低温退火对稀磁半导体(Ga,Mn)As性质的影响

利用低温分子束外延技术在GaAs(001)上外延生长出厚度为500nm的稀磁半导体(Ga,Mn)As薄膜. 双晶X射线衍射证明其为闪锌矿结构，晶格参数为0.5683nm，据此推导出其Mn含量为7%. 磁测量结果揭示其铁磁转变温度为65K. 观察了低温退火处理对(Ga,Mn)As磁性质的影响，发现生长后退火处理显著提高了其铁磁转变温度，可以达到115K.     

Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers

Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.     

Improving Spin‐Transport by Disorder

A new scheme dedicated to improving spin‐transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half‐metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn₃Ga by substituting Mn with a 3d‐transition metal.     

Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x=0.1–0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550–700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.     

The structure and magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film

High quality epitaxial single phase (Ga0.96Mn0.04)2O3 and Ga2O3 thin films have been prepared on sapphire substrates by using laser molecular beam epitaxy (L-MBE).X-ray diffraction results indicate that the thin films have the monoclinic structure with a (-201) preferable orientation.Room temperature (RT) ferromagnetism appears and the magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film are enhanced compared with our previous works.Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films.The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films.     

Magnetic anisotropy in (Ga,Mn)As on GaAs(1 1 3)As studied by magnetotransport and ferromagnetic resonance

The magnetic anisotropy of a 40-nm-thick (Ga,Mn)As film with 5% Mn grown on GaAs(1 1 3)A is studied by means of magnetotransport and ferromagnetic resonance (FMR) spectroscopy. In addition to the cubic and a weak uniaxial in-plane anisotropy, two uniaxial out-of-plane contributions along [1 1 3] and [0 0 1] are found. Using the anisotropy parameters determined from FMR, the longitudinal and transverse resistivities measured as a function of magnetic field orientation and strength are well modelled within the framework of a single ferromagnetic domain. In particular, the low-field data which are strongly affected by sudden jumps of the magnetization are well reproduced.     

Formation of (Ga,Mn)As nanowires and study of their magnetic properties

The molecular-beam epitaxy technique is used to synthesize arrays of (Ga,Mn)As nanowire crystals on a GaAs (111)B surface in the growth-temperature range 480–680°C. It is established that the formation of (Ga,Mn)As nanowires can be described in the context of a vapor-liquid-crystal mechanism. It is shown that the growth of (Ga,Mn)As nanowires must occur in conditions stabilized with respect to Ga. It is found that the field and temperature dependences of the static magnetic susceptibility for samples produced at the temperature 660°C exhibit paramagnetic behavior.     

Fe/(Ga,Mn)As异质结的界面结构和磁性质

Fe/（Ga,Mn）As heterostructures were fabricated by all molecular-beam epitaxy.Double-crystal X-ray diffraction and high-resolution cross-sectional transmission electron micrographs show that the Fe layer has a well ordered crystal orientation and an abrupt interface.The different magnetic behavior between the Fe layer and（Ga, Mn）As layer is observed by superconducting quantum interference device magnetometry.X-ray photoelectron spectroscopy measurements indicate no Fe₂As and Fe-Ga-As compounds,i.e.,no dead magnetic layer at the interface, which strongly affects the magnetic proximity and the polarization of the Mn ion in a thin（Ga,Mn）As region near the interface of the Fe/（Ga,Mn）As heterostructure.     

Coupling of Micromagnetic and Structural Properties Across the Martensite and Curie Temperatures in Miniaturized Ni‐Mn‐Ga Ferromagnetic Shape Memory Alloys

Micromagnetic structure evolution in Ni‐Mn‐Ga ferromagnetic shape memory thin films is investigated by means of temperature dependent magnetic force microscopy (TD‐MFM). The center of interest is the magnetic properties of epitaxial Ni‐Mn‐Ga thin films on MgO substrates across thermally induced phase transitions. Experimental results are discussed within the framework of competing magnetic interactions arising in stressed thin ferromagnetic films. Measurements on 14M martensite specimens are supplemented by three‐dimensional micromagnetic simulations. Corresponding calculated MFM micrographs are compared to experimental data. The influence of twin variant dimension and orientation on micromagnetic domain formation and wall structure is depicted from a theoretical point of view. A micromagnetic model system of partial flux closure is proposed and calculated analytically to estimate a stress induced magneto crystalline anisotropy constant in austenite Ni‐Mn‐Ga.     

Enhanced functionality in GaN and SiC devices by using novel processing

Some examples of recent advances in enhancing or adding functionality to GaN and SiC devices through the use of novel processing techniques are discussed. The first example is the use of ion implantation to incorporate transition metals such as Mn, Cr and Co at atomic percent levels in the wide bandgap semiconductors to produce room temperature ferromagnetism. A discussion is given of the phase space within which single-phase material can be obtained and the requirements for demonstrating the presence of a true dilute magnetic semiconductor. The ability to make GaN and SiC ferromagnetic leads to the possibility of magnetic devices with gain, spin FETs operating at low voltages and spin polarized light emitters. The second example is the use of novel oxides such as Sc₂O₃ and MgO as gate dielectrics or surface passivants on GaN. True inversion behavior has been demonstrated in gated MOS-GaN diodes with implanted n-regions supplying the minority carriers need for inversion. These oxide layers also effectively mitigate current collapse in AlGaN/GaN HEMTs through their passivation of surface states in the gate–drain region. The third example is the use of laser drilling to make through-wafer via holes in SiC, sapphire and GaN. The ablation rate is sufficiently high that this maskless, serial process appears capable of achieving similar throughput to the more conventional approach of plasma etching of vias. The fourth example is the use of either ungated AlGaN/GaN HEMTs or simple GaN and SiC Schottky diodes as sensors for chemicals, biogens, radiation, combustion gases or strain. The sensitivity of either the channel carrier density or the barrier height to changes in surface condition make these materials systems ideal for compact robust sensors capable of operating at elevated temperatures.     

Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition

Semiconductors - A new design for diode heterostructures with (Ga, Mn)As ferromagnetic layers is experimentally investigated. The diode structures are fabricated using a combination of...     

基于GaAs的新型稀磁半导体材料(Ga,Mn)As

介绍了一种基于 Ga As的新型稀磁半导体材料 ( Ga,Mn) As,包括 ( Ga,Mn) As的制备方法、结构特性、磁性质及磁输运性质。最后 ,展望了 ( Ga,Mn) As的应用前景     

Ⅲ-Ⅴ族磁半导体材料的研究与进展

Mn、Fe等过渡金属元素的 - 族稀磁半导体 ( DMS)材料和铁磁 /半导体异质结材料由于具备半导体和磁性材料的综合特性 ,可望广泛应用于未来的磁 (自旋 )电子器件 ,从而使传统的电子工业面临一场新的技术革命。本文将对上述研究领域进行评述     

Magnetomechanical Four‐State Memory

With current non‐volatile memory technology approaching intrinsic storage density limits, new data storage technologies are under development. Probe‐based storage systems provide alternatives to conventional mass storage technologies. Ni‐Mn‐Ga, a ferromagnetic shape memory alloy (FSMA), is proposed as a medium for multi‐bit storage using scanning probe microscopy (SPM) techniques. Local modifications of the magnetic stray field were achieved using nanoindentation. Magnetic poles collect within the indentation, which is leveraged to control the magnetic stray field for the patterning of magnetic information. Four magnetic‐based memory states are possible due to magnetic field or stress‐induced twin rearrangement along two crystal orientations, each with two possible magnetic orientations.     

Anti‐Ferromagnet Controlled Tunneling Magnetoresistance

The requirement for high‐density memory integration advances the development of newly structured spintronic devices, which have reduced stray fields and are insensitive to magnetic field perturbations. This could be visualized in magnetic tunnel junctions incorporating anti‐ferromagnetic instead of ferromagnetic electrodes. Here, room‐temperature anti‐ferromangnet (AFM)‐controlled tunneling anisotropic magnetoresistance in a novel perpendicular junction is reported, where the IrMn AFM stays immediately at both sides of AlO_x tunnel barrier as the functional layers. Bi‐stable resistance states governed by the relative arrangement of uncompensated anti‐ferromagnetic IrMn moments are obtained here, rather than the traditional spin‐valve signal observed in ferromagnet‐based tunnel junctions. The experimental observation of room‐temperature tunneling magnetoresistance controlled directly by AFM is practically significant and may pave the way for new‐generation memories based on AFM spintronics.     

Introducing immobilized metal phthalocyanines as spin-injection and detection layers in organic spin-valves: Spin-tunneling and spin-transport regimes

In (organic) spin-valve devices, two ferromagnetic electrodes having different coercive fields are used to achieve an anti-parallel configuration necessary to enforce spin-flip of electrons within the semiconductor spacer layer. Here we report a use of immobilized magnetic organic molecules as spin-injection and spin-detection layers to form pre-fabricated spin-valve devices. While immobilized manganese- and nickel-phthalocyanines were used as spin-injection and spin-detection layers both, copper phthalocyanine acted as the spacer layer in the all-organic spin-valve devices.In the current-voltage characteristics of parallel and anti-parallel configurations, the electrical resistance was always higher for the latter one implying positive magnetoresistance in the material. By lowering thickness of the spacer layer down to a monolayer region, a tunneling regime could be achieved; spin-flip process in organic spin-valves has been found to be facile in the tunneling regime as compared to that during the spin-transport process through a thicker spacer layer.     

Ab-initio study of magnetic,electronic and optical properties of ZnSe doped-transition metals

The full potential linear augmented plane wave (FPLAPW) based on density-functional theory (DFT) is employed to study the electronic, magnetic and optical properties of some transition metals doped ZnSe. Calculations are carried out by varying the doped atoms. Five 3d transition elements were used as a dopant: Cr, Mn, Fe, Co and Cu in order to induce spin polarization. Our results show that, Mn and Cu-doped ZnSe could be used in spintronic devices only if additional dopants are introduced; on the contrary, transition elements showing delocalized quality such as Cr, Fe and Co doped ZnSe might be promising candidates for application in spintronics. In addition, the three materials (CrZnSe, FeZnSe and CoZnSe) are half-metallic and ferromagnetic with an important magnetic moment ranging from 3 μ_B to 4 μ_B. Furthermore, we have computed optical properties of pure ZnSe, CrZnSe, FeZnSe and CoZnSe, and found a pronounced peak occurring at low energies in all the optical curves due to TM impurity and a low difference between doped and undoped compounds for higher energies.     

GaN and other materials for semiconductor spintronics

Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.     

纳米电子器件-高峰值峰谷电流比InP基共振隧穿二极管的实现

利用分子束外延技术研制出InP基IhAs/In0.53Ga0.47As/AlAs共振隧穿二极管,其中势垒为10个单分子AlAs,势阱由8个单分子层In0.53Ga0.47As阱和4个单分子层InAs子阱组成.室温下峰值电流密度接近3kA/cm2,峰和谷的电流密度比率达到19.     

全同周期排列的纳米团簇阵列的自发生长

我们提出了利用分子束外延的自组织生长过程大面积制备二维周期性纳米金属团簇阵列的一种方法.该方法的普适性通过研究 Si(111)-7×7衬底上生长的Ⅲ族元素、贵金属、磁性金属以及它们的合金团簇得到证实.通过对In团族点阵的原位扫描隧道显微镜分析和第一性原理总能量计算,我们确定了这些团簇独特的原子结构,阐明了这些结构的形成机理.我们发现团簇和表面之间的强相互作用是获得团簇的特定尺寸和其有序排列的关键所在.