TD-LTE网络2天线和8天线性能对比研究

多天线技术（MIMO）是TD-LTE系统的核心技术之一,能够在不增加频谱带宽和天线发射功率的情况下,大幅提高信道容量、频谱利用率和数据的传输质量。文章对比分析了TD-LTE网络中2/8天线性能、建网成本和施工难度的差异,给出了各场景应用建议。     

MIMO-OFDM下一代无线局域网技术研究

MIMO-OFDM是下一代高速无线局域网标准IEEE 802.11n的核心技术。将MIMO技术和OFDM技术结合是无线通信领域智能天线技术的重大突破。MIMO技术能够在空间中产生独立的并行信道同时传输多路数据流,有效地提高了系统的传输速率;而OFDM技术具有优越的抗多径能力和频谱利用率,将两者结合能有效地解决无线通信中带宽效率和多径衰落的问题。在介绍MIMO和OFDM技术的基础上,着重讨论了其在应用中的关键技术。     

基于内点罚函数的全双工认知无线电网络优化

针对全双工认知无线电网络中频谱利用率不高的问题,文中提出一种通过优化频谱感知中能量检测阈值来提升系统频谱利用率的方法。为了获得最优频谱利用率下的能量检测阈值,建立马尔科夫状态转移模型得到全双工认知无线电单位带宽吞吐量,将频谱利用率问题转化为以单位带宽吞吐量为目标函数、以检测概率为约束条件的多约束非线性规划问题。然后,采用内点罚函数法,以单位带宽吞吐量和约束条件构造增广目标函数,将多约束非线性规划问题转化为无约束问题,通过搜索可行域内部一系列的罚因子,求解罚函数的极值点,从而逼近最优频谱利用率下的能量检测阈值。仿真结果表明,在次级用户处于高传输功率和低信噪比时,优化能量检测阈值后的认知无线电网络单位带宽吞吐量有明显提升。     

MIMO-OFDM技术

多进多出(MIMO)系统在发射端和接收端分别设置多副发射天线和接收天线,采用MIMO技术可以提高信道容量和信道可靠性,降低误码率。正交频分复用(OFDM)是一种特殊的多载波传输方案,各子载波在整个符号周期上正交,各子载波信号频谱可以互相重叠,子载波正交复用技术大大减少了保护带宽,提高了频带利用率。MIMO-OFDM技术是OFDM与MIMO技术结合形成的一种新技术,该技术是在OFDM传输系统中采用阵列天线实现空间分集,提高了信号质量。MIMO-OFDM技术将成为下一代移动通信核心技术的解决方案。文中全面介绍了MIMO技术和OFDM技术及两者的结合,分析了实现MIMO-OFDM技术的关键,展望了发展前景。     

空时分组码在自适应调制编码系统中的性能分析

0引言 移动通信频谱资源的有限性决定了未来移动通信必须采用频谱利用率高的抗衰落技术来提高系统的性能,从而支持高速率数据和多媒体业务的传输。在无线衰落信道中,利用多天线阵列的空时分组编码技术把编码、调制和空间分集结合起来,能很好地提高频谱利用率。     

TD-LTE多用户双流波束赋型技术分析和评估——中国移动通信集团公司研究院无线系统研究员金婧演讲(摘录)

频谱资源的严重不足已经日益成为移动通信网络进一步发展的瓶颈,多天线技术可在不增加带宽的情况下有效提高传输效率和频谱利用率,因而获得广泛的青睐。1多用户双流波束赋型技术原理3GPP Rel-9定义的传输模式8(TM8),将无需用户反馈码本的单流波束赋型扩展到单双流自适应波束赋型方案。根据调度用户的情况不同,TM8双流波束赋     

应用于WLAN中MIMO OFDM技术的性能分析

网络是现代信息技术的基础,无可讳言,宽带化和无线化是网络技术发展的两大趋势。MIMO技术的应用,很大程度地提高了信道容量和信道的可靠性。采用OFDM技术使各个子载波信号频谱可以重叠,减少了保护带宽,从而提高了频带利用率。MIMOOFDM技术是在OFDM传输系统中采用阵列的天线实现空间分集的一种新技术,它们的结合使得高速率、大容量的WLAN通信成为可能。最后,通过对MIMOOFDM系统的理论分析和仿真证实,好的空时码可以较理想地提高信道容量。     

MIMO原理及其在移动通信中的应用

多入多出（MIMO）或多发多收天线（MTMRA）技术,是无线移动通信领域智能天线技术的重大突破,该技术能在不增加带宽的情况下,成倍地提高通信系统的容量和频谱利用率,是新一代移动通信系统采用的关键技术.     

LTE-A关键技术及标准化进展分析

LTE-A是LTE技术的平滑演进,引入了多载波聚合、中继、协作多点传输等关键技术。其中,多载波聚合是在频域上进行扩展,以满足LTE-A对高带宽的需求;中继技术能带来更广的覆盖范围和更高的系统容量,同时也面临干扰复杂化问题;协作多点传输技术能提高小区边缘的吞吐量;多天线技术通过增加上下行天线端口的数量,来提高峰值速率和频谱效率。     

WiMAX系统的载波聚合技术

采用正交频分复用技术的WiMAX系统,能够显著提高频谱利用率。为了支持更高的数据速率,需要扩展传输带宽。载波聚合技术通过将多个成员载波连接在一起,能够提供更大的传输带宽。本文针对230 MHz的WiMAX系统,在对频谱使用情况进行测试的基础上,采用连续载波聚合方法,扩展传输带宽。相比离散载波聚合方法,连续载波聚合方法具有更低的系统复杂度,便于实际应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.