Compact Analytical Model of Double Gate Junction-less Field Effect Transistor Comprising Quantum-Mechanical Effect

We investigate the quantum-mechanical effects on the electrical properties of the double-gate junctionless field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.     

A new quantum effect model for practical device simulation

An increase in the complexity of VLSI design, especially in process integration, is leading to increased demands for technology CAD (TCAD). The quantum mechanical (QM) effect becomes very important with an increase in the channel impurity concentration. Several models for the QM effect have been proposed. However, it has been reported that these models had some problems. In this paper, a new QM model for a conventional device simulator is proposed. Applications of this model to NMOS and PMOS including the buried-channel are examined     

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs

In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the multi-subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.     

Simulation of quantum effects along the channel of ultrascaledSi-based MOSFETs

Quantum transport simulations, including phase-breaking scattering, are used to observe the transition from classical to quantum transport in ultrascaled Si and SiGe heterostructure MOSFETs in order to gauge the potential effectiveness of semiclassical and pure phase-coherent quantum transport models as this transition is approached. It is shown that semiclassical models of transport along the length of the channel (as opposed to normal to the channel, where the importance of quantum mechanical effects has long been recognized) may remain reliable for channel lengths down to roughly 10 nm and perhaps beyond, and likely more reliable at this point than phase-coherent quantum transport simulations even when much of the transport is coherent/ballistic. As coherent transport effects within the channel eventually do become significant for ballistic carriers, the phase-breaking scattering rate, itself, also becomes a nonlocal function of the carrier's kinetic energy placing further demands on simulation. Simulations also reaffirm that for injection into the channel, the modeling of quantum transport effects such as tunneling, particularly in Si-SiGe heterostructure MOSFET's, will be important in much longer devices. However, even for this purpose it may not be possible to neglect the effects of inelastic scattering that can provide additional tunneling "paths."     

Y型量子线中电子弹道输运性质

对有限长Y型量子线中的电子弹道输运性质进行了量子力学计算．该有限长的量子结构分与两半无限长的量子通道相连,当施加一偏压时,量子通道分别可作为电子的发射极和收集极．采用了转移矩阵方法和截断近似技术．计算结果表明,当结构对于x轴对称时,在入射电子的能量小于量子结构的第一个横向本征模时,电导存在着两个峰;当结构对于x轴不对称时,电导则存在着三个峰．进一步分析表明,这些峰来自于电子共振隧穿量子结构中的量子束缚态．该结构对于经典粒子来说是非束缚体系．当结构对于x轴对称时,较高能级是双重简并的,而当结构对于x轴不对称时,该能级的简并度消除．     

Quantized conductance in silicon quantum wires

The results of studying the quantum-mechanical staircase for the electron and hole conductance of one-dimensional channels obtained by the split-gate method inside self-assembled silicon quantum wells are reported. The characteristics of quantum wells formed spontaneously between the heavily doped δ-shaped barriers at the Si(100) surface as a result of nonequilibrium boron diffusion are analyzed first. To this end, secondary-ion mass spectrometry, and also the detection of angular dependences of the cyclotron resonance and ESR, is used; these methods make it possible to identify both the crystallographic orientation of the self-assembled quantum wells and the ferroelectric properties of heavily doped δ-shaped barriers. Since the obtained silicon quantum wells are ultrathin (～2 nm) and the confining δ-shaped barriers feature ferroelectric properties, the quantized conductance of one-dimensional channels is first observed at relatively high temperatures (T≥77 K). Further, the current-voltage characteristic of the quantum-mechanical conductance staircase is studied in relation to the kinetic energy of electrons and holes, their concentration in the quantum wells, and the crystallographic orientation and modulation depth of electrostatically induced quantum wires. The results show that the magnitude of quantum steps in electron conductance of crystallographically oriented n-type wires is governed by anisotropy of the Si conduction band and is completely consistent with the valence-valley factor for the [001] (G ₀=4e ²/h and g _v=2) and [011] (G ₀=8e ²/h and g _v=4) axes in the Si(100) plane. In turn, the quantum staircase of the hole conductance of p-Si quantum wires is caused by independent contributions of the one-dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square-section quantum wires in the doubling of the quantum-step height (G ₀=4e ²/h), except for the first step (G ₀=2e ²/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the temperature-and field-related inhibition of the quantum conductance staircase is demonstrated in the situation when kT and the energy of the field-induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split-gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of electrons is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. It is shown in the concluding section of this paper that detection of the quantum-mechanical conductance under the conditions of sweeping the kinetic energy of the charge carriers can act as an experimental test aiding in separating the effects of quantum interference in modulated quantum wires against the background of Coulomb oscillations as a result of the formation of QDs between the delta-shaped barriers.     

Simulation of quantum transport in quantum devices with spatiallyvarying effective mass

The authors report progress in quantum-mechanical simulation based on the Wigner function model. An exact nonlocal formulation in the Wigner representation due to a spatially varying effective mass and its discretization for numerical calculation are discussed. To verify the validity of such a formulation, the current-voltage characteristics of resonant tunneling diodes are simulated to compare with the conventional Wigner function model. The authors also point out the importance of self-consistent calculation in the electrostatic potential for precise device simulation. The emphasize that the Wigner function model is superior to the alternative method based on the transmission probability method even for the static simulation of quantum transport     

Cryptographic distinguishability measures for quantum-mechanicalstates

This paper, mostly expository in nature, surveys four measures of distinguishability for quantum-mechanical states. This is done from the point of view of the cryptographer with a particular eye on applications in quantum cryptography. Each of the measures considered is rooted in an analogous classical measure of distinguishability for probability distributions: namely, the probability of an identification error, the Kolmogorov distance, the Bhattacharyya coefficient, and the Shannon (1948) distinguishability (as defined through mutual information). These measures have a long history of use in statistical pattern recognition and classical cryptography. We obtain several inequalities that relate the quantum distinguishability measures to each other, one of which may be crucial for proving the security of quantum cryptographic key distribution. In another vein, these measures and their connecting inequalities are used to define a single notion of cryptographic exponential indistinguishability for two families of quantum states. This is a tool that may prove useful in the analysis of various quantum-cryptographic protocols     

Impact of device physics on DG and SOI MOSFET linearity

The influence of different physical mechanisms on MOSFET linearity is analyzed using 2D TCAD device simulations. In particular, the RF linearity performance of 50 nm gate length SOI and DG-MOSFETs are investigated and compared with traditional bulk MOSFETs. We employ the hydrodynamic (HD) transport model to account for non-equilibrium carrier dynamics and the density gradient approximation for quantum mechanical effects. Impact ionization of channel carriers and self-heating effect (SHE) are also accounted for in the thin-body devices. Our results disclose the relationship between various aspects of device physics and linearity. We show that linearity performance is particularly sensitive to non-local effects and are lowered due to SHE. Quantum mechanical effects appear to have a small positive impact on linearity. Drift-diffusion approximation is found to be unreliable for linearity analysis of DG MOSFETs due to large overestimation from this model. We also observe that linearity has an anomalous monotonous dependence on the ambient temperature.     

Monte Carlo simulations of double-gate MOSFETs

A fullband Monte Carlo simulator has been used to analyze the performance of scaled n-channel double-gate (DG) MOSFETs. Size quantization in the channel is accounted for by using a quantum correction based on Schrodinger equation. Scattering induced by the oxide interface is included with a model calibrated with measurements for bulk devices. The detailed self-consistent treatment of quantum effects leads to several interesting observations. We observe that the sheet charge in DG devices does not decrease as much as expected in bulk devices when quantum-mechanical effects are included. The average carrier velocity in the channel is also somewhat reduced by quantum effects, as a second-order effect. In the test cases studied here, application of quantum effects causes a reduction in simulated current not exceeding 15%. In a DG structure, quantum effects tend to concentrate the charge density in the center of the channel, where transverse fields are lower. Because of this, interface scattering appears to be less pronounced when quantum effects are included.     

Uncertainty, Monogamy, and Locking of Quantum Correlations

Squashed entanglement and entanglement of purification are quantum-mechanical correlation measures and are defined as certain minimizations of entropic quantities. In this paper, we present the first nontrivial calculations of both quantities. Our results lead to the conclusion that both measures can drop by an arbitrary amount when only a single qubit of a local system is lost. This property is known as “locking” and has previously been observed for other correlation measures such as accessible information, entanglement cost, and logarithmic negativity. In the case of squashed entanglement, the results are obtained using an inequality that can be understood as a quantum channel analogue of well-known entropic uncertainty relations. This inequality may prove a useful tool in quantum information theory. The regularized entanglement of purification is known to equal the entanglement needed to prepare many copies of a quantum state by local operations and a sublinear amount of communication. Here, monogamy of quantum entanglement (i.e., the impossibility of a system being maximally entangled with two others at the same time) leads to an exact calculation for all quantum states that are supported either on the symmetric or on the antisymmetric subspace of a$dtimes d$-dimensional system.     

Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials

We developed a quantum-mechanical simulation code to study subthreshold performances and carrier quantum confinement in double-gate MOSFETs with high-mobility channel materials like Ge and III-V semiconductors. The code is based on the two-dimensional and self-consistent numerical solving of Poisson and Schrödinger equations coupled with the drift-diffusion transport equation. We systematically evaluate and analyze drain-induced barrier lowering and carrier quantum confinement in Si, Ge, In_0.53Ga_0.47As and GaAs based double-gate devices. Results show that SCEs in In_0.53Ga_0.47As and GaAs devices are lower than in Si and Ge counterparts. However, when the channel film thickness is reduced, carrier confinement is found to strongly impact double-gate device operation with high-mobility materials owing to their low confinement effective mass in the lowest energy valley.     

二维H型四终端量子点阵列的量子输运

利用一个基于紧束缚模型的散射区格点上能量波动的二终端系统的透射和反射系数的一般计算方法,然后提出了基于实空间格点的H型四终端量子点阵列的系统,将其转化成二终端量子点阵列模型去探讨,通过利用实空间格林函数,计算了H型四终端量子点阵列的透射率,研究其量子输运问题。     

Under-barrier leakage of the quantum-mechanical current density owing to the interference of electron waves in the 2D semiconductor nanostructures

The theoretical analysis of the under-barrier leakage of the local quantum-mechanical current density in the 2D semiconductor nanostructures that represent narrow and wide rectangular quantum wells sequentially located along the propagation direction of electron wave is presented. The wave arrives from the narrow quantum well at a semi-infinite rectangular potential barrier with height V ₀ in the wide quantum well. Under certain conditions, the exponentially decaying and coordinate-dependent leakage of the local quantum-mechanical current density under barrier is allowed for the waves with energies of less than V ₀ due to the interference of electron waves in such a nanostructure.     

Dynamical simulation of quantum-well structures

For the design and development of optical semiconductor devices based on quantum-well structures, the investigation of saturation phenomena is necessary for high optical power operation. By applying stationary physical models, nonlinear effects cannot be described adequately; hence, transient models are important for an accurate analysis. By utilizing transient models, saturation phenomena, signal delays, and distortions can be investigated. For the analysis of integrated optoelectronic devices, such as lasers and modulators, transient transport or density matrix equations for carriers and photons and the Poisson equation have to be solved self-consistently. A transient model which is useful for the investigation of a wide range of optoelectronic applications is presented. Quantum optical phenomena are included by applying the interband density matrix formalism in real-space representation, where the Coulomb singularity is treated exactly in the limits of the discretization. As we focus on electroabsorption modulators, a drift-diffusion model adequately approximates the transport properties. Here, quantum effects are considered by a quantum correction, the Bohm potential. The model is applied to investigate transport effects in InP-based waveguide electroabsorption modulators including strained lattices     

Single-electron device simulation

A three-dimensional (3-D) simulator is presented which uses a linear-response approach to simulate the conductance of semiconductor single-electron transistors at the solid-state level. The many-particle groundstate of the quantum dot, weakly connected to the drain and the source reservoir, is evaluated in a self-consistent manner including quantum-mechanical many-body interactions. A transfer-Hamiltonian approach is used to compute the tunneling rates for the coupling of the quantum dot levels to the macroscopic reservoirs on the basis of realistic barrier potentials. The simulator was applied to a GaAs/AlGaAs example structure. We discuss the conductance characteristic and the capacitances as well as the microscopic structure of the quantum dot     

Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations

The theoretical calculation of the electronic structure of any constituent materials is the first step toward the interpretation and understanding of experimental data and reliable device design. This is essentially true for nanoscale devices where both the atomistic granularity of the underlying materials and the quantum-mechanical nature of charge carriers play critical roles in determining the overall device performance. In this paper, within a fully atomistic and quantum-mechanical framework, we investigate the electronic structure of wurtzite InN quantum dots (QDs) self-assembled on GaN substrates. The main objectives are threefold: 1) to explore the nature and the role of crystal atomicity, strain field, and piezoelectric and pyroelectric potentials in determining the energy spectrum and the wave functions; 2) to address the redshift in the ground state, the symmetry lowering and the nondegeneracy in the first excited state, and the strong band mixing in the overall conduction-band electronic states, which is a group of interrelated phenomena that has been revealed in recent spectroscopic analyses; and 3) to study the size dependence of the internal fields and its impact on the electronic structure as a whole. We also demonstrate the importance of 3-D atomistic material representation and the need for using realistically extended substrate and cap layers (multimillion-atom modeling) in studying the built-in structural and electric fields in these reduced dimensional QDs. The models used in this study are as follows: 1) valence-force-field Keating model for atomistic strain relaxation; 2) 20-band nearest neighbor sp ³ d ⁵ s* tight-binding model for the calculation of single-particle energy states; and 3) microscopically determined polarization constants in conjunction with an atomistic 3-D Poisson solver for the calculation of piezo- and pyroelectric contributions.     

Optimal tight frames and quantum measurement

Tight frames and rank-one quantum measurements are shown to be intimately related. In fact, the family of normalized tight frames for the space in which a quantum-mechanical system lies is precisely the family of rank-one generalized quantum measurements on that space. Using this relationship, frame-theoretical analogs of various quantum-mechanical concepts and results are developed. The analog of a least-squares quantum measurement is a tight frame that is closest in a least-squares sense to a given set of vectors. The least-squares tight frame is found for both the case in which the scaling of the frame is specified (constrained least-squares frame (CLSF)) and the case in which the scaling is chosen to minimize the least-squares error (unconstrained least-squares frame (ULSF)). The well-known canonical frame is shown to be proportional to the ULSF and to coincide with the CLSF with a certain scaling     

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

2D TCAD Sentaurus simulations based on Drift-Diffusion transport are performed to identify the modeling parameters that crucially affect the reliability characteristics of AlGaN/GaN HEMT devices, demonstrated by their effects on the gate leakage characteristic. The behavioural nature and impact of each parameter on the leakage performance is discussed. Schottky gate tunneling and trapping effects within the structure are two major reliability issues that modulate the leakage characteristic. Hence, their contributions are precisely modeled. A simulation methodology is presented to recognize the relative control of individual parameters on distinct regions of the leakage characteristic. This modeling approach is demonstrated for a GaN HEMT technology and can be further applied to facilitate reliability comparisons across different device technologies. This validates TCAD simulation to be an effective aiding tool in reviewing and interpreting GaN HEMT reliability performance and design choices.