32位RISC微处理器"龙腾R2"浮点流水线的设计和实现

文章介绍了32位RISC微处理器“龙腾R2”浮点处理单元的体系结构和设计，重点讨论了乱序执行、乱序、结束的高性能浮点流水线设计。为了实现流水线中的精确中断响应，本文采用了一种基于操作数指数和操作类型的浮点异常预测的方法．根据预测结果决定流水线的发射策略。基于0．18μm标准单元综合的结果表明：采用该方法实现的浮点处理流水线．与顺序控制和基于Tomasub算法实现的浮点处理单元相比，整个FPU在付出较少硬件面积的情况下得到了理想的效果．满足功能和时序要求。     

基于IP核的加油机编码器芯片设计

描述了一种基于微处理器IP核的加油机编码器芯片的设计.从扩展微处理器的在线调试功能、Flash接口设计、标准外设接口和中断管理等几个方面,详细讲述了该芯片的设计要点;芯片设计完成后,经过FPGA验证和ASIC实现.该芯片具有功能齐全、便于移植、可灵活配置等优点.     

SPI总线接口的SoPC模块设计与实现

SPI总线接口是Motorola公司提出的一种全双工的同步串行外设通信接口,用于连接微处理器和各种外围设备。可编程片上系统是Altera公司提出的一种灵活、高效的SoC解决方案,SoPC模块间的互联使用了Avalon交换式总线。基于Avalon交换式总线接口规范,利用Verilog HDL硬件描述语言实现SPI总线接口的硬件设计,编写SPI接口模块在NIOSⅡ系统中的驱动程序。在Modelsim中对SPI接口的硬件设计进行功能和时序仿真;在FPGA开发板上构建了实际的NIOSⅡ系统,验证SPI接口的SoPC模块;仿真和验证结果正确,满足设计要求。     

VME总线数据上行中断传输及从设备接口设计

介绍了VME总线数据的传送方式,分析了VME总线中优先中断总线的相关功能模块,研究了VME总线数据中断方式传输的机制,提出了一种基于中断方式数据上行传输的从设备VME接口的设计方法,给出了设计实例。     

基于OpenRISC1200的语音识别SoC设计

介绍了一种基于OpenRISC1200嵌入式微处理器内核的语音识别片上系统(SoC)的设计方法,以及OpenRISC1200内核和WISHBONE片上总线及其特点,最后利用现场可编程门阵列(FPGA)验证了该语音识别SoC设计的可行性.     

高性能HPOR CORDIC算法及实现

CORDIC算法在通信和图像处理等各个领域有着广泛的应用,但是浮点CORDIC由于迭代延时大且实现复杂没有得到很好的应用,本文提出了一种修正浮点CORDIC算法：高精度顺序迭代HPORCORDIC。该算法以接近定点的运算代价完成浮点运算迭代,运算速度和硬件实现规模与定点CORDIC相当,运算精度与浮点CORDIC相当,克服了定点CORDIC运算精度差,浮点CORDIC迭代延时大、实现复杂的问题。该算法既可用于通用微处理器的设计,也可用于高性能DSP的设计。     

基于ECTM总线协议的总线接口单元(BIU)的电路设计

EC^TM是所有执行通写策略的MIPS微处理器内核所采用的接口规范。而BIU(businterface unit)是此次高性能、低功耗32位嵌入式微处理器芯片设计中的一个总线接口模块，它是为了实现高速缓存（cache)与外部存储器（memory)之间的通写策略（writep-through)而设计的一种总线接口单元。本文研究并设计了一种符合EC^TM规范。且满足通写策略的BIU接口电路，并着重阐述了EC^TM规范的功能特点、时序特征及BIU大致的设计方案。     

一种高精度、高指令密集度开放式异常处理方法

根据IEEE754／854标准,微处理器浮点单元的异常类型繁多,产生异常的原因和处理方式也比较复杂。因此浮点单元的设计中经常面临异常难以捕获的问题。本文提出一种高精度、高指令密集度开放式异常处理方法,保证了异常检测的完备性,减少了面积和功耗,加快了指令执行速度。     

高性能16位微处理器IP软核设计

在对标准Intel8086微处理器进行分析的基础上,本文介绍了一种与其指令集兼容、性能大幅提高的可重用16位微处理器IP软核的设计。从处理器体系结构的划分,到指令集的设计以及处理器内部各单元的设计,进行了比较详尽的阐述,并对该设计进行了软件仿真和硬件验证。该处理器采用缩短指令执行时钟周期、增加指令预取队列、改进总线接口时序和减少有效地址计算时间等系统架构的优化,使性能得到大幅度的提高;通过扩展指令集实现与标准8086、8088、80186和80188系列微处理器完全软件兼容。     

微处理器电路引发彩电自动关机故障检修九例

微处理器和总线控制系统，是彩电整机的指挥和控制中心，当微处理器工作条件或外围电路发生故障时，根据程序设计的不同，有的微处理器会进入关机状态，由开关机控制端输出待机控制电压。检修因微处理器和控制系统引发的自动关机故障，首先对微处理器的工作条件、电源电压、复位电路、晶振电路进行检测，对容易发生短路漏电的矩阵电路进行检查，对总线控制电路进行检查，如果总线电压不正常，可采用分割的方法，缩小故障范围。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.