Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO₂. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10⁶ while the device mobility values were increased from 2.31 cm²/V s to 6.24 cm²/V s upon increasing the deposition temperature of the tin oxide films.     

Electrical-driven disaggregation of the two-dimensional assembly of colloidal polymer particles under pulse DC charging

Two-dimensional structures of polymer (polystyrene) colloidal particles were formed on a substrate by electrophoretic deposition in an aqueous suspension. The prepared suspension is stable for a few days; therefore, it was not necessary to place an additional mixing during the deposition process. The particle aggregation/disaggregation formation was observed on the metal surface in order to study the effect of pulse direct current (DC) charging in comparison with conventional DC charging. At the charging frequency of 80 Hz, it was observed that pulse DC charging with a maximum applied voltage of 3.3 V/cm (50% duty cycle) clearly reduced the degree of aggregation of particles having diameters of 50 and 300 nm comparing to those of DC charging. Pulse charging at high frequency is thus found to be more effective in preventing particle aggregation during electrophoretic deposition than conventional DC charging.     

Optical characterization of vacuum evaporated CdZnTe thin films deposited by a multilayer method

CdZnTe thin films of thickness 450–1400 nm have been evaporated under vacuum onto unheated glass substrates, using a multilayer method. During film deposition, the two evaporation sources, separated by two glass cylinders, were maintained at temperatures of 720 K for Zn and at 925–1200 K for CdTe, respectively. After deposition, the samples were annealed in air up to 775 K. The structural and optical properties of both as-deposited and heat-treated samples were investigated. Depending on the preparation conditions and the annealing temperature, the value of the optical band gap, E_g, of respective films varied between 1.16 and 1.63 eV. The obtained results are discussed in correlation with the structure of the films and the role of Zn atoms in CdTe films.     

Synthesis,structure, and optical properties of Au–TiO2 composite thin films

Titanium dioxide (TiO₂) films with varying concentrations of gold particles were synthesized using pulsed DC magnetron sputtering, with the intent to develop infrared reflecting films for use on cars and planes to reduce solar heat load. Under our deposition conditions, the films are smooth (RMS roughness on the order of 1.0–2.0 nm) and consist of rutile TiO₂ with embedded gold. The average gold particle diameter on the sample surface was found to change from 60 to 200 nm as the volume fraction of gold in the films increased from 1.9 to 4.3% (3.5 to 7.9 mol% Au). The maximum reflectance of these films in the infrared region (800–2500 nm) is > 50%, compared with 30% for pure TiO₂. The Maxwell–Garnett equation does not model the reflectance data very well, due to the relatively large gold particle size. Instead, by assuming that the contribution of gold particles to the reflectance response is proportional to their projected areal fraction in an effective medium approximation, we were able to fit the observed reflectance data quite well.     

A new approach towards the growth of cadmium sulphide thin film by CBD method and its characterization

Cadmium sulphide thin films were deposited by the chemical bath deposition method using tartaric acid as a complexing agent and annealed at different temperature in nitrogen atmosphere and characterized. The crystallographic structure and the crystallite size were studied by the X-ray diffraction (XRD) pattern. Transmittance of the deposited film is significantly higher in the visible region. The optical band-gap of deposited film is 2.4 eV and it decreases with increase in annealing temperature. Temperature dependence of resistivity confirmed the semiconducting behaviour of the film. Scanning electron micrographs (SEM) showed the presence of grain particles of size < 1 μm. X-ray photoelectron spectroscopy (XPS) studies supported the composition of cadmium sulphide thin film determined by EMPA and also indicated the presence of carbon and oxygen as impurity in the film.     

Preparation of nanocrystalline PbS thin films and effect of Sn doping and annealing on their structural and optical properties

Nanocrystalline PbS and Sn doped PbS thin films were successfully deposited on suitably cleaned glass substrate at constant room temperature, using the chemical bath deposition technique. Before, adding Sn doping content, the pure PbS thin films were deposited at room temperature for several dipping times to optimize the deposition time. After deposition, the films were also annealed at 400 °C for 1 h in air. The crystal structures of the films were determined by X-ray diffraction studies. The films were adherent to the substrate and well crystallized according to cubic structure with the preferential orientation (2 0 0). The crystallite size of the pure PbS thin films at optimized deposition time 30 min was found to be 40.4 nm, which increased with Sn content in pure PbS thin film. The surface roughness was measured by AFM studies. The band gaps of the films were determined by transmission spectra. Experiments showed that the growth parameters, doping and annealing, influenced the crystal structure, and optical properties of the films.     

Microstructure and magnetic properties of the FePt film on a membrane of anodized aluminum oxide

By making use of the dc magnetron sputtering system, the Au/FePt bilayers have been prepared on glass substrates and anodized aluminum oxide (AAO) membranes with an average pore diameter of around 200 nm. In both cases, the FePt films can be converted into the magnetically hard phase, namely L1₀ phase, after a heat treatment above 500 °C for 1 h. A nanoparticle-like structure can be observed in the 15-nm-thick FePt film on the AAO membrane. The experimental observations of the structure and the magnetism of the FePt films on the AAO membranes are firstly established.     

High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD

Very High Frequency (VHF) plasma enhanced chemical vapour deposition (PECVD) has been applied to hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN_x:H) films for thin film transistors (TFTs) fabrication. The effect of the excitation frequency on the deposition rate and the film quality of both films has been investigated. The films were prepared by VHF (30 MHz∼50 MHz) and HF (13.56 MHz) plasma enhanced CVD.High deposition rates were achieved in the low pressure region for both a-Si:H and a-SiN_x:H depositions by the use of VHF plasma. The maximum deposition rates were 180 nm/min for a-Si:H at 50 MHz and 340 nm/min for a-SiN_x:H at 40 MHz. For a-SiN_x:H films deposited in VHF plasma, the optical bandgap, the hydrogen content and the [Si–H]/[N–H] ratio remain almost constant regardless of an increase in deposition rate. The increase of film stress could be limited to a lower value even at a high deposition rate. The TFTs fabricated with VHF PECVD a-Si:H and a-SiN_x:H films showed applicable field effect mobility. It is concluded that VHF plasma is useful for high rate deposition of a-Si:H and a-SiN_x:H films for TFT LCD application.     

Modulations in structural and ferroelectric properties due to tensile strain in BiFeO3 films on MgAl2O4 substrates induced by thermal-expansion

The effect of tensile strain on structural and ferroelectric properties of BiFeO₃ epitaxial films was investigated. The films grown by pulsed laser deposition on MgAl₂O₄ (0 0 1) substrates revealed monoclinic structure deviated from the bulk rhombohedral structure due to a tensile strain along the in-plane direction. The strain is induced by the difference in thermal expansion coefficients between the film and the substrate. A Poisson ratio is calculated from the in-plain and out-of-plain lattice constants at different temperatures measured by reciprocal space maps of X-ray diffraction. The small Poisson ratio compared to the bulk suggests a weaker elastic response at high temperature. The ferroelectric polarization of the tensile-strained film along the (0 0 1) is also decreased from the bulk value.     

Synthesis of TiO2 thin films using single molecular precursors by MOCVD method for dye-sensitized solar cells application and study on film growth mechanism

For dye-sensitized solar cells application, in this study, we have synthesized TiO₂ thin films at deposition temperature in the range of 300–750 °C by metalorganic chemical vapor deposition (MOCVD) method. Titanium(IV) isopropoxide, {TIP, Ti(OⁱPr)₄} and Bis(dimethylamido)titanium diisopropoxide, {BTDIP, (Me₂N)₂Ti(OⁱPr)₂} were used as single source precursors that contain Ti and O atoms in the same molecule, respectively. Crack-free, highly oriented TiO₂ polycrystalline thin films with anatase phase were deposited on Si(1 0 0) with TIP at temperature as low as 450 °C. XRD and TED data showed that below 500 °C, the TiO₂ thin films were dominantly grown in the [2 1 1] direction on Si(1 0 0), whereas with increasing the deposition temperature to 700 °C, the main film growth direction was changed to [2 0 0]. Above 700 °C, however, rutile phase TiO₂ thin films have only been obtained. In the case of BTDIP, on the other hand, only amorphous film was grown on Si(1 0 0) below 450 °C while a highly oriented anatase TiO₂ film in the [2 0 0] direction was obtained at 500 °C. With further increasing deposition temperatures over 600 °C, the main film growth direction shows a sequential change from rutile [1 0 1] to rutile [4 0 0], indicating a possibility of getting single crystalline TiO₂ film with rutile phase. This means that the precursor together with deposition temperature can be one of important parameters to influence film growth direction, crystallinity as well as crystal structure. To investigate the CVD mechanism of both precursors in detail, temperature dependence of growth rate was also carried out, and we then obtained different activation energy of deposition to be 77.9 and 55.4 kJ/mol for TIP and BTDIP, respectively. Also, we are tested some TiO₂ film synthesized with BTDIP precursor to apply dye-sensitized solar cell.     

Low temperature charge transport and microwave absorption of carbon coated iron nanoparticles–polymer composite films

In this paper, the low temperature electrical conductivity and microwave absorption properties of carbon coated iron nanoparticles–polyvinyl chloride composite films are investigated for different filler fractions. The filler particles are prepared by the pyrolysis of ferrocene at 980 °C and embedded in polyvinyl chloride matrix. The high resolution transmission electron micrographs of the filler material have shown a 5 nm thin layer graphitic carbon covering over iron particles. The room temperature electrical conductivity of the composite film changes by 10 orders of magnitude with the increase of filler concentration. A percolation threshold of 2.2 and an electromagnetic interference shielding efficiency (EMI SE) of ～18.6 dB in 26.5–40 GHz range are observed for 50 wt% loading. The charge transport follows three dimensional variable range hopping conduction.     

Electrical and dielectric behaviors of composite CoFe2O4–BaTiO3 thick films

Composite (x)CoFe₂O₄–(1 ? x)BaTiO₃ thick films were prepared on alumina substrate by electrophoretic deposition technique using CoFe₂O₄ and BaTiO₃ nanopowders. X-ray diffraction indicated that the films consisted of both spinel CoFe₂O₄ and perovskite BaTiO₃ phase. Microstructures of the deposited films were examined using SEM technique. Electrical and dielectric properties of the thick films were investigated. At CoFe₂O₄ concentration of 55%, the composite thick film showed an abrupt rise in dc conductivity, which was attributed to percolation effect.     

Wavelet packet analysis of particle response to turbulent fluctuation

The fluid–particle synchronous measurements in a boundary layer wind tunnel were conducted to determine the particle concentration response to turbulent velocity fluctuation. Three groups of natural sand samples (diameter of 300–500, 100–125 and 63–80 μm) were employed in the experiments. Consecutive instants of saltating particles were recorded by using a high-speed digital camera at 2000 frames per second and a constant-temperature hot-wire anemometer was used to measure the turbulent fluctuation simultaneously. The particle concentration in the saltation layer was calculated by the dynamic-threshold binarization algorithm. The results confirm that the concentration fluctuation is a fairly typical stochastic process, and the low-frequency variation of particle concentration is closely related to the turbulent fluctuation. Moreover, a method was developed to apply wavelet packet transform to two-phase data analysis from the viewpoint of frequency-domain energy structure. Further analysis shows that the concentration fluctuation is predominant in the low frequency band less than 250 Hz. In addition, the particle concentration response to the turbulent fluctuation is significantly correlated with the particle diameter. For the fine particles (63–80 μm), medium particles (100–125 μm) and coarse particles (300–500 μm), the highest response frequencies of particle concentration variation to the turbulent fluctuation are 60, 40 and 30 Hz, respectively, which demonstrates that an appropriate sampling rate is crucial in saltation measurement. These qualitative and quantitative results are beneficial to understand the fluid–particle interaction mechanism.     

Enhancement of photosensitivity by annealing in Bi2S3 thin films grown using SILAR method

Bi₂S₃ thin films were grown by successive ionic layer adsorption and reaction method (SILAR) onto the glass substrates at room temperature. The as prepared thin film were annealed at 250 °C in air for 30 min. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrical measurement systems. The X-ray diffraction patterns reveal that Bi₂S₃ thin film have orthorhombic crystal structure. SEM images showed uniform deposition of the material over the entire glass substrate. The optical energy band gap observed to be decreased from 1.69 to 1.62 eV for as deposited and annealed films respectively. The I–V measurement under dark and illumination condition (100 W) show annealed Bi₂S₃ thin film gives good photoresponse as compared to as deposited thin film and Bi₂S₃ thin film exhibits photoconductivity phenomena suggesting its useful in sensors device. The thermo-emf measurements of Bi₂S₃ thin films revealed n-type electrical conductivity.     

An investigation of the effect of SiC particle size on Cu–SiC composites

In this study mechanical properties of copper were enhanced by adding 1 wt.%, 2 wt.%, 3 wt.% and 5 wt.% SiC particles into the matrix. SiC particles of having 1 μm, 5 μm and 30 μm sizes were used as reinforcement. Composite samples were produced by powder metallurgy method and sintering was performed in an open atmospheric furnace at 700 °C for 2 h. Optical and SEM studies showed that the distribution of the reinforced particle was uniform. XRD analysis indicated that the dominant components in the sintered composites were Cu and SiC. Relative density and electrical conductivity of the composites decreased with increasing the amount of SiC and increased with increasing SiC particle size. Hardness of the composites increased with both amount and the particle size of SiC particles. A maximum relative density of 98% and electrical conductivity of 96% IACS were obtained for Cu–1 wt.% SiC with 30 μm particle size.     

Assembly of ordered ZnO porous thin films by cooperative assembly method using polystyrene spheres and ultrafine ZnO particles

Ordered ZnO porous thin films were fabricated by cooperative assembly method using polystyrene sphere (PS) and ultrafine ZnO particles, in which ultrafine ZnO particles were directly assembled in the voids of PS while the template was being assembled by capillary forces. The influence of experimental parameters, such as evaporation temperature, ZnO concentration and the concentration ratio of PS/ZnO on morphology of the porous structure was mainly studied. The results showed that an ordered porous structure could be obtained by this method. X-ray diffraction (XRD) spectra indicated the porous ZnO thin film was wurtzite structure. The transmissivity decreased with the decrease of wavelength, but still kept above 80% beyond the wavelength of 550 nm. Optical band gap of the ZnO thin film was 3.13 eV.     

Preparation of aluminum foil-supported nano-sized ZnO thin films and its photocatalytic degradation to phenol under visible light irradiation

The zinc oxide thin films on aluminum foil have been successfully prepared by sol–gel method with methyl glycol as solvent. The film was characterized by means of XRD, TG, UV–vis, SEM and AFM, which show that the ZnO/Al film is formed by a layer of ZnO nano-sized particles with average diameter of 52.2 nm. Under the initial concentration of 20 mg/L phenol solution (500 mL) and visible light irradiation time of 3 h, more than 40% of the initial phenol was totally mineralized using two pieces of ZnO/Al thin film as photocatalyst with an efficient irradiation area of 400 cm². It is a promising visible light responded photocatalyst for the activation of O₂ at room temperature to degrade organic pollutants.     

Titanium oxide thin films synthesis by pulsed – DC magnetron sputtering

Titanium oxide thin films (1–4 μm) were deposited on the porous Hastelloy-X substrates using the pulsed – DC magnetron sputtering technique and characterized by X–ray diffraction (XRD) and scanning electron microscopy (SEM) methods. Firstly, the films were deposited at different distances between the magnetron and the substrate, as magnetron current and pressure in the deposition chamber were constant. The distance between the magnetron and the substrate was changed from 3 cm to 7 cm, and the deposition rate varied between 10.1 nm/min to 6.0 nm/min. Secondly, pressure influence for the deposition rate was investigated. The deposition rate decreased nearly 15% with the decrease of oxygen pressure from 1.3 to 6.0 Pa. Finally, the influence of the bias (applied to the substrate for the increase of deposition rate) on thin films phase and microstructure was investigated.The experimental results showed that formation of pure titanium oxide thin films was observed in all experimental cases. Only crystallite sizes and orientation were changed. The results showed that there is a possibility to change porosity and uniformity of the growing film by changing oxygen partial pressure during deposition or bias application to the substrate. The existence of columnar boundaries and nanocrystalline structure in the films was observed.     

Morphology dependent electrochemical performance of sputter deposited Sn thin films

This study deals with tailoring of the surface morphology, microstructure, and electrochemical properties of Sn thin films deposited by magnetron sputtering with different deposition rates. Scanning electron microscopy and atomic force microscopy are used to characterize the film surface morphology. Electrochemical properties of Sn thin film are measured and compared by cyclic voltammetry and charge–discharge cycle data at a constant current density. Sn thin film fabricated with a higher deposition rate exhibited an initial discharge capacity of 798 mAh g^?1 but reduced to 94 mAh g^?1 at 30th cycle. Film deposited with lower deposition rate delivered 770 mAh g^?1 during 1st cycle with improved capacity retention of 521 mAh g^?1 on 30th cycle. Comparison of electrochemical performances of these films has revealed important distinctions, which are associated with the surface morphology and hence on rate of deposition.     

Tuning exchange bias in epitaxial Ni/MgO/TiN heterostructures integrated on Si(1 0 0)

Epitaxial Ni thin films are integrated with tunneling barrier MgO on Si(1 0 0) substrate. During pulsed laser deposition, early island-like structure transformed into uniform thin film with increasing number of laser pulses. This led to transitions in exchange bias from positive to negative and back to positive, which is ascribed to morphology associated residual strain. The Ni island structure has a coercive field as high as 3 times of that of the continuous film. The current work holds a tremendous promise in the realization of magnetic devices integrated with the Si-platform.