄膜。采用卢瑟福背散射分析对薄膜的面密度及Ｎ含量进行定量计算。用紫外－可见透射光谱与红外反射光谱研究了薄膜的光学性能。     

磁控溅射参数对CNx薄膜成分,化学结合状态和硬度的影响

应用直流非平衡磁控溅射系统在不同实验条件下制备了ＣＮｘ薄膜材料，其最大氮原子百分含量为３７％，通过傅里叶变换红外光变。Ｘ光光电子能谱以及显微压痕法的测量和分析，对得到的ＣＮｘ薄膜材料中的原子化学结合状态，硬度等性质进行了表征。     

Deposition of amorphous CN(x) materials in BrCN plasmas: exploring adhesion behavior as an indicator of film properties

Adhesion and delamination behavior of amorphous carbon nitride (a-CN(x)) is critical to development of wear resistant materials and protective coatings. Here, the composition and delamination behavior of a-CN(x) films was explored utilizing BrCN, CH?CN, and CH? as film precursors, either alone or in combination with one another. Film delamination depends on film thickness and plasma composition as well as post deposition treatment conditions. Delamination is not observed with films deposited from 100% CH?CN discharges, whereas films of similar thickness deposited from 100% BrCN plasmas delaminate almost immediately upon exposure to atmosphere. Exploration of these differences in delamination behavior is discussed relative to contributions of humidity, hydrocarbon species, and ion bombardment during deposition in conjunction with compositional studies using X-ray photoelectron spectroscopy (XPS).     

铜在甲胺-铁氰化钾化学机械抛光液中的腐蚀与钝化

用电化学测试技术研究了腐蚀介质和成膜剂浓度对铜表面的腐蚀与钝化成膜的影响,分析了钝化膜的成分,探讨了钝化膜在抛光压力和转速作用下的磨损与表面再钝化的行为,测量了铜在化学机械抛光过程中的极化曲线。结果表明铜在甲胺溶液介质铁氰化钾抛光液中易钝化,钝化膜的主要成分为Cu4[Fe(CN)6],有少量Cu20存在。钝化膜的磨损特性随成分浓度不同而不同。钝化膜的磨损难易程度与钝化膜的本身特性、抛光压力及转速有关。抛光过程中因钝化膜被磨损,腐蚀加快,腐蚀电流密度大幅增加。配方0．1％甲胺溶液 0．5％K3Fe(CN)6 5％Al2O3可行。     

Study of adhesion of carbon nitride thin films on medical alloy substrates

The adhesion improvement of biocompatible thin films on medical metal alloy substrates commonly used for joint replacement implants is studied. Diamond-like carbon (DLC) and carbon nitride (CN) thin films are, because of their unique properties such as high hardness, wear resistance and low friction coefficient, candidates for coating of medical implants. However, poor adhesion on substrates with high thermal expansion coefficient limits their application. We deposited CN films by pulsed DC discharge vacuum sputtering of graphite target on CoCrMo and Ti6Al4V substrates. Surface nitridation of the substrate, changing the deposition parameters and use of interlayer led to improved adhesion properties of the films. Argon and nitrogen gas flow, thickness of the film and frequency of the deposition pulses had significant influence on the adhesion to the substrate. Properties of deposited films were analyzed using Scanning Electron Microscopy, Raman spectroscopy and tribology tests.     

Carbon nitride films on diamond layers and their thermal behavior

A CN/diamond composite structure on silicon substrate was obtained by a two-step technique in preparing polycrystalline diamond layers by microwave plasma assisted chemical vapor deposition and then CN films by reactive rf magnetron sputtering. The samples were annealed at different temperatures in the range of 200 to 800 °C, respectively. All the as-grown and annealed CN films, which fully covered the diamond underlayer with the formation of a rather adhesive interface, exhibited amorphous nature uniquely. X-ray photoelectron spectroscopy and energy-dispersive x-ray studies both revealed that the nitrogen concentration of the films decreases after annealed at high temperature. Infrared spectra also suggested the thermal modifications on the content and structure of the CN films. The electric resistivity varies in a large range as the annealing temperature increasing, and confirmed the bonding configuration in favor of a graphite-like structure at high temperature.     

Magnetic Field Effects on Surface Morphology and Magnetic Properties of Co–Ni–N Thin Films Prepared by Electrodeposition

The surface morphology and magnetic properties of Co?CNi?CN thin films electrodeposited under an external magnetic field were investigated. The films were electroplated on Al substrates using the same electrodeposition parameters (temperature and pH) for all experiments, with an external magnetic field of 107?Oe applied to the cathode surface. The films were compared with similar samples obtained in the absences of magnetic field. The magneto-induced modifications in the Co?CNi?CN morphology can be explained by the specific local convection of ions at the interface cathode-electrolyte, which promotes changes both in the electrical charge of the double layer and in the thickness of the diffusion layer. From the magnetic measurements, we found that the coercivity varied between H _c =(14÷27)?kA/m depending on the direction of the applied magnetic field and on the sodium nitrate content in the plating bath. It was observed that an induced anisotropy appeared in the Co?CNi?CN films due to the preferential orientation of the easy axis of magnetization in the magnetic field direction. In addition, the Co?CNi?CN alloy films showed good magnetic property, which is considered that not only the smaller grain size of the films, but also more uniform surface of the films than that deposited in absence of applied magnetic field.     

Effect of nitrile-functionalization and thermal cross-linking on the dielectric and mechanical properties of PEN/CNTs–CN composites

In this study, a novel series of composite films consisting of nitrile-functionalized carbon nanotubes (CNTs–CN) and poly(arylene ether nitriles) (PEN) were successfully fabricated by the tape-casting method. The –CN groups in PEN chains and the phthalonitrile groups on CNTs–CN formed the thermally stable triazine rings by thermal cross-linking reaction in the presence of diamino diphenyl sulfone, which was characterized by Fourier transform infrared spectroscopy. The result indicated that the chemical cross-linking reaction occurred accompanied by the emergence of a new absorption peak at 1,361 cm^?1. Besides, the effect of cross-linking on the morphology, thermal stability, mechanical and dielectric properties of the PEN/CNTs–CN was investigated. The SEM images showed that the phase interface between surface modified CNTs and PEN matrix was indistinct, and the surface modified CNTs presented a better dispersion behavior in PEN matrix. The mechanical properties of the processed films were improved substantially compared with the unprocessed films. Furthermore, the glass-transition temperature (T _g ) of composite films processed at 320 °C for 4 h (about 245 °C) was higher than that of composite films before thermal treatment (about 205 °C). The 5 % weight loss temperature of the composite films (processed at 320 °C for 4 h) increased by about 110 °C compared with the composite films (unprocessed). More importantly, by thermal cross-linking, the dielectric constant (ε) of composite films with 8 wt% CNTs–CN loading was increased from 31.8 to 33.9, and dielectric loss (tan δ) was decreased from 0.90 to 0.61 at 1 kHz.