溅射时间对Sn薄膜负极材料循环性能的影响

采用射频磁控溅射法在Cu箔基片上分别溅射5min、15min和25 min,制备了3种锂离子电池用Sn薄膜负极材料。通过XRD、SEM、ICP、恒电流充放电等方法对3种薄膜材料的结构、形貌及循环性能进行了表征。结果表明,在相同溅射功率250 W的情况下,随着溅射时间的增加,薄膜晶化程度加剧,颗粒增大并呈球形化趋势。样品的首次库仑效率逐渐升高,首次嵌锂容量逐渐降低。当溅射时间为15 min时,样品的循环性能优于其它两个样品,首次放电（嵌锂）比容量为710 mAh/g,30次循环后容量保持在650 mAh/g。     

溅射功率对Sb薄膜负极材料循环性能的影响

采用射频磁控溅射法分别在100、200、300 W和400 W功率下制备了4种锂离子电池用Sb薄膜负极材料.通过X射线衍射光谱法(XRD)、扫描电子显微镜法(SEM)、电感耦合等离子体光谱分析法(ICP)、恒电流充放电对4种薄膜材料的结构、形貌及循环性能等进行了表征.实验结果表明,随着溅射功率增加,Sb薄膜晶化程度加剧,结晶趋于完整,颗粒粗化.在相同溅射时间30 min的情况下,当功率为300 W时,获得的Sb薄膜电极具有最好的循环性能,首次嵌锂比容量达640 mAh/g,20次循环后比容量维持在323 mAh/g,容量保持率为51%.     

溅射时间对Sb薄膜负极材料循环性能的影响

采用射频磁控溅射法在300W功率下分别镀膜15、30、45min,制备了三种锂离子电池用Sb薄膜负极材料。通过XRD、SEM、ICP、恒电流充放电对三种薄膜材料的结构、形貌及循环性能等进行了表征。实验结果表明,当溅射时间为30min时,Sb薄膜电极具有最好的循环性能,首次嵌锂容量高达640mAh/g,20次循环后容量维持在323mAh/g,容量保持率为51%。     

氮化锡负极薄膜的制备与性能研究

氮化锡是一种新型薄膜锂电池负极材料,采用射频反应磁控溅射法制备氮化锡负极薄膜,系统研究了反应溅射功率和气流比对氮化锡薄膜结构的影响,并对其充放电性能进行了研究.实验结果表明,在溅射功率75 W,N2/(N2 Ar)流量比0.5的条件下所制备氮化锡薄膜结晶度较好,表面致密具有良好的电性能,首次充放电效率超过60%,50次循环后放电比容量仍保持250 mAh/g.     

Sn-Al合金作为锂电池负极材料的掺Ni改性研究

采用磁控溅射的方法,制备了SnAl/Ni双层结构薄膜负极材料,通过XRD检测样品的物相结构,并通过组装半电池测试材料的循环稳定性。XRD结果表明:制备所得的双层结构薄膜样品主要为Ni3Sn2与Cu40.5Sn11的固溶相,不同溅射功率下样品的结晶化程度也不一样。循环性能测试结果表明:Ni溅射功率为100W的样品50次循环后充放电比容量维持在500mAh/g左右,具有较好的循环性能。掺Ni后形成的Sn-Ni-Al负极材料的循环稳定性与结晶化程度有关,结晶化程度越差的样品,由于结晶的不规则性,引入更多的嵌锂间隙位置,便于锂离子的进出,获得越好的循环性能。其次对于Sn-Ni-Al负极,多个二元相固溶时,由于非活性物质对循环时的体积变化具有一定的缓解作用,多个二元相作用叠加,导致循环稳定性优于三元合金相。在合成多元合金负极时,非晶化及多个二元相的固溶都是有利于循环稳定性提高的方法之一。本文为Sn基合金负极的改性研究提供了一个新的手段。     

Sn—Al合金作为锂电池负极材料的掺Ni改性研究

采用磁控溅射的方法,制备了SnAl／Ni双层结构薄膜负极材料,通过XRD检测样品的物相结构,并通过组装半电池测试材料的循环稳定性。XRD结果表明：制备所得的双层结构薄膜样品主要为Ni3Sn2与CuSn的固溶相,不同溅射功率下样品的结晶化程度也不一样。循环性能测试结果表明：Ni溅射功率为100W的样品50次循环后充放电比容量维持在500mAh／g左右,具有较好的循环性能。掺Ni后形成的Sn—NiAl负极材料的循环稳定性与结晶化程度有关,结晶化程度越差的样品,由于结晶的不规则性,引入更多的嵌锂间隙位置,便于锂离子的进出,获得越好的循环性能。其次对于Sn—Ni—A1负极．多个二元相固溶时,由于非活性物质对循环时的体积变化具有一定的缓解作用,多个二元相作用叠加,导致循环稳定性优于三元合金相。在合成多元合金负极时,非晶化及多个二元相的固溶都是有利于循环稳定性提高的方法之一。本文为Sn基合金负极的改性研究提供了一个新的手段。     

电解液对TiO2混合电化学电容器性能的影响

采用溶胶-凝胶法制备掺杂Ni、C改性的TiO2电极材料,并对材料的晶型结构、表面形貌及比容量、充放电效率、循环性能、阻抗、比能量和比功率等性能进行了研究.使用1mol/L MeEt3NBF4/PC电解液的电容器,具有良好的可逆性和稳定的循环性能.在500 mA/g的电流下,比容量为13.40mAh/g,放电比能量为24.12Wh/kg,比功率为1012.03W/kg.     

锡镍合金负极材料的制备及电化学性能研究

在碱性镀液中,用脉冲电镀法制得具有单斜Ni3Sn4结构的锡镍合金负极材料.采用充放电循环实验、X射线衍射光谱法(XRD)、阻抗、环境扫描电镜(SEM)等研究了影响样品电化学性能的因素.实验结果表明,由组成为45 g/L硫酸镍、75 g/L 乙二胺四乙酸二钠、40 g/L酒石酸钾钠、250 g/L焦磷酸钾和40 g/L锡酸钠的镀液制得样品表面含有孔径为200～300 nm的孔洞.在1.5～0.01 V的电压区间,以100 mA/g的电流放电时,该样品第1次循环的放电比容量为764 mAh/g,第50次循环的放电比容量为405 mAh/g.充放电的库仑效率较高.     

Sn2Sb@ C核壳结构负极材料的制备与性能

通过改进的乳液聚合法制备氧化物溶胶,再利用热碳还原技术合成Sn2Sb@C核壳结构负极材料.β-SnSb金属间化合物和Sn单质形成Sn2Sb@C的疏松内核,表面被一层无定形碳包覆.由于疏松的内核结构和外层包覆的无定形碳壳层可缓冲电极充放电过程中的体积变化,核壳复合材料表现出稳定的循环性能.以400 mA/g的电流在0.001 ～2.000 V恒流循环,首次充、放电比容量分别为890 mAh/g和1 375 mAh/g,第30次循环的放电比容量为572 mAh/g.     

Sn/石墨/无定形碳材料的合成及性能研究

采用水热法引入无定形碳,并通过碳热还原合成了Sn/石墨/无定形碳样品。通过X射线衍射法(XRD)和扫描电子显微镜法(SEM)以及充放电测试等方法对形貌、结构和电化学性能进行表征,研究结果表明:无定形碳材料的引入对改善Sn材料的循环性能效果显著,所制备的复合材料样品具有以Sn为中心、无定形碳包围、石墨填充的类核壳的结构,首次可逆比容量为533.2 mAh/g,50次循环之后仍然保持有81.4%的容量。     

磁控溅射镍膜及其性能的研究

采用磁控溅射法在聚对苯二甲酸乙二醇酯(PET)基材上制备了镍薄膜。用扫描电子显微镜(SEM)分析溅射功率、溅射真空室气压等工艺参数对镍薄膜表面形貌的影响;研究了溅射工艺参数与薄膜性能之间的关系。实验结果表明,在室温下,随着溅射气压的增加,沉积速率和粒径都是先增加后又逐渐变小,而薄膜的电阻则随着压强的增大先减小后逐步增大;薄膜的表面粗糙度随着溅射功率的增加而增大;膜层与基材的剥离强度较大且均匀,膜层结合较为牢固,薄膜的耐摩擦性能较为优良。     

Preparation of BaPbO3 Electrode Thin Films by RF Magnetron Sputtering

For electrode materials of Pb(Zr,Ti)O₃ (PZT) thin films in ferroelectric random access memory (FeRAM), various materials have been studied. As new electrode material with which the polarization and fatigue properties are improved, we take notice of barium metaplumbate BaPbO₃ (BPO). Because the BPO contained lead (Pb) and oxygen is conductor that adopted same perovskite structure as PZT. BPO thin films were prepared by rf magnetron sputtering on various substrates. (SiO₂/Si, MgO, Al₂O₃ and Pt-coated substrates), and influence of growth conditions (sputtering gas, rf power, the substrate-heating temperature and post anneals) on crystallization and conductivity were investigated. In case of post anneal after sputtering at room temperature, perovskite single phase was obtained above 400°C. In case of substrate heating while sputtering, without post anneal, perovskite single phase was obtained at 350–500°C on SiO₂/Si substrates (110) preferred orientation BPO films obtained at low temperature, and resistivity of the films decreased at decreasing sputtering temperature. Resistivity of the film at substrate temperature 350°C was 3 × 10^?3 Ω cm. In the case of single crystal substrate, the BPO films were epitaxially grown. Orientation of the films was varied with the sputtering condition. The epitaxial PZT thin films were also grown on the BPO, revealing that PZT(111)[011] //BPO(111)[011] //Pt(100)[011] //MgO(100)[011] and PZT(111)[011] //BPO(111)[011] //Pt(111)[011] //Al₂O₃(001)[100] structures were obtained, and their ferroelectric properties were also evaluated.     

溅射功率对CoFeB薄膜磁与结构特性的影响

以不同功率溅射制备了CoFeB合金薄膜样品并在高真空下退火处理。发现低功率生长的薄膜始终具有磁各向同性,而高功率生长的薄膜随着退火温度的升高,由起始的单轴磁各向异性逐渐向磁各向同性转变。X射线衍射分析也印证了CoFeB薄膜随退火温度的升高,薄膜由非晶态逐渐向结晶态转变。当退火温度高于400℃时,低功率生长的CoFeB样品的矫顽力大于高功率生长薄膜的矫顽力。同时发现低功率生长的CoFeB的(110)峰值高于高功率生长的样品峰值,表明低功率生长的薄膜晶粒尺寸更大。     

Dielectric characteristics investigation of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 ferroelectric thin films

By the radio frequency (RF) magnetron sputtering methods, (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ (BSTZ) ferroelectric thin films were deposited on the Pt/Ti/SiO₂/Si(100) substrates. The crystal structural and microstructure of these thin films were analyzed by means of the XRD, SEM, and AFM. Moreover, the dielectric characteristics were also investigated by the C-V and J-E analyses. The optimal deposition parameters for these BSTZ thin films were: RF power is 160 W, oxygen concentration is 25%, substrate temperature is 580°C, and chamber pressure is 0.075 mPa. Under these optimal deposition conditions, the (111) and (110) oriented polycrystalline of the BSTZ thin films grow easily. And under a bias voltage of 0.5 MV/cm, the dielectric constant and leakage current density of the BSTZ thin films are 191 and 3×10^?8 A/cm², respectively. In addition, under various measured temperatures (0 ～ 80°C) and frequencies (100 kHz ～ 1 MHz), all the dielectric constants remain almost unchanged. Compared to BSTZ thin films reported previously, in this study, the deposited thin films have the advantage of lower leakage current and hence are suitable for the applications of dynamic random access memory.     

Fabrication of Er3+/Pr3+ Co-doped soda-lime glass thin films using RF magnetron sputtering method and optical property characterization

Er^3+/Pr³⁺ co-doped soda-lime glass thin films have been fabricated using RF magnetron sputtering method and their structural and optical properties have been studied. Deposition rate, crystallinity, and composition of glass thin films were investigated by scanning electron microscopy, transmission electron microscopy, and electron probe micro area analysis. Refractive index, birefringence and binding characteristics have been investigated using a prism coupler and X-ray photoelectron spectroscopy. Er³⁺/Pr³⁺ co-doped soda lime glass thin films were prepared by changing substrate temperature (room temp. ∼550^∘C), RF power (90 W–130 W), and Ar/O₂ gas flow ratio at processing pressure of 4 mTorr. Glass thin films could be obtained at the optimized processing condition at 350^∘C, RF power of 130 W, and gas flow of Ar:O₂ = 40:0 with maximum deposition rate of 1.6 μm/h. Refractive index and birefringence increased from 1.5614 to 1.5838 and from 0.000154 to 0.000552, respectively, as the content of Pr³⁺ increased. Binding energy of Pr3d also increased as the content of Pr³⁺ increased.     

Ni65Co35薄膜各向异性磁电阻性能的研究

选用Ｎｉ６５Ｃｏ３５合金靶材，利用射频磁控溅射的方法成膜，采用四控针法测量磁电阻率，分别研究了溅射工艺参数（工艺气压、偏压、功率、基片温度等）对薄膜电阻性能的影响，并对影响的机理作了理论上的分析；另外还对Ｎｉ６５Ｃｏ３５薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ｎｉ６５Ｃｏ３５薄膜的电阻力有较大的影响，适当的溅射参数能有效地提高磁电阻率；Ｎｉ６５Ｃｏ３５薄膜退火处理后     

磁控溅射对薄膜附着力的影响

磁控溅射技术因具有溅射速率高、无污染、可制备各种不同功能的薄膜等优点而得到广泛地应用。综述了薄膜附着力机理,分析了影响薄膜性能的因素,结果表明,薄膜的附着力是影响薄膜性能的主要因素。影响薄膜附着力的因素有:基材的表面清洁度、制备薄膜的各种工艺参数、热处理、原料的纯度等。