Real-Time Visual Sensing for Task Planning in a Field Navigation Vehicle

Some agricultural tasks consist of applying chemical treatment to the crops, but the products are applied throughout the field in most cases. In order to automate these tasks, and to apply the products more accurately, an autonomous vehicle can be used. The vehicle is intended to navigate autonomously through a field where plants are arranged in rows, following the crop rows. Its main sensor is a camera which takes perspective images of the area close to and in front of the vehicle. The vehicle is equipped with a treating device consisting of a bar with 30 spray nozzles. When the plants, which have been identified at some distance in front of the vehicle, reach the position of the treating device, the nozzles which are over a plant are switched on, thus applying the treatment. The typical vehicle speed is 1 m/s and the video frame rate is 10 Hz. A distributed system, consisting of several processors interconnected by serial links, is used, where each module accomplishes a different task: vehicle control, guidance information, image segmentation, map building and nozzle switching. The work explained in this paper is mainly focused on the latter parts of the system, map building and nozzle switching, and stresses the methods used to fit the time requirements. Real-time performance is achieved. Some results and time measurements are given.     

Humidity-insensitive and low oxygen dependence tungsten oxide gas sensors

Gas sensing characteristics of WO₃ powder and its physical properties under different heat treatment conditions have been investigated. The WO₃ powder was synthesized by wet process from ammonium tungstate parapentahydrate and nitric solution. The precipitated product was then calcined at 300–800 °C for 2–12 h. The physical properties of the products were characterized by using X-ray diffractometer (XRD), scanning electron microscope (SEM), and BET method. It was found that the crystallite size, particle size and surface area of the WO₃ powders were in the range of 30–45 nm, 0.1–3.0 μm and 1.2–3.7 m²/g, respectively. Calcination at higher temperature and longer time led to the increase of particle size by more than 300%, and reduction in specific surface area by more than 60%. However, the crystallite size was found to increase only by ∼30% under identical heat treatment. These results inferred that such heat treatment had more profound effect on crystallite aggregation than on crystallite growth. Gas sensing measurement showed that the largest change of output voltage to both ethyl alcohol and ammonia was obtained from the sensor calcined at 600 °C for 2 h, which had the highest surface area. However, the highest sensitivity which is defined as the ratio of sensor's resistance in air to that in the sample gas, R_air/R_gas, was obtained from the sensor calcined at 600 °C for 6 h due to its highest background resistance in air. Moreover, it was also found that the sensors were less sensitive to the oxygen content in the carrier gas and did not sensitive at all to water vapor.     

Strategies in deep wet etching of Pyrex glass

This paper establishes the strategies for deep wet etching of one of the most common glasses: Pyrex. There are two way for increasing the etch depth: increasing the etch rate or increasing the resistance of the mask in the etching solution. The paper analyzes the methods for increasing the glass etch rate in HF solutions: annealing, concentration, ultrasonic agitation and temperature. The generation of the defects is investigated. The main factors that affect the degradation of the mask are: type, value and gradient of the residual stress and the hydrophilicity of the surface. Cr/Au mask is used for illustration. A new method for deep wet etching of glass using Cr/Au mask and photoresist is established. The result of this method is the best thus far as reported in the literature: 85 min deep wet etching in HF 49% which is equivalent to etching of more than 500 μm deep in the Pyrex glass material.     

Simultaneous determination of epinephrine and ascorbic acid at the electrochemical sensor of triazole SAM modified gold electrode

The electrochemical sensor of triazole (TA) self-assembled monolayer (SAM) modified gold electrode (TA SAM/Au) was fabricated. The electrochemical behaviors of epinephrine (EP) at TA SAM/Au have been studied. The TA SAM/Au shows an excellent electrocatalytic activity for the oxidation of EP and accelerates electron transfer rate. The diffusion coefficient is 1.135 × 10⁻⁶ cm² s⁻¹. Under the optimum experiment conditions (i.e. 0.1 mol L⁻¹, pH 4.4, sodium borate buffer, accumulation time: 180 s, accumulation potential: 0.6 V, scan rate: 0.1 Vs⁻¹), the cathodic peak current of EP versus its concentration has a good linear relation in the ranges of 1.0 × 10⁻⁷ to 1.0 × 10⁻⁵ mol L⁻¹ and 1.0 × 10⁻⁵ to 6.0 × 10⁻⁴ mol L⁻¹ by square wave adsorptive stripping voltammetry (SWASV), with the correlation coefficient of 0.9985 and 0.9996, respectively. Detection limit is down to 1.0 × 10⁻⁸ mol L⁻¹. The TA SAM/Au can be used for the determination of EP in practical injection. Meantime, the oxidative peak potentials of EP and ascorbic acid (AA) are well separated about 200 ± 10 mV at TA SAM/Au, the oxidation peak current increases approximately linearly with increasing concentration of both EP and AA in the concentration range of 2.0 × 10⁻⁵ to 1.6 × 10⁻⁴ mol L⁻¹. It can be used for simultaneous determination of EP and AA.     

Angular vertical comb actuators assembled on-chip using in-plane electrothermal actuators and latching mechanisms

We have designed, fabricated and tested self-aligned angular vertical comb-drive (AVC) actuators by on-chip assembly using in-plane electrothermal actuators and latching mechanisms. The on-chip assembly process is carried out by engaging latching mechanism connected to the torsion bars through the off-centered thinned down silicon beams. When the latching mechanism is fully engaged, the assembled AVC actuator forms permanent initial tilt angle by the retraction force of electrothermal actuators. The AVC actuators and latching mechanisms are fabricated on a silicon-on-insulator (SOI) wafer using three photomasks and three times of deep etch steps. The maximum optical scan angle of 30.7° is achieved at 4.56 kHz under the sinusoidal driving voltage of 0–80 V applied to the AVC actuator. After the reliability test performed by operating the actuator for 1.6 × 10⁸ cycles at its resonance, the measured optical scan angle variation and resonant frequency change were within 1.1% and 8 Hz, respectively, and the robustness of the latched mechanism was ensured.     

Electroactive polymer based microfluidic pump

A planar, valveless, microfluidic pump using electrostrictive poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] based polymer as the actuator material is presented. P(VDF-TrFE) thick films having a large electrostrictive strain ∼5–7% and high elastic energy density of 1 J/cm³ have been used in a unimorph diaphragm actuator configuration. The microfluidic pump was realized by integrating a nozzle/diffuser type fluidic mechanical-diode structure with the polymer microactuator. The P(VDF-TrFE) unimorph diaphragm actuator, 80 μm thick and 2.2 mm × 2.2 mm in lateral dimensions, showed an actuation deflection of 80 μm for an applied electric field of 90 MV/m. The microfluidic pump could pump methanol at a flow rate of 25 μl/min at 63 Hz with a backpressure of 350 Pa. The flow rate of this pump could be easily controlled by external electrical field. Two different sizes of nozzle/diffuser elements were studied and the pumping efficiency of these structures is 11 and 16%, respectively.     

Design and fabrication of a new MEMS capacitive microphone using a perforated aluminum diaphragm

In this paper, a novel single-chip MEMS capacitive microphone is presented. The novelties of the method relies on the moveable aluminum (Al) diaphragm positioned over the backplate electrode, where the diaphragm includes a plurality of holes to allow the air in the gap between the electrode and the diaphragm to escape and thus reducing acoustical damping in the microphone. Spin-on-glass (SOG) was used as a sacrificial and isolating layer. Backplate is monocrystalline silicon wafer, that it is more stiff. This work will focus on design, simulation, fabrication and characterization of the microphone. The structure has a diaphragm thickness of 3 μm, a diaphragm size of 0.5 mm × 0.5 mm, and an air gap of 1.0 μm. The results show that the pull-in voltage is 105 V, the initial stress of evaporated aluminum diaphragm is around 1500 MPa and the zero bias capacitance of microphone is 2.12 pF. Comparing with the previous works, this microphone has several advantages: the holes have been made on diaphragm, therefore no need of KOH etching to make back chamber, in this way the chip size of each microphone is reduced. The fabrication process uses minimal number of layers and masks to reduce the fabrication cost.     

A micro shear stress sensor based on laterally aligned carbon nanotubes

This paper reports the development of a micro thermal shear stress sensor that utilizes multiwalled carbon nanotubes as the sensing element. The sensor was fabricated by laterally aligning randomly distributed nanotubes into a 360 μm long and 90 μm wide conductive trace between two triangular shaped micro electrodes through the use of a high frequency AC electric field. During operation, the aligned nanotubes are electrically heated to an elevated temperature and surface shear stress is measured indirectly by the amount of convective heat transfer from the heated nanotubes to the surrounding fluid flow.The nanotube alignment process was primarily controlled by three different phenomena: dielectrophoresis, joule heating, and Brownian motion. Numerical simulations, together with experimental verifications, indicated that a successful alignment could only be realized if: (1) the dielectrophoretic force was positive, (2) the electro-thermal force was also positive, and (3) the dielectrophoretic force was high enough to overcome Brownian motion. The aligned nanotube trace has a room-temperature resistance of 580 Ω, which corresponds to a conductivity of 2.7 × 10⁴ S/m. The absolute temperature coefficient of resistivity ranges from 0.01 to 0.04% °C⁻¹. This is about one order of magnitude smaller than the highly doped polysilicon sensing material used in the MEMS micro shear stress sensor. The shear stress sensitivity of the nanotube trace operated at a 3% overheat ratio is found to follow the theoretical sensor power ∝ (shear stress)^1/3 relationship, provided the shear stress level is higher than 0.34 mPa. This result confirms the feasibility of using aligned multi-walled carbon nanotubes as a thermal shear stress sensing material.     

A MEMS-based resonant-scanning lamellar grating Fourier transform micro-spectrometer with laser reference system

A lamellar grating Fourier transform infra-red (FTIR) micro-spectrometer is presented in which the device is electromagnetically actuated in resonant mode so as to achieve larger displacements with a lower driving voltage. By actuating at resonance, we can also have a design with a higher spring stiffness design such that the micro-spectrometer will have little influence from external perturbation. A data acquisition electronic system is designed such that the interferogram of the IR source can still be acquired at a fixed optical path distance (OPD) intervals. This is achieved by using a reference laser source. Working at a resonant frequency of 330 Hz, a 100 μm (bi-directional) displacement is achieved by the device with an input voltage of 2.2 V. A tunable laser source is used to demonstrate the system performance. The peak of the recorded spectra is very close to the actual wavelength of the IR, with a maximum difference of less than 5 nm.     

Spin-valve planar Hall sensor for single bead detection

The planar Hall effect (PHE) sensor with a junction size of 3 μm × 3 μm for a single micro-bead detection has been fabricated successfully using a typical spin-valve thin film Ta(5)/NiFe(16)/Cu(1.2)/NiFe(2)/IrMn(15)/Ta(5) nm. The PHE sensor exhibits a sensitivity of about 7.2 μV Oe^?1 in the magnetic field range of ±7 Oe approximately. We have performed an experiment to illustrated the possibility of single micro-bead detection by using a PHE sensor. A single micro-bead of 2.8 μm diameter size is secluded from 0.1% dilute solution of the Dynabeads^® M-280 dropped on the sensor surface and is located on the sensor junction by using a micro magnetic needle. The comparison of the PHE voltage profiles in the field range from 0 to 20 Oe in the absence and presence of a single micro-bead identifies a single Dynabeads^® M-280, the maximal signal change as large as ΔV ～ 1.1 μV can be obtained at the field ～6.6 Oe. The results are well described in terms of the reversal of a basic single domain structure.     

Using artificial neural networks to invert 2D DC resistivity imaging data for high resistivity contrast regions: A MATLAB application

MATLAB is a high-level matrix/array language with control flow statements and functions. MATLAB has several useful toolboxes to solve complex problems in various fields of science, such as geophysics. In geophysics, the inversion of 2D DC resistivity imaging data is complex due to its non-linearity, especially for high resistivity contrast regions. In this paper, we investigate the applicability of MATLAB to design, train and test a newly developed artificial neural network in inverting 2D DC resistivity imaging data. We used resilient propagation to train the network. The model used to produce synthetic data is a homogeneous medium of 100 Ω m resistivity with an embedded anomalous body of 1000 Ω m. The location of the anomalous body was moved to different positions within the homogeneous model mesh elements. The synthetic data were generated using a finite element forward modeling code by means of the RES2DMOD. The network was trained using 21 datasets and tested on another 16 synthetic datasets, as well as on real field data. In field data acquisition, the cable covers 120 m between the first and the last take-out, with a 3 m x-spacing. Three different electrode spacings were measured, which gave a dataset of 330 data points. The interpreted result shows that the trained network was able to invert 2D electrical resistivity imaging data obtained by a Wenner–Schlumberger configuration rapidly and accurately.     

Improvement of picture quality of high Xe content plasma display panels based on facing discharge suppression

This paper presents a waveform for driving a high-resolution plasma display panel (PDP) which uses a gas mixture of high Xe content. To prevent degradation of picture quality due to unstable discharges between two facing electrodes, the common electrode was biased at a negative voltage during the set-up period, and the data electrode was biased at a positive voltage during the sustain period. A pre-reset pulse was used before the first reset to reduce the reset voltage and to form a proper wall charge state for sustain discharges. This waveform could drive a 15% Xe 42 in. XGA (1024 × 768) PDP with the single-scan method. The measured black luminescence, peak luminescence, and contrast ratio were 0.45, 1490 cd/m², and 3310:1, respectively. The measured margin of the sustain voltage was better than ±10 V.     

Growth and electrical properties of highly (0 0 1)-oriented Pb(Zr0.52Ti0.48)O3 thin films on amorphous TiN buffered Si(1 0 0)

Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films with LaNiO₃ (LNO) as bottom electrodes have been grown on amorphous TiN buffered Si(1 0 0) substrates by pulsed laser deposition. It was found that highly (0 0 1)-oriented LNO films could be obtained even if TiN underlayers were amorphous. XRD analyses showed that the subsequently deposited PZT films were also preferentially (0 0 1)-oriented due to the template effect of the perovskite structured LNO films. Dielectric constant of the PZT thin films remained almost constant with frequency in the range from 10³ to 10⁶ Hz, and tangent loss was as small as 0.02 at high frequencies. The remnant polarization and coercive field of an Au/PZT/LNO capacitor were typically 20 μC/cm² and 30 kV/cm, respectively. C–V and I–V characteristics revealed the capacitance and leakage current variations with applied voltage were asymmetric when the bottom electrode was negatively as well as positively biased, indicating that ferroelectric/electrode interfaces and space charges play an important role in the electrical properties of ferroelectric capacitors.     

Glass-based BioMEMS devices for optically excited cell impedance measurement

This paper presents for the first time the design and fabrication of BioMEMS devices for living cells’ electrochemical impedance measurement under optical excitation. An interdigitated electrode design is adopted in order to increase the sensitivity of living cells’ impedance measurement. The magnitudes of the parasitic components were calculated and their influence on the chip performance was simulated. It is shown that our glass-based realization enables a very good performance up to a measurement frequency of 10 MHz when the solution resistance is 1 MΩ. The main difficulties that had to be solved in the fabrication process were related to adhesion and patterning of the various metal films, and especially to developing the correct bonding recipe. Unlike most of the reported data, no direct bonding was employed in the realization of our devices, but rather an intermediary polymer layer (e.g. SU8 or BCB) was used. The impedance of the devices with living yeast cells are measured with and without laser excitation at 532 nm. The laser excitation also redistributes the cells, and the suspending cells in the PBS buffer settle down much quicker after the light excitation.     

Design of high speed gate driver employing IZO TFTs

This paper presents a new bi-side gate driver integrated by indium-zinc-oxide thin film transistors (IZO TFTs). Our optimized operate method can achieve high speed performance by employing a lower duty ratio (25%) CK2 with its pulse located in the middle of the pulse of CK2L to fully use the bootstrapped high voltage of node Q. In addition, the size of devices is optimized by calculation and simulation, and the function of the proposed gate driver is predicted by the circuit simulation. Furthermore, the proposed gate driver with 20 stages is fabricated by the IZO TFTs process. It is shown that a 2.6 μs width pulse with good noise-suppressed characteristic can be successfully output at the condition of R_load = 6 kΩ and C_load = 150 pF. The power consumption of the proposed gate driver with 20 stages is measured as 1 mW. Hence, the proposed gate driver may be applied to the display of 4K resolution (4096 × 2160) at a frame rate of 120 Hz. Moreover, there is a good stability for the proposed gate driver under 48 h operation.     

Stress-induced atom diffusion at thermosonic flip chip bonding interface

The thermosonic flip chip bonding was realized with a lab TSFC bonder, and 60–80 g/bump bonding strength was obtained. With the scanning electron microscope (SEM), core-like bonding interface, ductile dimples fracture were observed on the pads bonding interface, dislocation density incensement and dislocation nets were found at the pad. What's more, slip bands and crossed slip lines were observed on the surface and in the inner of bump. Then a finite elements (FE) model was used to simulate the stress concentration at the bonding interface. After that, the relationships among stress concentration, dislocation multiplication and propagation, driving force for Au and Ag atom inter-diffusion at bonding interface were discussed. Experiment results and theory analysis indicate that the ultrasonic vibration induces stress concentration at the bonding interface edge, which causes dislocation multiplication and propagation on bumps and pads, causes high density dislocation net and provides short-circuit diffusion channel and driving force for Au and Ag atom inter-diffusion. Enhancing the stress concentration effects, such as increasing ultrasonic frequency, may be helpful for better atom diffusion and bonding strength. This may be one of the reasons why higher ultrasonic frequencies (such as 132, 125, 108 kHz) thermosonic bonding is better than lower ultrasonic frequencies (such as 60 kHz) thermosonic bonding in industry for better reliability and bonding speed.     

Spider specie identification and verification based on pattern recognition of it cobweb

Biodiversity conservation is a global priority where the study of every type of living form is a fundamental task. Inside the huge number of the planet species, spiders play an important role in almost every habitat. This paper presents a comprehensive study on the reliability of the most used features extractors to face the problem of spider specie recognition by using their cobwebs, both in identification and verification modes. We have applied a preprocessing to the cobwebs images in order to obtain only the valid information and compute the optimal size to reach the highest performance. We have used the principal component analysis (PCA), independent component analysis (ICA), Discrete Cosine Transform (DCT), Wavelet Transform (DWT) and discriminative common vectors as features extractors, and proposed the fusion of several of them to improve the system’s performance. Finally, we have used the Least Square Vector Support Machine with radial basis function as a classifier. We have implemented K-Fold and Hold-Out cross-validation techniques in order to obtain reliable results. PCA provided the best performance, reaching a 99.65% ± 0.21 of success rate in identification mode and 99.98% ± 0.04 of the area under de Reveicer Operating Characteristic (ROC) curve in verification mode. The best combination of features extractors was PCA, DCT, DWT and ICA, which achieved a 99.96% ± 0.16 of success rate in identification mode and perfect verification.     

Ferroelectric properties of direct-patterned half-micron thick PZT film

Ferroelectric properties of direct-patterned PZT(PbZr_0.52Ti_0.48O₃) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.     

Characterisation of PZT thin film micro-actuators using a silicon micro-force sensor

This paper reports on the measurements of displacement and blocking force of piezoelectric micro-cantilevers. The free displacement was studied using a surface profiler and a laser vibrometer. The experimental data were compared with an analytical model which showed that the PZT thin film has a Young's modulus of 110 GPa and a piezoelectric coefficient d_31,f of 30 pC/N. The blocking force was investigated by means of a micro-machined silicon force sensor based on the silicon piezoresistive effect. The generated force was detected by measuring a change in voltage within a piezoresistors bridge. The sensor was calibrated using a commercial nano-indenter as a force and displacement standard. Application of the method showed that a 700 μm long micro-cantilever showed a maximum displacement of 800 nm and a blocking force of 0.1 mN at an actuation voltage of 5 V, within experimental error of the theoretical predictions based on the known piezoelectric and elastic properties of the PZT film.