等离子体浸没离子注入绝缘材料的研究

等离子体浸没离子注入是一种新形式的离子注入技术,是利用负偏压工件周围形成的等离子体鞘层进行离子加速、进而获得离子注入.等离子体注入的前提条件是工件导电,因此对于绝缘材料的等离子体注入可能存在问题.本文从理论和实际处理的角度论证了绝缘材料等离子体注入的可能性、可操作性,并给出了一些实际例证.     

离子束混合及离子注入陶瓷材料表面改性研究概述

对离子注入陶瓷材料引起的辐照损伤和材料力学性能、摩擦学性能的改善及陶瓷基体上金属薄膜的离子束混合增强粘着研究的进展进行了综述。     

离子注入α—Al2O3陶瓷材料的表面改性研究

研究了α－Ａｌ２Ｏ３单晶注入Ｎ＾＋后的力学性能变化。结果表明，注入剂量为１×１０＾１７Ｎ＾＋／ｃｍ＾２时，Ａｌ２Ｏ３的显微硬度提高了９２％，注入剂量为３×１０＾１７Ｎ＾＋／ｃｍ＾２时，在Ａｌ２Ｏ３表面形成晶层，导致表面软化，显微硬度只是其５０％左右。离子注入在样品表面产生了高达－１１５０ＭＰａ的压应力，材料的断裂韧性的改善与此有关，实验亦发现Ｎ＾＋离子注入后Ａｌ２Ｏ３的断裂韧性提高了９５％左右。     

离子注入技术对生物高分子材料的表面改性

简介了离子注入高分子材料研究领域的概况，重点阐述了利用离子注技术改善生物高分子材料表面生物相容性的研究进展。     

GH903合金的离子注入表面改性研究

用离子注入、氧化和慢正电子束分析研究了ＧＨ９０３合金的氧化性能的改善与微观作用机理。注入的Ｃｒ＋．Ｙ＋的能量均为６０ｋｅＶ，注入的剂量分别由１ｘ１０１７．ｃｍ－２（Ｃｒ＋）、１ｘ１０１５Ｃｍ－２（Ｙ＋）和［１ｘ１０１５．ｃｍ－２（Ｙ＋）＋１ｘ１０１７·ｃｍ－２（Ｃｒ＋）］。结束显示，注入样品与未样品相比。氧化增重分别减少４．８％（注Ｃｒ＋）、２４．２％（注Ｙ＋）和３２．３％（注Ｙ＋＋Ｃｒ＋）。这表明合金氧化性能改善的作用机理主要是注入离子对样品浅表层内缺陷的填充与退火。同时，注入元素的化学性能和使样品表面更致密也起了重要作用。     

低温等离子体改性聚乙烯表面的自由基过程

以电子自旋共振波谱仪(ESR)为主要手段,研究了聚乙烯等五种聚合物等离子体改性过程中表面自由基的生成及转化。等离子体辐照的聚合物首先在表面生成烷基自由基,当与空气接触时,烷基自由基转化成过氧化自由基,在聚合物表面引入极性基因是通过过氧化自由基的反应完成的。     

用于材料表面强化处理的第三代多功能PⅢ装置

第三代多功能等离子体浸没离子注入（PⅢ）装置的强流脉冲阴极弧金属等离子体源既具有强的镀膜功能，同时也具有强的金属离子注入功能；它的脉冲高压电源能输出大的电流；并可获得高的注入剂量均匀性。该装置既能执行离子注入，又能把离子注入与溅射沉积，镀膜结合在一起，形成多种综合笥表面改性工艺。本文描述了它的主要设计原则、主要部件的特性以及近期的研究工作成果。     

Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10¹⁵ ions/cm² was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.     

PIIID技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积（PIII＆D）技术在2Cr13钢表面制备了Ti／DLC纳米多层薄膜,分析了膜层的微观结构和机械特性。实验结果表明：纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高,硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看：纳米多层薄膜保持了类金刚石（DLC）薄膜低摩擦系数的特性,具有良好的承载能力以及膜-基结合特性。     

Influence of the residual oxygen in the plasma immersion ion implantation (PI3) processing of materials

In this work, we investigated the effects of the contaminants present in the vacuum chamber of the PI3 system, in particular, the residual oxygen, which results in the formation of the oxide compounds on the surface and hence is responsible for the high implantation energies required to achieve reasonably thick treated layers. We used a mass spectrometer (RGA) with a quadruple filter to verify the composition of the residual vacuum and pressure of the elements present in the chamber. Initially we found a high proportion of residual oxygen in a vacuum with a pressure of 1 × 10⁻³ Pa. Minimizing the residual oxygen percentage in about 80%, by efficient cleaning of the chamber walls and by improving the gas feeding process, we mitigated the formation of oxides during the PI3 process. Therefore we achieved a highly efficient PI3 processing obtaining implanted layers reaching about 50 nm, even in cases such as an aluminum alloy, where is very difficult to nitrogen implant at low energies. We performed nitrogen PI3 treatment of SS304 and Al7075 using pulses of only 3 kV and 15 × 10⁻⁶ s at 1 kHz with an operating pressure of 1 Pa.     

Development and experimental study of large size composite plasma immersion ion implantation device

Plasma immersion ion implantation(PⅢ) overcomes the direct exposure limit of traditional beamline ion implantation, and is suitable for the treatment of complex work-piece with large size. PⅢ technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PⅢ device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m~3, and maximum vacuum degree is about 5?×?10~(-4) Pa. The density of RF plasma in homogeneous region is about 10~9 cm~(-3), and plasma density in the ion implantation region is about 10~(10) cm~(-3). This device can be used for large-size sample material PⅢ treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.     

全方位离子注入及增强沉积工业机和应用

报道了等离子体源离子注入 (PSII)或等离子体浸没离子注入 (PIII)及增强沉积工业机的实验结果及应用。该机真空室直径 90 0mm ,高 10 5 0mm ,立式放置 ,抽气系统由分子泵及机械泵构成并且实现了PLC控制 ,本底真空小于 4× 10 - 4Pa。等离子体由热阴极放电或三个高效磁过滤式金属等离子体源产生 ,因此可实现全方位离子注入或增强沉积成膜。该机的负高压脉冲最高幅值为 80kV ,最大脉冲电流为 6 0A ,重复频率为 5 0— 5 0 0Hz ,脉冲上升沿小于 2 μs,并且可根据需要产生脉冲串。其等离子体密度约为 10 8— 10 10 ·cm- 3,膜沉积速率为 0 .1— 0 .5nm/s。     

Effect of pulse waveform on plasma sheath expansion in plasma-based ion implantation

In this paper, the effect of the pulse waveform on plasma sheath evolution around a diamond-shaped target has been simulated using fluid dynamic model in the context of plasma-based ion implantation (PBII). The implanted parameters of ions such as ion-implanted energy, impact angle and impact current have also been studied under different pulse shapes. Understandably, the longer pulse rise time would result in the lower ion impact energy, and less sheath expanding extent. By comparing the sheath structure under different pulse rise time, we found that long pulse rise time would enhance the conformation of the sheath to the target at the earlier stage of the pulse and would reduce the tendency of the ion depletion in the plasma sheath. Accordingly increase the ion impact current at the later stage of the pulse, which is quite important for the PBII process, when the ions have been accelerated adequately.     

氮离子注入油菜M1代的生物学效应

研究了氮离子(N+)注入油菜干种子引发的当代生物学效应.结果表明N+在3.2×1016-4.6×1016/cm2注量范围内处理不影响油菜种子发芽;以3.9×1016/cm2注量处理可提高种子出苗率和成苗率;适当注量处理可促进苗期株高、叶片数和单株鲜重的增加,对成株期叶片数、茎粗、最大叶片长和宽等生物性状以及一次有效分枝数、全株总角果数和单株产量等经济性状均具有明显的生长刺激效应.同时,离子束处理区表现出广泛的变异,变异株率达到3.2%.     

重离子注入生物材料质量沉积效应评述

前人曾用重离子束注入生物小分子，借助先进的仪器分析手段，对重离子注入质量沉积进行了初步研究，但质量沉积对处于生命状态下的活生物体组织细胞和生物大分子所带来的生物学效应，即质量沉积效应的研究还未见报道。将来可用放射性重离子束注入活细胞和生物分子，借助放射自显影示踪、放射性测量和分子生物学等研究技术对重离子注入质量沉积效应开展进一步研究。