CEXTOR——一个适合MOS集成电路工艺的电路提取程序

本文描述了一个用于MOS集成电路工艺的电路提取程序CEXTOR.CEXTOR将集成电路的版图自动地转换为适合作精确电路模拟的电路描述.该程序能进行内部连接电阻,内部节点电容和晶体管尺寸的计算.本文提出的由矩形局部替代任意多边形的技术和连接与电阻同时提取的方法都改善了电路提取的速度.目前,CEXTOR已由FORTRAN-77编制程序,并在PCS,QU-68000计算机上实现.     

集成电路版图(layout)设计方法与实例

首先在理论上介绍了集成电路版图设计方法的详细步骤以及设计规则的特点。并结合一个运算放大器的版图设计实例详细讲解了集成电路版图设计的基本步骤技巧与准则。     

AutoCAD在厚膜版图设计中的应用

主要介绍了AutoCAD在厚膜版图设计中的应用，并在此基础上简要阐述了使用AutoCAD设计厚膜版图的一些方法。     

一种数模混合IC的版图设计

介绍了在数模混合IC版图设计时采用的一种结构化的层次式设计方法，并给出了应用此方法进行一个数模混合IC版图设计的过程。     

MCU内嵌ROM版图设计的程序实现

本文介绍了一种用高级语言编程实现MCU内嵌MASK ROM版图的程序生成方法，生成版图的格式为CIF格式。     

APD软件在LTCC版图设计中的应用

本文首先介绍了APD软件的基本功能和LTCC版图设计的简要流程，较详细地介绍了利用APD软进行LTCC版图设计的设计过程、主要设计选项的应用以及设计数据的输出方法。     

HCE：一个层次化VLSI版图的电路提取系统

本文采用基于边的线扫描算法的图形逻辑操作，并以此为基础设计了一个层次化的电路提取器（ＨＣＥ），单元重复利用率越高，层次化的电路提取器ＨＣＥ比平面化的电路提取器的速度越快，并且，本提取器ＨＣＥ能够处理非曼哈顿图形，提取器ＨＣＥ系统是在ＨＰ９０００／８３４图形工作站上开发完成的，该系统采用了已成为工业标准的软件开发环境，即ＵＮＩＸ操作系统，Ｘ窗口，Ｃ语言和ＥｔｈｅｒＮｅｔ网络，便于系统移植、维护和再开     

GEDS中的联机增量式设计规则检查及其实现

版图的联机增量式设计规则检查(IDRC)是指在版图设计过程中随设计的进行渐进完成版图设计规则检查.我们在版图交互编辑系统GEDS中嵌入并实现了一个IDRC过程.文中介绍了基本的设计规则检查算法和IDRC的实现策略.结合版图的分级设计还讨论了分级设计规则检查方法.     

CMOS单元版图生成算法综述

基于库单元的ASIC设计方法对单元版图自动生成工具提出了很高的要求。CMOS单元版图生成可分成MOS管布局、单元内布线和版图压缩三步。文章从不同的单元版图布图样式出发,综述布局、布线及压缩算法的发展现状,具体介绍几个单元版图生成系统,最后指出了该研究领域存在的问题。     

实用化多芯片组件（MCM）版图设计EDA新技术

本文针对实用化多芯片组件(MCM)的版图设计，介绍并探讨了一种全新的EDA设计技术。内容涉及了MCM的EDA设计方法、流程；MCM版图设计中EDA软件的应用和MCM版图设计等方面的内容。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.