退火温度对Cr-Si压阻薄膜电性能的影响

采用射频磁控溅射法在氧化铝陶瓷基底上制备了Cr-Si-Ni-Ti压阻薄膜,研究了不同退火温度对薄膜电性能的影响.结果表明:在溅射态及退火温度低于600℃时,薄膜为非晶态.随着退火温度的升高,薄膜的电阻温度系数(TCR)逐渐增大,应变因子(GF)先增大后减小,室温电阻率(ρ)则逐渐降低.在退火温度为300℃时,Cr-Si...     

Characterizations of high resistivity TiNxOy thin films for applications in thin film resistors

We report about developing high resistivity thin film resistors using titanium oxy-nitride. Titanium nitride films of different thicknesses ranging from 50 to 300 nm were deposited on SiO₂/Si substrates using the reactive magnetron sputtering method. After deposition, these films were annealed in the air ambient. The structural and electrical properties of the films were examined as a function of annealing temperature. The samples with various thicknesses show TiN(1 1 1) phase. The sheet resistance increases from 150 up to 420 Ω/□ when the film thickness decreases from 300 to 50 nm. Temperature coefficience of resistance (TCR) of the films significantly decreased with decreasing the film thickness. The TCR of 50-nm thick film is quite low, about 49 ppm/K.     

热处理对磁控溅射法制备p-ITO(40 nm)薄膜特性的影响

为改善在实际生产中,p-ITO在膜厚较薄时所表现出的多种不良,如退火后膜质存在花斑不良、膜层易被刻蚀液腐蚀等,进行退火对p-ITO薄膜特性影响的研究。本实验利用磁控溅射法在玻璃基板上制备出40nm厚度的p-ITO膜,并在氮气环境中对膜层进行不同温度和时间的退火处理。分别采用XRD、AFM和SEM对p-ITO的结晶度和微观结构进行表征,并使用四探针(4-point probe,4P)和自动光学测试设备分别测试其方块电阻和光透射率。测试结果表明:pITO结晶温度相对于α-ITO存在严重滞后性;α-ITO(40nm)230℃已结晶充分,而p-ITO在230℃才开始结晶;p-ITO在230～250℃时结晶程度及均一性较差,导致多种特性的不稳定,比如膜质花斑状颜色差异(花斑不良),方块电阻、膜层厚度均一性差,膜层易受腐蚀等;退火温度提高到260～270℃时结晶基本完全,对薄膜的各种特性改善效果显著,如方块电阻降低、光透射率增加、花斑和腐蚀改善等。测试数据还反映出玻璃中部位置相对于边缘位置结晶程度差,可能原因为退火设备实际生产时玻璃中间位置热风阻力较边缘位置大,受热不充分导致。适当提高退火温度和时间,对pITO实际生产中遇到的多种不良有显著改善效果。     

热处理对TaN薄膜电性能的影响

采用直流磁控溅射法在Al2O3陶瓷基片上制备了TaN薄膜,研究了热处理温度和时间对TaN薄膜的方阻(R□)及电阻温度系数(TCR)的影响。研究发现,在热处理时间为2h的条件下,热处理温度在200℃到600℃变化时,R□从12?/□增加到24?/□,TCR从15×10-6/℃下降到-80×10-6/℃;在热处理温度为300℃的条件下,热处理时间对R□及TCR影响较小,随着热处理时间的增长,R□及TCR略有变化。     

退火温度对ZnO/PZT薄膜结构及电阻率的影响

采用射频反应磁控溅射法在Pb(Zr0.52Ti0.48)O3(PZT)/Pt/Ti/SiO2/Si基片上制备了ZnO薄膜,利用X线衍射仪(XRD)、原子力显微镜(AFM)、霍尔效应测试系统等对不同退火温度下制备薄膜的结构、形貌及电阻率等进行了分析表征。结果表明,退火温度600℃的ZnO薄膜(002)择优取向较好,晶粒大小均匀,表面平整致密。随着退火温度的增大,电阻率先下降后升高,600℃时ZnO薄膜电阻率达最小。     

Al-N共掺杂ZnO:Mn稀磁半导体薄膜的结构与性能

采用反应磁控溅射法在室温下沉积前驱体氮化物,在大气环境、500℃下氧化退火30min后获得了Al-N共掺杂ZnO:Mn薄膜。研究了直流与射频反应磁控溅射对氧化退火薄膜结构和性能的影响。结果表明:两种工艺制备的退火薄膜均具有ZnO纤锌矿结构,且均为n型导电。射频溅射退火样品具有很好的c-轴择优取向,其表面光滑平整,表面粗糙度RMS值为1.2nm,且具有室温铁磁性,饱和磁化强度(Ms)和矫顽力(Hc)分别为46.8A·m–1和4.9×103A·m–1;而直流溅射退火样品表面凹凸不平,RMS值为25.8nm,室温下是反铁磁性的。     

磁控溅射法制备Ag/FePt/C/FePt薄膜的结构和磁性能

采用磁控溅射法,在自然氧化的Si(001)基片上沉积了Ag/FePt/C/FePt纳米薄膜,并分别在400,450,500,600℃下对薄膜样品进行了1h的退火热处理。利用X射线衍射仪和振动样品磁强计,对薄膜样品的结构和磁性进行了分析。结果表明,当热处理温度为450℃时,Ag/FePt/C/FePt薄膜中已形成了具有有序面心四方结构的L10-FePt。随着热处理温度的升高,薄膜样品的有序化程度提高,矫顽力Hc增强,晶粒尺寸变大。当热处理温度为600℃时,薄膜样品的平行膜面Hc为905.8kA·m-1,晶粒尺寸为23nm。     

退火温度对WO_3薄膜结构及气敏性能的影响

采用直流磁控溅射法制备了WO3薄膜,并在350~550℃时对薄膜进行退火处理,研究了退火温度对薄膜结构及气敏性能的影响。结果表明:退火前及350℃退火后的薄膜为非晶态,450℃和550℃退火后的薄膜为WO3–x型晶态;随退火温度的提高,薄膜厚度增加,晶粒度增大。550℃退火后薄膜的厚度,较450℃退火后薄膜厚30nm,晶粒度相差8nm;450℃和550℃退火后的薄膜,在150℃时对体积分数为0.05%的NO2的灵敏度接近于22。     

基片温度对基于Bi1.5Zn1.0Nb1.5O7栅绝缘层的ZnO基TFT性能的影响

在不同基片温度(RT、300、400、500和600℃)下,采用射频磁控溅射法制备了ZnO薄膜和BZN薄膜.研究表明,所制备的BZN薄膜拥有非晶态结构,ZnO薄膜具有c轴择优取向,在基片温度为500℃时,获得低的漏电流(10-7 A/cm2),比RT时的漏电流(10-4 A/cm2)低三个数量级.将所制备的ZnO薄膜和BZN薄膜分别作为ZnO-TFT的有源层和栅绝缘层,研究表明,在基片温度为500℃时,提高了器件性能,所取得的亚阈值摆幅(470 mV/dec.)是RT时的亚阈值摆幅(1 271 mV/dec.)的三分之一;界面态密度(3.21×1012 cm-2)是RT时的界面态密度(1.48×1013 cm-2)的五分之一.     

Effects of Heat Treatment on Thermoelectric and Infrared Properties of Bi2Te3 Films

In this work, Bi2Te3 films (250 nm) are fabricated on SiO2/Si substrates by radio frequency (RF) magnetron sputtering at room temperature, and the prepared films are annealed over the temperature range of 200 ℃ to 400 ℃. Crystallinity and electrical properties of the films can be tuned correspondingly. The power factors of Bi2Te3 films of 0.85 W/K2cm to 11.43 W/K2cm were achieved after annealing. The infrared reflectance measurements from 2.5 m to 5.0 m demonstrate that there is also a slight red-shift of the plasma oscillation frequency in the Bi2Te3 films. By means of plasmonic calculations, we attribute the red-shift of absorption peaks to the reduction of carrier concentration and the change of effective mass of Bi2Te3 films with the increased annealing temperature.     

在二氧化硅衬底上制备磁光Ce：YIG薄膜用于磁光波导型器件

对Ce1YIG磁光薄膜的制备过程及磁光性能进行了详细的研究．用RF磁控溅射法在二氧化硅的基片．上淀积Ce1YIG薄膜,再对此薄膜进行晶化处理,以得到具有磁光性能的Ce1YIG薄膜．本文讨论了晶化过程中,Ce1YIG薄膜微观结构的变化对其磁光性能的影响．结果表明：采用波长为630nm的可见光测量,薄膜的饱和法拉第旋转系数θF为0．8deg／μm．同时,晶化薄膜易磁化方向为平行于膜面方向,其居里温度点为220℃．所得Ge1YIG薄膜的参数表明：所制备的薄膜适宜于制备波导型磁光隔离器．     

On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering

Silicon–germanium films, doped with boron, were deposited on oxidised silicon substrates by RF magnetron sputtering. The post-deposition dopant activation and film crystallisation was done by annealing in the temperature range from 580 to 900 °C. The structural changes in the silicon–germanium films caused by the presence of boron and annealing were investigated by high-resolution transmission electron microscopy. The temperature coefficient of resistance (TCR) was characterised in the temperature range from room temperature to 210 °C and correlated to the nano-structure of the films. The TCR values were explained by the contribution of different scattering mechanisms and confirmed by low-frequency noise measurement. Very low values of TCR can be obtained by selecting appropriate boron content and post-deposition annealing conditions.     

RF溅射ZnO薄膜工艺与结构研究

通过RF磁控溅射在Si(100)基片上制备了ZnO薄膜,并研究了磁控溅射中各生长参数,如衬底温度、氧分压及后处理工艺等因素对ZnO薄膜微结构、表面形貌与结晶取向的影响。结果表明:溅射温度和氧分压对薄膜的微结构与择优取向有很大的影响,并对不同的溅射工艺进行了分析比较,从而确定了最佳溅射及后处理条件:RF溅射温度小于300℃,功率为50W,ψ(Ar:O2)为20:5,退火温度550~600℃,并获得了c轴择优取向的ZnO薄膜。     

柔性高温NiCr薄膜应变计研究

耐高温的NiCr薄膜应变计在航空、航天领域有广泛的需求。采用射频磁控溅射方法制备了NiCr薄膜,研究了溅射气压和衬底温度对NiCr薄膜电阻温度系数的影响规律,结果表明:当溅射气压为0.2 Pa,基片温度为400℃时,电阻温度系数最小为130.7×10^-6/℃。利用优化的工艺条件,在Hastelloy柔性合金衬底上制备了NiCr薄膜应变计,测试结果表明,所制备的NiCr薄膜应变计在各个温度下其电阻随着应变呈线性变化,其应变灵敏度(GF)因子随温度增加而增大,当温度超过200℃后,GF因子缓慢变化。温度为400℃时,GF因子达到3。实验得到的基于Hastelloy合金衬底的柔性薄膜应变计为高温应变测量提供了一种新的手段。     

射频磁控溅射氧化钒薄膜的结构与性能研究(英文)

以非制冷微测辐射热计型红外探测器应用为需求背景,采用射频磁控溅射技术在300℃低温条件下制备了氧化钒薄膜。采用X射线衍射(XRD)、原子力显微镜(AFM)、能量色散谱(EDS)及X射线光电子能谱(XPS)技术表征了薄膜的结晶状态、微观结构与化学组成。采用四探针技术研究了薄膜的电学性能。结果表明该薄膜主要为非晶态的二氧化钒(VO2),并具有光滑的表面形貌。这种非晶VO2薄膜在22～100℃温度范围内不存在半导体-金属相变。100 nm厚的非晶VO2薄膜室温下的面电阻为600 kΩ/□,同时表现出-2.1%/℃的较高电阻温度系数(TCR),这表明该薄膜有希望用于非制冷微测辐射热计型红外探测器。     

DC-18GHz微波功率薄膜电阻器的设计及制作

设计并仿真了频率范围为DC-18GHz,功率负载为20W的微波功率薄膜电阻器,根据仿真结果,采用反应磁控溅射法制备了TaN微波功率薄膜电阻器。仿真结果表明,所设计的薄膜电阻器在DC-18GHz频率范围内,电压驻波比均小于1.2,加载20W微波功率时,薄膜电阻器表面的最高温度为108℃。实验结果表明,所制备的TaN薄膜电阻器在DC-18GHz频率范围内,电压驻波比小于1.25;加载20W直流功率96小时,电阻器的阻值变化小于2%,表面最高温度为105℃;在25-125℃温度范围内电阻器的温度电阻系数为-40ppm/℃。     

厚度对TaN薄膜电性能的影响研究

采用直流反应磁控溅射法制备了TaN薄膜,研究了薄膜厚度对TaN薄膜微观结构及电性能的影响。结果表明,薄膜厚度对TaN薄膜的表面形貌和相结构都没有影响,但会显著影响TaN薄膜的电学性能。在87~424 nm的范围内,随着薄膜厚度的增大,所制TaN薄膜的电阻率从555×10–6.cm减小到285×10–6.cm,方阻从84/□减小到9/□,电阻温度系数(TCR)从–120×10–6/℃增加到+50×10–6/℃。可以通过调节薄膜的厚度调节TaN薄膜的电阻率和TCR。     

ZnO/Ag/ZnO多层膜的制备和性质研究

采用射频磁控溅射ZnO陶瓷靶和直流磁控溅射Ag靶的方法制备了ZnO/Ag/ZnO多层膜。用X射线衍射仪、紫外–可见分光光度计、四探针测试仪和金相显微镜对ZnO/Ag/ZnO薄膜的结构、光学透过率、方阻和稳定性进行了研究。结果表明,ZnO(60nm)/Ag/(10nm)/ZnO(60nm)薄膜呈现多晶结构,薄膜在520nm处的光学透过率高达87.5%,方阻Rs为6.2Ω/□。随着顶层ZnO薄膜厚度的增加,ZnO/Ag/ZnO薄膜的稳定性提高。     

RTD characteristics for micro-thermal sensors

The physical and electrical characteristics of MgO (medium layer) and Pt (sensor material) thin films deposited by a reactive RF sputtering method and a magnetron sputtering method, respectively, were analyzed as a function of the annealing temperature and time by using a four-point probe, SEM, and XRD. After being annealed at 1000 °C for 2 h, the MgO layer showed good adhesive properties on both layers (Pt and SiO₂ layers) without any chemical reactions, and the surface resistivity and the resistivity of the Pt thin film were 0.1288 Ω/□ and 12.88 μΩ cm, respectively. Pt resistance patterns were made on MgO/SiO₂/Si substrates by the lift-off method, and Pt resistance thermometer devices (RTDs) for micro-thermal sensor applications were fabricated by using Pt-wire, Pt-paste, and spin-on-glass (SOG). From the Pt RTD samples having a Pt thin film thickness of 1.0 μm, we obtained a temperature coefficient of resistor (TCR) value of 3927 ppm/°C, which is close to the Pt bulk value, and the ratio variation of the resistance value was highly linear in the temperature range of 25-400 °C.     

退火工艺对钛酸锶钡薄膜结构的影响

采用射频磁控溅射在Pt/Ti/SiO2/Si(100)衬底上制备Ba0.6Sr0.4TiO3(BST)铁电薄膜,在500~750℃之间对薄膜快速退火。XRD分析表明:500℃时BST薄膜开始晶化为ABO3型钙钛矿结构,温度越高结晶越完整,晶粒越大。理论计算表明,薄膜在低温退火后无择优取向,高温退火后在(111)、(210)晶面有择优取向。退火气氛、保温时间、循环次数等因素对薄膜晶粒大小无明显影响,但对表面粗糙度和结晶程度影响较大。