Slanted-rib waveguide InGaAsP-InP polarization converters

We summarize experimental and theoretical results for a compact (330 /spl mu/m), low-loss on-chip InGaAsP-InP polarization converter. The converter, which contains a single asymmetric rib waveguide segment, exhibits a measured conversion efficiency of -16 dB and a response of /spl plusmn/3 dB with a maximum excess loss of 0.02 dB over the entire wavelength region from 1530 to 1570 nm.     

Genetic algorithm and finite-element design of short single-section passive polarization converter

A very short passive polarization rotator is proposed, consisting of a single-section asymmetric waveguide. The use of a genetic algorithm together with the finite-element method was crucial to achieve a structure with 99% polarization conversion and a length of 90 /spl mu/m. This optimum structure exhibits a low total insertion loss: 1.16 dB.     

Estimation of polarization crosstalk at a micro-bend in Si-photonic wire waveguide

The singlemode Si-photonic wire waveguide allows sharp bends, which significantly expands the design flexibility of optical devices and circuits. Here, the suppression of the polarization crosstalk at a sharp bend will be an important issue, since a large crosstalk affects the performance of devices and circuits. In this study, the three-dimensional (3-D) finite-difference time-domain (FDTD) simulation showed that the crosstalk at a 90/spl deg/-bend with a radius of 0.35-1.75 /spl mu/m is less than -25 dB at a wavelength of 1.55 /spl mu/m. In the experiment, the crosstalk from TE-like to TM-like polarization was evaluated to be -13 dB to -10 dB. This large value was explained by a small tilt of waveguide sidewalls, which seriously increased the crosstalk. In addition, it was found in the calculation that some combinations of bends increase or decrease the crosstalk, and that a U-shape bend is the most effective for the suppression of the crosstalk.     

Novel compact polarization converters based on ultra short bends

A novel integrated polarization converter based on ultra short bends is presented, which has a potential for low loss and small device size. A conversion value of 85% was experimentally measured with excess loss of 2.7 dB and overall dimensions of 975/spl times/83 /spl mu/m. Also 45% conversion was measured with extremely low excess loss of 0.4 dB for a device size of 760/spl times/86 /spl mu/m.     

Proposal for a polarization-independent integrated optical circulator

A polarization-independent waveguide circulator design is proposed which is well suited for monolithic integration. The circulator consists of multimode interferometers, half-wave plates, and Faraday rotators all in waveguide form. The length of the circulator is 712 /spl mu/m. Simulations show the circulator to have 25 dB of isolation and 1.3 dB of insertion loss at a wavelength of 1.55 /spl mu/m.     

Low-loss and thermally stable TE-mode selective polymer waveguide using photosensitive fluorinated polyimide

A low-loss, thermally stable TE-mode selective optical waveguide was fabricated using a photosensitive fluorinated polyimide. The polymer undergoes photocrosslinking under UV exposure, thus changing its refractive index. The photocrosslinking-induced refractive index change was utilized to form channel waveguides. The propagation losses of the photosensitive fluorinated polyimide waveguides were less than 0.3 and 0.5 dB/cm for TE polarization at wavelengths of 1.3 and 1.55 /spl mu/m, respectively. The measured polarization extinction ratio was higher than 29 and 28 dB at wavelengths of 1.3 and 1.55 /spl mu/m, respectively. The refractive index of fluorinated polyimide film remains almost constant after being stored at 150/spl deg/C for 600 min.     

Compact polarization-independent Mach-Zehnder space switch combining carrier depletion and the quantum confined Stark effect

We have developed an n-doped InGaAs-InAsP quantum well between InP, which is suited for a polarization-independent Mach-Zender interferometric (MZI) space switch operating at 1.55 /spl mu/m. The InAsP is compressively strained and the InGaAs is tensile strained for polarization independence and for strain balancing. The important boundary condition for the design of this structure is the waveguide loss, which we limit to 0.6 dB/cm, and the crosstalk due to imbalance in the MZI, which we limit to <-30 dB. To reduce the size of the phase shifting region, while imposing this boundary condition, we combine the quantum confined Stark effect (QCSE) effect and the carrier-depletion effect by using an n-doped quantum well. The QCSE was first optimized for an undoped InGaAs-InAsP quantum well. A polarization independent /spl Delta/n of 7.8/spl middot/10/sup -4/ at 100 kV/cm was obtained at the expense of 0.2-dB/cm excess waveguide loss and 0.1-dB/mm electroabsorption loss. The carrier-depletion effect in a 2/spl middot/10/sup 11/cm/sup -2/-doped QW increases /spl Delta/n with a factor 2.6 to 2/spl middot/10/sup -3/, at the expense of 0.4-dB/cm free-carrier absorption-induced waveguide loss. The combination of the QCSE and carrier depletion results in a phase-shifter length of 0.46 mm for an MZI in push-pull configuration.     

Phase modulation efficiency and transmission loss of silicon optical phase shifters

This paper focuses on understanding the phase efficiency and optical loss of MOS-capacitor-based silicon waveguide phase shifters. A total of nine designs have been fabricated using poly-silicon and characterized at wavelengths around 1.55 /spl mu/m. Detailed comparison of design parameters shows that scaling down the waveguide dimensions, placing the capacitor gate oxide near the center of the optical mode, and reducing the oxide thickness significantly enhance phase modulation efficiency. Our best design to date demonstrates a /spl pi/-radian phase shift with 0.8-cm device length and 3-V drive. This phase shifter has a transmission loss of 15 dB, the primary source of which is the poly-silicon regions inside the device. An improved material can reduce loss to as little as 4 dB.     

Integrated optical waveguide polarizer based on photobleaching-induced birefringence in an electrooptic polymer

A TE-pass waveguide polarizer is fabricated by utilizing the photobleaching-induced birefringence at room temperature in an electrooptic polymer. The polarizer consists of the photobleached waveguide supporting only TE mode, which is integrated in the middle of the etched rib waveguide supporting both TE and TM modes. It has a simple structure and requires no high temperature process like poling. The measured polarization extinction ratio is about 21 dB at the wavelengths of 1.3 and 1.55 /spl mu/m, and the estimated excess loss is about 0.4 dB.     

Analysis of partially depleted absorber waveguide photodiodes

This paper presents the analysis and characterization of partially depleted absorber (PDA) photodiodes. Coupling to these photodiodes is achieved through a planar short multimode waveguide (PSMW) structure. Electric transport in the PDA structure has been investigated and an equivalent electric circuit was developed. Measurements on 5/spl times/20 /spl mu/m/sup 2/ PSMW PDA photodiodes have shown 0.80 A/W responsivity with a fiber mode diameter as high as 6 /spl mu/m. The transverse electric/transverse magnetic polarization dependence was <0.5/spl plusmn/0.3 dB with -1-dB input coupling tolerances as high as /spl plusmn/2.0 and /spl plusmn/1.3 /spl mu/m for horizontal and vertical directions. The -3-dB bandwidth was 50 GHz, and the -1-dB compression current at 40 GHz was 17 mA corresponding to +4.5 dBm radio frequency (RF) power. Compared to similar evanescently coupled p-i-n photodiodes, the saturation current has been significantly improved while maintaining comparable bandwidth and high responsivity.     

Single-mode and polarization-independent silicon-on-insulator waveguides with small cross section

The fabrication restrictions that must be imposed on the geometry of optical waveguides to make them behave as single-mode devices are well known for relatively large waveguides, with shallow etch depth. However, the restrictions for small waveguides (/spl sim/1 /spl mu/m or less in cross section) are not well understood. Furthermore, it is usually a requirement that these waveguides are polarization independent, which further complicates the issues. This paper reports on the simulations of the conditions for both single-mode behavior and polarization independence, for small and deeply etched silicon-on-insulator (SOI) waveguides. The aim is to satisfy both conditions simultaneously. The results show that at larger waveguide widths, waveguide etch depth has little effect on the mode birefringence because the transverse-electric (TE) mode (horizontal-polarized mode) is well confined under the rib region. However, at smaller rib widths, the etch depth has a large influence on birefringence. An approximate equation relating the rib-waveguide width and etch depth to obtain polarization-independent operation is derived. It is possible to achieve single-mode operation at both polarizations while maintaining polarization independence for each of the waveguide heights used in this paper but may be difficult for other dimensions. For example, a 1-/spl mu/m SOI rib waveguide with an etch depth of 0.64 /spl mu/m and rib width of 0.52 /spl mu/m is predicted to exhibit such characteristics.     

Photonic integrated circuits by DUV-induced modification of polymers

The results achieved with polymer Y-splitters, codirectional couplers, and multimode interference couplers, realized by deep ultraviolet lithography are presented. The devices are designed and fabricated for the 1.55-/spl mu/m wavelength region and have a waveguide loss of 1 dB/cm. The waveguide width is 7.5 /spl mu/m. The fiber-chip coupling loss is 0.5 dB per facet. The polarization-dependent loss is <0.15 dB.     

80-ps and 4-ns pulse-pumped gains in a GaP-AlGaP semiconductor Raman amplifier

The characteristic of 80-ps mode-locked (ML) pulse-pumped gain, which results in a decline that changes from a linear gradient to a square-root gradient at introduced pump densities exceeding 10 dB, makes it difficult to develop pulse-pumped gains for high efficiency amplification. To overcome this disadvantage with pumping, we compared an 80-ps ML pulse and 4-ns Q-switched pulse in a straight waveguide. The amplification of the 4-ns pulse was linear and had a maximum gain of 23.3 dB at an introduced pump density of 1.4 W//spl mu/m/sup 2/ in a straight waveguide. The gain was more efficient than with the 80-ps pulse, which was limited by the optical damage threshold of the input antireflective coating (1.6 W//spl mu/m/sup 2/). These high-gain operations should enable semiconductor Raman amplifiers to be used for detecting signals from chemical or biological materials, in addition to infrared light frequency selective amplification with wavelength-division multiplexing in optical communications.     

High-efficiency 1.3 /spl mu/m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links

High-efficiency electroabsorption waveguide modulators have been designed and fabricated using strain-compensated InAsP-GaInP multiple quantum wells at 1.32-/spl mu/m wavelength. A typical 200-/spl mu/m-long modulator exhibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW. The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-/spl Omega/ load termination. When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB is achieved at 10 mW input optical carrier power. These analog link characteristics are the first reported using MQW electroabsorption waveguide modulators at 1.32 /spl mu/m.     

Flip-chip bonded 0.85-/spl mu/m bottom-emitting vertical-cavity laser array on an AlGaAs substrate

We report high-performance 0.85-/spl mu/m bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) on an AlGaAs substrate with 2.1 mA threshold current density 4.2 mW maximum output power, 11.7% power conversion efficiency and a maximum operating temperature of 130/spl deg/C. We also demonstrate a flip-chip bonded 0.85-/spl mu/m bottom-emitting VCSEL array, and confirm all pixels across the 8/spl times/8 VCSEL array operate at a f/sub 3/ dB bandwidth of 2.6 GHz at only 4.2 mA.     

Polarization independent bulk active region semiconductor optical amplifiers for 1.3 /spl mu/m wavelengths

Semiconductor optical amplifiers for 1.3 /spl mu/m are realized combining single-step grown bulk InGaAsP active region with ridge-waveguides. Achieved fiber-to-fiber gains are in excess of 27 dB with spectral ripples below 0.2 dB. Gain is polarization insensitive to within 1 dB over the entire range of driving current, 1.28 /spl mu/m to 1.34 /spl mu/m wavelength and 10/spl deg/C to 50/spl deg/C heat sink temperature. Intrinsic noise figure is 6.3 dB. Gain saturates at +10 dBm.     

MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region

In this letter, we report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 /spl mu/m, which are red-shifted from the material gain peak wavelength (/spl lambda/=1.05 /spl mu/m) by 100, 200, and 300 /spl Aring/, respectively. The /spl lambda/=1.06-/spl mu/m device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the /spl lambda/=1.08 /spl mu/m device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet. The /spl lambda/=1.06-, 1.07-, and 1.08-/spl mu/m device exhibits an extinction ratio of /spl ges/20 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively.     

Stress-induced polymer waveguides operating at both 1.31 and 1.55 /spl mu/m wavelengths

Metal-defined polymer optical waveguides have been demonstrated for the first time. A metal strip patterned on top of a polymer slab waveguide causes a stress-induced refractive index change, providing lateral optical mode confinement within the core layer. Fabricated waveguides exhibit low propagation loss values of 1.1 dB/cm at 1.31 /spl mu/m and 1.3 dB/cm at 1.55 /spl mu/m for both TE and TM polarisations.     

A novel ultracompact two-mode-interference wavelength division multiplexer for 1.5-/spl mu/m operation

A novel ultracompact 2/spl times/2 wavelength division multiplexer (WDM) for 1.55-/spl mu/m operation based on highly dispersive two-mode interference (TMI) was designed, theoretically modeled, and verified using a finite-difference-time-domain (FDTD) method. A two-moded waveguide assisted with a dispersive tooth-shaped grating provided a mode-dependent reflection band of central wavelength at 1.55 /spl mu/m. The wavelengths of 1538 and 1572 nm that were at the band edges and had the lowest reflection losses and relatively high dispersion were selected for wavelength multiplexing. The result showed that the wavelengths were separated by grating dispersion in a coupler length of 75 /spl mu/m which was much shorter than the required length of 1.1 mm in a regular TMI multiplexer of no grating. Insertion loss of about 1.7 dB and channel contrast of about 12 dB were achieved.     

1.31-1.55-/spl mu/m phased-array demultiplexer on InP

The first demultiplexers on InP at 1.31-1.55 /spl mu/m based on low-order waveguide arrays have been fabricated and characterized. We show the calculated and measured spectral responses of two devices with 6 and 10 waveguides in the grating. The on-chip loss of the devices is 4.5 dB and the crosstalks are down to -25 dB. Thanks to their large bandwidth, the devices are polarization insensitive and no strong influence of the temperature is seen.