Aromatic polyureas: a new class of nonlinear optical polymer with large second-harmonic generation

The second-order nonlinear optical properties of aromatic polyureas are reported. From Maker fringe measurements, the nonlinear d/sub 33/ coefficient of poled polyurea films with and without pendant chromophores was found to be 20*10/sup -9/ esu and 12*10/sup -9/ esu, respectively, at 1.064 mu m. Aromatic polyurea having no pendant chromophores shows a cutoff wavelength of transmission at 307 nm which is the first example of organic NLO materials to be optically transparent at such low wavelengths.<>     

高阶-复Ginzburg-Landau方程的精确孤波解

高阶-复Ginzburg-Landau方程(HCGLE)作为描述光脉冲存光纤中传输的非线性偏微分方程之一很长时间以来都是非线性光学专业研究的主要课题，利用三角函数展开法对该方程做了精确求解，得出满足不同参数条件下的一系列孤波解，在光通信领域有很大的潜在研究和应用价值。     

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

The self-phase modulation coefficient /spl gamma/ of 1310 nm multiple-quantum-well (MQW) semiconductor optical amplifiers has been investigated. It is found to vary from 16/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for low driving conditions to 3/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for high-driving conditions. This implies that the amount of self-phase modulation occurring in the amplifier is between 1.5-10/spl times/ more than that occurring in the optical fiber following the amplifier. The additional self-phase modulation caused by the semiconductor optical amplifier may be used to achieve compensation for fiber dispersion in optical communication systems at significantly lower average power levels. The linewidth enhancement factor /spl alpha//sub H/ was found to increase from a value of 2 at low driving conditions, in agreement with results reported for MQW lasers, to a value of 3 at high-driving conditions.     

Recombination constants and alpha factor in 1.5 mu m MQW optical amplifiers taking carrier overflow into account

Recombination constants, carrier lifetime, linewidth enhancement factor and related parameters are examined experimentally and theoretically for MQW semiconductor optical amplifiers. The theoretical model which takes carrier overflow into account predicts a band-to-band recombination constant of B=10/sup -10/ m/sup 6//s and an Auger recombination constant of C=15*10/sup -29/ m/sup 6//s which is higher than previously reported for MQW devices. Furthermore, linewidth enhancement factors up to 30 are measured.<>     

Propagation of electromagnetic TE waves in a nonlinear medium with saturation

Propagation of electromagnetic TE waves in a nonlinear dielectric layer with saturation is considered. The layer is located between two isotropic nonmagnetic semi-infinite media with constant electromagnetic parameters. A nonlinear boundary-value problem for the eigenvalues of a second-order ordinary differential equation is studied. The dispersion equation for the eigenvalues of the problem (propagation constants) is derived. Dispersion curves are calculated.     

Linearly Single Polarization Fibers with Zero Polarization Mode Dispersion

The optimum waveguide structure for linearly single polarization fibers, which satisfies the large modal birefringence and the zero polarization mode dispersion simultaneously, has been investigated. The basic waveguide structure is the single-mode optical fiber that has an elliptical core and stress-applying parts with a different expansion coefficient from that of the cladding. Waveguide parameters, such as index difference, core ellipticity, and cutoff wavelength, are first determined to obtain highly birefringent fibers with B = 1 X 10/sup -5/ or B = 5 X 10/sup -5/. The structure of the stress-applying parts that provides zero polarization mode dispersion is then determined.     

Full characterization of packaged Er-Yb-codoped phosphate glass waveguides

We present a procedure for the characterization of packaged Er-Yb-codoped phosphate glass waveguides. The procedure is based on precise measurements of the output optical powers when the waveguide is diode-laser pumped at 980 nm. The dependence of these optical powers on the input pump power is then fitted to the results from a numerical model that describes in detail the propagation of the optical powers inside the waveguide. The best fit is obtained for the following parameters: the signal wavelength scattering losses are /spl alpha/(1534)=8.3/spl times/10/sup -2/ dB/cm, the Yb/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 5.4/spl times/10/sup -25/ m/sup 2/ and 7.0/spl times/10/sup -25/ m/sup 2/, the Er/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 1.6/spl times/10/sup -25/ m/sup 2/ and 1.2/spl times/10/sup -25/ m/sup 2/, the Yb/sup 3+/--Er/sup 3+/ energy-transfer coefficient is 1.8/spl times/10/sup -23/ m/sup 3//s and the cooperative-upconversion coefficient is 8/spl times/10/sup -25/ m/sup 3//s. An approximate method is introduced that allows the determination of the absorption and emission cross section distributions for the erbium /sup 4/I/sub 13/2//spl hArr//sup 4/I/sub 15/2/ transition from the amplified spontaneous emission power spectrum.     

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

The potential of 1.3-/spl mu/m AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20/spl deg/C-100/spl deg/C temperature range indicate a localized T/sub 0/ value of 68 K at 98/spl deg/C for a device with a 2.8 /spl mu/m ridge width and 700-/spl mu/m cavity length. The transparency current density is measured for temperatures from 20/spl deg/C to 60/spl deg/C and found to increase at a rate of 7.7 A/spl middot/cm/sup -2//spl middot/ /spl deg/C/sup -1/. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3/spl times/10/sup -4/ A/sup -1//spl middot//spl deg/C/sup -1/. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular ( A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20/spl deg/C-80/spl deg/C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems.     

Inverse Scattering Transform for Soliton Transmission Analysis

In soliton system design studies, many important properties pertaining to the propagation of optical pulses in a transmission fiber can be investigated using the results of inverse scattering theory. Although the theory is well established, it is highly intricate and its application is therefore restricted to specialists working in the field. The purpose of this communication is first to clarify the method by reviewing the derivation of the inverse scattering transform for the scalar nonlinear Schrödinger equation in the anomalous dispersion regime. Second, having obtained the inverse scattering formulae, methods are presented to solve numerically both the direct and inverse scattering problems for arbitrary pulse trains. The techniques presented, which to the author's knowledge are new, enable the soliton and dispersive components of the signal to be resolved at any point along the fiber and reveal the interaction of the soliton and dispersive components of the signal.     

Design of a transversal equalizer for electronic dispersion compensation in optical communication links

A programmable transversal equalizer for electronic dispersion compensation(EDC) in optical fiber communication systems is developed.Based on the SiGe technology with a cut-off frequency of 80 GHz,the equalizer consists of 6 seriesparallel amplifiers as delay units and 7 Gilbert variable gain amplifiers as taps,which ensure that the equalizer can work at the bit rate of 10 Gb/s.With different tap gains,the forward voltage gain of the transversal equalizer varies,which demonstrates that the equalizer has various filtering characteristics such as low pass filtering,band pass filtering,band reject filtering,and notch filtering,so it can effectively simulate the inverse transfer function of dispersive channels in optical communications,and can be used for compensating the inter-symbol interference and other nonlinear problems caused by dispersion.The equalizer(including pads) occupies an area of 0.40 mm × 1.08 mm,and its total power dissipation is 400 mW with 3.3 V power supply.     

Investigating nonlinear femtosecond pulse propagation withfrequency-resolved optical gating

Frequency-resolved optical gating (FROG) is used to investigate nonlinear pulse propagation in normally dispersive media. We present high-dynamic-range measurements of broad-bandwidth femtosecond pulses that result from nonlinear propagation in fused silica and compare these measurements with a (3+1)-dimensional modified nonlinear Schrodinger equation. We also demonstrate the ability of FROG to provide information about a noninstantaneous nonlinearity in methanol. In this case, the instantaneous nonlinear index and the time response of the noninstantaneous nonlinearity are used as fit parameters in a (1+1)-dimensional model     

Fabry-Perot electroabsorption modulators for high-speed free-space optical communication

Retroreflective modulators are key components in free-space optical communication systems between mobile platforms and users. Wide-aperture surface-normal electroabsorption modulators based on GaAs-AlGaAs quantum wells embedded in an asymmetric Fabry-Perot cavity are designed and fabricated with a high yield process on 10-cm wafers. It is shown that the modulator yield and its speed are improved significantly by a pixellated approach in which monolithic modulators are divided into 4-64 pixels. The fabricated 1.5/spl times/1.5 cm/sup 2/ devices exhibit contrast ratios of 8 dB at a driving voltage of 8 V and a modulation frequency higher than 10 MHz, which provides low noise and fast data transmission for long distance free-space optical communication.     

Optimized second-harmonic generation in quantum cascade lasers

Optimized second-harmonic generation (SHG) in quantum cascade (QC) lasers with specially designed active regions is reported. Nonlinear optical cascades of resonantly coupled intersubband transitions with giant second-order nonlinearities were integrated with each QC-laser active region. QC lasers with three-coupled quantum-well (QW) active regions showed up to 2 /spl mu/W of SHG light at 3.75 /spl mu/m wavelength at a fundamental peak power and wavelength of 1 W and 7.5 /spl mu/m, respectively. These lasers resulted in an external linear-to-nonlinear conversion efficiency of up to 1 /spl mu/W/W/sup 2/. An improved 2-QW active region design at fundamental and SHG wavelengths of 9.1 and 4.55 /spl mu/m, respectively, resulted in a 100-fold improved external linear-to-nonlinear power conversion efficiency, i.e. up to 100 /spl mu/W/W/sup 2/. Full theoretical treatment of nonlinear light generation in QC lasers is given, and excellent agreement with the experimental results is obtained. For the best structure, a second-order nonlinear susceptibility of 4.7/spl times/10/sup -5/ esu (2/spl times/10/sup 4/pm/V) is calculated, about two orders of magnitude above conventional nonlinear optical materials and bulk III-V semiconductors.     

Phase and amplitude measurements for high bandwidth optical signals

In this paper a novel technique for obtaining the amplitude and phase of optical pulses with time extents as short as tens of ps is presented. The method which is based on the transport-of-intensity equation only requires, for a practical realization, of passive fiber optic devices. It employs as the main component a dispersive element with a known second order dispersion coefficient. Two different setup implementations are considered, for which simulations are carried out in order to test the method performance taking into account both, realizable models of the involved devices and typical pulses found in optical transmission systems. The characterization of optical pulses affected by dispersion and nonlinear effects, such as self-phase modulation, is used to evaluate the performance of the method and show the practical feasibility of the future implementation.     

偏振模色散的分析模型

当光纤通信系统单信道速率到40Gbit/s以上时，偏振模色散的影响已经成为严重影响系统性能的主要因素。对偏振模色散现象的研究通常可采用几种不同的分析模型：琼斯矩阵、斯托克斯空间、耦合非线性薛定谔方程；对这几种分析模型作了详细地介绍，进行了分析和比较，并对40Gbit／s光纤传输系统进行了数值模拟。     

Analog performance of an ultrafast sampled-time all-optical fiber XPM wavelength converter

Analog performance of an all-optical ultrafast wavelength converter is measured and reported for the first time. The wavelength-conversion process is based on nonlinear cross-phase modulation in an optical fiber combined with an optical filter to convert phase modulation to amplitude modulation. The spurious-free dynamic range (SFDR) of the converter is measured to be 82 dB/spl middot/Hz/sup 2/3/. We define a new metric called the SFDR power penalty, which measures the degradation in SFDR relative to baseline the back-to-back analog optical link. The SFDR power penalty was measured to be 5 dB/spl middot/Hz/sup 2/3/ and is shown to be a function of the input optical power. This metric is used to characterize the linear region of the optical wavelength converter.     

Theoretical Discussion of Couple-Mode Using Chirped Fiber Grating for Dispersion Compensation

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Antimonide semiconductor saturable absorber for passive mode locking of a 1.5-/spl mu/m Er : Yb : glass laser at 10 GHz

We demonstrate the first antimonide (AlGaAsSb) semiconductor saturable absorber mirror (SESAM) for stable passive mode locking of an Er : Yb : glass laser at 10 GHz and a center wavelength of 1535 nm generating 4.7-ps pulses. The nearly resonant SESAM is InP-based, grown by metal-organic vapor phase epitaxy and optimized for high pulse repetition rates. We fully characterized the linear and nonlinear optical parameters: The saturation fluence is 80 /spl mu/J/cm/sup 2/, the modulation depth is 0.4% and the nonsaturable losses are 0.35%. A 1/e decay time of 95 ps is achieved after wet chemical etching of the 10-nm InP cap on top of the absorber.     

A LiÉnard Oscillator Resonant Tunnelling Diode-Laser Diode Hybrid Integrated Circuit: Model and Experiment

We report on a hybrid optoelectronic integrated circuit based on a resonant tunnelling diode driving an optical communications laser diode. This circuit can act as a voltage controlled oscillator with optical and electrical outputs. We show that the oscillator operation can be described by LiÉnard's equation, a second order nonlinear differential equation, which is a generalization of the Van der Pol equation. This treatment gives considerable insight into the potential of a monolithic version of the circuit for optical communication functions including clock recovery and chaotic source applications.      

A high-speed 850-nm optical receiver front-end in 0.18-/spl mu/m CMOS

A high-speed optical interface circuit for 850-nm optical communication is presented. Photodetector, transimpedance amplifier (TIA), and post-amplifier are integrated in a standard 0.18-/spl mu/m 1.8-V CMOS technology. To eliminate the slow substrate carriers, a differential n-well diode topology is used. Device simulations clarify the speed advantage of the proposed diode topology compared to other topologies, but also demonstrate the speed-responsivity tradeoff. Due to the lower responsivity, a very sensitive transimpedance amplifier is needed. At 500 Mb/s, an input power of -8 dBm is sufficient to have a bit error rate of 3/spl middot/10/sup -10/. Next, the design of a broadband post-amplifier is discussed. The small-signal frequency dependent gain of the traditional and modified Cherry-Hooper stage is analyzed. To achieve broadband operation in the output buffer, so-called "f/sub T/ doublers" are used. For a differential 10 mV/sub pp/ 2/sup 31/-1 pseudo random bit sequence, a bit error rate of 5/spl middot/10/sup -12/ at 3.5 Gb/s has been measured. At lower bit-rates, the bit error rate is even lower: a 1-Gb/s 10-mV/sub pp/ input signal results in a bit error rate of 7/spl middot/10/sup -14/. The TIA consumes 17mW, while the post-amplifier circuit consumes 34 mW.