共查询到20条相似文献,搜索用时 31 毫秒
1.
Pinto J.F. Esterowitz L. Rosenblatt G.H. Kokta M. Peressini D. 《Quantum Electronics, IEEE Journal of》1994,30(11):2612-2616
The continuous-wave (CW) laser performance of Ti:Al2O 3 crystals with high figure of merit is described. Using a 0.1% Ti:Al2O3 crystal (FOM=1000), output powers of 3.5 W at 800 nm are obtained, pumping with a 9.6 W argon ion laser operating multiline. Continuous tunability of the CW Ti:Al2O 3 laser extending from 665 to 1070 nm is also demonstrated for a 5 W pump power 相似文献
2.
Yujin Chen Yanfu Lin Xinghong Gong Zundu Luo Yidong Huang 《Quantum Electronics, IEEE Journal of》2007,43(10):950-956
An Er:Yb:GdAl3(BO3)4 crystal was grown and room-temperature polarized absorption, emission, and gain spectra were investigated. Fluorescence decay curves of Er3+ at 1530 nm and Yb3+ at 1040 nm in the crystal were measured. Efficient laser operation of Er:Yb:GdAl3(BO3)4 crystal at 1.5-1.6 mum was realized. Quasi-continuous-wave output powers of 1.8 W with slope efficiency of 19% and 0.78 W with slope efficiency of 14% were achieved in diode-pumped c-cut and c-cut and a-cut crystals, respectively. The output spectrum and polarization of Er:Yb:GdAl3(BO3)4 laser were also investigated. 相似文献
3.
Ruining Li Changde Xie Junmin Wang Xiaoyan Liang Kunchi Peng Guanfeng Xu 《Quantum Electronics, IEEE Journal of》1993,29(9):2419-2420
A CW Nd:MgO:LiNbO3 self-frequency-doubling laser has been demonstrated at room temperature for the first time. The second-harmonic output at λ=547 nm up to 18 mW was achieved in a simple resonator 相似文献
4.
Data are presented on Al-free InGaAsP-GaAs single quantum well laser diodes operating at 875 nm. Total output powers in excess of 4 W are achieved from a 100 μm broad area gain-guided device. Threshold currents under 200 A/cm2 are reported for diodes operated continuous wave (cw) at room temperature (20°C) 相似文献
5.
Pogorelsky I.V. Fischer J. Kusche K.P. Babzien M. Kurnit N.A. Bigio I.J. Harrison R.F. Shimada T. 《Quantum Electronics, IEEE Journal of》1995,31(3):556-566
A semiconductor switching technique has been utilized to produce 30-300 ps variable duration CO2 laser pulses of 0.5-MW peak power. Eight passes through a 1.2-m long, UV-preionized, 3-atm TE CO2 amplifier raise the output laser peak power to the 1010 W level. Sampling the amplifier gain in linear and saturated regimes using CO2 laser radiation ranging from CW to 30 ps pulse length permits comparison with computer modeling of picosecond CO2 pulse amplification. The potential for further peak power scaling of picosecond molecular lasers is discussed 相似文献
6.
Webjorn J. Siala S. Nam D.W. Waarts R.G. Lang R.J. 《Quantum Electronics, IEEE Journal of》1997,33(10):1673-1686
This paper reviews nonlinear quasi-phase-matching (QPM) waveguides and laser diodes with application to conversion of infrared laser diode wavelengths to the visible. The discussion of nonlinear QPM waveguides includes Ti-diffusion poled and E-field poled LiNbO3 and KTP waveguides. Up to 25 mW of blue output power has been demonstrated for 120-mW infrared power injected into a nonlinear waveguide. Semiconductor laser sources suitable for frequency doubling are discussed, including distributed Bragg reflection (DBR) lasers operating at up to 200 mW output power, master oscillator power amplifiers with over 1 W output power, and wavelength-tunable flared semiconductor lasers with over 0.5 W output. A compact blue laser with 1-4 mW output power at 425-nm wavelength has been demonstrated based on a DBR laser frequency doubled in a nonlinear waveguide 相似文献
7.
A 16 μm CF4 laser oscillator has operated continuous wave in a cooled static cell. Pump powers required from the low-pressure continuous wave CO2 laser were approximately 3 W. The laser cavity was a multiple-pass off-axis-path two-mirror ring resonator. Unidirectional CF4 laser power at 615 cm-1exceeded 2 mW. Rate equations were used to estimate scaling of this laser source. For modest pump powers (40 W) approximately 1 W of emission power is predicted from this small and simple system. 相似文献
8.
An efficient, scalable, diode-pumped Nd laser design is reported. The gain element can be longitudinally pumped along five separate axes and is relatively simple to fabricate. Both Nd:YAG and Nd:YVO4 gain media were evaluated. Using five single-stripe laser diodes to pump the Nd:YAG, 3.94 W of absorbed power produced 2.1 W CW at 1.06 μm. The slope efficiency was 54 percent and the output was TEM00. The threshold power was 40 mW. No evidence of thermal saturation was observed up to the maximum pump power. Repetitively Q-switched operation is also reported. The maximum output power for Nd:YVO4 obtained with 2.9 W of pump power was 1.3 W. The slope efficiency was 47 percent 相似文献
9.
Mateos X. Petrov V. Liu J. Pujol M.C. Griebner U. Aguilo M. Diaz F. Galan M. Viera G. 《Quantum Electronics, IEEE Journal of》2006,42(10):1008-1015
Monoclinic crystals of Tm-doped KLu(WO4)2 were grown with high crystalline quality for several dopant concentrations. The relevant spectroscopic properties for the 3 F4rarr3H6 laser transition (cross sections, lifetime) were measured at room temperature. Laser oscillation in the 2-mum range was obtained both with Ti:sapphire and diode laser pumping near 800 nm using different setups. The maximum output powers achieved were 1.4 and 4 W, respectively, and the corresponding slope efficiencies with respect to the absorbed power were 60% and 69%, respectively. The novel monoclinic double tungstate thulium host KLu(WO4)2 was directly compared to KGd(WO4)2 and exhibited superior performance. The two laser polarization configurations for Tm:KLu(WO4)2 ,E//Nm and E//Np, were also compared under identical conditions with pumping by the polarized Ti:sapphire laser. Tuning was studied for both of them using an intracavity Lyot filter and the tuning range achieved was from 1800 to 1987 nm. In the case of no polarization selective cavity elements the diode-pumped Tm:KLu(WO4 )2 laser naturally selected the E//Nm polarization 相似文献
10.
Wyss C.P. Luthy W. Weber H.P. Vlasov V.I. Zavartsev Y.D. Studenikin P.A. Zagumennyui A.I. Shcherbakov I.A. 《Quantum Electronics, IEEE Journal of》1998,34(12):2380-2382
GdVO4 as a host for thulium has several advantages for diode pumping in comparison with other crystals. The absorption cross section of thulium in GdVO4 is considerably stronger and broader than in YAG and YLF, and the spectrum is shifted closer to the emission wavelength of commercially available AlGaAs laser diodes. In our paper, we report on a diode-pumped monolithic Tm3+(6.9 at.%):GdVO4 microchip laser at 1.9 μm. A maximum output power of 1.4 W is achieved. Two different arrangements for cooling the crystal are discussed. Furthermore, the input-output curves under Ti:sapphire pumping are compared for different pump wavelengths. Slope efficiencies of 58%, clearly exceeding the Stokes limit of 41%, are achieved 相似文献
11.
Junhai Liu Mateos X. Huaijin Zhang Jing Li Jiyang Wang Petrov V. 《Quantum Electronics, IEEE Journal of》2007,43(5):385-390
High-power continuous-wave laser operation near 1 mum was demonstrated at room temperature with c-cut and a-cut Yb:YAl3(BO3)4 crystals end-pumped by a fiber-coupled diode laser. Using a 2-mm-thick c-cut crystal, 10.6 W of output power was generated with an optical-to-optical efficiency of 65% and a slope efficiency of 72%. The complex polarization state of the generated laser radiation was also studied. With a 2-mm-thick a-cut crystal, sigma-polarized laser oscillation was obtained, producing a maximum output power of 8.1 W; the optical-to-optical and slope efficiencies were 56% and 61%, respectively. Complete absorption and emission cross section spectra of the Yb:YAl3(BO3) 4 crystal were also derived, revealing very strong anisotropy of the spectroscopic properties 相似文献
12.
The application of the plasma-injection technique (involving DC-discharge preionization) to a CW CO2 laser operating with recirculated gas is described. Measured characteristics of the discharges, the gain, and the output power are presented. An output of 110 W was obtained with a specific efficiency of 1.0 J/l-1 of flowed gas at a pressure of 10 kPa. A simplified model to calculate a characteristic length of the main discharge, which is useful for design purposes, is developed. This type of laser may be scaled simply to higher output powers, requires a gas mixture with only 20% He, is compact and robust, and yet is simple in its electrical and mechanical requirements 相似文献
13.
Waarts R. Sanders S. Parke R. Mehuys D. Lang R. O'Brien S. Dzurko K. Welch D. Scifres D. 《Photonics Technology Letters, IEEE》1993,5(10):1122-1125
Single-pass frequency doubling of laser diodes extends the wavelength range of infrared laser diodes to blue-green wavelengths. We describe the first experiments of frequency doubling of a coherent, high-power, monolithic master oscillator power amplifier (M-MOPA) laser diode. The output from a l-W M-MOPA is frequency doubled in a single pass through an 8.2-mm-long KNbO3 crystal. We obtained 3.7-mW diffraction-limited output power at a wavelength of 491 nm and modulation at 20 MHz was demonstrated 相似文献
14.
报道了采用真空烧结法结合热等静压技术制备的Nd:Y2O3透明陶瓷的荧光光谱特性及相关激光输出。通过与Nd:YAG透明陶瓷的荧光光谱对比,表明Nd:Y2O3透明陶瓷的4F3/2-4I11/2跃迁光谱存在着多个增益相当的谱线,这更有利于实现同时双波长段激光振荡;不同斯塔克子跃迁光谱的离散特性有利于通过腔镜镀膜控制不同波长损耗,获得丰富的1.0~1.1 μm波段激光。利用简单的平平两镜腔结构完成进一步的实验,通过选择的输出镜片镀膜获得了输出功率3.62 W、转换效率40.4%的1074.6 nm和1078.8 nm的双波长输出和输出功率1.7 W、转换效率19.4%的1130.3 nm波长输出。 相似文献
15.
The possibility of using concentrated Nd laser materials for efficient laser emission and for scaling to high powers is discussed. It is shown that the increased optical absorption in these materials makes direct pumping into the emitting level feasible, with a reduction of the quantum defect between the pump and emission wavelengths, which in turn can enhance the laser emission characteristics and reduce heat generation under pumping. The investigation of the effect of Nd concentration on emission decay of Nd:YAG indicates that up to quite high concentrations, the reduction of the emission quantum efficiency by self-quenching can be compensated by an increase in the pump absorption. Efficient continuous-wave laser emission is demonstrated under direct pumping into the 4F3/2 emitting level of Nd:YAG crystals with up to 3.5-at.% Nd, Nd:YAG ceramics with up to 6.8-at.% Nd, and Nd:YVO4 crystals with up to 3-at.% Nd. Superior performance as compared to traditional pumping into the 4F 5/2 state were obtained. It is inferred that direct pumping into the emitting level of concentrated Nd materials can improve the efficiency of solid-state lasers in the free-generation or low-storage regimes and opens the possibility of scaling these lasers to high powers 相似文献
16.
Bartschke J. Knappe R. Boller K.-J. Wallenstein R. 《Quantum Electronics, IEEE Journal of》1997,33(12):2295-2300
We report on the investigation of efficient self-frequency doubling Nd:YAl3(BO3)4 (Nd:YAB) lasers. Pumped by 1.6 W of 807 nm diode laser radiation, the Nd:YAB laser generates a green 531-nm output of 225 mW which corresponds to a conversion of pump to visible output power of 14%. Conversion efficiencies as high as 20% could be achieved by using the diffraction-limited beam of a Ti:sapphire laser as pump source. In this case, 2.2 W of 807-nm Ti:sapphire radiation produced a 531-nm output of 450 mW. The experimental performance of these Nd:YAB lasers is in good agreement with the predictions of a numerical analysis based on rate equations adequate for lasers with self-frequency doubling 相似文献
17.
Choquette K.D. Hong M. Freund R.S. Mannaerts J.P. Wetzel R.C. Leibenguth R.E. 《Photonics Technology Letters, IEEE》1993,5(3):284-287
The authors report the first buried active region vertical-cavity surface-emitting laser diodes fabricated using in situ dry etching and molecular beam epitaxial regrowth. The laser emissions of the etched/regrown devices persist over a greater current range and exhibit maximum output powers larger than air-post lasers. The lasers are anisotropically etched into the lower monolithic distributed Bragg reflector using an electron cyclotron resonance SiCl4 plasma etch. After transfer in ultra-high vacuum, epitaxial AlGaAs current blocking layers are regrown around the etched mesas. Polycrystalline deposition on the SiO2 mask is removed by reactive ion etching to allow electrical contact and top surface emission. The etched/regrown laser characteristics demonstrate efficient current confinement and low thermal impedance. The vacuum integrated processing described offers the prospect of further device performance enhancements and greater functionality 相似文献
18.
Based on recently published spectroscopic measurements of the relevant energy-transfer parameters, we performed a detailed analysis of the population mechanisms and the characteristics of the output from Er 3+-singly-doped and Er3+, Pr3+-codoped ZBLAN fiber lasers operating at 3 μm, for various Er3+ concentrations and pump powers. Whereas both approaches resulted in similar laser performance at Er3+ concentrations <4 mol.% and pump powers <10 W absorbed, it is theoretically shown here that the Er3+-singly-doped system will be advantageous for higher Er3+ concentrations and pump powers. In this case, energy recycling by energy-transfer upconversion from the lower to the upper laser level can increase the slope efficiency to values greater than the Stokes efficiency, as is associated with a number of Er3+-doped crystal lasers. Output powers at 3 μm on the order of 10 W are predicted 相似文献
19.
横模不稳定效应已经逐渐成为引起高功率光纤激光光束质量急剧恶化并限制其输出功率进一步提升的首要瓶颈问题。基于全光纤化正向泵浦的窄线宽高功率放大平台,对大模场光纤激光器中的横模不稳定效应进行了一系列的探索研究。根据耦合模方程的计算结果,所用大模场光纤25/400 μm中LP01、LP11模之间的非线性耦合强度最大,这也直接诱导了横模不稳定效应的发生。为了抑制LP11模在主放大级的产生和放大,通过弯曲限模这种可操作性强的模式滤波技术,将主放增益光纤的弯曲半径从6 cm缩小至5 cm的过程中,高功率光纤激光系统的横模不稳定阈值从1000 W量级提高到了1600 W量级,而且激光器的其他输出性能几乎没有受到影响。这为构建实际的窄线宽高功率全光纤化的激光系统提供了强有力的实验参照。 相似文献
20.
Hokazono H. Kobayashi N. Obara M. Midorikawa K. Tashiro H. 《Quantum Electronics, IEEE Journal of》1992,28(8):1792-1797
A high-power closed-cycle 1 kHz transversely excited atmospheric (TEA) CO2 laser with an efficient catalytic CO2 regenerator was used to investigate the variations of the average laser output power and the concentrations of the CO2, CO, and O2 molecules in the laser gas mixture with the operational performance of the CO2 regenerator. It was experimentally shown that for the laser gas mixture of CO2-N2-He=15-15-70% and the output coupler reflectivity of 70%, η of 0.1 was required to maintain the laser output power greater than 90% of the initial laser output power of 570 W at an input energy density and a clearing ratio of 150 J/L and 3.0, respectively 相似文献