高动态低信噪比下扩频信号捕获算法研究

分析了高动态对扩频信号捕获的影响因素,针对低信噪比、高动态的双重条件对捕获时间的严格要求,提出了一种基于二次捕获的高动态低信噪比下扩频信号快速捕获方法,能够缩短捕获时间,快速进行扩频伪码相位、载波多普勒频率以及载波多普勒频率变化率的捕获.     

高动态扩频信号的载波跟踪技术研究

针对高动态环境下扩频信号的载波捕获与跟踪问题,本文分析了多普勒频移对锁相环、锁频环以及环路滤波器设计的影响,以及高动态环境中载波快速捕获问题,在此基础上提出了一种数字复合软环的设计方法,计算机仿真结果表明这种数字复合软环能有效地解决载波快捕与精跟踪的问题.     

扩频信号的捕获与跟踪

针对直接序列扩频信号,介绍了其发射和接收部分基本组成,给出了系统接收部分的具体设计框图。重点讨论了对扩频信号的捕获与跟踪的方法,其中包括扩频码的捕获与跟踪以及载波的捕获与跟踪。对各模块的性能进行了分析,提出了在高速信号处理板(以FPGA和DSP为基础)中对扩频信号的捕获与跟踪的实现方案。经工程验证,能够实现伪码同步和载波同步,解调出所需信号。     

高动态扩频信号的载波跟踪技术研究

针对高动态环境下扩频信号的载波捕获与跟踪问题，本文分析了多普勒频移对锁相环、锁频环以及环路滤波器设计的影响，以及高动态环境中载波快速捕获问题，在此基础上提出了一种数字复合软环的设计方法，计算机仿真结果表明这种数字复合软环能有效地解决载波快捕与精跟踪的问题．     

基于SOPC实现扩频信号的捕获与跟踪

扩频信号的捕获与跟踪是扩频接收机进行定位解算的基础,提出了利用FPGA内的嵌入式软核Niosll在单片FPGA内实现扩频信号捕获与跟踪的设计方案.详细分析了该方案的匹配滤波器、相关器、载波跟踪环和码跟踪环设计和实现方法.给出了根据该设计对实时的GPS信号的捕获跟踪测试结果.结果表明,该设计能够实现对扩频信号的实时捕获与跟踪,相比利用FPGA+DSP方案实现扩频信号的捕获与跟踪,具有可重构性好,硬件开发难度低,接收机体积小等优点.     

扩频通信中PN码序列的捕获

扩频信号的捕获与跟踪是扩频接收机进行定位解扩的基础,文中基于FPGA进行了扩频信号捕获与跟踪的设计实现。分析了该方案的匹配滤波器、载波跟踪环、码跟踪环的设计与实现方法。并通过BPSK调制,使用非相干扩频通信的PN码并行捕获算法实现信号的捕获。     

基于基带信号包络的数字AGC设计与实现

在卫星扩频通信系统中,通常采用自动增益控制(Automatic Gain Control,AGC)技术解决大动态的信号起伏和干扰,以实现扩频信号的快速捕获和跟踪.分析了扩频接收机基带信号数字采样门限,通过用信号包络功率值作为AGC控制信号,实现了接收基带信号大动态范围的信号处理,完成了数字AGC自适应控制.利用扩频信号进行完全捕获后的包络信号作为AGE信号可以有效防止信号捕获过程中多普勒频移等引起的失锁和误捕,实现扩频接收机RF(射频)信号大动态范围的信号控制.     

DS/FH扩频测控信号的一种同步方案分析

针对航天测控信号的高动态特点,提出了直扩/跳频混合扩频(DS/FH)测控信号的一种快速同步方案.阐述了采用频率快速扫描和基于FFT算法的三维快捕方法.通过对码多普勒及多普勒频移跳变现象的分析,得到了利用跳频图案和多普勒频移的跟踪结果来实时补偿最大为8.2 kHz的多普勒跳变量的方法.在比较了几种载波跟踪方法的基础上,给出了采用算法嵌入式环路跟踪测控信号的建议.     

直扩导航系统中数字科思塔斯环的FPGA设计与实现

引言 扩频接收机载波的同步包括捕获和跟踪两个过程,载波捕获即多普勒频移的粗略估计通常包含在伪码同步过程中,而精确的载波相位及多普勒频移则通过FLL（锁频环）和PLL（锁相环）跟踪来实现。锁频环直接跟踪载波频率,而锁相环则直接对载波相位进行跟踪。锁相环具有较高的跟踪精度,但对通信链路干扰的容忍能力差,特别是受载体动态引入的多普勒频移影响较大;而锁频环具有较好的动态性能,但跟踪精度较低。     

中频数字化扩频测距系统的实现

给出了统一扩频、统一信道模式的中频数字化扩频测距系统的实现方案。该系统的载波与伪随机码的捕获采用了FFT辅助捕获技术,载波的跟踪采用了数字CPAFC环路牵引、数字COSTAS环路精确跟踪技术,可以有效克服多普勒频移对系统性能的影响。GOLD码跟踪采用的是数字DLL环路,利用该扩频码与截断m序列之间具有的同速率、倍周期的关系,在GOLD码同步后引导截断m序列快速同步。讨论了实现1ns恒分辨率、误差为0.01chip的测距方法与测量数据的"置中值"链接方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.