发挥光纤模块和光连接器潜力提高数字光通信系统品质—安捷伦科技MT—RJ小封装模块的设计、应用指南

目前,MT-RJ光连接器已被广泛应用在100Mb/s快速以太网及千兆位(Gbit)以太网中。MT-RJ连接器采用一个塑料套管,简化了装配难度,也降低了成本,其较小的端口尺寸也相应降低了千兆比特系统的辐射噪声。     

提高数字光通信系统品质

目前,MT-RJ光连接器已被广泛应用在100Mbit/s快速以太网及千兆以太网中.MT-RJ连接器采用一个塑料套管,简化了装配难度,也降低了成本,其较小的端口尺寸也相应降低了千兆比特系统的辐射噪声.     

小封装MT-RJ光连接器及千兆位光纤链路的应用设计

MT—RJ光连接器是安捷伦科技公司推出的100Mb／s快速以太网及千兆位（Gbit）以太网连接器，该器件采用一个塑料套管简化了装配难度，并降低了成本。其较小的端口尺寸也相应降低了千兆比特系统的辐射噪声。MT—RJ小封装光纤模块在数码速率高达1．25GBd的应用中具有宽广的应用领域。在该系列光连接器中，前缀为HFBR的模块适用于多模光纤，前缀为HFCT的模块适用于单模光纤；而后缀为5910E的模块主要用于光纤信道，后缀为5912E的模块则主要应用于千兆以太网。     

发展光纤模块和光连接器提高数字光通信系统品质

目前,MT-RJ光连接器已被广泛应用在100Mb/s快速以太网及千兆位(Gbit)以太网中.MT-RJ连接器采用一个塑料套管,简化了装配难度,也降低了成本,其较小的端口尺寸也相应降低了千兆比特系统的辐射噪声.安捷伦(Agilent)科技公司的MT-RJ小封装光纤模块(HFBR/HFCT 5910/5912在数码速率高达1.25Gb/s的应用中具有宽广的适用领域.本文将重点介绍该系列产品在光纤信道以及千兆以太网的应用.前为HFBR的模块适用于多模光纤,前为HFCT的模块适用于单模光纤;后为5910E的模块用于光纤信道,后为5912E的模块则应用于千兆以太网. 　　……     

HFBR/HFCT-5910/5912光纤模块的特点及原理

目前,ＭＴ－ＲＪ光连接器已被广泛应用在１００Ｍｂ／ｓ快速以太网及千兆位（Ｇｂｉｔ）以太网中。ＭＴ－ＲＪ连接器采用一个塑料套管,简化了装配难度,也降低了成本,其较小的端口尺寸也相应降低了千兆比特系统的辐射噪声。安捷伦（Ａｇｉｌｅｎｔ）科技公司的ＭＴ－ＲＪ小封装光纤模块（ＨＦＢＲ／ＨＦＣＴ－５９１０／５９１２）在数码速率高达１．２５ＧＢｄ的应用中具有宽广的适用领域。本文将重点介绍该系列产品在光纤信道以及千兆以太网的应用。前缀为ＨＦＢＲ的模块适用于多模光纤;前缀为ＨＦＣＴ的模块适用于单模光纤。后缀为５…     

发展光纤模块和光连接器提高数字光通信系统品质

目前,ＭＴ—ＲＪ光连接器已被 广泛应用在 １００Ｍｂ／ｓ快速以太网及千兆位（Ｇｂｉｔ）以太网中。ＭＴ—ＲＪ连接器采用一个塑料套管,简化了装配难度,也降低了成本,其较小的端口尺寸也相应降低了千兆比特系统的辐射噪声。 安捷伦（Ａｇｉｌｅｎｔ）科技公司的ＭＴ—ＲＪ小封装光纤模块（ＨＦＢＲ／ＨＦＣＴ－５９１０／５９１２在数码速率高达１．２５Ｇｂ／ｓ的应用中具有宽广的适用领域。本文将重点介绍该系列产品在光纤信道以及千兆以大网的应用。前为ＨＦＢＲ的模块适用于多模光纤,前为ＨＦＣＴ的模块适用于单模光纤;后为５９…     

千兆位以太网技术

介绍了千兆位以太网出现的背景，阐述了千兆位以太网技术的特点及优势，并提出了千兆位以太网技术的应用方案。     

基于光纤的LED显示屏实时数字视频传输系统的设计

给出了一种应用于LED显示屏远程实时数字视频传输系统的设计方案.将PC端DVI接口输出的视频信号,转换为适合远距离传输的以太网帧格式,在接收端进行帧解码和信号还原,并将接收模块与控制模块集成在一块电路板上,实现了输入端分辨率和刷新率的灵活设置.使用千兆以太网集线器并通过RJ45接口实现了接收控制板的板级级联,免去了数据接收转发的功能模块,减少了设计复杂度.为满足实际远距离传输的需求,打破了千兆以太网5类非屏蔽双绞线最长100 m传输距离的限制,设计了一种以太网光纤转换模块,用单模光纤取代5类非屏蔽双绞线传输信号,最远传输距离达到 10 km.     

千兆位塑料光纤以太示范网络

文章介绍了所组建的全氟树脂塑料光纤千兆以太网的设计方案、设备选择及安装，给出了网络的性能测试数据，分析了全氟树脂塑料光纤及其所构筑的千兆以太网存在的问题，分析了全氟树脂塑料光纤千兆以太网的应用前景，提出了我国应加紧该领域研究的建议。     

连接器适应PCIe和10G以太网逐步上升的数据速率

基于串行互连标准(例如PCle,即PCI Express)的系统,以及连网标准(例如10 G以太网)都必需能处理日益升高数据速率的电缆和连接器.对于这些应用,Amphenol推出了Xcede连接器平台.Xcede面向数据通信、电信、存储和无线设备、它们采用了PCle和千兆以太网,以及同步光纤网络/同步数字系列(SONET/SDH)、光线通道、InfiniBand,以及其它互连方法.这些连接器采用一种高可靠的压配安装,以及减小串扰的3D屏蔽技术.     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.