Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique

Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti₃SiC₂ at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti₃SiC₂ samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti₃SiC₂ could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti₃SiC₂ also could be controlled using three types of powders, i.e., fine, coarse, or duplex-grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high-purity Ti₃SiC₂ could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.     

Processing and Mechanical Properties of Ti3SiC2: II, Effect of Grain Size and Deformation Temperature

In this article, the second part of a two-part study, we report on the mechanical behavior of Ti₃SiC₂. In particular, we have evaluated the mechanical response of fine-grained (3–5 μm) Ti₃SiC₂ in simple compression and flexure tests, and we have compared the results with those of coarse-grained (100–200 μm) Ti₃SiC₂. These tests have been conducted in the 25°–1300°C temperature range. At ambient temperature, the fine- and coarse-grained microstructures exhibit excellent damage-tolerant properties. In both cases, failure is brittle up to ∼1200°C. At 1300°C, both microstructures exhibit plastic deformation (>20%) in flexure and compression. The fine-grained material exhibits higher strength compared with the coarse-grained material at all temperatures. Although the coarse-grained material is not susceptible to thermal shock (up to 1400°C), the fine-grained material thermally shocks gradually between 750° and 1000°C. The results presented herein provide evidence for two important aspects of the mechanical behavior of Ti₃SiC₂: (i) inelastic deformation entails basal slip and damage formation in the form of voids, grain-boundary cracks, kinking, and delamination of individual grains, and (ii) the initiation of damage does not result in catastrophic failure, because Ti₃SiC₂ can confine the spatial extent of the damage.     

Cyclic Fatigue-Crack Growth and Fracture Properties in Ti3SiC2 Ceramics at Elevated Temperatures

The cyclic fatigue and fracture toughness behavior of reactive hot-pressed Ti₃SiC₂ ceramics was examined at temperatures from ambient to 1200°C with the objective of characterizing the high-temperature mechanisms controlling crack growth. Comparisons were made of two monolithic Ti₃SiC₂ materials with fine- (3–10 μm) and coarse-grained (70–300 μm) microstructures. Results indicate that fracture toughness values, derived from rising resistance-curve behavior, were significantly higher in the coarser-grained microstructure at both low and high temperatures; comparative behavior was seen under cyclic fatigue loading. In each microstructure, Δ K _th fatigue thresholds were found to be essentially unchanged between 25° and 1100°C; however, there was a sharp decrease in Δ K _th at 1200°C (above the plastic-to-brittle transition temperature), where significant high-temperature deformation and damage are first apparent. The substantially higher cyclic-crack growth resistance of the coarse-grained Ti₃SiC₂ microstructure was associated with extensive crack bridging behind the crack tip and a consequent tortuous crack path. The crack-tip shielding was found to result from both the bridging of entire grains and from deformation kinking and bridging of microlamellae within grains, the latter forming by delamination along the basal planes.     

Effect of Vacuum Annealing on the Phase Stability of Ti3SiC2

The effect of vacuum annealing on the thermal stability and phase transition of Ti₃SiC₂ has been investigated by X-ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction, and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti₃SiC₂ undergoes a surface dissociation to form nonstoichiometric TiC and/or Ti₅Si₃C _x that commences at ∼1200°C and becomes very pronounced at ≥1500°C. Composition depth profiling at the near surface of vacuum-annealed Ti₃SiC₂ by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti₅Si₃C _x with depth.     

Toughening of SiC with Ti3SiC2 Particles

Composites in the SiC–TiC–Ti₃SiC₂ system were synthesized using reactive hot pressing at 1600°C. The results indicate that addition of Ti₃SiC₂ to SiC leads to improved fracture toughness. In addition, high microhardness can be retained if TiC is added to the material. The best combination of properties obtained in this study is K _{I c} =8.3 MPa·m^1/2 and H _v=17.6 GPa. The composition can be tailored in situ using the decomposition of Ti₃SiC₂. Ti₃SiC₂ decomposed rapidly at temperatures above 1800°C, but the decomposition could be conducted in a controlled manner at 1750°C. This can be used for synthesis of fully dense composites with improved properties by first consolidating to full density a softer Ti₃SiC₂-rich initial composition, and then using controlled decomposition of Ti₃SiC₂ to achieve the desired combination of microhardness and fracture toughness.     

Intermediate Phases in Ti3SiC2 Synthesis from Ti/SiC/C Mixtures Studied by Time-Resolved Neutron Diffraction

The reactive sintering of 3Ti/SiC/C to form the layered ternary carbide Ti₃SiC₂ was studied in situ by time-resolved neutron powder diffraction. A number of intermediate processes occur during the synthesis beginning with the α-β transition in Ti. Concurrent with the α-β transition, two intermediate phases, TiC _x and Ti₅Si₃C _x ( x ≤ 1), form. These phases account for almost the entire sample in the range 1500–1600°C beyond which they react with each other and a small amount of free C to form the product phase Ti₃SiC₂.     

Reinforcement of Hydroxyapatite Bioceramic by Addition of Ti3SiC2

Ti₃SiC₂/HAp composites with different Ti₃SiC₂ volume fractions were fabricated by spark plasma sintering (SPS) at 1200°C. The effects of Ti₃SiC₂ addition on the mechanical properties and microstructures of the composites were investigated. The bending strength and fracture toughness of the composites increased with increasing of Ti₃SiC₂ content, whereas the Vickers hardness decreased. The bending strength and fracture toughness reached 252±10 MPa and 3.9±0.1 MPa·m^1/2, respectively, with the addition of 50 vol% Ti₃SiC₂. The increases in the mechanical properties were attributed to the matrix strengthening and interactions between cracks and the Ti₃SiC₂ platelets.     

Synthesis of Ti3SiC2 Powders: Reaction Mechanism

Titanium silicon carbide (Ti₃SiC₂) and Ti₃SiC₂-based composite powders were synthesized by isothermal treatment in an inert atmosphere as a function of initial compositions (mixtures). A high content of TiC was obtained in the final product when the initial mixtures contained free carbon. The use of TiC as a reagent was unsuccessful in obtaining Ti₃SiC₂. High Ti₃SiC₂ conversion was found for the initial mixtures containing SiC as the main source for silicon and carbon. An initial mixture with a large excess of silicon, 3Ti/1.5SiC/0.5C, was needed to obtain high-purity Ti₃SiC₂. A reaction mechanism, where Ti₃SiC₂ nucleates on Ti₅Si₃C crystals and grows by long-range diffusion of Ti and C, is proposed. The reaction mechanism was proposed to be based on silicon loss during the formation of Ti₃SiC₂.     

Inter-Conversion of Mn+1AXn Phases in the Ti–Al–C System

It is demonstrated that the M _{n +1}AX _n phase Ti₃AlC₂ may be readily synthesized by sintering a stoichiometric mixture of the lower order MAX phase Ti₂AlC mixed with a stoichiometric amount of TiC in the temperature range 1350°–1450 °C. High-quality Ti₃AlC₂ was readily produced using sintering times in the range 2–5 h. In general, <2% of unwanted or remnant phases were found to be present and in some samples none could be detected at all.     

Interdiffusion Between Ti3SiC2–Ti3GeC2 and Ti2AlC–Nb2AlC Diffusion Couples

In this work, we report on the interdiffusion of Ge and Si in Ti₃SiC₂ and Ti₃GeC₂, as well as that of Nb and Ti in Ti₂AlC and Nb₂AlC. The interdiffusion coefficient, D _int, measured by analyzing the diffusion profiles of Si and Ge obtained when Ti₃SiC₂–Ti₃GeC₂ diffusion couples are annealed in the 1473–1773 K temperature range at the Matano interface composition (≈Ti₃Ge_0.5Si_0.5C₂), was found to be given by
D _int increased with increasing Ge composition. At the highest temperatures, diffusion was halted after a short time, apparently by the formation of a diffusion barrier of TiC. Similarly, the interdiffusion of Ti and Nb in Ti₂AlC–Nb₂AlC couples was measured in the 1723–1873 K temperature range. The D _int for the Matano interface composition, viz. ≈(Ti_0.5,Nb_0.5)₂AlC, was found to be given by
At 1773 K, the diffusivity of the transition metal atoms was ≈7 times smaller than those of the Si and Ge atoms, suggesting that the former are better bound in the structure than the latter.     

Thermal Expansion of Polycrystalline Ti3SiC2 in the 25°–1400°C Temperature Range

We measured the volume thermal expansion of Ti₃SiC₂ from 25° to 1400°C using high-temperature X-ray diffraction using a resistive heated cell. A piece of molybdenum foil with a 250 μm hole contained the sample material (Ti₃SiC₂+Pt). Thermal expansion of the polycrystalline sample was measured under a constant argon flow to prevent oxidation of Ti₃SiC₂ and the molybdenum heater. From the lattice parameters of platinum (internal standard), we calculated the temperature by using thermal expansion data published in the literature. The molar volume change of Ti₃SiC₂ as a function of temperature in °C is given by: V _M (cm³/mol)=43.20 (2)+9.0 (5) × 10⁻⁴ T +1.8(4) × 10⁻⁷ T ². The temperature variation of the volumetric thermal expansion coefficient is given by: α_v (°C⁻¹)=2.095 (1) × 10⁻⁵+7.700 (1) × 10⁻⁹ T . Furthermore, the results indicate that the thermal expansion anisotropy of Ti₃SiC₂ is quite mild in accordance with previous work.     

Phase Relations in the Pyrochlore-Rich Part of the Bi2O3−TiO2−Nd2O3 System

In this study we used solid-state synthesis to determine the phase relations in the pyrochlore-rich part of the Bi₂O₃−TiO₂−Nd₂O₃ system at 1100°C. The samples were analyzed using X-ray powder diffraction and scanning electron microscopy with energy- and wavelength-dispersive spectroscopy. A single-phase pyrochlore ceramic was obtained with the addition of 4.5 mol% of Nd₂O₃. We determined the solubility limits for the three solid solutions: (i) the pyrochlore solid solution Bi_{(1.6–1.08 x )}Nd _x Ti₂O_{(6.4+0.3 x )}, where 0.25< x <0.96; (ii) the solid solution Bi_{4− x} Nd _x Ti₃O₁₂, where 0< x <2.6; and (iii) the Nd_{2− x} Bi _x Ti₂O₇ solid solution, where 0< x <0.35. The determined phase relations in the pyrochlore-rich part are presented in a partial phase diagram of the Bi₂O₃−TiO₂−Nd₂O₃ system in air at 1100°C.     

Synthesis and Reaction Mechanism of Ti3SiC2 by Mechanical Alloying of Elemental Ti, Si, and C Powders

Formation of titanium silicon carbide (Ti₃SiC₂) by mechanical alloying (MA) of Ti, Si, and C powders at room temperature was experimentally investigated. A large amount of granules less than 5 mm in size, consisting of Ti₃SiC₂, smaller TiC particles, and other silicides, have been obtained after ball milling for only 1.5 h. The effect of excess Si in the starting powders on the formation of Ti₃SiC₂ was studied. The formation mechanism of Ti₃SiC₂ was analyzed. It is believed that a mechanically induced self-propagating reaction is ignited during the MA process. A possible reaction mechanism was proposed to explain the formation of the final products.     

Spark Plasma Sintering of Nano-Sized TiN Prepared from TiO2 by Controlled Hydrolysis of TiCl4 and Ti(O-i-C3H7)4 Solution

Nano-sized TiO₂ powders were prepared by controlled hydrolysis of TiCl₄ and Ti(O-i-C₃H₇)₄ solutions and nitrided in flowing NH₃ gas at 700°–1000°C to form TiN. Nano-sized TiN was densified by spark plasma sintering at 1300°–1600°C to produce TiN ceramics with a relative density of 98% at 1600°C. The microstructure of the etched ceramic surface was observed by SEM, which revealed the formation of uniformly sized 1–2 μm grains in the TiCl₄-derived product and 10–20 μm in the Ti(O-i-C₃H₇)₄-derived TiN. The electric resisitivity and Vickers micro-hardness of the TiN ceramics was also measured.     

In Situ Processing and High-Temperature Properties of Ti3Si(Al)C2/SiC Composites

Ti₃SiC₂ has many salient properties including low density, high strength and modulus, damage tolerance at room temperature, good machinablity, and being resistant to thermal shock and oxidation below 1100°C. However, the low hardness and poor oxidation resistance above 1100°C limit the application of this material. The poor oxidation resistance at temperatures above 1100°C was because of the absence of protective layer in the scale and the presence of TiC impurity phase. TiC impurity could be eliminated by adding a small amount of Al to form Ti₃Si(Al)C₂ solid solutions. Although the high-temperature oxidation resistance was significantly improved for the Ti₃Si(Al)C₂ solid solutions, the strength at high temperatures was lost. One important way to enhance the high-temperature strength is to incorporate hard ceramic particles like SiC. In this article, we describe the in situ synthesis and simultaneous densification of Ti₃Si(Al)C₂/SiC composites using Ti, Si, Al, and graphite powders as the initial materials. The effect of SiC content on high-temperature mechanical properties and oxidation resistance were investigated. The mechanisms for the improved high-temperature properties are discussed.     

Mechanical-Alloying-Assisted Synthesis of Ti3SiC2 Powder

Mechanical alloying (MA) has been used to synthesize Ti₃SiC₂ powder from the elemental Ti, Si, and C powders. The MA formation conditions of Ti₃SiC₂ were strongly affected by the ball size for the conditions used. MA using large balls (20.6 mm in diameter) enhanced the formation of Ti₃SiC₂, probably via an MA-triggered combustion reaction, but the Ti₃SiC₂ phase was not synthesized only by the MA process using small balls (12.7 mm in diameter). Fine powders containing 95.8 vol% Ti₃SiC₂ can be obtained by annealing the mechanically alloyed powder at relatively low temperatures.     

Preparation of Porous Cr3C2 Grains with Cr2O3

Porous Cr₃C₂ grains (∼300 to 500 μm) with ∼10 wt% of Cr₂O₃ were prepared by heating a mixture of MgCr₂O₄ grains and graphite powder at 1450° to 1650°C for 2 h in an Al₂O₃ crucible covered by an Al₂O₃ lid with a hole in the center. The porous Cr₃C₂ grains exhibited a three-dimensional network skeleton structure. The mean open pore diameter and the specific surface area of the porous grains formed at 1600°C for 2 h were ∼3.5 (μm and ∼6.7 m²/g, respectively. The present work investigated the morphology and the formation conditions of the porous Cr₃C₂ grains, and this paper will discuss the formation mechanism of those grains in terms of chemical thermodynamics.     

Oxidation of HIPed TiC Ceramics in Dry O2, Wet O2, and H2O Atmospheres

Isothermal oxidation of dense TiC ceramics, fabricated by hot-isostatic pressing at 1630°C and 195 MPa, was performed in Ar/O₂ (dry oxidation), Ar/O₂/H₂O (wet oxidation), and Ar/H₂O (H₂O oxidation) at 900°–1200°C. The weight change measurements of the TiC specimen showed that the dry, wet, and H₂O oxidation at 850°–1000°C is represented by a one-dimensional parabolic rate equation, while the oxidation in the three atmospheres at 1100° and 1200°C proceeds linearly. Cross-sectional observation showed that the dry oxidation produces a lamellar TiO₂ scale consisting of many thin layers, about 5 μm thick, containing many pores and large cracks, while H₂O-containing oxidation decreases pores in number and diminishes cracks in scales. Gas evolution of CO₂ and H₂ with weight change measurement was simultaneously followed by heating the TiC to 1400°C in the three atmospheres. Cracking in the TiO₂ scale accompanied CO₂ evolution, and the H₂O-containing oxidation produced a small amount of H₂. A piece of single crystal TiC was oxidized in ¹⁶O₂/H₂¹⁸O to reveal the contribution of O from H₂O to the oxidation of TiC by secondary ion mass spectrometry.     

Synthesis of Al4SiC4

The conditions necessary for synthesizing Al₄SiC₄ from mixtures of aluminum, silicon, and carbon and kaolin, aluminum, and carbon, as starting materials, were examined in the present study. The standard Gibbs energy of formation for the thermodynamic reaction SiC( s ) + Al₄C₃( s ) = Al₄SiC₄( s ) changed from positive to negative at 1106°C. SiC and Al₄C₃ formed as intermediate products when the mixture of aluminum, silicon, and carbon was heated in argon gas, and Al₄SiC₄ then formed by reaction of the SiC and Al₄C₃ at >1200°C. Al₄C₃, SiO₂, Al₂O₃, SiC, and Al₄O₄C formed as intermediate products when the mixture of kaolin, aluminum, and carbon was heated under vacuum, and Al₄SiC₄ formed from a reaction of those intermediate products at >1600°C.     

Experimental Investigation and Thermodynamic Calculation of the Titanium–Silicon–Carbon System

The 1100°C isothermal section and the isopleths at 5, 10, and 15 at.% C in the Ti–Si–C system were determined by DTA and XRD methods. Five invariant reactions (L (liquid) = Si + SiC + TiSi₂ at 1330°C, L = TiSi + TiSi₂+ Ti₅Si₃C _x at 1485°C, L + Ti₅Si₃C _x = Ti₃SiC₂+ TiSi₂ at 1485°C, L + Ti₃SiC₂= TiSi₂+ SiC at 1473°C, and L + TiC = bcc-(Ti) + Ti₅Si₃C _x at 1341°C) were observed. The transition temperature for L + TiC = Ti₃SiC₂+ SiC was measured by the Pirani technique. Optimized thermodynamic parameters for the Ti–Si–C system were then obtained by means of the CALPHAD (calculation of phase diagrams) method applied to the present experimental results and reliable literature data. The calculations satisfactorily account for most of the experimental data.