脉冲激光沉积技术制备的薄膜传感器的研究

基于脉冲激光沉积（PLD）技术在光寻址电位传感器（LAPS）表面上制备了FeGeSbSe硫系玻璃薄膜，合成的靶材成分为Fe1.2(Ge28Sb12Se60)98.8，在Si/SiO2基质上的金属层为Cr/Au，硫系玻璃薄膜对Fe3＋敏感，显示了良好的重复性和稳定性.在1×10－5～1×10－2 mol/L呈现线性，斜率为(56±2) mV/decade，检测下限为5×10－6 mol/L，当浓度高于1×10－4 mol/L时，响应时间不超过40 s；当低于此浓度时，响应时间不超过2 min.     

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO,as a wide-band gap semiconductor,has recently become a new research fo-cus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy(L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition(PLD) . Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond(ns) pulsed laser abla-tion of ZnO ceramic target,the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.     

脉冲真空电弧离子镀沉积类金刚石薄膜的结构和力学性能研究

利用脉冲真空电孤离子镀技术在3Cr13不锈钢上制备了类金刚石(DLC)薄膜．通过Raman光谱分析了膜的结构特征，采用摩擦磨损试验机测试了薄膜在不同载荷下的摩擦系数，运用划痕仪研究了膜基的结合强度．结果表明：所镀制的薄膜具有典型类金刚石结构特征，膜中ID／IG为1．33；摩擦系数随着载荷的增大而减小，载荷为5N，转速120r／min时的摩擦系数为0．02；Ti过渡层的引入显著地提高了膜基结合力．     

脉冲激光沉积AlN薄膜的工艺优化与机械性能

采用脉冲激光沉积(PLD)方法在单晶Si衬底上制备AlN薄膜.利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)对薄膜的形貌和微观结构进行了分析;采用显微硬度仪、球-盘式磨损试验机和涂层自动划痕仪测试了薄膜的机械性能.通过正交实验,分析了工艺参数与AlN薄膜硬度之间的关系,得出沉积气压是对薄膜硬度影响大的因素,并研究了沉积气压对AlN薄膜表面形貌、微观结构、沉积速率、硬度、结合力和摩擦性能的影响.实验结果表明:所制备的薄膜均为非晶结构,随着沉积气压的上升,薄膜沉积速率降低,薄膜表面粗糙度降低,摩擦系数变小,当气压由0.1Pa增加到1Pa时,薄膜的硬度和耐磨性提高,但是随着气压进一步增大,其硬度和耐磨性下降.     

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer （EDX）, Atomic Force Microscope （AFM） and four-point probe （FPP） to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

Transport properties of LCMO granular films deposited by the pulsed electron deposition technique

By finely controlling the deposition parameters in the pulsed electron deposition process, granular La 2/3 Ca 1/3 MnO 3 (LCMO) film was grown on silicon substrates. The substrate temperature, ambient pressure in the deposition chamber and acceleration potential for the electron beam were all found to affect the grain size of the film, resulting in different morphologies of the samples. Transport properties of the obtained granular films, especially the magnetoresistance (MR), were studied. Prominent low-field MR was observed in all samples, indicating the forming of grain boundaries in the sample. The low-field MR show great sensitive to the morphology evolution, which reaches the highest value of about 40% for the sample with the grain size of about 250 nm. More interestingly, positive-MR (p-MR) was also detected above 300 K when low magnetic field applying, whereas it disappeared with higher magnetic field applied up to 1.5 and 2 Tesla. Instead of the spin- polarized tunneling process being commonly regarded as a responsible reason, lattice mismatch between LCMO film and silicon substrate appears to be the origin of the p-MR     

脉冲激光沉积制备TiN/AlN多层薄膜的研究

采用脉冲激光沉积(PLA)法,在单晶Si试样表面沉积制备了一系列TiN/AlN硬质多层膜,并采用基于免疫算法的免疫径向基函数(IRBF)神经网络对AlN厚度建立预测模型,设计出具有可控调制周期和调制比的TiN/AlN多层膜。X射线衍射(XRD)结果表明,小调制层周期下,过高或过低的工艺条件下薄膜通常为非晶态,适当的工艺条件下TiN、AlN形成具有强烈织构的超晶格柱状晶多层膜;与此相应,纳米多层膜产生了硬度和弹性模量异常增高;随着调制比增加,使纳米多层膜形成非晶AlN层和纳米晶TiN层的多层结构,多层膜的硬度和弹性模量逐渐下降。XPS结果表明,薄膜界面由Ti+4、Ti+3离子组成,N的负二价、三价亚谱结构预示着非当量TiN、AlN的形成。AFM研究显示,薄膜的调制周期均在10~200 nm范围内,且薄膜表面较均匀;当多层薄膜调制周期在50 nm以下时,薄膜的纳米硬度值明显高于TiN和AlN的混合硬度值,达30 Gpa。     

CVD法制备Sb掺杂SnO2薄膜的结构与性能研究

采用化学气相沉积法（CVD）制备了Sb掺杂SnO2薄膜（ATO），研究了Sb掺杂量对ATO薄膜结构和性能的影响。利用X射线衍射（XRD）、扫描电镜（SEM）、X射线光电子能谱（XPS）等分析手段对所制得薄膜的结构、形貌、成分等进行了表征，XRD结果表明在基板温度为665 ℃时能够制得结晶性能较好的多晶薄膜，XPS分析确定掺杂后的Sb以Sb5+离子形式存在。讨论了Sb掺杂量对方块电阻、透射率和反射率等薄膜性质的影响，结果表明,当Sb掺杂量为2%时取得最小方块电阻为7.8 Ω/□,在可见光区薄膜的透射率和反射率随着Sb掺杂量的增加呈下降趋势。最后探讨了Sb掺杂SnO2薄膜的显色特性，认为Sb5+离子的本征吸收是薄膜显色的主要原因。     

射频磁控溅射制备的ZnMgO薄膜结构和光学性能

采用射频磁控溅射法,在石英衬底上制备了Zn1-xMgxO(x=0.00～0.16)薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱等分析了薄膜的结构、形貌和光学特性。结果表明:当x≤0.10时薄膜保持六角纤锌矿结构,而x=0.16时已出现MgO立方相;所有薄膜晶粒大小均匀,在100～150 nm之间;透光率在80%以上;薄膜带隙Eg与Mg含量呈线性关系;薄膜PL谱由较弱的紫外发光峰和较强的可见发光带组成,随Mg含量的增加紫外发光峰蓝移。     

Preparation and Properties of IrO2 Thin Films Grown by Pulsed Laser Deposition Technique

Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.     

Characterization and Electrochemical Properties of LiMn2O4 Thin Films Prepared by Solution Deposition

1 IntroductionThin-filmlithium-ion batteries have attracted greatattention of researchfor possible use inimplantable medi-cal devices , CMOS-based integrated circuits ,radio fre-quency (RF) identification tags for inventory control andanti-theft protection[1],etc. Li Mn2O4thin films , aspromising cathode materials for thin-filmlithium-ion bat-teries, have been prepared by a few methods such aspulsedlaser deposition[2 ,3],electrospraying[4-9],RF mag-netron sputtering[10], laser ablation[11]…     

Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering

The microstructural,optical,and magnetic properties and room-temperature photoluminescence(PL) of Mn-doped ZnO thin films were studied.The chemical compositions were examined by energy dispersive X-ray spectroscopy(EDS) and the charge state of Mn ions in the ZnO:Mn films was characterized by X-ray photoelectronic spectrometry(XPS).From the X-ray diffraction(XRD) data of the samples,it can be found that Mn doping does not change the orientation of ZnO thin films.All the films prepared have a wurtzite stru...     

铝掺杂氧化锌薄膜的电学及光学性能

利用脉冲激光沉积法,在氧气氛下(氧分压为11 Pa)以石英玻璃为基体沉积了铝掺杂氧化锌薄膜。靶材选用锌铝合金靶,沉积过程中基体温度保持在150℃。研究了ZnO薄膜中铝的质量分数与薄膜电学性能和发光性能的关系。结果表明,掺杂铝的质量分数为1.37%时所获得的ZnO薄膜具有最小的电阻率和较强的紫外发光特性。     

脉冲激光沉积TiN/AlN多层膜的微结构与力学性能

采用脉冲激光沉积(LPA)法,在单晶Si表面制备了调制周期为50nm的不同调制比的TiN/AlN多层膜,并研究了调制比对多层膜微结构和力学性能的影响。扫描电镜(SEM)和原子力显微镜(AFM)显示,薄膜的调制比在1～4之间。并且小调制比下薄膜表面的岛密度小,岛面积过大,分布不均匀,相邻岛之间的起伏较大。X射线衍射(XRD)结果表明,小调制比下,AlN相为明显的(002)择优取向,TiN相主要以(200)、(220)形式存在;调制比增大后,AlN相的择优取向减弱,同时伴随着薄膜晶粒的细化及硬度增强,这一研究结果说明,调制比对多层膜的性质有一定的影响,大调制比会导致Al元素在界面处聚集,并与TiN进行合金化后的形成TiAlN结构,进而对薄膜的硬度产生影响。     

Fe-doped epitaxial YBCO films prepared by chemical solution deposition

Railway Engineering Science - YBa2Cu3O7-δ (YBCO)-coated conductors have wide-ranging potential in large-scale applications such as superconducting maglev trains and superconducting electric...     

Structural,optical and electrical properties of Li-doped ZnO thin films influenced by annealing temperature

Li-doped Zn O thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of Zn O films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Lidoped Zn O films annealed at 500-600 ℃ and the p type Zn O films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region.     

脉冲多弧离子镀制备类金刚石薄膜的结构分析

利用脉冲多弧离子镀技术在硅基底上沉积类金刚石薄膜．喇曼光谱和Ｘ 射线衍射分析表明：类金刚石薄膜是无定形结构;利用扫描电镜发现：类金刚石薄膜表面不光滑,石墨颗粒的大小和密度随厚度增加而增加,但薄膜致密．     

脉冲多弧离子镀沉积类金刚石薄膜的牢固度研究

利用脉冲多弧离子镀技术在硅基片上沉积类金刚石薄膜．分析了类金刚石薄膜的牢固度与各种工艺条件的关系．实验结果表明：基片的清洗、基片温度、主回路电压、脉冲频率、烘烤处理都强烈影响类金刚石薄膜的牢固度．同时从理论上分析了利用离子束辅助蒸发工艺可以进一步提高类金刚石薄膜的牢固度     

沉积温度对ZnO薄膜结构形貌及光学性能的影响

以Zn(NO3)2·6H2O为前驱体,采用超声喷雾热解法在玻璃衬底上沉积了ZnO薄膜,采用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外光谱仪(UVS)等对所得ZnO薄膜进行表征,研究了沉积温度对ZnO薄膜的结构、微观形貌及光学性能的影响。结果表明,沉积温度为500℃时所制备的薄膜质量最佳,形成的是六角纤锌矿ZnO结构,且薄膜沿(002)晶面择优取向生长显著,薄膜表面光滑致密,晶粒细小均匀,尺寸在50~60nm。薄膜表现出良好的光学性能,可见光透过率可达87%。