A 3.7 MHz phased array probe using 0.91Pb(Zn(1/3)Nb(2/3))O(3)-0.09PbTiO(3 )

A novel 128-channel phased array probe for echocardiography with a center frequency of 3.7 MHz using 0.91Pb(Zn(1/3)Nb(2/3))O(3)-0.09PbTiO(3 ) (PZN-9%PT) single crystal has been fabricated to realize greater sensitivity and broader bandwidth properties. The echo amplitude of the PZN-9%PT single-crystal probe is about 5 dB higher than that of the conventional lead airconate titanate (PZT) ceramic probe, and the fractional bandwidth is about 25 percentage points broader. The quality of B mode images obtained by the PZN-9%PT probe satisfies the performance of the two types of conventional PZT ceramic probes that have center frequencies of 2.5 and 3.75 MHz. At the reference frequency of 3 MHz, the Doppler sensitivity of the PZN-9%PT probe is about 5 dB higher than that of the 3.75 MHz PZT probe; the blood flow of a pulmonary vein in a hard-to-image patient is much more clearly imaged than in the case of using the PZT probe. These superior images are attributable to the use of sufficiently large PZN-9%PT single crystals obtained by the self-flux method.     

Epitaxial growth of PbTiO(3) films on SrTiO(3) by RF magnetron sputtering

Epitaxial growth of PbTiO(3) films on (100)SrTiO(3 ) single crystal plates is investigated in detail for piezoelectric device applications. PbTiO(3) films were prepared by RF magnetron sputtering at relatively low temperature and subsequently annealed. The films had a perovskite structure under a wide annealing temperature range. Epitaxial growth of PbTiO(3) films on SrTiO (3) single crystal was achieved, although there was a limitation in the maximum film thickness (<0.3 mum). A thicker film (>0.6 mum) was successfully obtained by high-temperature sputtering. Lateral overgrowth of PbTiO(3) film was attempted using a high-temperature sputtering technique. A TEM micrograph confirms that PbTiO(3) film was epitaxially grown on SrTiO(3) single crystal and overgrown laterally to cover a Pt electrode film. To characterize film quality, ferroelectric properties are investigated. The electromechanical coupling constant of the PbTiO(3) film was evaluated by analyzing impedance characteristics, and was found to be as large as 0.8.     

PZT纳米晶薄膜的Sol—Gel法制备及铁电性质

采用Ｓｏｌ－Ｇｅｌ法，以Ｚｒ的硝酸盐替代醇盐，引入ＰｂＴｉＯ３过渡层的方法成功的制备了纳米晶铁电薄膜。并进行了差热、热重、结构、组分、铁电性能的测定、分析。     

Theoretical investigation of the SAW properties of ferroelectric film composite structures

The characteristics of surface acoustic waves (SAW) propagating on a three-layered structure consisting of a perovskite-type ferroelectric film, a buffer layer and a semiconductor substrate have been studied theoretically. Large coupling coefficients (K(2)) can be obtained when the interdigital transducer (IDT) is on top of the perovskite-type ferroelectric film, with (type 4) and without (type 3) the floating-plane electrode at the perovskite-type ferroelectric film-buffer layer interface. In the above cases, the peak values of K (2) Of the Pb(Zr,Ti)O(3) (PZT) films (3.2%-3.8%) are higher than those of the BaTiO(3) (BT) and PbTiO(3) (PT) films. In the IDT configuration of type 4, there exists a minor peak of the coupling coefficients for the PZT and BT films, but not for the PT films when the normalized thickness (hK) of the perovskite-type ferroelectric film is about 0.3. The minor peak values of the coupling coefficients (0.62%-0.93%) for different layered structures (PZT/STO/Si, PZT/MgO/Si, and PZT/MgO/GaAs) all decrease when we increase hK value from 0 to 0.25. The results could be useful in the integration of ferroelectric devices, semiconductor devices, and SAW devices on the same substrate.     

Elastic, piezoelectric, and dielectric properties of 0.955Pb(Zn(1/3)Nb(2/3))O(3)-0.45PbTiO(3 ) single crystal with designed multidomains

The elastic, piezoelectric, and dielectric properties of a 0.955Pb(Zn(1/3)Nb(2/3))O(3)-0.045PbTiO(3 ) (PZN-4.5%PT) multi-domain single crystal, poled along [001] of the original cubic direction, have been determined experimentally using combined resonance and ultrasonic methods. At room temperature, the PZN-4.5%PT single crystal has rhombohedral symmetry. After being poled along [001], four degenerate states still remain. Statistically, such a domain-engineered crystal may be treated as having an average tetragonal symmetry, and its material constants were determined based on 4 mm symmetry. It was confirmed that the electromechanical coupling coefficient k(33) for the domain-engineered samples is >90%, and the piezoelectric constant d(33) is >2000 pC/N. A soft shear mode with a velocity of 700 m/s was found in the [110] direction. From the measured experimental data, the orientational dependence of phase velocities and electromechanical coupling coefficients was calculated. The results showed that the transverse and longitudinal coupling coefficients, k(31) and k(33), reach their maximum along [110] and [001], respectively.     

铁掺杂0.2PZN-0.8PZT铁电陶瓷Raman散射研究

采用Raman散射方法研究了铁掺杂Pb（Zn1／3Nb2／3）0．2（Zr0．5Ti0．5）0．8O3（0．2PZN0．8PZT）铁电陶瓷中三方-四方共存现象．通过分析四方相E（3TO）和A1（3TO）模式与三方相R1模式之间的相对强度，以及四方相E（3LO）和A1（3LO）模式与三方相Rh模式之间的相对强度，确定了铁掺杂对0．2PZN-0．8PZT陶瓷中三方-四方共存结构的影响，并得到了XRD相分析的验证．因此，通过分解Raman散射中三方-四方振动模式，可以表征掺杂对PZT基陶瓷中三方-四方共存现象的变化趋势．     

Full tensorial elastic, piezoelectric, and dielectric properties characterization of [011]-poled PZN-9%PT single crystal

Transverse piezoelectric property of 0.91Pb(Zn(1/3)Nb(2/3))O(3)-0.09PbTiO(3) (PZN-9%PT) single crystal poled along [011] direction under different fields have been investigated, the poling field giving the best property was between 350 and 650 V/mm at room temperature. Full tensorial elastic, dielectric, and piezoelectric properties of PZN-9%PT single crystal poled along the [011] direction under 500 V/mm have been determined by resonance and ultrasonic methods. It was found that the electromechanical coupling coefficients k(32) and k(33) can reach 0.90 and 0.89 and the piezoelectric coefficients d(32) and d(15) are -1705 and 2012 pC/N, respectively. This complete set of physical properties can provide convenience for piezoelectric device fabrication and domain engineering studies.     

Self-separated PZT thick films with bulk-like piezoelectric and electromechanical properties

Self-separated Pb(Zr(0.52)Ti(0.48))O(3) (PZT) films were processed by a hydrothermal deposition and a rapid thermal separation method, followed by a sol-gel filling and sintering process. The films possess excellent piezoelectric and electromechanical properties close to those of bulk material. The maximum remnant polarization is over 30 μC/cm(2) and the electromechanical coupling factor (k(t)) reaches as high as 0.52. The unique microstructure characteristics of the PZT films, such as their highly dense structure, columnar grains, well-connected grain boundaries, and well-dispersed nanopores, could all contribute to the enhanced piezoelectric and electromechanical properties.     

锰掺杂对0.2PZN-0.8PZT陶瓷压电性能的影响

研究了锰掺杂对0.2PZN-0.8PZT(PZNT)陶瓷微观结构及压电性能的影响,结果表明:随锰离子的添加,陶瓷晶粒长大,烧结致密;晶格发生畸变,体系的相结构由四方相向三方相过渡,居里点降低。此外,锰掺杂使材料体系“变硬”,ε₃₃^T/ε₀和tanδ变小,Q_m值增加,同时瓷体较高的致密度又保证了K_p不致降低。     

Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices

Relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O(3-x)PbTiO(3) (PZN-PT) and Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)(PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (K(T)) approximately equal to 7000, piezoelectric coefficients (d(33)) approximately equal to 2800 pC/N, and electromechanical coupling factors (k(33)) > or = 0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with K(T) > or = 5000, d(32) approximately equal to -3800 pC/N and k(32) > or = 0.90. [011]- poled PZN 6%PT has d(32) approximately equal to -3000 pC/N and comparable k(32) and K(T) values. In comparison with melt-grown PMNPT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (TDP).     

Single crystal PZN/PT-polymer composites for ultrasound transducer applications

Single crystal relaxor ferroelectrics of PZN-8%PT were investigated for potential application in ultrasound transducers. The full set of electromechanical properties was determined using combined resonance and laser interferometry techniques. Ultra-high length extensional coupling (k(33)) of 0.94 was observed, a 25% increase over Navy Type VI PZT ceramics. The thickness extensional coupling (k(t)) of 0.48 was comparable to PZT compositions, and the compliance S(33)(E) was a factor of six greater. To maximize height extensional coupling (k'(33)), while minimizing length extensional coupling k(31) in array elements, it was necessary to align the elements along the 100 crystallographic direction in the x-y plane. Mode coupling plots and test samples for array elements determined that width-to-height ratios of less than 0.5 were desired, similar to the requirement for polycrystalline PZT ceramics. Modeling of 1-3 composites and experimental results demonstrated that thickness coupling greater than 0.80 could be achieved with a 40% to 70% volume fraction of PZN-PT. Although this is a substantial increase over PZT 1-3 composites, with a thickness coupling coefficient of 0.66, it represents a smaller fraction of the length extensional coupling k(33). This reduction may be a consequence of the increased compliance of PZN-PT, which results in significant clamping by the polymer matrix. Ultrasonic transducers fabricated using PZN-8%PT 1-3 composites achieved experimental bandwidths as high as 141%. The pulse-echo responses displayed good agreement with modeled results using the Redwood equivalent circuit.     

Linear electro-optic properties of orthorhombic PZN-8%PT single crystal

The optical transmittance spectra of relaxor ferroelectric 0.92Pb(Zn(1/3)Nb(2/3))O(3)-0.08PbTiO(3) (PZN-8%PT) single crystals poled along different directions have been systematically studied at room temperature. After being poled along the [011] direction, the transmittance of induced orthorhombic PZN-8%PT single crystal is more than 50% from 0.5 to 5.7 μm, which is much higher than that poled along the [001] and [111] directions. The refractive indices and linear electro-optic properties of the orthorhombic PZN-8%PT single crystal were characterized at a wavelength of 632.8 nm. Large electro-optic responses were observed, (γ33) = 220 pm/V, (γ13) = 62 pm/V, and (γ23) = 23 pm/V. Thus, orthorhombic PZN-8%PT single crystal is a promising material for high-performance electro-optic devices.     

铁电薄膜的制备及应用技术研究

研究出具有特色的制备铁电薄膜的 sol-gel技术;制备出高质量、高可靠的 PLT、PZT、PYZT、BST”l、PbTiO3、BaTiO3、Bi4Ti3O12多晶铁电薄膜,PLT、PZT和伽里O3异质外延生长铁电薄膜;研制出铁电薄膜热释电单元红外传感器,8元、9元、1O元线列和8X8元阵列;研制出热释电火情探测器和热释电非接触式温度测试仪。     

Optical waveguiding in epitaxial PbTiO(3) thin films

Epitaxial lead titanate (PbTiO(3)) thin films on SrTiO(3) (100) substrate were grown in situ by radio-frequency sputtering for optical waveguiding applications. The crystalline quality of the PbTiO(3) films deposited at 550 degrees C has been investigated through x-ray diffraction analysis. It indicates that thin films are completely c-axis oriented (rocking curve FWHM of 0.2 degrees for the 001 reflection). The transmission spectrum method has been used to measure the dispersion of the refractive index. At 632.8 nm, the PbTiO(3) film with an (001) orientation exhibits a refractive index of 2.61, which represents 98% of the bulk material. The prism-coupling technique has been also employed to determine the optical attenuation in the planar waveguide. In this study, we report a low propagation loss of 2.2 ? 0.2 dB/cm obtained in a PbTiO(3) optical waveguide.     

Analysis of vibration waveforms of electromechanical response to determine piezoelectric and electrostrictive coefficients

We developed a possible method to determine both coefficients of piezoelectricity (d) and electrostriction (M) at the same time by a waveform analysis of current and vibration velocity in the resonance state. The waveforms of the current and vibration velocity were theoretically described using the equations of motion and piezoelectric constitutive equations, considering the dissipation effect. The dissipation factor of the d coefficient and M coefficient is dielectric loss tangent tan δ. The waveforms measured in all of the ceramics, such as Pb(Zr,Ti)O(3) (PZT), Pb(Mg,Nb)O(3) (PMN), and 0.8Pb(Mg(1/3)Nb2/3)O(3)-0.2PbTiO(3) (PMN-PT), were well fitted with the calculated waveform. This fitting produced both the d and M coefficients, which agreed with those determined via the conventional methods. Moreover, the respective contributions of both piezoelectricity and electrostriction to the d value determined in the resonance-antiresonance method were clarified.     

The effect of LaNiO3 buffer layer thickness on the electric properties of Pb(Zr0.53Ti0.47)O3 thin films deposited on titanium foils

Sol-gel derived Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin films were prepared on LaNiO₃ (LNO) buffered titanium foils. The effect of LNO buffer layer thickness on the electric properties of PZT thin films was investigated. The room temperature dielectric constant of PZT thin films increased with increasing LNO thickness. The remnant polarization of PZT thin films on 150 and 250 nm LNO was about 20 uC/cm². Curie temperatures of PZT thin films were 310, 330 and 340 °C for LNO of 250, 150 and 50 nm respectively. The current-voltage characteristics of PZT thin films were examined for different LNO buffer layer thicknesses, and the space charge limited conduction model was followed in PZT thin films on 50 nm LNO.     

Single crystal PMN-0.33PT/epoxy 1-3 composites for ultrasonic transducer applications

Lead magnesium niobate-lead titanate 0.67Pb (Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-0.33PbTiO/sub 3/ (PMN-0.33PT, abbreviated as PMN-PT) single crystals were used to fabricate PMN-PT/epoxy 1-3 composites with different volume fractions of PMN-PT ranging from 0.4 to 0.8. The electromechanical properties of the 1-3 composites were determined by the resonance technique. Theoretical modeling of the 1-3 composites matched quite well with the measured material properties. It was demonstrated that the thickness electromechanical coupling coefficients of the composites could reach as high as 0.8. A 2.4 MHz plane ultrasonic transducer was fabricated using a PMN-PT/epoxy 1-3 composite with 0.37 volume fraction of PMN-PT. It shows a -6 dB bandwidth of /spl sim/61% and an insertion loss of -14 dB.     

The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films

A series of PbZr_0.58Ti_0.42O₃ (PZT) thin films with various Bi_3.25La_0.75Ti₃O₁₂ (BLT) buffer layer thicknesses were deposited on Pt/TiO₂/SiO₂/p-Si(100) substrates by RF magnetron sputtering. The X-ray diffraction measurements of PZT film and PZT/BLT multilayered films illustrate that the pure PZT film shows (111) preferential orientation, and the PZT/BLT films show (110) preferential orientation with increasing thickness of the BLT layer. There are no obvious diffraction peaks for the BLT buffer layer in the multilayered films, for interaction effect between the bottom BLT and top PZT films during annealing at the same time. From the surface images of field-emission scanning electron microscope, there are the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples. The growth direction and grain size have significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics of PZT and PZT/BLT films suggest that 30-nm-thick BLT is just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results with that of PZT/Pt/TiO₂/SiO₂/p-Si(100) basic structured film suggests that the buffer layer with an appropriate thickness can improve the ferroelectric properties of multilayered films greatly.     

Simple model for piezoelectric ceramic/polymer 1-3 composites used in ultrasonic transducer applications

A theoretical model is presented for combining parameters of 1-3 ultrasonic composite materials in order to predict ultrasonic characteristics such as velocity, acoustic impedance, electromechanical coupling factor, and piezoelectric coefficients. Hence, the model allows the estimation of resonance frequencies of 1-3 composite transducers. This model has been extended to cover more material parameters, and they are compared to experimental results up to PZT volume fraction ν of 0.8. The model covers calculation of piezoelectric charge constants d₃₃ and d₃₁. Values are found to be in good agreement with experimental results obtained for PZT 7A/Araldite D 1-3 composites. The acoustic velocity, acoustic impedance, and electromechanical coupling factor are predicted and found to be close to the values determined experimentally     

溶胶凝胶合成PbTiO3／NiTi工艺研究

研究了溶胶凝胶工艺在NiTi基体表面复合PbTiO