电子陶瓷用高纯碳酸锶制备方法

对湿化学法合成高纯碳酸锶的几种制备方法（氯化锶法、硝酸锶法和氢氧化锶法）进行了研究，分析了制备条件对产品化学纯度、粒度及粒子形貌的影响，结果表明采用氢氧化锶精制碳化法可以制取化学纯度高、粒度分布窄、近似球形的高纯碳酸锶微粉。     

纳米金刚石薄膜的制背

采用微波等离子体化学气相沉积系统,利用氢气、甲烷、氩气和氧气为前驱气体,在直径为5 cm的(111)取向镜面抛光硅衬底上沉积出高平整度纳米金刚石薄膜.利用扫描电镜、X射线衍射谱和共焦显微显微拉曼光谱我们分析了薄膜的表面形貌和结构特征.该薄膜平均粒径约为20 nm.X射线衍射谱分析表明该薄膜具有立方相对称 (111)择优取向金刚石结构.在该薄膜一阶微显微拉曼光谱中,1 332 cm-1附近微晶金刚石的一阶特征拉曼峰减弱消失,可明显观测到的三个拉曼散射峰分别位于1 147 cm-1、1 364 cm-1和1 538 cm-1,与己报导的纳米金刚石拉曼光谱类似.该方法可制备出粒径约为20 nm粒度分布均匀致密具有较高含量的sp3键的纳米金刚石薄膜.     

The use of high glass temperature polymers in the production of transparent, structured surfaces using nanoimprint lithography

Polymers with high glass transition temperatures, fluorinated ethylene propylene copolymer (FEP) and poly(ethylene naphthalate) (PEN), have been used in imprint lithography as a protective support layer and as a secondary mould, to imprint superficial structures into a polymer with a lower glass transition temperature, namely poly(methyl methacrylate) (PMMA). As a support layer, FEP replaces fragile silicon based supports for the production of freestanding, structured sheets of PMMA, useful, for example, in biomedical applications where transmittance optical microscopy is required. Secondary PEN moulds, produced by imprinting using silicon-based primary moulds, have been used to transfer sub-micrometer tall structures to a freestanding PMMA sheet. Similarly, hole structures, with different dimensions, have been embossed in both sides of a PMMA sheet simultaneously.     

The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

We describe the metalorganic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500°C, and 200 Torr in a horizontal quartz reactor using TMIn, TESb, AsH₃, and PH₃. By changing the layer thickness and composition, we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 4.4 μm. Excellent performance was observed for a SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An optically pumped, double heterostructure laser emitted at 3.86 μm with a maximum operating temperature of 240K and a characteristic temperature of 33K. We have also made electrically injected lasers and LEDs utilizing a GaAsSb/InAs semi-metal injection scheme. The semi-metal injected, broadband LED emitted at 4 μm with 80 μW of power at 300K and 200 mA average current. The InAsSb/InAsP SLS injection laser emitted at 3.6 μm at 120K.     

The use of atmospheric pressure MOVPE for the growth of high performance uncooled 1300 nm DFB lasers

Manufacture of high performance uncooled 1300 nm distributed feed-back (DFB) lasers operating single mode over the −40 to +85°C range requires control of the wavelength variation across a 2″ wafer to less than 10nm and preservation of grating definition during processing and regrowth. We have used atmospheric pressure metalorganic vapor phase epitaxy, without substrate rotation to achieve the necessary uniformity. Material was assessed using photoluminescence, x-ray diffraction, transmission electron microscopy, electrochemical current/voltage profiling, and secondary ion mass spectroscopy. The devices are based on a strained quantum well structure with an n-type grating layer to provide gain coupling. The best result gave a wavelength spread across 32×32 mm center square of a 2″ InP wafer of 3 nm. Buried heterostructure DFBs manufactured with high yield in this way operate from −40 to +85°C, with thresholds at 85°C as low as 18 mA.