玉米秸秆还田时间和还田方式对土壤肥力和作物产量的影响

采用微区和田间两种长期定位试验(12年),探讨了玉米秸秆不同还田时间和还田方式对土壤的培肥作用和对作物产量的影响。研究结果表明,玉米秸秆的还田时间以秋天直接还田并配以适量的微生物快腐剂为好,春天施用腐熟的玉米秸秆不但费工费力,而且对土壤肥力和作物产量没有明显的提高作用;玉米秸秆不同还田方式对土壤肥力和作物产量的影响程度不明显,因此生产上应根据因地制宜的原则,确定适合的还田方式。     

秸秆还田对西藏中部退化农田土壤水分的影响

对西藏中部退化农田进行秸秆还田后的土壤水分效应以及土壤水分与土壤有机质、土壤速效养分的关系进行了探讨,初步结果表明,在西藏高原干旱、半干旱条件下,秸秆直接还田,特别是高茬和秸秆覆盖由于使土壤表层环境得以较好保护,对遏制土壤风蚀、减少土壤水分蒸发具有重要作用。同时,由于土壤水分对土壤环境、土壤过程的深刻影响,土壤有机质、碱解氮、速效钾含量均随之提高,土壤速效磷含量则与土壤含水量呈微弱负相关。     

秸秆深层覆盖对土壤水盐运移及小麦生长的影响

通过对秸秆不同覆盖方式的土柱模拟实验研究表明,秸秆深层覆盖在土壤中形成了一个毛细管障碍层,破坏了土壤毛细管的连续性,明显降低深层土壤水分蒸发,减少了深层土壤盐分向表层的运移;秸秆表层覆盖使土表与空气的接触面变小,利于土壤保水。深层秸秆结合表层秸秆覆盖对土壤的保水效果最好,而且抑制盐分的土壤表聚,减轻土壤盐分对作物生长的胁迫,降低土壤耕层的返盐,保证了作物正常生长。     

我国主要农区秸秆还田试验总结

本文是 1999年全国 19个省市 10 7份秸秆还田的试验材料的归纳和总结。介绍了我国各主要农区的气候、作物、种植制度、秸秆还田的方法及秸秆还田的增产、改土培肥效果 ,反映了我国各主要农区的秸秆还田现状 ,可为各地的秸秆还田提供参考     

不同促腐条件下秸秆直接还田对土壤酶活性动态变化的影响

通过两年田间定位试验,研究了冀东地区不同促腐条件下玉米秸秆连续直接还田对土壤酶活性动态变化的影响。结果表明,在小麦各生育期,还田处理总体酶活性均高于单施化肥处理;还田处理中,配施促腐剂处理表现出高于未配施处理的趋势。不同促腐条件下,秸秆直接还田对土壤过氧化氢酶和转化酶活性在小麦各生育期分布态势的影响没有差异,但影响了土壤脲酶和磷酸酶活性在小麦各生育期的分布态势,配施促腐剂使土壤脲酶和磷酸酶活性高峰期出现的时间提前。     

不同促腐条件下秸秆直接还田对土壤养分时空动态变化的影响

通过两年田间定位试验,研究了冀东地区玉米秸秆连续直接还田对土壤氮素和磷素养分时空动态变化的影响。结果表明,玉米秸秆直接还田可明显提高土壤氮素和磷素供应水平。在调节秸秆C/N15∶1~35∶1范围内,调节秸秆不同C/N未改变秸秆还田后的转化进程,其转化对土壤氮素和磷素时空动态变化的影响亦无明显差异。在调节秸秆C/N的前提下配施促腐剂,使秸秆还田后的转化进程明显加快。     

秸秆覆盖对盐渍土水分状况影响的模拟研究

用三种质地、三种盐化程度的土壤为试材进行试验。结果表明,覆盖秸秆可明显降低土壤水分蒸发,与不覆盖相比,覆盖1.5t/hm     

地面覆盖对盐渍土水热盐运动及作物生长的影响

利用田间小区试验研究了山东省莱州半干旱海水入侵地区不同覆盖措施对土壤水盐热运动及作物生长的影响,试验结果表明,①塑膜覆盖对盐渍土有很好的保温增温效果和一定的保水抑盐作用;②秸秆覆盖能拦蓄雨水、减少地面径流和地表蒸发,对盐渍土有非常明显的保持土壤水分、抑制地表返盐、促进降雨淋盐的作用,且其作用随覆盖厚度的增加而增强,③秸秆覆盖的隔热性及其对土壤热容量的提高,缓和了土壤温度的日变化;④5cm厚秸秆覆盖的土壤含盐量变化幅度较小,说明秸秆覆盖提高了土壤对盐分的缓冲性;⑤随着油葵的生长,增加了地面的植被覆盖度,削弱了覆盖措施对土壤水盐热运动的影响;⑥5cm秸秆覆盖下的油葵生长状况及其产量均优于其他处理。由此可见,秸秆覆盖是改良利用盐渍土非常有效的一项措施。     

宁夏南部山区秸秆覆盖对春玉米水分利用及产量的影响

为研究秸秆覆盖在宁南山区对春玉米生长及其土壤水分的影响,在宁夏彭阳县对三种不同秸秆覆盖处理方式进行了试验研究。对比分析了不同覆盖措施下春玉米的生长状况、产量及水分利用效率变化的关系。结果表明:采用秸秆覆盖方式可使春玉米的株高、穗位高、穗长、生物产量及经济产量等指标得到显著提高,土壤的蓄水保墒性能增强,水分利用效率提高,增产增效明显;与传统方式相比,整秸秆覆盖可使春玉米的产量及水分利用效率分别提高3.5%及16.5%。     

Evaluation of photoresponse in solution-processable ZnO thin film transistor for radiative sensor applications

Thin film transistor based on the spin-cast ZnO channel layer was fabricated with SiO₂ dielectric layer on Si substrate. The ZnO active layer grown by sol-gel spin-cast caused an increase in the field-effect mobility compared to those of the ZnO TFTs with the channel layer grown by zinc acetate precursor. Under light illumination, the ZnO-TFT in turn-off state exhibited a high drain current, which is 12.82 times higher than dark drain current, whereas in turn-on state is 9.43 times. The photosensing behavior of thin film transistor based on the spin-cast ZnO channel layer indicated more pronounced under a depletion region of 0 V gate bias. The obtained results indicate that the ZnO layer spin coated on SiO₂ gate layer can be an effective and promising way to increase factor for improving the device performance and for light detecting of ZnO thin film transistor and the studied thin film phototransistor can be used in optoelectronic applications.     

Analysis of configuration of surface-immobilized proteins by Si nanochannel field effect transistor biosensor

We demonstrate the application of ‘top-down’ fabricated Si nanochannel field effect transistor biosensors for measuring charging properties or configuration of proteins immobilized on the Si surface. We have immobilized monoclonal antibodies for prostate specific antigen (anti-PSA) on the p-type Si channel surface, and monitored the channel conductance in response to the variation of ionic strength (salt concentration) and pH of the buffer solution. Effects of the salt concentration at a constant pH is consistent with the screening of protein charges by dissolved counter-ions, enabling analysis of the net protein charge and spatial configuration based on calculated values of Debye screening length (λ_D). The pH-dependence of channel conductance at varying salt concentration has also been investigated, from which the relationship between the pH and net protein charge can be estimated.     

Ionic current rectification in a conical nanofluidic field effect transistor

A conical nanofluidic field effect transistor (FET) refers to a conical nanopore embedded with an electrically controllable gate electrode. The surface potential of the nanopore can be effectively regulated by manipulating the gate potential applied to the gate electrode, which in turn controls the ionic current through the nanopore. The field effect on the ionic current rectification (ICR) in the conical nanofluidic FET is comprehensively investigated using a continuum model, composed of Nernst-Planck equations for the ionic concentrations, Poisson equation for the electric potential, and Navier-Stokes equations for the flow field. Under the conditions of a low ionic concentration, a low surface charge density of the nanopore, and a high permittivity of the dielectric nanopore, regulation of ICR by FET is significant. The field effect on the ICR with the gate electrode located in the middle region is opposite to that with the gate electrode located near the tip of the nanopore.     

Photoshop完美图像色阶推算

随着Photoshop的逐渐发展和普及．出现了许多优秀的电脑艺术设计师和电脑艺术作品。多教人对于Photoshop的了解仅限于“一个很好的图像编辑软件”。实际上．Photoshop的应用领域很广泛的．在图像、图形、文字、视频、出版等各方面都有涉及。     

A high-density multi-point LAPS set-up using a VCSEL array and FPGA control

A new LAPS (light-addressable potentiometric sensor) set-up will be introduced, in which the light sources are miniaturised by the utilisation of a VCSEL (vertical-cavity surface-emitting laser) array to increase the measurement spot density. An FPGA (field-programmable gate array) is used to generate modulation signals for individual illumination of each measurement spot of the LAPS. The new set-up can operate a large number of measurement spots simultaneously by reading out the sum photocurrent and separate the signals of the individual measurement spots by an FFT analysis. The frequency, amplitude and offset of the modulation signal can be configured for each measurement spot by software. The new system can be combined with a positioning stage allowing the parallel read out of a single line of measurement spots and a scan perpendicular to that line in a similar manner, like for an optical scanner set-up. First measurements demonstrate the functionality of the new LAPS set-up as a chemical imaging system.     

土壤中可溶性有机氮含量及其影响因素研究

研究了农田和日光温室2个生态系统土壤中可溶性有机氮(SON)的含量及施肥和栽培模式对其含量的影响。结果表明,农田和日光温室土壤中SON的含量平均分别为39.19 mg kg-1和320.16 mg kg-1,分别占可溶性总氮(TSN)的80%和73%,说明SON是土壤氮素中不可忽视的氮素组分。不同栽培模式对土壤中SON的含量及其占TSN的比例的影响因生育时期的不同而异。覆草显著增加了小麦拔节期0~5 cm土层土壤中SON的含量,覆膜各土层SON含量均较常规模式有所提高;开花期覆草和覆膜模式土壤中TSN和SON含量较拔节期的显著下降。施用无机氮肥对土壤中SON的含量无显著影响。     

High temperature catalytic metal field effect transistors for industrial applications

Field effect chemical sensors, utilising silicon carbide as semiconductor, can be operated at high temperature and in rough environments. Gas sensitive field effect transistors, MISiCFET, are now developed (ACREO, Kista in Sweden). This will increase the number of possible applications for field effect gas sensors. The first batch of MISiCFET devices is possible to operate in intermittent pulses of hydrogen/oxygen up to 775°C. At temperatures above 600°C, the gas response of the MISiC devices has very short time constants for a change between oxidising and reducing atmosphere and cylinder specific monitoring of a combustion engine has been demonstrated. Other industrial applications, like exhaust diagnosis and flue gas monitoring, have been demonstrated by the use of MISiC Schottky diodes at lower temperatures, 200°C–500°C.     

Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors

Analysis of the electrostatic characteristics and the gate capacitance of typical nanostructured carbon nanotube field effect transistors (CNTFETs) were performed numerically. A previously developed parallelized electrostatic Poisson's equation solver (PPES) is employed, coupled with a parallel adaptive mesh refinement (PAMR) to improve the numerical accuracy near the region where variation of potentials are significant. CNTFETs with four typical configurations of the gate electrode, the bottom gate (BG), the double gate (DG), the top gate (TG), and the surrounding gate (SG) were simulated. Effects of the nanotube arrangement and the gate length on the gate capacitance are presented and discussed. The simulation results show that SG-CNTFET possesses the largest gate capacitance among various structures. However, TG-CNTFET is recommended for practical applications by taking into account both the device performance and the difficulty of fabrication. According to the simulated gate capacitance, estimation of the on-state current of CNTFETs is possible.     

Kelvin Probe measurements of polymer coated gold substrates: Mechanism studies

The origin of work-function changes induced in polymer/metal structures (polyacrylic acid (PAA), ammonium and sodium polyacrylate) upon ammonia exposure is studied. To understand and explain the mechanism systematic measurements of uncoated and polymer coated metals are performed in Kelvin Probe (KP) setups. Additional data have been acquired through gravimetric and electrochemical experiments (cyclic voltammetry (CV)). The results obtained confirm that the field effect sensitive processes are taking place at the metal/polymer interface and allow their modelling. The intrinsic sensitivity of metallic samples upon ammonia exposure is influenced by the presence of coating polymers, by their ability to sorb water and to keep the metal surface wet or dry.     

Cognitive processes in complex tasks: introduction and discussion

This paper points out that the fusional limits of binocular stereoscopic viewing are an important factor, not only determining the reproduction range of stereoscopic images, but also the conformity between the stereoscopic display and stereoscopic vision. Experimental results showed that fusional limits increase in proportion to the field of view angle, and that they are affected not only by the size of the viewing target, but also by the effects that the environment has on the target. These findings explain the differences between binocular vision in real space and binocular vision in a stereoscopic display. Finally, the conditions under which observers arc able to view images of stereoscopic displays without excessive visual strain are discussed.