<Emphasis Type="BoldItalic">LAMA/CA</Emphasis>: A Load-Adaptive MAC Protocol for Short Packets

An efficient Media Access Control (MAC) protocol for wireless Internet access is developed in this study. The proposed access protocol exploits the fact that very often the Internet access messages, such as HTTP download requests, are based on short packets. In addition, whenever the user is able to access to multiple overlapping base stations (e.g., in WiMAX access networks, or in 3GPP cellular networks), the proposed protocol enables the user to select the least loaded base station. Consequently, the user gets a better quality of service, while load balancing is achieved by preferring links that are less loaded over congested links. The key idea is to adjust the access probability to the load on the local link, and to use a different access protocol for short messages. Delay insensitive and long messages are transmitted using a Request To Send (RTS) and Clear To Send (CTS) mechanism, in a similar way to IEEE 802.11, over hops that are able to support this protocol type, while short and delay-sensitive messages are transmitted using another method, that offers a reduced call delivery delay, as well as better channel utilization. Whenever the message length drops below a certain threshold (evaluated in this study), the overhead of transmitting an RTS and CTS messages becomes too large. The analysis in this study shows that this threshold is load-dependent. Whenever the message length drops below this load-dependent threshold, this study proposes to use a protocol which is more efficient for short messages transmissions, such as HTTP download requests, Short Message Service (SMS) messages, and signaling messages. The proposed MAC protocol is especially suitable for 3G and beyond cellular networks. Whenever there are number of channels that can be possibly used to deliver a message, it enables to select the least loaded channel among several channels.     

Low-Power FPGA-Implementation of <Emphasis Type="Italic">atan</Emphasis>(<Emphasis Type="Italic">Y</Emphasis>/<Emphasis Type="Italic">X</Emphasis>) Using Look-Up Table Methods for Communication Applications

This paper presents an architecture for the computation of the atan(Y/X) operation suitable for broadband communication applications where a throughput of 20 MHz is required. The architecture takes advantage of embedded hard-cores of the FPGA device to achieve lower power consumption with respect to an atan(Y/X) operator based on CORDIC algorithm or conventional LUT-based methods. The proposed architecture can compute the atan(Y/X) with a latency of two clock cycles and its power consumption is 49% lower than a CORDIC or 46% lower than multipartite approach.

Electrodeposition of <Emphasis Type="Italic">p</Emphasis>-Type Sb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> Thermoelectric Films

Thermoelectric Sb _x Te _y films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different concentrations of TeO₂. Stoichiometric Sb _x Te _y films were obtained by applying a voltage of −0.15 V versus saturated calomel electrode (SCE) using a solution consisting of 2.4 mM TeO₂, 0.8 mM Sb₂O₃, 33 mM tartaric acid, and 1 M HNO₃. The nearly stoichiometric Sb₂Te₃ films had a rhombohedral structure, R[`3]m R\bar{3}m , with a preferred orientation along the (015) direction. The films had hole concentration of 5.8 × 10¹⁸/cm³ and exhibited mobility of 54.8 cm²/Vs. A more negative potential resulted in higher Sb content in the deposited Sb _x Te _y films. Furthermore, it was observed that the hole concentration and mobility decreased with increasingly negative deposition potential, and eventually showed insulating properties, possibly due to increased defect formation. The absolute value of the Seebeck coefficient of the as-deposited Sb₂Te₃ thin film at room temperature was 118 μV/K.     

Differential capacitance of a <Emphasis Type="Italic">p</Emphasis><Superscript>+</Superscript>-<Emphasis Type="Italic">p</Emphasis> junction

The differential capacitance of a p ⁺-p junction formed by charge redistribution near the junction, has been investigated taking into account the electric field in the quasi-neutral p region. The dependence of the capacitance and current of the p ⁺-p junction on its voltage is obtained. It is shown that a change in the sign of the p ⁺-p-junction capacitance with an increase in the injection level is caused by a decrease in the bipolar drift mobility in the p-type region. It is also demonstrated that a change in the sign of the p ⁺-p-junction capacitance with an increase in the reverse voltage determines the charge reduction near the junction, as the increase in the negative charge of acceptor ions predominates over the increase in the positive charge of holes.     

An ultra-low-power CMOS symmetrical OTA for low-frequency <Emphasis Type="Italic">G</Emphasis><Subscript><Emphasis Type="Italic">m</Emphasis></Subscript>-<Emphasis Type="Italic">C</Emphasis> applications

In this paper an ultra-low-power CMOS symmetrical operational transconductance amplifier (OTA) for low-frequency G _m -C applications in weak inversion is presented. Its common mode input range and its linear input range can be made large using DC shifting and bulk-driven differential pair configuration (without using complex approaches). The symmetrical OTA was successfully verified in a standard CMOS 0.35-μm process. The measurements show an open loop gain of 61 dB and a unit gain frequency of 195 Hz with only 800 mV of power supply voltage and just 40 nW of power consumption. The transconductance is 66 nS, which is suitable for low-frequency G _m -C applications.     

High-efficiency LEDs based on <Emphasis Type="Italic">n</Emphasis>-GaSb/<Emphasis Type="Italic">p</Emphasis>-GaSb/<Emphasis Type="Italic">n</Emphasis>-GaInAsSb/<Emphasis Type="Italic">P</Emphasis>-AlGaAsSb type-II thyristor heterostructures

A new type of light-emitting diodes (LEDs), a high-efficiency device based on an n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb thyristor heterostructure, with the maximum emission intensity at wavelength λ = 1.95 μm, has been suggested and its electrical and luminescent characteristics have been studied. It is shown that the effective radiative recombination in the thyristor structure in the n-type GaInAsSb active region is provided by double-sided injection of holes from the neighboring p-type regions. The maximum internal quantum efficiency of 77% was achieved in the structure under study in the pulsed mode. The average optical power was as high as 2.5 mW, and the peak power in the pulsed mode was 71 mW, which exceeded by a factor of 2.9 the power obtained with a standard n-GaSb/n-GaInAsSb/P-AlGaAsSb LED operating in the same spectral range. The approach suggested will make it possible to improve LED parameters in the entire mid-IR spectral range (2–5 μm).     

3<Emphasis Type="Italic">C</Emphasis>-SiC <Emphasis Type="Italic">p-n</Emphasis> structures grown by sublimation on 6<Emphasis Type="Italic">H</Emphasis>-SiC substrates

Sublimation epitaxy in a vacuum has been employed to grow n-and p-type 3C-SiC layers on 6H-SiC substrates. Diodes have been fabricated on the basis of the p-n structure obtained, and their parameters have been studied by measuring their current-voltage and capacitance-voltage characteristics and by applying the DLTS and electroluminescence methods. It is shown that the characteristics of the diodes studied are close to those of diodes based on bulk 3C-SiC. A conclusion is made that sublimation epitaxy can be used to fabricate 3C-SiC p-n structures on substrates of other silicon carbide polytypes.     

Recombination of charge carriers in the GaAs-based <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">i</Emphasis>-<Emphasis Type="Italic">n</Emphasis> diode

It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.     

The <Emphasis Type="Italic">Horus</Emphasis> location determination system

We present the design and implementation of the Horus WLAN location determination system. The design of the Horus system aims at satisfying two goals: high accuracy and low computational requirements. The Horus system identifies different causes for the wireless channel variations and addresses them to achieve its high accuracy. It uses location-clustering techniques to reduce the computational requirements of the algorithm. The lightweight Horus algorithm helps in supporting a larger number of users by running the algorithm at the clients. We discuss the different components of the Horus system and evaluate its performance on two testbeds. Our results show that the Horus system achieves its goal. It has an error of less than 0.6 meter on the average and its computational requirements are more than an order of magnitude better than other WLAN location determination systems. Moreover, the techniques developed in the context of the Horus system are general and can be applied to other WLAN location determination systems to enhance their accuracy. We also report lessons learned from experimenting with the Horus system and provide directions for future work. Moustafa Youssef is a research associate in the Department of Computer Science at the University of Maryland at College Park. He received his B.Sc. and M.Sc. in Computer Science from Alexandria University, Egypt in 1997 and 1999 respectively and the Ph.D. degree in computer science from University of Maryland in 2004. His research interests include location determination technologies, pervasive computing, energy-aware computing, sensor networks, and protocol modeling. Dr. Moustafa is a life fellow for the Egyptian Society for Talented, an elected member of the honor society Phi Kappa Phi, among others. He is a member of various professional societies such as IEEE, IEEE Computer Society, IEEE Communication Society and ACM Sigmobile. Dr. Moustafa is the recipient of the 2003 University of Maryland Invention of the Year award for his Horus work. Ashok K. Agrawala is a Professor of Computer Science at the University of Maryland. In 2001, he started the Maryland Information and Network Dynamics (MIND) Lab for which carries out research and development activities in partnership with the industry. He received his B.E. degree in 1963 and an M.E. degree in 1965 from the I.I.Sc., Bangalore; and a Master of Arts and his Ph.D. in Applied Mathematics from Harvard University in 1970. Prof. Agrawala is the author of seven books, six patents (awarded or pending), and over 240 papers and is a recognized authority in the research and use of time management in real-time processing and clock synchronization applications. He has developed a few location determination techniques and several other innovative technologies for systems and networks, which are in different stages of development. Prof. Agrawala is a fellow of the IEEE and senior member of the ACM.     

A DLTS study of 4<Emphasis Type="Italic">H</Emphasis>-SiC-based <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis> junctions fabricated by boron implantation

Deep-level transient spectroscopy (DLTS) has been used to study p-n junctions fabricated by implantation of boron into epitaxial 4H-SiC films with n-type conductivity and the donor concentration (8–9) × 10¹⁴ cm⁻³. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers in the n-type region near the metallurgical boundary of the p-n junction.     

Dual-Frequency Behavior of Stacked High <Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconducting Microstrip Patches

The dual-frequency behavior of stacked high T _c superconducting rectangular microstrip patches fabricated on a two-layered substrate is investigated using a full-wave spectral analysis in conjunction with the complex resistive boundary condition. Using a matrix representation of each layer, the dyadic Green’s functions of the problem are efficiently determined in the vector Fourier transform domain. The stationary phase method is used for computing the radiation electric field of the antenna. The proposed approach is validated by comparison of the computed results with previously published data. Variations of the lower and upper resonant frequencies, bandwidth and quality factor with the operating temperature are given. Results showing the effects of the bottom patch thickness as well as the top patch thickness on the dual-frequency behavior of the stacked configuration are also presented and discussed. Finally, for a better comprehension of the dual-frequency operation, a comparison between the characteristics of the lower and upper resonances is given.     

Availability Analysis and Enhanced Availability Design in <Emphasis Type="Italic">p</Emphasis>-Cycle-Based Networks

p-Cycle protection is a fairly new survivability scheme that has the interesting properties of offering restoration speeds essentially the same as those offered by ring protection while requiring almost as little redundant capacity as adaptive mesh restoration [D. Stamatelakis, W.D. Grover, IEEE Transactions on Communications, vol. 48, no. 8, (August 2000), pp. 1262–1265]. This paper presents the first analytical consideration of the availability of paths in a network protected by p-cycles. Results confirm the importance that cycle sizes play in terms of availability and suggests principles or strategies for achieving high availability of paths in a network protected by p-cycles. Based on these insights, two new formulations for joint service path provisioning and capacity planning are proposed. The first one offers a way to improve the availability of selected service paths by using a different routing strategy for them than for regular service paths. The second formulation enables a new class of service paths that are offered two protection options instead of just one. That class of service paths is expected to see its availability improved in a quantum step way relative to the availability of paths having only one protection option.     

Power Factor Anisotropy of <Emphasis Type="Italic">p</Emphasis>-Type and <Emphasis Type="Italic">n</Emphasis>-Type Conductive Thermoelectric Bi-Sb-Te Thin Films

The best films for thermoelectric applications near room temperature are based on the compounds Bi₂Te₃, Sb₂Te₃, and Bi₂Se₃, which as single crystals have distinct anisotropy in their electrical conductivity σ regarding the trigonal c-axis, whereas the Seebeck coefficient S is nearly isotropic. For p- and n-type alloys, P _⊥c > P _||c, and the power factors P _⊥c of single crystals are always higher compared with polycrystalline films, where the power factor is defined as P = S ² σ, ⊥c and ||c are the direction perpendicular and parallel to the c-axis, respectively. For the first time in sputter-deposited p-type (Bi_0.15Sb_0.85)₂Te₃ and n-type Bi₂(Te_0.9Se_0.1)₃ thin films, the anisotropy of the electrical conductivity has been measured directly as it depends on the angle φ between the electrical current and the preferential orientation of the polycrystals (texture) using a standard four-probe method. The graphs of σ(φ) show the expected behavior, which can be described by a weighted mixture of σ _⊥c and σ _||c contributions. Because (σ _⊥c/σ _||c) _p  < (σ _⊥c/σ _||c) _n , the n-type films have stronger anisotropy than the p-type films. For this reason, the angular weighted contributions of P _||c lead to a larger drop in the power factor of polycrystalline n-type films compared with p-type films.     

Light-Harvesting in <Emphasis Type="Italic">n</Emphasis>-ZnO/<Emphasis Type="Italic">p</Emphasis>-Silicon Heterojunctions

Zinc oxide (ZnO) films were deposited onto Si to form n-ZnO/p-Si heterojunctions. Under the illumination of by both ultraviolet (UV) light and sunlight, obvious photovoltaic behavior was observed. It was found that the conversion efficiency of the heterojunctions increased significantly with increasing thickness of the ZnO film, and the mechanism for light-harvesting in the heterojunctions is discussed. The results suggest that ZnO films may be helpful to increasing the harvesting of UV photons, thus decreasing the thermalization loss of UV energy in Si-based solar cells.     

Practical Surface Treatments and Surface Chemistry of <Emphasis Type="Italic">n</Emphasis>-Type and <Emphasis Type="Italic">p</Emphasis>-Type GaN

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study the electronic structure of n-GaN and p-GaN(0001) surfaces after three ex situ surface treatments: aq-HCl, annealing in NH₃, and annealing in HCl vapor. The combination of in situ vacuum annealing and re-exposure of samples to air revealed that the adsorption of ambient contaminants can reduce the surface state density and subsequent band bending on both n-GaN and p-GaN surfaces. Insights derived from first-principles calculations of the adsorption of relevant species on the Ga-terminated GaN(0001) surface are used to explain these experimental observations qualitatively.     

HgCdTe <Emphasis Type="Italic">p</Emphasis>-on-<Emphasis Type="Italic">n</Emphasis> Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth

Extrinsic p-type doping during molecular-beam epitaxy (MBE) growth represents an essential generic toolbox for advanced heterostructures based on the HgCdTe material system: PiN diodes, mesa avalanche photodiodes (APD) or third-generation multispectral focal-plane arrays. Today, arsenic appears to be the best candidate to fulfill this role and our group is actively working on its incorporation during MBE growth, using an original radio frequency (RF) plasma source for arsenic. Such a cell is supposed to deliver a monatomic As flux, and as expected we observed high As electrical activation rates after annealing short-wave (SW), mid-wave (MW), and long-wave (LW) layers. At last, a couple of technological runs have been carried out in the MW range in order to validate the approach on practical devices. p-on-n focal-plane arrays (FPA) have been fabricated using a mesa delineated technology on an As-on-In doped metallurgical heterojunction layer grown on a lattice-matched CdZnTe layer (320 × 256, 30 μm pitch, 5 μm cutoff at 77 K). Observed diodes exhibit very interesting electro-optical characteristics: large shunt impedance, high quantum efficiency, and no noticeable excess noise. The resulting focal-plane arrays were observed to be very uniform, leading to high operabilities. Noise equivalent temperature difference (NETD) distributions are very similar to those observed with the As ion-implanted p-on-n technology, fabricated in our laboratory as well. In our opinion, those excellent results demonstrate the feasibility of our MBE in situ arsenic doping process. Good electrical activation rates and high-quality layers can be obtained. We believe that such an approach allows precise control of the p-doping profile in the HgCdTe layer, which is necessary for advanced structure designs.     

Bistable low temperature (77 K) impurity breakdown in <Emphasis Type="Italic">p</Emphasis>-type 4<Emphasis Type="Italic">H</Emphasis>-SiC

Low-temperature (77 K) forward current-voltage characteristics of 4H-SiC p ⁺-p-n ⁺-n (substrate) mesa epitaxial diode structures have been measured. The characteristics are S-shaped, which is accounted for by the bistable nature of the impact ionization of frozen-out acceptor atoms of aluminum.     

A <Emphasis Type="Italic">G</Emphasis><Subscript><Emphasis Type="Italic">m</Emphasis></Subscript><Emphasis Type="Italic">-C</Emphasis> continuous-time analog filter for IEEE 802.11 a/b/g/n wireless LANs

A CMOS transconductor for multi-mode wireless channel selection filter is presented. The linear transconductor is designed based on the flipped-voltage follower (FVF) circuit and an active resistor to achieve the transconductance tuning. The transconductance tuning can be obtained by changing the bias current of the active resistor. A third-order Butterworth low-pass filter implemented with the transconductors was designed by TSMC 0.18-μm CMOS process. The results show that the filter can operate with the cutoff frequency of 10–20 MHz. The tuning range would be suitable for the specifications of IEEE 802.11 a/b/g/n Wireless LANs under the consideration of saving chip areas. In the design, the maximum power consumption is 13 mW with the cutoff frequency of 20 MHz under a 1.8 V supply voltage.