化学机械抛光工艺中的硅片背压力控制与优化

化学机械抛光（Chemical Mechanical Polishing,CMP）技术是最有效的晶圆全局平坦化技术,抛光头是CMP设备中最核心的部件之一,新一代抛光头的设计主要采用区域压力控制技术。硅片抛光质量不仅取决于抛光液,还取决于对硅片抛光压力的精确控制。在CMP抛光工艺过程中各腔室的压力设定值通常并非一致,而且由于柔性弹性隔膜的存在各腔室之间相互耦合。由于耦合现象的存在使得多区腔室压力控制变得复杂化,针对这一耦合现象本文提出了一种用于多区解耦的控制方法,并基于该方法对多腔室进行了系统辨识以及控制参数整定,最后进行了多腔室同时加压实验,实验结果表明该解耦控制方法的可行性以及正确性。     

二氟化氙释放牺牲层多晶硅刻蚀速率研究

该文研究了相关工艺参数对二氟化氙(XeF_2)干法释放多晶硅的释放速率的影响。结果表明,对于薄膜体声波谐振器(FBAR)悬臂结构,腔室压力不变时,随着载气N_2流量的增大,刻蚀速率先增加后减少,刻蚀速率最大值为10.3μm/min;载气N2流量不变时,腔室压力越大,工艺腔室参与刻蚀反应的XeF_2气体的浓度增大,刻蚀速率越大。当腔室压力超过1 200Pa时,随着腔室压力的增加,刻蚀速率的增长率逐渐减小。     

DCS在焦炉集气管压力控制系统中的应用

以实际工程为基础,阐述如何利用控制系统更好地发挥作用,以提高生产效率,提高综合效益。通过DCS系统,实现对集气管压力、蝶阀开度、风机转速范围等的管理和监控,全面协调控制机前吸力及集气管压力。     

功率提取对连续波DF化学激光器腔压的影响

为了研究功率提取对连续波DF化学激光器光腔压力的影响,基于一台小型燃烧驱动连续波DF激光器装置,进行了一系列实验,实验结果显示,随着提取功率的增大,光腔压力逐渐减小。利用一维定常流理论和光腔动力学理论,建立了从燃烧室到光腔出口的一维数学模型,得到光腔压力随比功率的变化关系曲线,取得了与实验较为一致的计算结果,从而给出了功率提取对光腔压力影响的理论解释,同时也验证了数学模型的合理性。数学模型和实验结果同时表明,从光腔中提取功率,光腔压力将有一定程度的下降,将实验条件参量代入模型计算,得出比功率为50J/g时,光腔压力比无功率输出时下降约7.4%。     

激光器腔镜变形分析及热管冷却方法研究

激光器运行中,腔镜的变形造成激光输出功率下降和光束质量变坏,大大制约了高功率激光器性能的提高。通过对激光器腔镜吸热产生的热变形及冷却流体对镜片压力变形分析,提出了热管冷却腔镜的方法,介绍了热管冷却原理和热管在导热方面的优点,设计了热管冷却腔镜方案,为有效控制强激光系统中镜片表面变形提供了有效途径。     

多状态设备驱动器(MSDD)的特殊应用

利用多状态设备驱动器的潜在功能,将其应用于多设备系统的控制中.并用液控蝶阀的控制来检验其功能的完整性和逻辑的可靠性.     

选择区域外延生长中掩模介质表面Ga原子的迁移特性

选择区域外延生长(SAG)技术是微纳尺度GaN基发光器件的主要制备方法之一。在选择区域外延生长中,Ⅲ族金属原子在掩模介质表面的迁移行为对微纳器件的形貌及特性有非常重要的影响。利用金属有机化学气相沉积(MOCVD)系统研究了选择区域外延生长中Ga原子在掩模介质表面上的迁移特性,得到了不同反应腔压力和生长温度下Ga原子在掩模介质表面的迁移长度,且在保持其他生长条件不变的情况下,适当降低反应腔压力或提高生长温度可提高Ga原子的迁移长度。     

HydroCOM系统在渣油加氢新氢压缩机的应用

中国石油四川石化300万吨/年渣油加氢脱硫装置2014年1月份开工投产。装置在反应系统压力控制方面采用了新氢压缩机Hydro COM系统无级变速调节,从而优化了反应系统压力控制,减少新氢压缩机出口氢气返回,节省能耗,同时改善新氢压缩机机组运行的稳定性。     

脉冲等离子体对超燃凹腔燃料喷流的影响

为了研究在脉冲控制方式下,准直流横向放电等离子体对超燃冲压发动机燃烧室燃料喷流流场的影响,构建了脉冲控制下准直流横向放电等离子体模型,分析了不同脉冲控制频率下等离子体对凹腔喷流流场特征结构、燃烧室总压损失、喷流下游掺混效率的影响。结果表明:脉冲控制模式下,等离子体能够有效控制喷流上游分离激波位置与强度、幅度,导致凹腔流场参数周期性波动,使得燃料与主流的掺混效率提高,与定常控制方式相比脉冲控制方式能够减小压力损失。     

生产型GaN MOCVD(6片机)设备中的压力控制技术

反应室压力控制稳定是保证工艺重复性和陡峭界面生长的关键之一。分析了影响压力控制精度的主要因素,介绍了采用软件、硬件结合的方法,通过闭环压力控制、差压控制、高精度流量控制和补偿气路设计等技术手段,实现高精度压力稳定性和无扰动气体切换,首次在国产生产型GaN-MOCVD(6片机)设备上生长出高质量的多量子阱蓝光LED外延材料。     

反应堆压力容器主螺栓超声检测控制系统的设计与实现

核电站反应堆压力容器主螺栓是重要的受力易损部件,必须对其进行定期的缺陷检测。文中介绍了自主研发的主螺栓超声检测控制系统的构成,描述了运动控制、水位控制的实施方案,对控制算法进行了设计,并通过软件处理程序实现了全部控制功能。事实证明,该控制系统极大方便了对反应堆压力容器主螺栓的役前和在役超声检测工作。     

A study of parasitic reactions between NH3 and TMGa or TMAI

The growth of AlGaN using organometallic vapor phase epitaxy has been studied as a function of reactor pressure in a horizontal reactor. At atmospheric pressure, GaN with growth efficiency comparable to that of GaAs in the same reactor is obtained. In addition, the GaN growth efficiency changes little at different reactor pressures. These results indicate that the parasitic reaction between TMGa and NH₃ is not substantial in the reactor used in this study. On the other hand, A1N growth at atmospheric pressure has not been possible. By lowering the reactor pressure below 250 Torr, A1N deposition is achieved. However, the growth efficiency decreases at higher reactor pressures and higher growth temperatures, indicating that a strong parasitic reaction occurs between TMAI and NH₃. For the ternary AlGaN, lower pressure also leads to more Al incorporation. The results indicate that parasitic reactions are much more severe for TMAI+NH3 than for TMGa+NH₃.     

常压微波等离子体反应器的设计与实现

本文设计了一个基于BJ26矩形波导的常压微波等离子体反应器。微波反应器对于等离子体的产生起关键性作用,本设计中采用了矩形压缩波导结构。首先运用Ansoft HFSS仿真软件对反应器进行了模拟计算,得到不同矩形压缩波导腔体内的电场分布,从而对腔体进行了优化设计,最终制作了常压微波等离子体反应器。将反应器安装在微波系统中,获得了频率为2.45GHz功率可调的稳定的微波等离子体。     

Toward observable UHVCVD: Modeling of flow dynamics and AAS partial pressure measurement implementation

Ultra-high vacuum chemical vapor deposition is a thin film deposition process that features excellent film purity, but is sensitive to the processing variations (such as, the precursors and their dispensers, the reactor’s initial condition, etc.). In this paper, we present the design of a ultra-high vacuum chemical vapor deposition reactor with in situ partial pressure atomic absorption spectroscopy measurement that improves reproducibility and observability of such a process. Our main contributions are: (i) a conceptual control systems design of ultra-high vacuum chemical vapor deposition; (ii) atomic absorption spectroscopy based sensor design for the real-time in situ partial pressure measurements; (iii) a flux dynamical model; (iv) experimental reactor design; and (v) experimental validation of model components and the atomic absorption spectroscopy measurement technique. Our results show that the proposed sensor systems are able to provide real-time measurements of the partial pressure inside the reactor and our proposed flux dynamical model agrees with the measured partial pressure. The latter allows us to use it in the design of model-based output feedback control of the partial pressure.     

Improved control strategy on single-phase current-fed interactive inverter

The single-phase PWM current-fed inverter has some feasible advantages for utility-interactive systems. In particular, it is more suitable for the non-isolated type of utility-interactive system topology that is widely used for residential photovoltaic power generation systems in Japan. But, this sort of inverter has a significant disadvantage. The output current of the inverter includes large harmonic components when its smoothing reactor is not large enough to eliminate its current ripple component. This paper presents a new control strategy to reduce sufficiently the harmonic component of the single-phase current-fed PWM inverter, even when the ripple current in the smoothing reactor is large. The principle of the proposed control strategy for this inverter system is described and its simulation results are evaluated.     

Study of etch rate characteristics of SF6/He plasmas byresponse-surface methodology: effects of interelectrode spacing

The characteristics of SF₆/He plasmas which are used to etch Si₃N₄ have been examined with experimental design and modeled empirically by response-surface methodology using a Lam Research Autoetch 480 single-wafer system. The effects of variations of process gas flow rate (20-380 sccm), reactor pressure (300-900 mtorr). RF power (50-450 W at 13.56 MHz), and interelectrode spacing (8-25 mm) on the etch rates of LPCVD (low-pressure chemical vapor deposition) Si₃N₄, thermal SiO₂, and photoresist were examined at 22±2°C. Whereas the etch rate of photoresist increases with interelectrode spacing between 8 and 19 mm and then declines between 19 and 25 mm, the etch rate of Si₃N ₄ increases smoothly from 8 to 25 mm, while the etch rate of thermal SiO₂ shows no dependence on spacing between 8 and 25 mm. The etch rates of all three films decrease with increasing reactor pressure. Contour plots of the response surfaces for etch rate and etch uniformity of Si₃N₄ as a function of spacing and flow rate at constant RF power (250 W) display complex behavior at fixed reactor pressures. A satisfactory balance of etch rate and etch uniformity for Si₃N₄ is predicted at low reactor pressure (~300 mtorr), large electrode spacing (12-25 mm), and moderate process gas flow rates (20-250 sccm)     

电信运营商DW/BI系统发展探讨

随着大数据时代的来临,越来越多的企业认识到数据作为其核心资产所蕴含的价值。数据仓库/商业智能（DW/BI）系统作为数据服务平台,在发挥数据价值上起到了至关重要的作用。国内三大运营商已经开始或者即将开始建设企业级集中化DW/BI系统。据此从数据仓库技术选型、数据标准化实施策略以及提升自主分析能力3个方面对DW/BI系统的发展提出了建议。     

一种低功耗CPU卡的设计

地址总线的功耗是整个CPU卡电路系统功耗的重要来源.降低地址总线上的翻转率可以有效降低整个系统的功耗.文章在分析CMOS电路功耗和几种总线编码的基础上,提出了一种改进的T0-BI编码,并将此种编码应用于CPU卡用芯片的设计.结果表明,采用此种编码可以有效地降低CPU卡电路的功耗.     

反应离子刻蚀PMMA的各向异性刻蚀研究

研究目的是优化Ni掩膜PMMA RIE的刻蚀参数，在氧刻蚀气体中加入表面钝化性气体CHF3，以较快的刻蚀速率获得垂直的侧壁和最小的掩模钻蚀。采用平行板结构的反应离子刻蚀机刻蚀，研究了刻蚀气压，CHF3/O2比率和刻蚀温度对垂直、侧向刻蚀速率和PMMA微结构形貌的影响。试验表明：当CHF3含量大于50%或O2工作气压较低时，会显著影响RV/RL比，当RV/RL比大于8时，试样呈现出完全各向异性刻蚀。     

激光光谱法等离子体裂解甲烷深度的实验研究

利用甲烷的强吸收振动带v3,采用吸收光谱法通过测量3391nm He-Ne激光穿过等离子体反应管的透射光强来考察甲烷完全裂解时间随放电电流和气压的变化规律.实验结果表明:对实验所用的封离系统,在直流和高频(33KHz)放电条件下,所得的甲烷裂解率分别为96%和98%.甲烷完全裂解的时间随气压的增加而增加,随放电电流的增大而减小;裂解效率直流放电比高频放电的高.