Optical properties of CeO<Subscript>2</Subscript> thin films

Cerium oxide (CeO₂) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10⁻⁶ Torr. The thickness of CeO₂ films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly transparent in the visible region. It is also observed that the film has low reflectance in the ultra-violet region. The optical band gap of the film is determined and is found to decrease with the increase of film thickness. The values of absorption coefficient, extinction coefficient, refractive index, dielectric constant, phase angle and loss angle have been calculated from the optical measurements. The X-ray diffraction of the film showed that the film is crystalline in nature. The crystallite size of CeO₂ films have been evaluated and found to be small. The experimental d-values of the film agreed closely with the standard values.     

Electrical conductivity and dielectric properties of cadmium thiogallate CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript> thin films

Cadmium thiogallate CdGa₂S₄ thin films were prepared using a conventional thermal evaporation technique. The dark electrical resistivity calculations were carried out at different elevated temperatures in the range 303–423 K and in thickness range 235–457 nm. The ac conductivity and dielectric properties of CdGa₂S₄ film with thickness 457 nm has been studied as a function of temperature in the range from 303 to 383 K and in frequency range from 174 Hz to 1.4 MHz. The experimental results indicate that σ_ac(ω) is proportional to ω ^s and s ranges from 0.674 to 0.804. It was found that s increases by increasing temperature. The results obtained are discussed in terms of the non overlapping small polaron tunneling model. The dielectric constant (ε′) and dielectric loss (ε″) were found to be decreased by increasing frequency and increased by increasing temperature. The maximum barrier height (W _m) was estimated from the analysis of the dielectric loss (ε″) according to Giuntini’s equation. Its value for the as-deposited films was found to be 0.294 eV.     

Effect of annealing on leakage current characteristics of Pt/Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript>/Pt thin-film capacitors

The effect of annealing on leakage current characteristics of Pt/Ba_0.6Sr_0.4TiO₃/Pt ferroelectric thin-film capacitors was investigated at the temperature range from 273 K to 393 K. The results show that the depletion layer width of the as-deposited BST film is about 3–5 times greater than that of the annealed film. For as-deposited samples, the Schottky barrier height increases with increasing temperature and voltage. However, for annealed samples, the Schottky barrier height linearly decreases with increasing voltage and is almost independent upon temperature.     

Optical band gap of Sn<Subscript>0.2</Subscript>Bi<Subscript>1.8</Subscript>Te<Subscript>3</Subscript> thin films

Sn_0.2Bi_1.8Te₃ thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm⁻¹. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.     

Synthesis and optical properties of CeO<Subscript>2</Subscript> nanocrystalline films grown by pulsed electron beam deposition

The nanocrystalline cerium dioxide (CeO₂) thin films were deposited on soda lime (SLG) and Corning glass by pulsed e-beam deposition (PED) method at room temperature. The structure of the produced CeO₂ thin films was investigated by X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), and micro Raman spectroscopy. The surface topography of the films was examined by atomic force microscopy (AFM). Film thickness and growth morphologies were determined with FEG-SEM from the fracture cross sections. XPS studies gave a film composition composed of +4 and +3 valent cerium typical to nanocrystalline ceria structures deficient in oxygen. The ceria films were polycrystalline in nature with a lattice parameter (a) of 0.542 nm. The Raman characteristics of the source material and the films deposited were very similar in character. Raman lines for thin film and bulk CeO₂ was observed at 465 cm⁻¹. The optical properties of the CeO₂ films were deduced from reflectance and transmittance measurements at room temperature. From the optical model, the refractive index was determined as 1.8–2.7 in the photon energy interval from 3.5 to 1.25 eV. The optical indirect band gap (E _g) of CeO₂ nanocrystalline films was calculated as 2.58 eV.     

Dielectric behavior of Cu–GeO<Subscript>2</Subscript> cermet thin films

Capacitance and dielectric loss measurements were carried out using an Al/Cu–GeO₂/Al sandwich structure for 0 to 10 vol% Cu films, 120–400 nm thick, deposited at 0.4–1.5 nm/s in the frequency and temperature range 1–10⁶ Hz and 90–573 K, respectively. The variation of capacitance and dielectric loss with frequency and temperature follows the Goswami and Goswami model. Capacitance decreases slowly with increasing thickness and also varies with the change in deposition rate of the cermet film.     

Impact of various irradiation photon energies and gamma doses on the optical properties of ZnSe nanostructure thin film

ZnSe thin films were prepared by thermal evaporation technique under high vacuum (10⁻⁶ Torr) at 300 K and different film thickness. The structure of thin films was measured using grazing incident in-plane X-ray diffraction (GIIXD) and shows single phase zinc blende structure. The particle sizes of the deposited films were estimated for low film thickness by TEM and high film thickness by GIIXD. The particle size of ZnSe films was decreased from ~8.53 to 3.93 nm as film thickness lowered from 200 to 20 nm which ensures the nanocrystalline structure. The optical transmission (T) and reflection (R) in the wavelength range 190–2,500 nm for irradiated and unirradiated ZnSe thin films under investigation were measured. The effect of irradiation of different energies in range (0.1–1.25 MeV) from X-ray, ¹³⁷Cs and ⁶⁰Co irradiation sources were studied for ZnSe thin films of 100 and 200 nm thicknesses. The dependence of the absorption spectra and refractive index were investigated for different energies irradiation sources. The ZnSe films show direct allowed interband transition. The effect of particle size of nanocrystalline ZnSe thin films for unirradiated and irradiated by gamma (γ) doses from ¹³⁷Cs on the optical properties was studied. Both the optical energy bandwidth and absorption coefficient (α) were found to be (γ) dose dependent.     

Characterization of ZrO<Subscript>2</Subscript> thin films deposited by MOCVD as ceramic coatings

Transparent cubic-, tetragonal-zirconia thin films were successfully deposited on glass and quartz substrates by using the metalorganic chemical deposition technique. The thin films were achieved by adjusting deposition parameters such as substrate temperature, oxygen partial pressure, and zirconium acetylacetonate (Zr(acac)₄) used as precursor. Structural and morphological characterizations of the as-deposited thin films were studied by XRD, Raman spectroscopy, SEM, and AFM techniques, while some optical properties such as transmittance and refractive index were determined by means of the UV–vis technique. The ZrO₂ films, grown at 700 °C and different P_{\textO 2} :P_{\textZr(acac)4} P_{{{\text{O}}_{ 2} }}{:}P_{{\text{Zr(acac)}_{4} }} ratios, displayed very variable particle sizes ranging from ~0.2 to 1.0 μm, and crystallite sizes within 10–30 nm forming a uniform film. Low mean roughness was obtained in the samples, which varied from 0.674 to 1.33 nm. These films grew with a columnar structure and apparently with low carbon content (<0.2%). All the synthesized thin films showed an adequate optical transmission, but the most transparent (>80%) was obtained with a P_{\textO 2} :P_{\textZr(acac)4} P_{{{\text{O}}_{ 2} }} {:}P_{{\text{Zr(acac)}_{4} }} ratio of (Pa) 107:0.2. The oxygen partial pressure influences the crystallinity of the as-deposited films, while the refractive index remains constant.     

Synthesis and luminescence properties of Eu<Superscript>2+</Superscript>-doped Li<Subscript>2</Subscript>SrSiO<Subscript>4</Subscript>

We have studied the luminescence spectra of Li₂Sr_{1 − x} Eu _x SiO₄ (x = 0.0001–0.01) solid solutions prepared by solid-state reactions and a sol-gel process in a reducing atmosphere. The spectra show a broad band in the range 500–700 nm, centered at 578 nm, which is due to the 4f ⁶5d → 4f ⁷ transition. The luminescence excitation spectrum shows, in addition to bands due to Eu²⁺ 4f ⁷ → 4f ⁶5d transitions, a strong band centered at 174 nm, attributable to absorption in the SiO₄⁴⁻ group.     

Size dependent optical characteristics of chemically deposited nanostructured ZnS thin films

ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S²⁻ and Zn²⁺ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3·68–4·10 eV as thickness varied from 332–76 nm. The structural estimation shows variation in grain size from 6·9–17·8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of n-type.     

A thermodynamic investigation of NdMe<Subscript>3</Subscript>Sr<Subscript>3</Subscript>Mn<Subscript>4</Subscript>O<Subscript>12</Subscript> (Me—Li,Na, K) manganites in the range from 298.15 to 673 K

High-temperature synthesis according to ceramic technology is used to prepare new manganites NdMe₃Sr₃Mn₄O₁₂ (Me—Li, Na, K). The X-ray powder method is used to find that the compounds crystallize in tetragonal syngony, and the parameters of their crystal lattices are determined. The method of dynamic calorimetry is used in the range from 298.15 to 673 K for determining the heat capacity of manganites; in so doing, the presence of second-order phase transitions is revealed. In view of phase transitions, equations are derived which describe the dependence C _p ^ℴ ∼ f(T) in the range from 298.15 to 673 K. The temperature dependences of permittivity and electrical resistance of manganites are investigated at 303–503 K; these dependences likewise confirm the presence of second-order phase transitions.     

Al-doped Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> Nanoparticles and Their Magnetic Properties

Al-doped Fe₃O₄ nanoparticles were synthesized for the first time via the Composite-Hydroxide-Mediated (CHM) method from Fe₃O₄ and Al₂O₃ without using any capping agent. The synthesis technique was one-step and cost effective. The obtained products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersion spectroscopy (EDS). Samples with a tunable size of 500–1500 nm, 200–800 nm, and 100–700 nm could be obtained by adjusting the reaction time and temperature. Magnetic property of the as-synthesized Al-doped Fe₃O₄ nanoparticles was investigated. Magnetic hysteresis loops measured in the field range of −10 kOe<H<10 kOe, indicated the ferromagnetic behavior with coercivity (H _c) of 470 and 110 Oe and remanence magnetization (M _r) of 13 and 6.4 emu/g at the temperature of 5 and 300 K, respectively. The saturation intensity (M _s) was 46.1 emu/g at 5 K, while it was about 43.6 emu/g at 300 K.     

Optical and electrical properties of obliquely deposited a-GeSe<Subscript>2</Subscript> films

Oblique deposition and exposure to photons of energy greater than the bandgap have a marked effect on the structure and consequently on electrical and optical properties of amorphous chalcogenides. This paper presents a detailed study of photoinduced effect and oblique deposition effect on electrical and optical properties of a-GeSe₂ films deposited at different angles (0°–80°). The indirect-optical bandgap energy (2.18 eV) was found to be independent of angle of incidence. The spectral response of refractive index and extinction coefficient has been determined in the wavelength range of 0.6–1 μm using the transmission spectra. Refractive index decreases with the increase in angle of incidence. The value of refractive index was observed to be 2.28 for 0° and 2.00 for 80° films at 0.646 μm. An increase in bandgap was also observed on exposure to the UV light for ∼120 min. The change in bandgap became more significant with the increase in angle of incidence (∼ 2.3% for 0° and ∼10.6% for 80°). The temperature dependence of conductivity along with time dependence and spectral response of photocurrent has also been investigated.     

Characterization of spray deposited CoWO<Subscript>4</Subscript> thin films for photovoltaic electrochemical studies

Preparation of Cobalt tungstate (CoWO₄) thin film by spray pyrolysis with ammonical solution as a precursor is presented. The phase and surface morphology characterizations have been carried out by XRD and SEM analysis. The study of optical absorption spectrum in the wavelength range 350 – 850 nm shows direct as well as indirect optical transitions in the thin film material. The d. c. electrical conductivity measurements in the temperature range 310–500 K indicate semiconducting behavior of the thin film. The thin films deposited on fluorine doped tin oxide (FTO) coated conducting glass substrates were used as a photoanode in photovoltaic electrochemical (PVEC) cell with configuration: CoWO₄ | Ce⁴⁺, Ce³⁺ | Pt; 0.1 M in 0.1 N H₂SO₄. The PVEC characterization reveals the fill factor and power conversion efficiency to be 0.36 and 0.62%, respectively. The flat band potential is found to be −0.18 V (SCE).     

Optical characterization of thin chalcogenide films by multiple-angle-of-incidence ellipsometry

Optical properties of thin chalcogenide films from the systems As-S(Se) and As-S-Se were investigated as a function of the film composition, film thickness and conditions of illumination by light using multiple-angle-of-incidence ellipsometry. Thin films were deposited by thermal evaporation and exposed to white light (halogen lamp) and to monochromatic light from Ar⁺ — (λ = 488, 514 nm) and He-Ne- (λ = 632.8 nm) lasers. The ellipsometric measurements were carried out at three different angles of light incidence in the interval 45-55°, at λ = 632.8 nm. An isotropic absorbing layer model was applied for calculation of the optical constants (refractive index, n and extinction coefficient, k) and film thickness, d. The homogeneity of the films was checked and verified by applying single-angle calculations at different angles. It was shown that the refractive index, n of As-S-Se films is independent of film thickness in the range of 50 to 1000 nm and its values varied from 2.45 to 3.05 for thin layers with composition As₂S₃ and As₂Se₃, respectively. The effect of increasing in the refractive index was observed after exposure to light which is related to the process of photodarkening in arsenic containing layers. The viability of the method for determining the optical constants of very thin chalcogenide films with a high accuracy was confirmed.     

Ab initio study of structural,electronic, phase diagram,and optical properties of CdSe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript><Emphasis Type="Italic">1−x</Emphasis></Subscript> semiconducting alloys

Based on the self-consistent ab initio full potential-linearized augmented plane wave method, the structural, electronic, optical, and thermodynamic properties of CdSe _x Te_1−x ternary semiconductor alloys have been investigated. The exchange–correlation potential was calculated using both the generalized gradient approximation (GGA) by Perdew–Burke–Ernzerhof (PBE) and the GGA by Engel–Vosko (EV-GGA). The ground-state properties are determined for the cubic bulk materials CdSe, CdTe, and their mixed crystals at various concentrations (x = 0.25, 0.5, and 0.75). Deviation of the lattice parameter from Vegard’s law and the bulk modulus from linear concentration dependence has been examined. The microscopic origins of the band-gap bowing parameter have been discussed. Moreover, the refractive index and the optical dielectric constant for CdSe _x Te_1−x are studied using different models. Besides, the thermodynamic stability of the alloys of interest is investigated by means of the miscibility critical temperature.     

Optical properties of Sb2Se3 thin films

The optical constants (the refractive index n and the absorption index k) of Sb₂Se₃ thin films deposited at room temperature on quartz have been calculated in the wavelength range (5000–2000 nm) using a transmission spectrum. Both n and k were found to be practically independent on either time, up to 6 months, or the film thickness in the range of 102–760 nm. Beyond the absorption edge, the absorption is due to allowed indirect and direct transitions with energy gaps of 1.225 and 1.91 eV, respectively. The value of the optical gap depends on the annealing temperature. X-ray analysis showed that the prepared films at room temperature had amorphous structure while the films annealed at 200°C for 1 h were verified to be crystalline.     

Influence of Relevant Gas Pressure on the Properties of Ionplated Ta2O5 Films. Einfluss relevanter Gasdrücke auf die Eigenschaften ionenplattierter Ta2O5 Schichten

Ta₂O₅ films were deposited onto unheated fused silica substrates (Suprasil®) by reactive low voltage ion plating (RLVIP). From these films of about 200 nm thickness the optical properties (refractive index n and the absorption coefficient k) and also the mechanical properties (density ρ and intrinsic stress σ) were investigated in dependence of the working gas pressure (Ar) and the reactive gas pressure (O₂). The experiments show a reasonable correlation between refractive index, density and intrinsic stress of the films. With low total pressure high refractive indices (up to n₅₅₀=2.25), high compressive film stress and high relative film density were found. However the film density, the refractive index and also the intrinsic stress decreased with films prepared under raising total gas pressure. The optical absorption depends on the amount of oxygen in the gas phase during deposition. By adding more oxygen to the Ar/O₂ gas mixture primarily the absorption could clearly be decreased.     

Optical constants of the nano-crystal and polymer composite thin film PbTiO3/PEK-c

Composite thin films of PbTiO₃ nano-crystals and high transparency PEK-c polymer were prepared by spin coating. The size of PbTiO₃ nanocrystals was evaluated to be 30–40 nm. The transparency spectra of PEK-c composite thin film in 360–800 nm were measured. The optical constants n, k of the film in the wavelength range 400–620 nm were investigated by the transmission spectrum. The dispersion of refractive index fits well to a three-term Sellmeier relation. At 633 nm wavelength the refractive index of PbTiO₃/PEK-c film was measured to be 1.6628 by a prism coupling method and showed a good agreement with the calculated value using the Sellmeier relation.     

Scintillating properties of Pr-doped YAlO<Subscript>3</Subscript> single crystals grown by the micro-pulling-down method

Pr-doped YAlO₃ (0.1, 0.5, 1, 2, 3, 4, 5, and 6 mol % Pr₆O₁₁) single crystals were grown by the micro-pulling-down method and their optical and luminescence properties were investigated in the range 80–300 K. Dominant 5d–4f double-peak emission at 254 and 282 nm was observed both in radio-and photoluminescence, and was accompanied by weak 4f–4f luminescence at 495 and 620 nm. The 5d–4f emission shows almost no temperature dependence below 300 K, and achieved radioluminescence intensity is more than 15 times higher than that of Bi₄Ge₃O₁₂. The text was submitted by the authors in English.