共查询到20条相似文献,搜索用时 125 毫秒
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用可编程逻辑器件实现单稳态触发器 总被引:5,自引:0,他引:5
可编程逻辑器件一般用于完成数字电路的功能。对用可编程逻辑器件技术实现模拟集成电路的功能进行了探讨,研究了实现单稳态触发器脉冲宽度控制的两种方法:用外接RC的单稳态触发器,用外部信号控制脉宽。实验结果在全数字电路的基础上,用可编程逻辑器件实现的单稳态触发器脉宽控制能有效地实现激光引信电路系统小型化,提高了电路和可靠性。 相似文献
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基于可编程逻辑器件的数字电路设计 总被引:1,自引:1,他引:0
可编程逻辑器件的出现,使得传统的数字系统设计方法发生了根本的改变,所以有必要介绍一下基于可编程逻辑器件的数字电路设计方法.以计数器的实现方法作为实例,介绍了采用原理图和硬件描述语言两种方法作为输入,实现计数器的方法,并描述了编译仿真的方法,给出了对应的仿真结果.采用熟悉的器件为例,使基于可编程逻辑器件的数字电路设计方法更容易理解掌握. 相似文献
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介绍一种相控阵天线激励器的设计方法,激励器电路由模拟电路部分和数字电路部分组成,设计中将主要模拟电路部分集成为一专用集成器件,数字电路部分由可编程逻辑器件CPLD完成设计,并用VHDL描述语言实现设计,CPLD采用美国CYPRESS公司的CY37128P84-125JI器件,相应的开发软件为WARP6.2。 相似文献
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MAX+plus Ⅱ软件在数字电路设计中的应用 总被引:1,自引:0,他引:1
MAX plus Ⅱ开发软件的出现为现代数字电路的设计提供了一个有利的开发平台,本文通过利用MAX plus Ⅱ开发软件和复杂可编程逻辑器件CPLD实现一变周期、变占空比的波形发生器为例,详细介绍了MAX plus Ⅱ开发软件在现代数字电路设计中的应用。 相似文献
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可编程逻辑器件为数字设计中复杂功能的实现提供了一种流行的方法。虽然制造商尚未提供能与VLSI数字电路复杂性相比拟的模拟电路,但现场可编程模拟电路正在信号调整和滤波应用中获得广泛采用。这些器件基于CMOS跨导及开关式电容放大器,可为相对复杂的设计问题提供一种便利的解决方案。Lattice 相似文献
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Much interest has been expressed in the use of GaAs MESFET's for high speed digital integrated circuits (IC's). Propagation delays in the 60- to 90-ps/gate range have been demonstrated by several laboratories on SSI and MSI logic circuits. Recently, large scale digital IC's with over 1000 gates have been demonstrated in GaAs. In this review paper, the device, circuit, and processing approaches presently being explored for high speed GaAs digital circuits are presented. The present performance status of high speed circuits and LSI circuits is reviewed. 相似文献
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Rodwell M.J.W. Minh Le Brar B. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2008,96(2):271-286
Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield process flows at 500 nm feature size obtain 450 GHz cutoff frequencies and 5 V breakdown and enable high yield fabrication of integrated circuits having more than 3000 transistors. Laboratory devices at 250 nm feature size obtain 755 GHz . We describe device and circuit bandwidth limits associated with HBTs, develop scaling roadmaps for HBTs having lithographic minimum feature sizes between 512 and 64 nm, and identify key technological challenges in realizing 480-GHz digital ICs and 1000-GHz amplifiers. Key features of manufacturable self-aligned dielectric sidewall processes are described in detail. 相似文献
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Bi-CMOS技术进展(下) 总被引:1,自引:0,他引:1
三、Bi-CMOS模拟/数字电路 随着电子系统复杂性的增加以及对可靠性要求的提高,过去那种将模拟电路和数字电路通过PC板互连起来的方法已经不适应。因此,实现A/D LSI已经成为人们追求的目标。这种芯片不仅在数字通讯、测量仪器、图像处理等方面有广泛用途,而且在民用领域,如照像机的自动曝光、录相机的自动聚焦、马达控制、声音的合成和识别等方面也有广阔的市场。 相似文献
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当今,数字时代的核心动力便是单片机,DSP,PLD/EDA,以其各自的特点满足了各种需要,推动着信息技术的快速发展。这里将对这三类电子产品分别加以介绍,并作比较和分析。 相似文献
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提出了一种新的干涉仪测向处理技术———基于PLD硬件处理的数字式多基线干涉仪测向技术,对高速带通欠采样、数字鉴相、数字测频及解模糊算法等相关的技术进行了详细的阐述,最后给出了工程样机性能测试结果,并与国内外相关设备的技术性能进行了对比。 相似文献
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This letter highlights features of an optimized serial communication system, including an oversampling technique of data recovery, issues related to off-board communications and a modified universal asynchronous receiver transmitter (UART) implemented in a programmable logic device (PLD). The resulting system provides high skew tolerance at 44 Mb/s data rate and has achieved a transmission distance of 130 m, at this rate, with the aid of an enhanced differential transceiver circuit. The principal application is for embedded systems with medium distance communication requirements. This UART can be integrated with other communication functions, such as packet routing switches, in a PLD device 相似文献
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Fortuna L. Frasca M. Gioffre M. Rosa M.L. Malagnino N. Marcellino A. Nicolosi D. Occhipinti L. Porro F. Sicurella G. Umana E. Vecchione R. 《Circuits and Systems Magazine, IEEE》2008,8(3):6-18
The development of post silicon technologies based on organic materials consolidates the possibility to realize new devices and applications with unusual properties: flexibility, lightweight, disposability. Both materials and processes play a fundamental role in this new electronic framework and have been improved continuously in the last decades. In this contribution, a new perspective will be drawn by considering a complete technology platform that lead printed organic electronics technology from the basic device and materials to a manufacturing process flow, design tools and market applications development. The final goal of the proposed approach is the manufacturing of organic circuits with sub-micron feature size at low fabrication costs with high flexibility and application versatility by using additive manufacturing processes. The identification of suitable material features and process steps and the implementation of dedicated CAD tools in a complete workflow are here reported. Moreover, the feasibility of the adopted technology is demonstrated by the design of both digital and analog circuits. Multilayered structure devices, like Organic Thin Film Transistor (OTFT), are used to design complex architectures like arithmetic logic units and nonlinear oscillators. 相似文献