LFMCW雷达数字化测距测速的工作参数设计

LFMCW雷达测距和测速的应用中,测量精度是主要考虑的因素.由于需兼顾距离和速度的测量精度要求,雷达系统参数和信号处理技术指标的设计就变得复杂.从雷达工作原理出发,在数字化信号处理中分析了时域的测距测速精度与频率分辨力的关系,着重讨论了距离分辨力与距离、速度测量精度要求的关系;提出了雷达系统工作参数设计的方法步骤,从而满足较高的测距和测速精度要求.     

超近程雷达高速目标运动补偿方法

针对超近程雷达的高速目标探测问题,提出了一种距离速度解耦合与运动补偿的新方法。通过采用单载频与线性调频连续波(CW+LFMCW)信号组合形式,由CW差拍信号测量目标的无模糊速度,再根据速度估计值对LFMCW差拍信号进行运动补偿得到目标的距离信息,实现了高速目标距离速度解耦合与运动补偿。仿真结果验证了该方法的有效性。     

一种提高LFMCW体制雷达测距精度的方法

为了消除距离-速度耦合现象对LFMCW体制雷达测距模糊及精度的影响,雷达发射信号形式采用对称三角LFMCW信号,利用运动目标在上/下扫频段频谱的对称性仿真验证了单目标环境下去距离-速度耦合的有效性,提高了雷达的测距精度。针对多目标环境下对称三角LFMCW体制雷达上/下扫频段目标配对问题,提出了一种联合MTD通道检测结果与目标距离信息的方法进行上/下扫频段目标的准确配对,从而实现对多目标去距离-速度耦合。仿真结果证明了该方法的有效性。     

汽车防撞毫米波雷达系统参数优化设计

通过分析汽车间相对速度和安全距离的关系,提出线性调频连续波(LFMCW)雷达距离和速度测量指标.根据测量范围及分辨率要求,制定了信号处理指标.分析了雷达前端工作参数与测量指标及信号处理技术参数间的制约关系.通过分析差拍频率和多普勒频率的范围及耦合关系,讨论了前端中心频率和调频频率应满足的关系.通过时频分析研究了测量分辨...     

一种多目标雷达探测系统的设计与实现

针对传统汽车防撞雷达系统中存在的多目标配对问题,基于单发双收射频前端研究了一种线性调频连续波（LFMCW）多目标探测系统。首先理论推导了系统测距测速原理,并在测距测速的基础上增加测角功能;然后根据LFMCW上下扫频中同一目标的角度一致性和峰值能量相近原则对目标进行容差配对,从而实现单周期目标距离速度和角度的准确测量;最后给出多目标雷达探测系统的硬件框图和FPGA信号处理流程,并对该系统进行实测验证。实测结果表明,该系统能够准确地实现目标方位角的测量并有效解决了LFMCW多目标配对问题。     

模糊函数在三角LFMCW信号耦合现象中的应用

模糊函数是用来研究雷达信号好坏的一个重要的函数,根据模糊函数的概念和性质,结合雷达实际信号的模糊图,分析了LFMCW雷达信号距离-速度耦合现象,建立相应的LFMCW雷达的数学模型,研究了其测距和测速原理,对造成信号速度-耦合现象的本质进行了分析,通过仿真完成了多种不同速度情况下雷达信号回波。     

LFMCW雷达运动目标距离与速度超分辨估计

超分辨谱估计算法能得到比传统周期图法高得多的分辨率,针对LFMCW雷达动目标检测问题,本文提出一种基于状态矢量空间方法的LFMCW雷达距离与速度超分辨估计方法。文中介绍了状态矢量空间方法的基本原理并分析了三角LFMCW雷达上、下扫频段差频信号的特点,使用基于状态矢量空间方法估计差频信号频谱,同时给出了相应的运动目标距离与速度的估计算法。该算法解决了LFMCW雷达动目标去耦问题,与传统FFT方法相比提高了运动目标距离与速度的分辨率和估计精度。仿真结果证明了该算法的有效性。      

线性调频连续波雷达目标参数测量

为实现线性调频连续波雷达对道路上不同车道不同目标的监测,需通过实验分析雷达对目标参数(距离、 速度及角度)的测量精度,而测量精度与目标实际参数的准确标定直接相关.针对上述3个参数的特点,采用金属平板分析距离测量误差;设计了目标角度测量及校正系统,并利用角反射器分析角度测量误差;利用速度恒定的玩具汽车分析速度测量误差.实...     

线性调频连续波雷达扫频功率起伏对其测距精度和距离分辨力的影响

实际的线性调频连续波(LFMCW)雷达的发射信号都有两个非理想的参数扫频非线性和功率起伏,它们将使LFMCW雷达的实际测距精度和距离分辨力下降。本文根据LFMCW雷达回波功率谱的特性,从应用的角度分析了扫频功率起伏与其测距精度和距离分辨力的关系,为LFMCW雷达振荡器的选择提供一个理论依据。     

LFMCW雷达运动目标高精度检测方法

LFMCW雷达检测运动目标，可以采用对称三角LFMCW信号，通过频域配对实现动目标距离、速度的去耦合。但是在实现时，如果只采用传统的FFT作为核心算法就会引起较大的测距、测速误差。本文采用FFT-CZT两级处理方法，从而在运算量增加不多的情况下，显著提高LFMCW雷达的动目标测距、测速精度。仿真结果表明，本方法适用于各种带宽的LFMCW雷达，具有通用性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.