A 3.3 mW K-Band 0.18-μ m 1P6M CMOS Active Bandpass Filter Using Complementary Current-Reuse Pair

This letter presents a low-power active bandpass filter (BPF) at K-band fabricated by the standard 0.18 mum 1P6M CMOS technology. The proposed filter is evolved from the conventional half-wavelength resonator filter, using the complementary-conducting-strip transmission line (CCS TL) as the half-wavelength resonator. Furthermore, the complementary MOS cross-couple pair is proposed as a form of current-reuse scheme for achieving low-power consumption and high Q-factor simultaneously. The simulated results indicate that the Q-factor of the proposed half-wavelength resonator can be boosted from 9 to 513 at 25.65 GHz compared with the resonator enhanced by the nMOS cross-couple pair to Q-factor of merely 43 under the same power consumption. The proposed active BPF of order two occupies the chip area of 360 mum times 360 mum without contact pads. The measured results show that the center frequency of the active BPF is 22.70 GHz and a bandwidth of 1.68 GHz (7.39 %). The measured P_{1 dB} and noise figure at 22.70 GHz are -7.65 dBm and 14.05 dB, respectively. There is a 56.84 dB suppression between the fundamental tone and the second harmonic when the input power is -11.26 dBm. While showing 0 dB loss and some residual gain, the active BPF consumes 2.0 mA at 1.65 V supply voltage with maximum of 0.15 dB insertion loss and 9.96 dB return loss at pass band.     

40 GHz compact TFMS meander-line bandpass filter on silicon substrate

Presented is a compact millimetre-wave bandpass filter using a thin-film microstrip meander line on standard 0.18 mum CMOS silicon substrate without any post-processing step yet still reducing the substrate loss and crosstalk to a large extent. To miniaturize overall circuit size, a half-wavelength resonator is constructed in meander-line configuration and its resonant frequency is designed to be 40 GHz. The prototype single-resonator bandpass filter occupies a circuit area of 210 times 210 mum on silicon. Measured insertion loss is 2.5 dB, which agrees well with the design value in the simulations.     

A monolithic CMOS 2368/spl plusmn/30 MHz transformer based Q-enhanced series-C coupled resonator bandpass filter

A three-pole 0.1 dB ripple Chebyshev series-C coupled resonator bandpass filter with transformer-based Q-enhancement is presented. This Q-enhancement technique compensates resonator loss and produces a flat passband response with low insertion loss. The compensation scheme uses frequency-dependent negative resistance to compensate frequency-dependent inductor losses, avoiding passband distortion, which is a problem with cross-coupled negative resistance circuits. Fabricated in 0.18 /spl mu/m CMOS, the measured filter center frequency is 2368 MHz with a 60 MHz (3 dB) bandwidth, including probe pad and connecting trace parasitic losses. The filter draws 5.84 mA at 1.5 V, and the die area is 1.5 mm/spl times/1.5 mm.     

Design of low-voltage cmos low-noise amplifier with image-rejection function

A new design is presented that combines a low-noise amplifier (LNA) with an on-chip filter instead of external filter to eliminate image signal based on TSMC 0.18 mum CMOS technology. The fully integrated 5.9 GHz LNA exhibits 15.2 dB gain, 3.2 dB noise figure, better than -15 dB input and output return loss, and -27 dB image rejection. The circuit operates at a supply voltage of 1 V and consumes only 6.1 mW power.     

Power efficient Ka-band low phase noise VCO in 0.13 μm CMOS

A 27 GHz cross-coupled LC voltage controlled oscillator (VCO) using a standard 0.13 mum CMOS technology is presented. The VCO using a high-Q LC resonator with a micro-strip inductor (mu-strip L) provides a phase noise of -113 dBc/Hz at a 1 MHz offset frequency. The figure - of-merit (FoM) is -194.6 dBc/Hz. To obtain high output power, it also uses a common source amplifier as a buffer and it shows the output power of -3.5 dBm at an oscillation frequency of 26.89 GHz. This is believed to be the lowest phase noise and FoM with the highest output power of a millimetre-wave VCO in CMOS technology.     

A 60-GHz Millimeter-Wave Bandpass Filter Using 0.18-μm CMOS Technology

This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-mum standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148times1.49 mm². The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband.     

基于硅基IPD技术的新型S波段带通滤波器设计

将无源器件内埋或集成在封装基板中,是射频系统级封装(SIP)的小型化面临的首要问题之一.基于硅基集成无源器件(IPD)技术,借鉴经典的级联四角元件(CQ)滤波器拓扑,提出一种四电感互耦结构.利用集总LC谐振器和分布式互感耦合原理,在交叉耦合节点处以加载电容的方式引入频变耦合节点,实现了一款新颖的S波段四阶带通滤波器,尺寸仅为1.5 mm×l mm,其通带内最小插损约为-3.5 dB@ 2.8 GHz,-1 dB带宽为2.63～2.96 GHz,在带外形成两个传输零点位置:-41.5 dB@2.29 dB@3.34 GHz.该滤波器结构形式新颖,可以整体集成到硅基板中,为射频系统级封装一体化集成提供支持.     

Design of fractal-based CMOS bandpass filter for WirelessHD system

We proposed a fractal-based dual-mode bandpass filter (BPF) using a standard CMOS process for application of 60 GHz WirelessHD system. We first investigated the effect of coupling feedlines of I/O ports set at different layer of M3 and M4 layer on the transmission loss of the resonator, and verified the nature coupling of fractal-based dual-mode filter. Experimental result shows that the designed filter with a fractional-bandwidth (FBW) of 23%, an insertion loss about 7 dB and return loss larger than 10 dB. Additionally, two transmission zeros are appeared at the passband edges, thus much improve the selectivity of the proposed CMOS BPF. The result indicates that fractal-based structure is feasible and can meet the requirement in the mm-wave application.     

A W-Band Air-Cavity Filter Integrated on a Thin-Film Substrate

In this letter, a W-band air-cavity filter has been developed on a thin-film substrate using a lossy silicon substrate as a base plate, which is suitable for a mm-wave system-on-package. The lossy silicon suppresses a parasitic substrate mode excited in a thin-film substrate, while a coupling loss between a transmission line and a resonator is minimized by etching the backside of the lossy silicon substrate underneath the coupling area. In the backside etching process, 70 mum of silicon was left for mechanical support of the thin-film substrate. The resonator was fabricated using a low-cost silicon micromachining technique and was flip-chip integrated on a thin-film substrate. The fabricated air-cavity resonator showed an unloaded Q of 851 at a resonant frequency of 94.18 GHz. Improvement in the coupling loss by the backside etching process was verified with measurement results. The fabricated filter exhibited an insertion loss of 1.75 dB and a return loss better than 14.5 dB with a 1.3% 3 dB fractional bandwidth at a center frequency of 93.8 GHz.     

一种具有陡峭边带的宽带带通滤波器设计

基于一种新型的多模谐振器设计了一款宽带带通滤波器,该多模谐振器由鱼骨形谐振器及中心加载倒T形谐振器构成。滤波器的中心频率位于2.47 GHz,相对带宽为100%。滤波器具有极高的频率选择性,其边带滚降速度分别为232 dB/GHz和168 dB/GHz。此外,滤波器还具有较低插入损耗0.4 dB,紧凑的电路尺寸以及宽阻带抑制能力。     

Coupled loops at 20 GHz for stacked planar circuits

Differential planar coupled loops are examined as a method of integrating silicon electronics with passive elements on low-loss microwave laminates. Two test structures are examined which abut planar loops on a CMOS chip to similarly sized loops on a low-loss microwave laminate. The insertion loss of a pair of the 1000times1000 mum loops was measured to be approximately 3 dB at 20 GHz, and the loss between the 700times300 mum loops was measured to be approximately 6 dB at 20 GHz     

Parallel coupled-line bandpass filter with branch-line shape for g-band frequency

A parallel coupled-line planar bandpass filter (BPF) with branch-line shape using coplanar waveguide technology on GaAs substrate is presented. The unit parallel coupled-line BPF utilises a parallel coupled-line resonator with an open-ended stub which has suppression response of spurious band. Four unit parallel coupled-line BPFs are integrated with branch-line shape and open-circuit stubs on input and output ports are also integrated for improvement of rejection performance. The proposed fourth-order filter was fabricated on GaAs substrate with dielectric thickness of 50 m and gold thickness of 1.2 mum. The fabricated fourth-order BPF shows a 3 dB bandwidth from 177 to 209 GHz frequency range with insertion loss of 6.5 dB, rejection of 38 dB and return loss better than 12 dB. It has a high resolution fractional bandwidth of 17%.     

Micromachined V-band CMOS bandpass filter with 2 dB insertion loss

A low-insertion-loss V-band CMOS bandpass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (vz1) and the high-frequency transmission-zero (vz2) can be tuned by the series-feedback capacitor Cs and the parallelfeedback capacitor Cp, respectively. To reduce the substrate loss, the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, this filter achieved insertion loss (1/S21) lower than 3 dB over the frequency range 52.5?76.8 GHz. The minimum insertion loss was 2 dB at 63.5 GHz, the best results reported for a V-band CMOS bandpass filter in the literature.     

70 GHz Folded Loop Dual-Mode Bandpass Filter Fabricated Using 0.18 $mu$ m Standard CMOS Technology

This letter presents the design and implementation of a 70 GHz millimeter-wave compact folded loop dual-mode on-chip bandpass filter (BPF) using a 0.18 $mu$m standard CMOS process. A compact BPF, consisting of such a planar ring resonator structure having dual transmission zeros was fabricated and designed. The size of the designed filter is 650$,times,$ 670 $mu$ m$^{2}$ . Calculated circuit model, EM simulated and measured results of the proposed filter operating at 70 GHz are shown in a good agreement and have good performance. The filter has a 3-dB bandwidth of about 18 GHz at the center frequency of 70 GHz. The measured insertion loss of the passband is about 3.6 dB and the return loss is better than 10 dB within the passband.      

DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors

A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18 mum CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8plusmn0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05times0.37 mm ² chip size including RF pads     

基于阶梯阻抗发夹谐振器的小型低通滤波器

提出一种基于阶梯阻抗发夹谐振器的小型化微波低通滤波器,该滤波器仅由包含一节微带线的阶梯阻抗发夹谐振器构成。设计结果表明,滤波器3dB通带从DC(Direct Current)到2GHz,回波损耗优于10dB,且插入损耗从DC到1.7GHz时优于0.5dB,带外抑制从2.9～4GHz优于20dB。仿真结果和实验结果吻合良好。这种滤波器尺寸小,易制造,且具有陡峭的截止频率响应特性,可应用于许多微波系统中。     

一种具有边带陡峭特性的超窄带滤波器

应用LTCC技术,设计了一款带通滤波器。采用开口环谐振结构作为基本谐振单元,利用谐振级之间的耦合产生传输零点,实现边带抑制。给出了开口环谐振结构的等效电路分析,滤波器的通带中心频率为23.2 GHz,3-dB带宽为600 MHz,具有很窄的相对带宽,3-dB相对带宽仅为2.6%。对滤波器进行仿真和优化,结果表明,通带22.9~23.5 GHz内插损小于3 dB,低阻带10~21.1 GHz的衰减大于45 dB,高阻带25.3~40 GHz的衰减均大于30 dB。该滤波器的尺寸为4 mm×3.5 mm×0.45 mm,具有非常好的窄带特性和边带抑制特性。     

A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique

An active balun with a single-ended input and a pair of differential outputs is presented for the input stages of differential circuits. The active balun, which is composed of an input resonator and cascaded common-gate amplifiers, was implemented using 0.18-mum CMOS technology and bond wire inductors. A body-source cross-coupled configuration was used to enhance the gain of the active balun. The gain is 9.3 dB at 1.8 GHz, and the phase and the amplitude error are less than 2deg and 1 dB, respectively, in the frequency range of 1 to 2 GHz, even for a P_1dB of -2.7 dBm. The balun consumes 9 mA for 3-V supply voltage.     

基于折叠型SIR 谐振器的双通带滤波器设计

文中提出了一种基于折叠型SIR 谐振器的双通带频率可控的微带滤波器,它由SIR 谐振器特性结合 传输线理论实现。该滤波器设计为具有两个自由度,调节谐振器的导带宽度可以对两个通带之间的频率及其间隔 进行调节。文中还研究了调整谐振器导带长度对滤波器频率特性的影响。测试结果表明,该微带滤波器有两个通 带,其中心频率分别为2. 79 GHz 和3. 90 GHz,带内最小插入损耗分别为-0. 96 dB 和-3. 0 dB,带内最小回波损耗分 别为-42 dB 和-18 dB,相对带宽分别为5. 7%和6. 7%。仿真和测试结果的一致性证实了滤波器设计的有效性。     

Silicon micromachined EBG resonator and two-pole filter with improved performance characteristics

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebyshev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 /spl mu/m thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.